JP2012124374A5 - - Google Patents
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- Publication number
- JP2012124374A5 JP2012124374A5 JP2010274816A JP2010274816A JP2012124374A5 JP 2012124374 A5 JP2012124374 A5 JP 2012124374A5 JP 2010274816 A JP2010274816 A JP 2010274816A JP 2010274816 A JP2010274816 A JP 2010274816A JP 2012124374 A5 JP2012124374 A5 JP 2012124374A5
- Authority
- JP
- Japan
- Prior art keywords
- rare earth
- layer
- oxide film
- earth oxide
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000002500 ions Chemical class 0.000 description 9
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010416 ion conductor Substances 0.000 description 5
- 239000011669 selenium Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000010944 silver (metal) Substances 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 229910052711 selenium Inorganic materials 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910010282 TiON Inorganic materials 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- 229910006252 ZrON Inorganic materials 0.000 description 1
- 229910003134 ZrOx Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- OCVXZQOKBHXGRU-UHFFFAOYSA-N iodine(1+) Chemical compound [I+] OCVXZQOKBHXGRU-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010274816A JP5728919B2 (ja) | 2010-12-09 | 2010-12-09 | 記憶素子および記憶装置 |
| CN201110391057.5A CN102544364B (zh) | 2010-12-09 | 2011-11-30 | 存储元件和存储装置 |
| US13/309,151 US8809826B2 (en) | 2010-12-09 | 2011-12-01 | Memory element and memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010274816A JP5728919B2 (ja) | 2010-12-09 | 2010-12-09 | 記憶素子および記憶装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012124374A JP2012124374A (ja) | 2012-06-28 |
| JP2012124374A5 true JP2012124374A5 (cg-RX-API-DMAC7.html) | 2014-01-16 |
| JP5728919B2 JP5728919B2 (ja) | 2015-06-03 |
Family
ID=46199252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010274816A Expired - Fee Related JP5728919B2 (ja) | 2010-12-09 | 2010-12-09 | 記憶素子および記憶装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8809826B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP5728919B2 (cg-RX-API-DMAC7.html) |
| CN (1) | CN102544364B (cg-RX-API-DMAC7.html) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6162931B2 (ja) * | 2012-06-19 | 2017-07-12 | ソニーセミコンダクタソリューションズ株式会社 | 記憶素子および記憶装置 |
| US20140264224A1 (en) * | 2013-03-14 | 2014-09-18 | Intermolecular, Inc. | Performance Enhancement of Forming-Free ReRAM Devices Using 3D Nanoparticles |
| US10002664B2 (en) * | 2013-09-18 | 2018-06-19 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Non-volatile resistive memory cell comprising metal electrodes and a solid electrolyte between the metal electrodes |
| KR102297252B1 (ko) * | 2014-01-17 | 2021-09-03 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 스위치 소자 및 기억 장치 |
| KR101521383B1 (ko) * | 2014-03-12 | 2015-05-19 | 한양대학교 산학협력단 | 비휘발성 저항 스위칭 메모리 소자 |
| CN105789207A (zh) * | 2014-12-22 | 2016-07-20 | 旺宏电子股份有限公司 | 具有含氧控制层的存储装置及其制造方法 |
| CN107431070B (zh) * | 2015-03-31 | 2022-03-01 | 索尼半导体解决方案公司 | 开关器件和存储装置 |
| JP6433860B2 (ja) | 2015-08-06 | 2018-12-05 | 東芝メモリ株式会社 | 記憶装置 |
| US11106966B2 (en) * | 2017-03-13 | 2021-08-31 | International Business Machines Corporation | Battery-based neural network weights |
| US10734576B2 (en) * | 2018-03-16 | 2020-08-04 | 4D-S, Ltd. | Resistive memory device having ohmic contacts |
| US10833262B2 (en) | 2018-03-16 | 2020-11-10 | 4D-S, Ltd. | Resistive memory device having a conductive barrier layer |
| US11437573B2 (en) * | 2018-03-29 | 2022-09-06 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device and method for manufacturing the same |
| US11476416B2 (en) | 2018-03-29 | 2022-10-18 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device and method for manufacturing the same |
| CN115267335B (zh) * | 2022-08-01 | 2025-10-28 | 长鑫存储技术有限公司 | 位线接触节点电阻的测量方法及设备 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010110433A (ko) | 1999-02-11 | 2001-12-13 | 알란 엠. 포스칸져 | 프로그래머블 마이크로일렉트로닉 장치 및 그 형성방법과프로그래밍 방법 |
| JP4792714B2 (ja) | 2003-11-28 | 2011-10-12 | ソニー株式会社 | 記憶素子及び記憶装置 |
| JP4848633B2 (ja) * | 2004-12-14 | 2011-12-28 | ソニー株式会社 | 記憶素子及び記憶装置 |
| JP2007026492A (ja) * | 2005-07-13 | 2007-02-01 | Sony Corp | 記憶装置及び半導体装置 |
| WO2008132899A1 (ja) * | 2007-04-17 | 2008-11-06 | Nec Corporation | 抵抗変化素子及び該抵抗変化素子を含む半導体装置 |
| JP5088036B2 (ja) * | 2007-08-06 | 2012-12-05 | ソニー株式会社 | 記憶素子および記憶装置 |
| JP2009043873A (ja) * | 2007-08-08 | 2009-02-26 | Sony Corp | 記憶素子および記憶装置 |
| JP2010177393A (ja) * | 2009-01-29 | 2010-08-12 | Sony Corp | 半導体記憶装置およびその製造方法 |
| US8415650B2 (en) * | 2009-07-02 | 2013-04-09 | Actel Corporation | Front to back resistive random access memory cells |
| US8134139B2 (en) * | 2010-01-25 | 2012-03-13 | Macronix International Co., Ltd. | Programmable metallization cell with ion buffer layer |
-
2010
- 2010-12-09 JP JP2010274816A patent/JP5728919B2/ja not_active Expired - Fee Related
-
2011
- 2011-11-30 CN CN201110391057.5A patent/CN102544364B/zh not_active Expired - Fee Related
- 2011-12-01 US US13/309,151 patent/US8809826B2/en not_active Expired - Fee Related
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