JP2012093748A - 有機発光ディスプレイ装置及びその製造方法 - Google Patents
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- 238000007715 excimer laser crystallization Methods 0.000 description 2
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- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
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- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
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- 239000010937 tungsten Substances 0.000 description 2
- YOZHUJDVYMRYDM-UHFFFAOYSA-N 4-(4-anilinophenyl)-3-naphthalen-1-yl-n-phenylaniline Chemical compound C=1C=C(C=2C(=CC(NC=3C=CC=CC=3)=CC=2)C=2C3=CC=CC=C3C=CC=2)C=CC=1NC1=CC=CC=C1 YOZHUJDVYMRYDM-UHFFFAOYSA-N 0.000 description 1
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- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】基板上に配置され、屈折率の異なる複数の絶縁膜を含み、前記複数の絶縁膜のうち少なくとも一つは同一面上で異なる厚さで形成されたバッファ層と、前記バッファ層の厚い領域に形成された薄膜トランジスタの活性層と、前記バッファ層の薄い領域に形成された画素電極と、ゲート絶縁膜を介して前記活性層上に形成された前記薄膜トランジスタのゲート電極と、前記活性層に接続された前記薄膜トランジスタのソース及びドレイン電極と、前記画素電極上に形成された発光層と、前記発光層を介して、前記画素電極に対向配置される対向電極と、を備える有機発光ディスプレイ装置。
【選択図】図9
Description
第1画素電極114、第1ゲート電極214及びキャパシタの第1上部電極314は同じ透明導電物で形成される。透明導電物としては、酸化インジウムスズ(indium tin oxide:ITO)、酸化インジウム亜鉛(indium zinc oxide:IZO)、酸化亜鉛(zinc oxide:ZnO)、酸化インジウム(indium oxide:In2O3)、酸化インジウムガリウム(indium galium oxide:IGO)、及び酸化アルミニウム亜鉛(aluminium zinc oxide:AZO)を含むグループから選択された少なくとも一つ以上を含むことができる。
前記開口C4は発光領域を定義する役割以外に、第1画素電極114のエッジと対向電極119(図9参照)との間隔を広げて、第1画素電極114のエッジに電界が集中する現象を防止することで、第1画素電極114と対向電極119との短絡を防止する役割を行う。
10 基板
11 バッファ層
12 半導体層
13 ゲート絶縁膜
16 層間絶縁膜
114 第1画素電極
115 第2画素電極
118 発光層
119 対向電極
212 活性層
214 第1ゲート電極
215 第2ゲート電極
217a、217b ソース/ドレイン電極
312 下部電極
314 第1上部電極
315 第2上部電極
PXL 画素領域
TFT トランジスタ領域
CAP キャパシタ領域
Claims (25)
- 基板上に配置され、屈折率の異なる複数の絶縁膜を含み、前記複数の絶縁膜のうち少なくとも一つは同一面上で異なる厚さで形成されたバッファ層と、
前記バッファ層の厚い領域に形成された薄膜トランジスタの活性層と、
前記バッファ層の薄い領域に形成された画素電極と、
ゲート絶縁膜を介して前記活性層上に形成された前記薄膜トランジスタのゲート電極と、
前記活性層に接続された前記薄膜トランジスタのソース及びドレイン電極と、
前記画素電極上に形成された発光層と、
前記発光層を介して、前記画素電極に対向配置される対向電極と、
を備える、有機発光ディスプレイ装置。 - 前記複数の絶縁膜のうち異なる厚さで形成された膜は、前記バッファ層に含まれる前記複数の絶縁膜のうちの最上層膜である、請求項1に記載の有機発光ディスプレイ装置。
- 前記バッファ層の最上層膜は、前記最上層下部膜より水素含有量が小さい、請求項2に記載の有機発光ディスプレイ装置。
- 前記活性層は多結晶シリコンを含み、
前記バッファ層の最上層下部膜は、前記多結晶シリコンの欠陥サイトに充填されて前記欠陥を治す、請求項3に記載の有機発光ディスプレイ装置。 - 前記バッファ層の最上層膜、及び前記最上層下部膜は、それぞれ酸化シリコン及び窒化シリコンである、請求項3に記載の有機発光ディスプレイ装置。
- 前記バッファ層の厚い領域の端部と前記活性層のエッチング面の端部との形状が同一である、請求項1に記載の有機発光ディスプレイ装置。
- 前記複数の絶縁膜は、互いに隣接した膜の屈折率が異なる、請求項1に記載の有機発光ディスプレイ装置。
- 前記ゲート絶縁膜は、屈折率の異なる複数の膜を含む、請求項1に記載の有機発光ディスプレイ装置。
- 前記ゲート絶縁膜の複数の膜のうち前記活性層に接触する膜は、前記活性層に接触しない他の膜より水素含有量が小さい、請求項8に記載の有機発光ディスプレイ装置。
- 前記活性層は多結晶シリコンを含み、
前記活性層に接触しない膜は、前記多結晶シリコンの欠陥サイトに充填されて前記欠陥を治す、請求項8に記載の有機発光ディスプレイ装置。 - 前記ゲート絶縁膜の複数の膜のうち前記活性層に接触する膜及び前記活性層に接触しない膜は、それぞれ酸化シリコン及び窒化シリコンである、請求項8に記載の有機発光ディスプレイ装置。
- 前記画素電極は透明電極であり、前記対向電極は反射電極である、請求項1に記載の有機発光ディスプレイ装置。
- 前記活性層と同一層に形成され、かつ前記バッファ層の厚い領域に形成されたキャパシタの下部電極と、前記ゲート電極と同一層に形成されたキャパシタの上部電極と、をさらに備える、請求項1に記載の有機発光ディスプレイ装置。
- 前記下部電極の端部と前記バッファ層の厚い領域の端部とのエッチング面の形状が同一である、請求項13に記載の有機発光ディスプレイ装置。
- 前記下部電極は多結晶シリコンを含み、前記ゲート絶縁膜の複数の膜のうち前記下部電極に接触する膜は、前記下部電極に接触しない他の膜より水素含有量が小さい、請求項13に記載の有機発光ディスプレイ装置。
- 前記下部電極に接触する膜及び前記下部電極に接触しない膜は、それぞれ酸化シリコン及び窒化シリコンである、請求項15に記載の有機発光ディスプレイ装置。
- 基板上に屈折率の異なる複数の絶縁膜を含むバッファ層を形成し、
前記バッファ層上に半導体層を形成した後、前記半導体層をパターニングして活性層を形成し、前記活性層が形成される領域のバッファ層の厚さを、前記活性層が形成されていない領域の厚さより厚く形成し、
前記活性層を覆うようにゲート絶縁膜を形成し、前記ゲート絶縁膜上の前記バッファ層の薄い領域に画素電極を形成し、前記ゲート絶縁膜を介して前記活性層上にゲート電極を形成し、
層間絶縁膜を形成し、前記層間絶縁膜に前記活性層及び画素電極の一部が露出されるように開口を形成し、
前記活性層に接続するソース電極及びドレイン電極を形成し、
前記ソース電極及びドレイン電極を覆って、前記画素電極を露出させる開口を持つ画素定義膜を形成する有機発光ディスプレイ装置の製造方法。 - 前記基板上に屈折率の異なる複数の絶縁膜を含むバッファ層を形成する時、前記バッファ層に含まれる前記複数の絶縁膜のうちの最上層の膜を他の膜よりさらに厚く形成する、請求項17に記載の有機発光ディスプレイ装置の製造方法。
- 前記バッファ層の最上層膜を厚さが同一面上で異なるように形成する、請求項18に記載の有機発光ディスプレイ装置の製造方法。
- 前記活性層を遮蔽マスクとして利用して、前記バッファ層の厚さが異なるようにエッチングする、請求項19に記載の有機発光ディスプレイ装置の製造方法。
- 前記活性層の形成時、非晶質シリコンを結晶化する工程が共に伴われる、請求項17に記載の有機発光ディスプレイ装置の製造方法。
- 前記ゲート絶縁膜は、屈折率の異なる複数の膜で形成される、請求項17に記載の有機発光ディスプレイ装置の製造方法。
- 前記活性層と同一層に前記活性層と同一物質を含むキャパシタ下部電極を同時に形成し、前記ゲート電極と同一層に前記ゲート電極と同一物質を含むキャパシタ上部電極を形成する、請求項17に記載の有機発光ディスプレイ装置の製造方法。
- 前記下部電極を遮蔽マスクとして利用して、前記バッファ層の厚さが異なるようにエッチングする、請求項23に記載の有機発光ディスプレイ装置の製造方法。
- 前記ソース電極及びドレイン電極の形成時、前記上部電極の一部を除去して前記下部電極にイオン不純物をドーピングする、請求項23に記載の有機発光ディスプレイ装置の製造方法。
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