CN103792744A - 存储电容、像素单元及存储电容的制造方法 - Google Patents

存储电容、像素单元及存储电容的制造方法 Download PDF

Info

Publication number
CN103792744A
CN103792744A CN201410033377.7A CN201410033377A CN103792744A CN 103792744 A CN103792744 A CN 103792744A CN 201410033377 A CN201410033377 A CN 201410033377A CN 103792744 A CN103792744 A CN 103792744A
Authority
CN
China
Prior art keywords
electrode
insulation course
layer
metal level
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410033377.7A
Other languages
English (en)
Inventor
姚晓慧
许哲豪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to CN201410033377.7A priority Critical patent/CN103792744A/zh
Publication of CN103792744A publication Critical patent/CN103792744A/zh
Priority to PCT/CN2015/071294 priority patent/WO2015110028A1/zh
Priority to US14/782,188 priority patent/US20170192323A1/en
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133302—Rigid substrates, e.g. inorganic substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

本发明实施例公开了一种存储电容，包括基底，位于该基底上且由第一金属层形成的第一电极，形成在该基底及该第一电极上的第一绝缘层，形成在该第一绝缘层上的半导体层，形成在该半导体层上的第二金属层，形成在该第一绝缘层、该半导体层及该第二金属层上的第二绝缘层，以及形成在该第二绝缘层及该第二金属层上并作为第二电极的像素电极。该第二绝缘层上开设有一个接触窗以暴露第二金属层。该像素电极经由该接触窗与该暴露的第二金属层电性连接。另，本发明实施例还公开了一种具有该存储电容的像素单元及一种该存储电容的制造方法。

Description

存储电容、像素单元及存储电容的制造方法
技术领域
本发明涉及半导体制造领域，尤其涉及一种存储电容、一种具有该存储电容的像素单元以及一种该存储电容的制造方法。
背景技术
薄膜晶体管矩阵(Thin Film Transistor Array，TFT Array)是液晶显示器(LiquidCrystal Display，LCD)不可获缺的重要显示组件，薄膜晶体管矩阵主要是由多个像素单元(pixel unit)、多条扫描线(scan line)以及多条数据线(data line)组成。这些像素单元电性连接扫描线与数据线，每个像素单元具有薄膜晶体管、液晶电容(liquid crystal capacitor，CLC)以及存储电容(storage capacitor，CS)。其中，薄膜晶体管对液晶电容进行充电以驱动液晶层内的液晶分子，从而使液晶显示器显示影像，同时，薄膜晶体管对存储电容进行充电，该存储电容使液晶电容两端的电压维持在一定值，即，在未进行数据更新之前，液晶电容两端电压通过存储电容维持住。
目前，存储电容包括第一金属层/绝缘层/第二金属层(Metal-Insulator-Metal，MIM)架构及第一金属层/绝缘层/铟锡金属氧化物(Metal-Insulator-ITO，MII)架构两种。其中，由于与薄膜晶体管电性连接的第二金属层下方伴随著半导体层，MIM架构的存储电容在正负翻周时电容值会变化，不稳定的存储电容会使得显示面板的显示特性也不稳定。另外，由于半导体层较与薄膜晶体管电性连接的第二金属层宽，即半导体层会相对第二金属层外漏一部分，可能会释放电子，同样也会影响显示面板的显示特性。而MII架构的存储电容之间的间隙较大，由于电容与距离成反比，若要想获得较大的存储电容值，则需要增大存储电容的面积，如此会降低液晶面板的开口率。
因此，有必要提供能够解决上述问题的存储电容、像素单元及存储电容的制造方法。
发明内容
为了解决上述技术问题，本发明实施例提供一种存储电容，包括基底，位于该基底上且由第一金属层形成的第一电极，形成在该基底及该第一电极上的第一绝缘层，形成在该第一绝缘层上的半导体层，形成在该半导体层上的第二金属层，形成在该第一绝缘层、该半导体层及该第二金属层上的第二绝缘层，以及形成在该第二绝缘层及该第二金属层上并作为第二电极的像素电极。该第二绝缘层上开设有一个接触窗以暴露第二金属层。该像素电极经由该接触窗与该暴露的第二金属层电性连接。
其中，该基底由玻璃或者塑胶制成。
其中，该第一电极为钼层、铝层、钛层或铜层，或者是任意两层的堆叠。
其中，该第一电极包括一共享线。
其中，该第一电极包括一扫描线。
为了解决上述技术问题，本发明实施例还提供了一种像素单元，包括存储电容及薄膜晶体管。该存储电容包括基底，位于该基底上且由第一金属层形成的第一电极，形成在该基底及该第一电极上的第一绝缘层，形成在该第一绝缘层上的半导体层，形成在该半导体层上的第二金属层，形成在该第一绝缘层、该半导体层及该第二金属层上的第二绝缘层，以及形成在该第二绝缘层及该第二金属层上并作为第二电极的像素电极。该第二绝缘层上开设有一个接触窗以暴露第二金属层。该像素电极经由该接触窗与该暴露的第二金属层电性连接。该薄膜晶体管与该像素电极电性连接。
其中，该第一电极为钼层、铝层、钛层或铜层，或者是任意两层的堆叠。
其中，该第一电极包括一共享线。
其中，该第一电极包括一扫描线。
为了解决上述技术问题，本发明实施例还提供了一种存储电容的制造方法，包括以下步骤：提供一个基底；在该基底上形成一个第一金属层，图案化该第一金属层以形成一个第一电极；在该基底及该第一电极上形成一个第一绝缘层；在该第一绝缘层上依次形成一个半导体层及一个第二金属层；在该第一绝缘层、该半导体层及该第二金属层上形成一个第二绝缘层，并暴露一部分的第二金属层；及在该第二绝缘层及该暴露的第二金属层上形成一作为第二电极的像素电极，以使该像素电极与该第二金属层电性接触。
本发明提供的存储电容、制造该存储电容的方法及像素单元中的第二金属层作为存储电容的一部分仅用于调整电容，而与薄膜晶体管连接的像素电极作为第二电极，其下方设置的是第二绝缘层，避免如MIM架构的存储电容中的第二金属层伴随半导体层，由此保证存储电容在正负翻周时电容值也能够保持稳定，同时能够避免半导体层释放电子，从而保证显示面板的显示特性。另外，由于该第二绝缘层上开设有一个接触窗以暴露第二金属层，且像素电极经由该接触窗与该暴露的第二金属层电性连接，由此减小了存储电容之间的间隙，提高了具有该存储电容的液晶面板的开口率。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1至图6是本发明一较佳实施例提供的存储电容的制造方法的示意图。
图7是本发明另一较佳实施例提供的像素单元的平面示意图。
具体实施例
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例一
请参阅图1至图6，本发明第一实施例提供的一种存储电容的制造方法，包括以下步骤：
第一步，请参阅图1，提供一个基底10，该基底10由玻璃或者塑胶制成。本实施例中，该基底10由玻璃制成。
第二步，请参阅图2，在该基底10上形成一个第一金属层，图案化该第一金属层以形成一个第一电极20。其中，该第一金属层为钼层、铝层、钛层或铜层，或者是任意两层的堆叠，该第一金属层通过溅射(sputtering)工艺形成在该基底10上，而图案化该第一金属层而形成该第一电极20则是采用光罩制程。
其中，光罩制程包括曝光、显影及蚀刻等步骤。具体地，首先，在第一金属层上覆上一层光致抗蚀剂(photo-resistance)层。接着，光线通过灰阶掩膜或半灰阶掩膜照射在该光致抗蚀剂层上以将该光致抗蚀剂层曝光。灰阶掩膜或半灰阶掩膜上具有与该第一电极20对应的图案，且该光致抗蚀剂层的曝光具有选择性，灰阶掩膜或半灰阶掩膜上的图案完整转印到该光致抗蚀剂层上。然后，利用合适的显影液(developer)除去部分光致抗蚀剂层，使得剩余的光致抗蚀剂层呈现出需要的图案，即呈现出与该第一电极20对应的图案。接着，通过蚀刻工艺将未被该剩余的光致抗蚀剂层遮盖的第一金属层去除，在此，蚀刻工艺可选用干式蚀刻、湿式蚀刻或者二者结合。最后，去除该剩余的光致抗蚀剂层，得到形成预定图案的第一电极20。
第三步，请参阅图3，在该基底10及该第一电极20上形成一个第一绝缘层30。该第一绝缘层30一般为SiNx层，其通过化学气相沉积(chemical vapordeposition，CVD)形成在该基底10及该第一电极20上。
第四步，请参阅图4，在该第一绝缘层30上依次形成一个半导体层40及一个第二金属层50。此步骤的实现方法与第二步类似，也是采用光罩制程制得。
第五步，请参阅图5，在该第一绝缘层30、该半导体层40及该第二金属层50上形成一个第二绝缘层60，并暴露一部分的第二金属层50。例如通过化学气相沉积的方式沉积氧化硅或氮化硅层在该第一绝缘层30、该半导体层40及该第二金属层50上，并且以光罩制程的方式形成该第二绝缘层60，以暴露第二金属层50形成接触窗52。
第六步，请参阅图6，在该第二绝缘层60及该暴露的第二金属层50上形成一作为第二电极的像素电极70，使该像素电极70与该第二金属层50电性接触，从而形成一个存储电容100。例如，沉积铟锡金属氧化物(ITO)在该第二绝缘层60及该暴露的第二金属层50上，使该像素电极70与该第二金属层50经由该接触窗52电性接触。
实施例二
请参阅图6，本发明第二实施例提供的存储电容100包括基底10、形成在位于该基底10上并由第一金属层形成的第一电极20、形成在该基底10及该第一电极20上的第一绝缘层30、形成在该第一绝缘层30上的半导体层40、形成在该半导体层40上的第二金属层50、形成在该第一绝缘层30、该半导体层40及该第二金属层50上的第二绝缘层60以及形成在该第二绝缘层60及该第二金属层50上并作为第二电极的像素电极70。
该基底10由玻璃或者塑胶制成。本实施例中，该基底10由玻璃制成。该第一电极20为钼层、铝层、钛层或铜层，或者是任意两层的堆叠。该第一绝缘层30一般为SiNx层。该第二绝缘层60为氧化硅或氮化硅层。该第二绝缘层60上开设有一个接触窗52以暴露第二金属层50。该像素电极70经由该接触窗52与该暴露的第二金属层50电性连接。该像素电极70为铟锡金属氧化物(ITO)材料制成的透明导电层。
请结合图7，在本实施例中，该第一电极20包括一共享线205。在其他实施例中，该第一电极20包括一扫描线202。
实施例三
请参见图7，本发明第三实施例提供的像素单元200由两条相邻的扫描线202及两条相邻的数据线204共同定义。该像素单元200包括薄膜晶体管206以及如第一实施例中的存储电容100。其中，该薄膜晶体管206的栅极电性连接扫描线202，源极电性连接数据线204，漏极电性连接该存储电容100中的像素电极70。该扫描线202为该薄膜晶体管206提供扫描电压以使该薄膜晶体管206导通。该数据线204为该薄膜晶体管206提供数据电压，使得该像素电极70显示相应于该数据电压的灰阶，该存储电容100在该薄膜晶体管206关闭期间存储该像素电极70的显示电压，即在未进行数据更新之前，该像素电极70的电压由存储电容100维持住。
本发明提供的存储电容100、制造该存储电容100的方法及像素单元200中的第二金属层50作为存储电容100的一部分并仅用于调整电容，而与薄膜晶体管206连接的像素电极70才是第二电极，其下方并非如MIM架构的存储电容中的第二金属层伴随半导体层，而是设置第二绝缘层60，由此保证存储电容100在正负翻周时电容值也能够保持稳定，同时能够避免半导体层40释放电子，从而保证显示面板的显示特性。另外，由于该第二绝缘层60上开设有一个接触窗52以暴露第二金属层50，且像素电极70经由该接触窗52与该暴露的第二金属层50电性连接，由此减小了存储电容100之间的间隙，由于电容值与距离成反比，在存储电容值相同的前提下，该存储电容100的面积较MII架构的存储电容的面积小，由此具有该存储电容100的液晶面板的开口率较高。
以上所揭露的仅为本发明较佳实施例而已，当然不能以此来限定本发明之权利范围，因此依本发明权利要求所作的等同变化，仍属本发明所涵盖的范围。

Claims (10)

1.一种存储电容，其特征在于，该存储电容(100)包括基底(10)，位于该基底(10)上且由第一金属层形成的第一电极(20)，形成在该基底(10)及该第一电极(20)上的第一绝缘层(30)，形成在该第一绝缘层(30)上的半导体层(40)，形成在该半导体层(40)上的第二金属层(50)，形成在该第一绝缘层(30)、该半导体层(40)及该第二金属层(50)上的第二绝缘层(60)，以及形成在该第二绝缘层(60)及该第二金属层(50)上并作为第二电极的像素电极(70)，该第二绝缘层(60)上开设有一个接触窗(52)以暴露第二金属层(50)，该像素电极(70)经由该接触窗(52)与该暴露的第二金属层(50)电性连接。
2.如权利要求1所述的存储电容，其特征在于，该基底(10)由玻璃或者塑胶制成。
3.如权利要求1所述的存储电容，其特征在于，该第一电极(20)为钼层、铝层、钛层或铜层，或者是任意两层的堆叠。
4.如权利要求1所述的存储电容，其特征在于，该第一电极(20)包括一共享线(205)。
5.如权利要求1所述的存储电容，其特征在于，该第一电极(20)包括一扫描线(202)。
6.一种像素单元，包括存储电容(100)及薄膜晶体管(206)，其特征在于，该存储电容(100)包括基底(10)，位于该基底(10)上且由第一金属层形成的第一电极(20)，形成在该基底(10)及该第一电极(20)上的第一绝缘层(30)，形成在该第一绝缘层(30)上的半导体层(40)，形成在该半导体层(40)上的第二金属层(50)，形成在该第一绝缘层(30)、该半导体层(40)及该第二金属层(50)上的第二绝缘层(60)，以及形成在该第二绝缘层(60)及该第二金属层(50)上并作为第二电极的像素电极(70)，该第二绝缘层(60)上开设有一个接触窗(52)以暴露第二金属层(50)，该像素电极(70)经由该接触窗(52)与该暴露的第二金属层(50)电性连接，该薄膜晶体管(206)与该像素电极(70)电性连接。
7.如权利要求6所述的像素单元，其特征在于，该第一电极(20)为钼层、铝层、钛层或铜层，或者是任意两层的堆叠。
8.如权利要求6所述的像素单元，其特征在于，该第一电极(20)包括一共享线(205)。
9.如权利要求6所述的像素单元，其特征在于，该第一电极(20)包括一扫描线(202)。
10.一种存储电容的制造方法，包括以下步骤：
提供一个基底(10)；
在该基底(10)上形成一个第一金属层，图案化该第一金属层以形成一个第一电极(20)；
在该基底(10)及该第一电极(20)上形成一个第一绝缘层(30)；
在该第一绝缘层(30)上依次形成一个半导体层(40)及一个第二金属层(50)；
在该第一绝缘层(30)、该半导体层(40)及该第二金属层(50)上形成一个第二绝缘层(60)，并暴露一部分的第二金属层(50)；及
在该第二绝缘层(60)及该暴露的第二金属层(50)上形成一作为第二电极的像素电极(70)，以使该像素电极(70)与该第二金属层(50)电性接触。
CN201410033377.7A 2014-01-23 2014-01-23 存储电容、像素单元及存储电容的制造方法 Pending CN103792744A (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201410033377.7A CN103792744A (zh) 2014-01-23 2014-01-23 存储电容、像素单元及存储电容的制造方法
PCT/CN2015/071294 WO2015110028A1 (zh) 2014-01-23 2015-01-22 存储电容、像素单元及存储电容的制造方法
US14/782,188 US20170192323A1 (en) 2014-01-23 2015-01-22 Storage capacitor, pixel unit and method for manufacturing storage capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410033377.7A CN103792744A (zh) 2014-01-23 2014-01-23 存储电容、像素单元及存储电容的制造方法

Publications (1)

Publication Number Publication Date
CN103792744A true CN103792744A (zh) 2014-05-14

Family

ID=50668571

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410033377.7A Pending CN103792744A (zh) 2014-01-23 2014-01-23 存储电容、像素单元及存储电容的制造方法

Country Status (3)

Country Link
US (1) US20170192323A1 (zh)
CN (1) CN103792744A (zh)
WO (1) WO2015110028A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015110028A1 (zh) * 2014-01-23 2015-07-30 深圳市华星光电技术有限公司 存储电容、像素单元及存储电容的制造方法
CN108761937A (zh) * 2018-05-09 2018-11-06 深圳市华星光电技术有限公司 阵列基板及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1901209A (zh) * 2005-06-09 2007-01-24 三星电子株式会社 薄膜晶体管阵列面板及其制造方法
CN101114097A (zh) * 2006-07-26 2008-01-30 三星电子株式会社 液晶显示器
US20120091460A1 (en) * 2010-10-18 2012-04-19 Samsung Mobile Display Co., Ltd. Display Device and Method for Manufacturing the Same
US20120267630A1 (en) * 2005-06-09 2012-10-25 Samsung Electronics Co., Ltd. Thin film transistor array panel and method of manufacturing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6872586B2 (en) * 2000-10-17 2005-03-29 Seiko Epson Corporation Method of manufacture of active matrix substrate and liquid crystal display device
TWI360708B (en) * 2007-12-17 2012-03-21 Au Optronics Corp Pixel structure, display panel, elecro-optical app
CN101819363B (zh) * 2009-02-27 2011-12-28 北京京东方光电科技有限公司 Tft-lcd阵列基板及其制造方法
CN103792744A (zh) * 2014-01-23 2014-05-14 深圳市华星光电技术有限公司 存储电容、像素单元及存储电容的制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1901209A (zh) * 2005-06-09 2007-01-24 三星电子株式会社 薄膜晶体管阵列面板及其制造方法
US20120267630A1 (en) * 2005-06-09 2012-10-25 Samsung Electronics Co., Ltd. Thin film transistor array panel and method of manufacturing the same
CN101114097A (zh) * 2006-07-26 2008-01-30 三星电子株式会社 液晶显示器
US20120091460A1 (en) * 2010-10-18 2012-04-19 Samsung Mobile Display Co., Ltd. Display Device and Method for Manufacturing the Same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015110028A1 (zh) * 2014-01-23 2015-07-30 深圳市华星光电技术有限公司 存储电容、像素单元及存储电容的制造方法
CN108761937A (zh) * 2018-05-09 2018-11-06 深圳市华星光电技术有限公司 阵列基板及其制作方法

Also Published As

Publication number Publication date
WO2015110028A1 (zh) 2015-07-30
US20170192323A1 (en) 2017-07-06

Similar Documents

Publication Publication Date Title
EP2741135B1 (en) Tft-lcd array substrate
US10254876B2 (en) Array substrate, fabricating method thereof and display device
US7951631B2 (en) Halftone mask, method of manufacturing the same, and method of manufacturing an array substrate using the same
US10615181B2 (en) Array substrate, display panel, manufacturing method, and display device
JP6139045B1 (ja) 走査アンテナ
EP3187929B1 (en) Array substrate and manufacturing method therefor, and display apparatus
CN104393000A (zh) 一种阵列基板及其制作方法、显示装置
US7196746B2 (en) Pixel structure and manufacturing method thereof
US9711544B2 (en) Thin film transistor and manufacturing method thereof, array substrate and manufacturing method thereof, display device
US10825840B2 (en) Thin-film transistor panel
EP2991121B1 (en) Array substrate, method for manufacturing array substrate and display device
CN104280951A (zh) 阵列基板及其制造方法、显示装置
US8115215B2 (en) Array substrate and method for manufacturing the same
US8164702B2 (en) Display substrate, method of manufacturing the display substrate and display device having the display substrate
CN101021659B (zh) 液晶像素及其制造方法与液晶显示器
US9618809B2 (en) Liquid crystal display and method for manufacturing same
CN103280428B (zh) Tft-lcd阵列面板结构及其制造方法
CN102779783A (zh) 一种像素结构及其制造方法、显示装置
CN106873272B (zh) 一种多畴垂直取向模式的液晶显示面板及其制作方法
CN102610564A (zh) Tft阵列基板的制作方法
CN104570523A (zh) 一种阵列基板、阵列基板的形成方法及液晶显示装置
CN103792744A (zh) 存储电容、像素单元及存储电容的制造方法
US20140078436A1 (en) Pixel structure for liquid crystal display, array substrate and liquid crystal display
CN100552519C (zh) 半穿透反射式液晶显示阵列基板的像素结构及制造方法
CN103117284A (zh) 一种阵列基板及其制作方法、显示装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20140514