JP2012049364A5 - - Google Patents
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- Publication number
- JP2012049364A5 JP2012049364A5 JP2010190754A JP2010190754A JP2012049364A5 JP 2012049364 A5 JP2012049364 A5 JP 2012049364A5 JP 2010190754 A JP2010190754 A JP 2010190754A JP 2010190754 A JP2010190754 A JP 2010190754A JP 2012049364 A5 JP2012049364 A5 JP 2012049364A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- forming
- metal electrode
- barrier layer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910052782 aluminium Inorganic materials 0.000 claims 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 15
- 239000004065 semiconductor Substances 0.000 claims 15
- 230000004888 barrier function Effects 0.000 claims 14
- 229910052751 metal Inorganic materials 0.000 claims 12
- 239000002184 metal Substances 0.000 claims 12
- 238000004519 manufacturing process Methods 0.000 claims 7
- 238000004544 sputter deposition Methods 0.000 claims 6
- 238000000034 method Methods 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000001953 recrystallisation Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010190754A JP5956106B2 (ja) | 2010-08-27 | 2010-08-27 | 半導体装置の製造方法 |
| US13/207,002 US8680599B2 (en) | 2010-08-27 | 2011-08-10 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010190754A JP5956106B2 (ja) | 2010-08-27 | 2010-08-27 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012049364A JP2012049364A (ja) | 2012-03-08 |
| JP2012049364A5 true JP2012049364A5 (enExample) | 2013-06-06 |
| JP5956106B2 JP5956106B2 (ja) | 2016-07-20 |
Family
ID=45696045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010190754A Active JP5956106B2 (ja) | 2010-08-27 | 2010-08-27 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8680599B2 (enExample) |
| JP (1) | JP5956106B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6096013B2 (ja) | 2013-03-15 | 2017-03-15 | 旭化成エレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
| US10290701B1 (en) * | 2018-03-28 | 2019-05-14 | Taiwan Semiconductor Manufacturing Company Ltd. | MIM capacitor, semiconductor structure including MIM capacitors and method for manufacturing the same |
| US10903425B2 (en) * | 2018-09-05 | 2021-01-26 | International Business Machines Corporation | Oxygen vacancy and filament-loss protection for resistive switching devices |
| CN110970557A (zh) * | 2018-09-28 | 2020-04-07 | 中芯国际集成电路制造(上海)有限公司 | 电容器件及其形成方法 |
| CN113394341B (zh) * | 2020-03-13 | 2024-07-26 | 联华电子股份有限公司 | 金属-绝缘层-金属电容器及其制作方法 |
| US12308309B2 (en) * | 2021-11-17 | 2025-05-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device with integrated metal-insulator-metal capacitors |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03225822A (ja) * | 1990-01-31 | 1991-10-04 | Hitachi Ltd | 配線の製造方法 |
| EP0867940A3 (en) * | 1997-03-27 | 1999-10-13 | Applied Materials, Inc. | An underlayer for an aluminum interconnect |
| JP3082722B2 (ja) | 1997-10-07 | 2000-08-28 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| JP3693875B2 (ja) | 2000-01-26 | 2005-09-14 | Ｎｅｃエレクトロニクス株式会社 | 回路製造方法 |
| US6342734B1 (en) * | 2000-04-27 | 2002-01-29 | Lsi Logic Corporation | Interconnect-integrated metal-insulator-metal capacitor and method of fabricating same |
| JP4228560B2 (ja) | 2000-11-01 | 2009-02-25 | ソニー株式会社 | キャパシタ素子及びその製造方法 |
| JP2003092299A (ja) * | 2001-09-18 | 2003-03-28 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| KR100818058B1 (ko) * | 2002-06-28 | 2008-03-31 | 매그나칩 반도체 유한회사 | 엠아이엠 캐패시터 형성방법 |
| US7078785B2 (en) * | 2003-09-23 | 2006-07-18 | Freescale Semiconductor, Inc. | Semiconductor device and making thereof |
| US7112507B2 (en) * | 2003-11-24 | 2006-09-26 | Infineon Technologies Ag | MIM capacitor structure and method of fabrication |
| JP2007188935A (ja) | 2006-01-11 | 2007-07-26 | Matsushita Electric Ind Co Ltd | Ｍｉｍ容量素子およびその製造方法 |
| JP4977400B2 (ja) | 2006-05-09 | 2012-07-18 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| JP2008016464A (ja) | 2006-07-03 | 2008-01-24 | Matsushita Electric Ind Co Ltd | 半導体装置及び半導体装置の製造方法 |
| JP5135827B2 (ja) * | 2007-02-27 | 2013-02-06 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
| JP2008270407A (ja) | 2007-04-18 | 2008-11-06 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| US8039924B2 (en) * | 2007-07-09 | 2011-10-18 | Renesas Electronics Corporation | Semiconductor device including capacitor element provided above wiring layer that includes wiring with an upper surface having protruding portion |
| KR20100041179A (ko) * | 2008-10-13 | 2010-04-22 | 매그나칩 반도체 유한회사 | 유전체, 이를 구비한 캐패시터 및 그 제조방법, 반도체 소자 제조방법 |
| US7915135B2 (en) * | 2009-04-30 | 2011-03-29 | United Microelectronics Corp. | Method of making multi-layer structure for metal-insulator-metal capacitor |
-
2010
- 2010-08-27 JP JP2010190754A patent/JP5956106B2/ja active Active
-
2011
- 2011-08-10 US US13/207,002 patent/US8680599B2/en active Active
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