JP2012079399A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2012079399A
JP2012079399A JP2011190402A JP2011190402A JP2012079399A JP 2012079399 A JP2012079399 A JP 2012079399A JP 2011190402 A JP2011190402 A JP 2011190402A JP 2011190402 A JP2011190402 A JP 2011190402A JP 2012079399 A JP2012079399 A JP 2012079399A
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Japan
Prior art keywords
transistor
oxide semiconductor
layer
oxide
potential
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JP2011190402A
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Japanese (ja)
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JP2012079399A5 (enExample
Inventor
Koichiro Kamata
康一郎 鎌田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2011190402A priority Critical patent/JP2012079399A/ja
Publication of JP2012079399A publication Critical patent/JP2012079399A/ja
Publication of JP2012079399A5 publication Critical patent/JP2012079399A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2011190402A 2010-09-10 2011-09-01 半導体装置 Withdrawn JP2012079399A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011190402A JP2012079399A (ja) 2010-09-10 2011-09-01 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010202553 2010-09-10
JP2010202553 2010-09-10
JP2011190402A JP2012079399A (ja) 2010-09-10 2011-09-01 半導体装置

Related Child Applications (1)

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JP2015222100A Division JP6034941B2 (ja) 2010-09-10 2015-11-12 半導体装置

Publications (2)

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JP2012079399A true JP2012079399A (ja) 2012-04-19
JP2012079399A5 JP2012079399A5 (enExample) 2014-10-09

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JP2011190402A Withdrawn JP2012079399A (ja) 2010-09-10 2011-09-01 半導体装置
JP2015222100A Expired - Fee Related JP6034941B2 (ja) 2010-09-10 2015-11-12 半導体装置

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Country Status (3)

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US (1) US8358530B2 (enExample)
JP (2) JP2012079399A (enExample)
CN (1) CN102403040B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014022492A (ja) * 2012-07-17 2014-02-03 Semiconductor Energy Lab Co Ltd 半導体装置及びその製造方法
JP2014142986A (ja) * 2012-12-26 2014-08-07 Semiconductor Energy Lab Co Ltd 半導体装置
JP2015149116A (ja) * 2010-08-31 2015-08-20 株式会社半導体エネルギー研究所 半導体装置
KR20160067166A (ko) * 2013-10-10 2016-06-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2024003133A (ja) * 2013-06-26 2024-01-11 株式会社半導体エネルギー研究所 半導体装置

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Publication number Priority date Publication date Assignee Title
CN102612749B (zh) 2009-11-06 2015-04-01 株式会社半导体能源研究所 半导体器件
TWI545587B (zh) * 2010-08-06 2016-08-11 半導體能源研究所股份有限公司 半導體裝置及驅動半導體裝置的方法
US8520426B2 (en) * 2010-09-08 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
US8686415B2 (en) * 2010-12-17 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014045175A (ja) 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd 半導体装置
CN102881654B (zh) * 2012-09-29 2016-03-23 京东方科技集团股份有限公司 薄膜晶体管阵列基板及其制备方法、有源矩阵驱动显示装置
KR20150128820A (ko) 2013-03-14 2015-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 구동 방법 및 반도체 장치
JP2014199708A (ja) 2013-03-14 2014-10-23 株式会社半導体エネルギー研究所 半導体装置の駆動方法
TWI641208B (zh) * 2013-07-26 2018-11-11 日商半導體能源研究所股份有限公司 直流對直流轉換器
JP6560508B2 (ja) * 2014-03-13 2019-08-14 株式会社半導体エネルギー研究所 半導体装置
JP6538426B2 (ja) 2014-05-30 2019-07-03 株式会社半導体エネルギー研究所 半導体装置及び電子機器
KR20170068511A (ko) 2014-10-06 2017-06-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
JP6667267B2 (ja) 2014-12-08 2020-03-18 株式会社半導体エネルギー研究所 半導体装置
WO2016092416A1 (en) 2014-12-11 2016-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and electronic device
US9633710B2 (en) 2015-01-23 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Method for operating semiconductor device
KR20160117222A (ko) 2015-03-30 2016-10-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 검사 방법
US9589611B2 (en) 2015-04-01 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Memory device, semiconductor device, and electronic device
CN106991956A (zh) * 2017-06-05 2017-07-28 京东方科技集团股份有限公司 一种像素电路及其驱动方法和其制备方法、显示装置
KR20250109789A (ko) * 2018-09-07 2025-07-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN110364215B (zh) * 2019-07-16 2021-05-25 武汉新芯集成电路制造有限公司 闪存htol测试方法
KR20230122430A (ko) 2022-02-14 2023-08-22 삼성전자주식회사 메모리 장치
KR102862092B1 (ko) * 2022-12-16 2025-09-22 포항공과대학교 산학협력단 시냅스 소자 및 그 구동 방법

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222093A (ja) * 1985-03-28 1986-10-02 Toshiba Corp 不揮発性半導体記憶装置
JPH0581887A (ja) * 1991-09-19 1993-04-02 Fujitsu Ltd 半導体記憶装置
JPH05167073A (ja) * 1991-12-17 1993-07-02 Hitachi Ltd 半導体集積回路装置及びその製造方法
JPH10256560A (ja) * 1997-01-10 1998-09-25 Sony Corp 半導体装置の駆動方法および半導体装置
JP2000150900A (ja) * 1998-11-17 2000-05-30 Japan Science & Technology Corp トランジスタ及び半導体装置
JP2001351386A (ja) * 2000-06-07 2001-12-21 Sony Corp 半導体記憶装置およびその動作方法
JP2002368226A (ja) * 2001-06-11 2002-12-20 Sharp Corp 半導体装置、半導体記憶装置及びその製造方法、並びに携帯情報機器
JP2006502597A (ja) * 2002-05-21 2006-01-19 ザ・ステート・オブ・オレゴン・アクティング・バイ・アンド・スルー・ザ・ステート・ボード・オブ・ハイヤー・エデュケーション・オン・ビハーフ・オブ・オレゴン・ステート・ユニバーシティ トランジスタ構造及びその製作方法
JP2007220820A (ja) * 2006-02-15 2007-08-30 Kochi Prefecture Sangyo Shinko Center 薄膜トランジスタアレイ及びその製法
JP2010021170A (ja) * 2008-07-08 2010-01-28 Hitachi Ltd 半導体装置およびその製造方法

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EP0053878B1 (en) 1980-12-08 1985-08-14 Kabushiki Kaisha Toshiba Semiconductor memory device
JPS6034199B2 (ja) 1980-12-20 1985-08-07 株式会社東芝 半導体記憶装置
JP4103968B2 (ja) 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
JPH11120777A (ja) * 1997-10-07 1999-04-30 Sony Corp 不揮発性半導体記憶装置
JP2923643B2 (ja) 1998-02-27 1999-07-26 株式会社日立製作所 多値メモリの記録方法および半導体記憶装置
US6804142B2 (en) * 2002-11-12 2004-10-12 Micron Technology, Inc. 6F2 3-transistor DRAM gain cell
US6950348B2 (en) * 2003-06-20 2005-09-27 Sandisk Corporation Source controlled operation of non-volatile memories
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US20060102910A1 (en) * 2004-10-29 2006-05-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light emitting device
KR100866623B1 (ko) * 2006-10-16 2008-11-03 삼성전자주식회사 저전압에서 동작할 수 있는 비휘발성 메모리 장치의 센스앰프 회로 및 이를 포함하는 비휘발성 메모리 장치
US7898885B2 (en) * 2007-07-19 2011-03-01 Micron Technology, Inc. Analog sensing of memory cells in a solid state memory device
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JP5781720B2 (ja) 2008-12-15 2015-09-24 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
SG10201910510UA (en) 2009-10-29 2020-01-30 Semiconductor Energy Lab Semiconductor device
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KR101911382B1 (ko) * 2009-11-27 2018-10-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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Publication number Priority date Publication date Assignee Title
JPS61222093A (ja) * 1985-03-28 1986-10-02 Toshiba Corp 不揮発性半導体記憶装置
JPH0581887A (ja) * 1991-09-19 1993-04-02 Fujitsu Ltd 半導体記憶装置
JPH05167073A (ja) * 1991-12-17 1993-07-02 Hitachi Ltd 半導体集積回路装置及びその製造方法
JPH10256560A (ja) * 1997-01-10 1998-09-25 Sony Corp 半導体装置の駆動方法および半導体装置
JP2000150900A (ja) * 1998-11-17 2000-05-30 Japan Science & Technology Corp トランジスタ及び半導体装置
JP2001351386A (ja) * 2000-06-07 2001-12-21 Sony Corp 半導体記憶装置およびその動作方法
JP2002368226A (ja) * 2001-06-11 2002-12-20 Sharp Corp 半導体装置、半導体記憶装置及びその製造方法、並びに携帯情報機器
JP2006502597A (ja) * 2002-05-21 2006-01-19 ザ・ステート・オブ・オレゴン・アクティング・バイ・アンド・スルー・ザ・ステート・ボード・オブ・ハイヤー・エデュケーション・オン・ビハーフ・オブ・オレゴン・ステート・ユニバーシティ トランジスタ構造及びその製作方法
JP2007220820A (ja) * 2006-02-15 2007-08-30 Kochi Prefecture Sangyo Shinko Center 薄膜トランジスタアレイ及びその製法
JP2010021170A (ja) * 2008-07-08 2010-01-28 Hitachi Ltd 半導体装置およびその製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015149116A (ja) * 2010-08-31 2015-08-20 株式会社半導体エネルギー研究所 半導体装置
JP2014022492A (ja) * 2012-07-17 2014-02-03 Semiconductor Energy Lab Co Ltd 半導体装置及びその製造方法
JP2014142986A (ja) * 2012-12-26 2014-08-07 Semiconductor Energy Lab Co Ltd 半導体装置
JP2024003133A (ja) * 2013-06-26 2024-01-11 株式会社半導体エネルギー研究所 半導体装置
JP7555468B2 (ja) 2013-06-26 2024-09-24 株式会社半導体エネルギー研究所 半導体装置
KR20160067166A (ko) * 2013-10-10 2016-06-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102253489B1 (ko) * 2013-10-10 2021-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치

Also Published As

Publication number Publication date
US8358530B2 (en) 2013-01-22
JP6034941B2 (ja) 2016-11-30
US20120063204A1 (en) 2012-03-15
CN102403040A (zh) 2012-04-04
JP2016042407A (ja) 2016-03-31
CN102403040B (zh) 2016-04-13

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