CN102403040B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN102403040B
CN102403040B CN201110278114.9A CN201110278114A CN102403040B CN 102403040 B CN102403040 B CN 102403040B CN 201110278114 A CN201110278114 A CN 201110278114A CN 102403040 B CN102403040 B CN 102403040B
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CN
China
Prior art keywords
transistor
oxide semiconductor
layer
oxide
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201110278114.9A
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English (en)
Chinese (zh)
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CN102403040A (zh
Inventor
镰田康一郎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of CN102403040A publication Critical patent/CN102403040A/zh
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Publication of CN102403040B publication Critical patent/CN102403040B/zh
Expired - Fee Related legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
CN201110278114.9A 2010-09-10 2011-09-09 半导体装置 Expired - Fee Related CN102403040B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010202553 2010-09-10
JP2010-202553 2010-09-10

Publications (2)

Publication Number Publication Date
CN102403040A CN102403040A (zh) 2012-04-04
CN102403040B true CN102403040B (zh) 2016-04-13

Family

ID=45806587

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110278114.9A Expired - Fee Related CN102403040B (zh) 2010-09-10 2011-09-09 半导体装置

Country Status (3)

Country Link
US (1) US8358530B2 (enExample)
JP (2) JP2012079399A (enExample)
CN (1) CN102403040B (enExample)

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JP5702689B2 (ja) * 2010-08-31 2015-04-15 株式会社半導体エネルギー研究所 半導体装置の駆動方法、及び半導体装置
US8520426B2 (en) * 2010-09-08 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
US8686415B2 (en) * 2010-12-17 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6006558B2 (ja) * 2012-07-17 2016-10-12 株式会社半導体エネルギー研究所 半導体装置及びその製造方法
JP2014045175A (ja) 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd 半導体装置
CN102881654B (zh) * 2012-09-29 2016-03-23 京东方科技集团股份有限公司 薄膜晶体管阵列基板及其制备方法、有源矩阵驱动显示装置
JP2014142986A (ja) * 2012-12-26 2014-08-07 Semiconductor Energy Lab Co Ltd 半導体装置
KR20150128820A (ko) 2013-03-14 2015-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 구동 방법 및 반도체 장치
JP2014199708A (ja) 2013-03-14 2014-10-23 株式会社半導体エネルギー研究所 半導体装置の駆動方法
JP6357363B2 (ja) * 2013-06-26 2018-07-11 株式会社半導体エネルギー研究所 記憶装置
TWI641208B (zh) * 2013-07-26 2018-11-11 日商半導體能源研究所股份有限公司 直流對直流轉換器
TWI741298B (zh) 2013-10-10 2021-10-01 日商半導體能源研究所股份有限公司 半導體裝置
JP6560508B2 (ja) * 2014-03-13 2019-08-14 株式会社半導体エネルギー研究所 半導体装置
JP6538426B2 (ja) 2014-05-30 2019-07-03 株式会社半導体エネルギー研究所 半導体装置及び電子機器
KR20170068511A (ko) 2014-10-06 2017-06-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
JP6667267B2 (ja) 2014-12-08 2020-03-18 株式会社半導体エネルギー研究所 半導体装置
WO2016092416A1 (en) 2014-12-11 2016-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and electronic device
US9633710B2 (en) 2015-01-23 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Method for operating semiconductor device
KR20160117222A (ko) 2015-03-30 2016-10-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 검사 방법
US9589611B2 (en) 2015-04-01 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Memory device, semiconductor device, and electronic device
CN106991956A (zh) * 2017-06-05 2017-07-28 京东方科技集团股份有限公司 一种像素电路及其驱动方法和其制备方法、显示装置
KR20250109789A (ko) * 2018-09-07 2025-07-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN110364215B (zh) * 2019-07-16 2021-05-25 武汉新芯集成电路制造有限公司 闪存htol测试方法
KR20230122430A (ko) 2022-02-14 2023-08-22 삼성전자주식회사 메모리 장치
KR102862092B1 (ko) * 2022-12-16 2025-09-22 포항공과대학교 산학협력단 시냅스 소자 및 그 구동 방법

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JP2001351386A (ja) * 2000-06-07 2001-12-21 Sony Corp 半導体記憶装置およびその動作方法
CN1664955A (zh) * 2004-02-03 2005-09-07 基洛帕斯技术公司 基于晶体管栅极氧化物击穿的组合现场可编程门阵列
CN101828233A (zh) * 2007-10-15 2010-09-08 S.阿夸半导体有限公司 利用两个选通晶体管的多值存储器存储

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JPH05167073A (ja) * 1991-12-17 1993-07-02 Hitachi Ltd 半導体集積回路装置及びその製造方法
JP4103968B2 (ja) 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
JPH10256560A (ja) * 1997-01-10 1998-09-25 Sony Corp 半導体装置の駆動方法および半導体装置
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JP5781720B2 (ja) 2008-12-15 2015-09-24 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
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JP2001351386A (ja) * 2000-06-07 2001-12-21 Sony Corp 半導体記憶装置およびその動作方法
CN1664955A (zh) * 2004-02-03 2005-09-07 基洛帕斯技术公司 基于晶体管栅极氧化物击穿的组合现场可编程门阵列
CN101828233A (zh) * 2007-10-15 2010-09-08 S.阿夸半导体有限公司 利用两个选通晶体管的多值存储器存储

Also Published As

Publication number Publication date
US8358530B2 (en) 2013-01-22
JP6034941B2 (ja) 2016-11-30
US20120063204A1 (en) 2012-03-15
CN102403040A (zh) 2012-04-04
JP2016042407A (ja) 2016-03-31
JP2012079399A (ja) 2012-04-19

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