JP2012089814A - 表示装置及びその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 239000004065 semiconductor Substances 0.000 claims abstract description 122
- 239000003990 capacitor Substances 0.000 claims abstract description 79
- 238000005530 etching Methods 0.000 claims abstract description 56
- 230000002265 prevention Effects 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 52
- 238000001259 photo etching Methods 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 105
- 239000010408 film Substances 0.000 description 88
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000010409 thin film Substances 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 230000003449 preventive effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NPNMHHNXCILFEF-UHFFFAOYSA-N [F].[Sn]=O Chemical compound [F].[Sn]=O NPNMHHNXCILFEF-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 239000011368 organic material Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】基板111と、基板上に形成されたゲート電極133及び第1キャパシタ電極138を含むゲート配線と、ゲート配線上に形成されたゲート絶縁膜140と、ゲート絶縁膜上に形成され、ゲート電極と少なくとも一部が重なるアクティブ領域153と、第1キャパシタ電極と少なくとも一部が重なるキャパシタ領域158とを含む半導体層パターンと、半導体層パターンのアクティブ領域の一部上に形成されたエッチング防止膜165と、エッチング防止膜の上から半導体層のアクティブ領域の上にわたって形成され、エッチング防止膜を介在して互いに離隔したソース電極175及びドレイン電極177と、半導体層のキャパシタ領域の上に形成された第2キャパシタ電極178とを含むデータ配線と、を含む。
【選択図】 図3
Description
80 キャパシタ、
101、102 表示装置、
111 基板、
131 ゲートライン、
132 キャパシタライン、
133 ゲート電極、
138 第1キャパシタ電極、
139 第1接続ライン、
140 ゲート絶縁膜、
153 アクティブ領域、
158 キャパシタ領域、
159 接続領域、
165 エッチング防止膜、
171 データライン、
175 ソース電極、
177 ドレイン電極、
178 第2キャパシタ電極、
179 第2接続ライン、
180 層間絶縁膜、
649 接続コンタクトホール、
807 ドレインコンタクトホール、
808 キャパシタコンタクトホール、
849 第1接続コンタクトホール、
808 第2接続コンタクトホール。
Claims (29)
- 基板と、
前記基板上に形成されたゲート電極及び第1キャパシタ電極を含むゲート配線と、
前記ゲート配線上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成され、前記ゲート電極と少なくとも一部が重なるアクティブ領域と、前記第1キャパシタ電極と少なくとも一部が重なるキャパシタ領域とを含む半導体層パターンと、
前記半導体層パターンの前記アクティブ領域の一部上に形成されたエッチング防止膜と、
前記エッチング防止膜の上から前記半導体層の前記アクティブ領域の上にわたって形成され、前記エッチング防止膜を介在して互いに離隔したソース電極及びドレイン電極と、前記半導体層の前記キャパシタ領域の上に形成された第2キャパシタ電極とを含むデータ配線と、
を含むことを特徴とする表示装置。 - 前記半導体層パターンと前記データ配線は、前記エッチング防止膜と重なる部分を除いて互いに同一のパターンに形成されたことを特徴とする請求項1に記載の表示装置。
- 前記エッチング防止膜は、前記半導体層パターン及び前記データ配線のうちの一つ以上と互いに異なるエッチング選択比を有することを特徴とする請求項1または2に記載の表示装置。
- 前記ゲート配線は第1接続ラインをさらに含み、
前記データ配線は前記第1接続ラインと少なくとも一部が重なる第2接続ラインをさらに含み、
前記半導体層パターンは前記第2接続ラインの下に配置された接続領域をさらに含むことを特徴とする請求項2〜4のいずれか一項に記載の表示装置。 - 前記第1接続ラインと前記第2接続ラインとの間で、前記ゲート絶縁膜と前記半導体層パターンの前記接続領域を共に貫く接続コンタクトホールをさらに含み、
前記接続コンタクトホールを通じて前記第1接続ラインと前記第2接続ラインが互いに接触することを特徴とする請求項4に記載の表示装置。 - 前記データ配線の前記第2接続ラインと前記半導体層パターンの前記接続領域は、前記接続コンタクトホールを除いて互いに同一のパターンに形成されることを特徴とする請求項5に記載の表示装置。
- 前記データ配線の前記第2接続ラインと前記半導体層パターンの前記接続領域は、互いに同一のパターンに形成されたことを特徴とする請求項4に記載の表示装置。
- 前記データ配線の上に形成された平坦化膜をさらに含み、
前記平坦化膜を貫いて前記ドレイン電極の一部を露出するドレインコンタクトホールと、前記平坦化膜を貫いて前記第2キャパシタ電極の一部を露出するキャパシタコンタクトホールとをさらに含むことを特徴とする請求項1〜7のいずれか一項に記載の表示装置。 - 前記ドレインコンタクトホール及び前記キャパシタコンタクトホールを通じて前記ドレイン電極及び前記第2キャパシタ電極とそれぞれ接触した画素電極をさらに含むことを特徴とする請求項8に記載の表示装置。
- 前記平坦化膜及び前記ゲート絶縁膜を貫いて前記第1接続ラインの一部を露出する第1接続コンタクトホールと、前記平坦化膜を貫いて第2接続ラインの一部を露出する第2接続コンタクトホールとを含むことを特徴とする請求項8または9に記載の表示装置。
- 前記平坦化膜上に形成され、前記第1接続コンタクトホールと前記第2接続コンタクトホールを通じて前記第1接続ラインと前記第2接続ラインを互いに接続する接続部材をさらに含むことを特徴とする請求項10に記載の表示装置。
- 前記半導体層パターンは酸化物半導体で形成されたことを特徴とする請求項1〜11のいずれか一項に記載の表示装置。
- 前記半導体層は、ガリウム(Ga)、インジウム(In)、亜鉛(Zn)、ハフニウム(Hf)、及び錫(Sn)のうちの一つ以上の元素と酸素(O)を含むことを特徴とする請求項12に記載の表示装置。
- 基板を用意する段階と、
前記基板上にゲート電極及び第1キャパシタ電極を含むゲート配線を形成する段階と、
前記ゲート配線上にゲート絶縁膜を形成する段階と、
前記ゲート絶縁膜上に半導体層を形成する段階と、
前記半導体層上に前記ゲート電極の一部と重なるようにエッチング防止膜を形成する段階と、
前記エッチング防止膜の上から前記半導体層の上にわたってデータ金属層を形成する段階と、
前記データ金属層及び前記半導体層を共にパターニングして、ソース電極、ドレイン電極、及び第2キャパシタ電極を含むデータ配線と、アクティブ領域及びキャパシタ領域を含む半導体層パターンを形成する段階と、
を含むことを特徴とする表示装置の製造方法。 - 前記半導体層パターンの前記アクティブ領域は前記ゲート電極と少なくとも一部が重なり、
前記ソース電極と前記ドレイン電極は前記エッチング防止膜の上から前記半導体層の前記アクティブ領域の上にわたって形成され、
前記ソース電極と前記ドレイン電極は前記エッチング防止膜を介在して互いに離隔することを特徴とする請求項14に記載の表示装置の製造方法。 - 前記半導体層パターンと前記データ配線は、前記エッチング防止膜と重なる部分を除いて互いに同一のパターンに形成されることを特徴とする請求項15に記載の表示装置の製造方法。
- 前記エッチング防止膜は、前記半導体層パターン及び前記データ配線のうちの一つ以上と互いに異なるエッチング選択比を有することを特徴とする請求項15または16に記載の表示装置の製造方法。
- 前記データ配線と前記半導体層パターンは、一つのマスクを利用したフォトエッチング工程によって共に形成されることを特徴とする請求項17に記載の表示装置の製造方法。
- 前記ゲート配線は第1接続ラインをさらに含み、
前記データ配線は前記第1接続ラインと少なくとも一部が重なる第2接続ラインをさらに含み、
前記半導体層パターンは前記第2接続ラインの下に配置される接続領域をさらに含むことを特徴とする請求項17または18に記載の表示装置の製造方法。 - 前記データ金属層を形成する前に、前記半導体層と前記ゲート絶縁膜を共に貫いて、前記第1接続ラインの一部を露出する接続コンタクトホールを形成する段階をさらに含むことを特徴とする請求項19に記載の表示装置の製造方法。
- 前記第2接続ラインは、前記接続コンタクトホールを通じて前記第1接続ラインと接触することを特徴とする請求項20に記載の表示装置の製造方法。
- 前記データ配線の前記第2接続ラインと前記半導体層パターンの前記接続領域は、前記接続コンタクトホールを除いて互いに同一のパターンに形成されることを特徴とする請求項20または21に記載の表示装置の製造方法。
- 前記データ配線の前記第2接続ラインと前記半導体層パターンの前記接続領域は、互いに同一のパターンに形成されることを特徴とする請求項19に記載の表示装置の製造方法。
- 前記データ配線の上に形成される平坦化膜を形成する段階と、
前記平坦化膜を貫いて前記ドレイン電極の一部を露出するドレインコンタクトホールと、前記第2キャパシタ電極の一部を露出するキャパシタコンタクトホールとを形成する段階と、
をさらに含むことを特徴とする請求項14〜23に記載の表示装置の製造方法。 - 前記平坦化膜上に画素電極を形成する段階をさらに含み、
前記画素電極は、前記ドレインコンタクトホール及び前記キャパシタコンタクトホールを通じて前記ドレイン電極及び前記第2キャパシタ電極とそれぞれ接触することを特徴とする請求項24に記載の表示装置の製造方法。 - 前記ドレインコンタクトホール及び前記キャパシタコンタクトホールを形成する時、前記平坦化膜及び前記ゲート絶縁膜を貫いて前記第1接続ラインの一部を露出する第1接続コンタクトホールと、前記平坦化膜を貫いて第2接続ラインの一部を露出する第2接続コンタクトホールとを共に形成することを特徴とする請求項24または25に記載の表示装置の製造方法。
- 前記画素電極を形成する時、前記平坦化膜上に前記第1接続コンタクトホールと前記第2接続コンタクトホールを通じて前記第1接続ラインと前記第2接続ラインを互いに接続する接続部材と共に形成することを特徴とする請求項26に記載の表示装置の製造方法。
- 前記半導体層パターンは酸化物半導体で形成されることを特徴とする請求項14〜27のいずれか一項に記載の表示装置の製造方法。
- 前記半導体層は、ガリウム(Ga)、インジウム(In)、亜鉛(Zn)、ハフニウム(Hf)、及び錫(Sn)のうちの一つ以上の元素と酸素(O)を含むことを特徴とする請求項28に記載の表示装置の製造方法。
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