JP5956106B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP5956106B2 JP5956106B2 JP2010190754A JP2010190754A JP5956106B2 JP 5956106 B2 JP5956106 B2 JP 5956106B2 JP 2010190754 A JP2010190754 A JP 2010190754A JP 2010190754 A JP2010190754 A JP 2010190754A JP 5956106 B2 JP5956106 B2 JP 5956106B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- aluminum alloy
- lower electrode
- alloy layer
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7687—Thin films associated with contacts of capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010190754A JP5956106B2 (ja) | 2010-08-27 | 2010-08-27 | 半導体装置の製造方法 |
| US13/207,002 US8680599B2 (en) | 2010-08-27 | 2011-08-10 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010190754A JP5956106B2 (ja) | 2010-08-27 | 2010-08-27 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012049364A JP2012049364A (ja) | 2012-03-08 |
| JP2012049364A5 JP2012049364A5 (enExample) | 2013-06-06 |
| JP5956106B2 true JP5956106B2 (ja) | 2016-07-20 |
Family
ID=45696045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010190754A Active JP5956106B2 (ja) | 2010-08-27 | 2010-08-27 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8680599B2 (enExample) |
| JP (1) | JP5956106B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6096013B2 (ja) | 2013-03-15 | 2017-03-15 | 旭化成エレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
| US10290701B1 (en) * | 2018-03-28 | 2019-05-14 | Taiwan Semiconductor Manufacturing Company Ltd. | MIM capacitor, semiconductor structure including MIM capacitors and method for manufacturing the same |
| US10903425B2 (en) * | 2018-09-05 | 2021-01-26 | International Business Machines Corporation | Oxygen vacancy and filament-loss protection for resistive switching devices |
| CN110970557A (zh) * | 2018-09-28 | 2020-04-07 | 中芯国际集成电路制造(上海)有限公司 | 电容器件及其形成方法 |
| CN113394341B (zh) | 2020-03-13 | 2024-07-26 | 联华电子股份有限公司 | 金属-绝缘层-金属电容器及其制作方法 |
| US12308309B2 (en) * | 2021-11-17 | 2025-05-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device with integrated metal-insulator-metal capacitors |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03225822A (ja) * | 1990-01-31 | 1991-10-04 | Hitachi Ltd | 配線の製造方法 |
| TW460597B (en) * | 1997-03-27 | 2001-10-21 | Applied Materials Inc | A barrier layer structure for use in semiconductors and a method of producing an aluminum-comprising layer having a 111 crystal orientation |
| JP3082722B2 (ja) | 1997-10-07 | 2000-08-28 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| JP3693875B2 (ja) | 2000-01-26 | 2005-09-14 | Necエレクトロニクス株式会社 | 回路製造方法 |
| US6342734B1 (en) * | 2000-04-27 | 2002-01-29 | Lsi Logic Corporation | Interconnect-integrated metal-insulator-metal capacitor and method of fabricating same |
| JP4228560B2 (ja) * | 2000-11-01 | 2009-02-25 | ソニー株式会社 | キャパシタ素子及びその製造方法 |
| JP2003092299A (ja) * | 2001-09-18 | 2003-03-28 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| KR100818058B1 (ko) * | 2002-06-28 | 2008-03-31 | 매그나칩 반도체 유한회사 | 엠아이엠 캐패시터 형성방법 |
| US7078785B2 (en) | 2003-09-23 | 2006-07-18 | Freescale Semiconductor, Inc. | Semiconductor device and making thereof |
| US7112507B2 (en) * | 2003-11-24 | 2006-09-26 | Infineon Technologies Ag | MIM capacitor structure and method of fabrication |
| JP2007188935A (ja) | 2006-01-11 | 2007-07-26 | Matsushita Electric Ind Co Ltd | Mim容量素子およびその製造方法 |
| JP4977400B2 (ja) | 2006-05-09 | 2012-07-18 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| JP2008016464A (ja) | 2006-07-03 | 2008-01-24 | Matsushita Electric Ind Co Ltd | 半導体装置及び半導体装置の製造方法 |
| JP5135827B2 (ja) * | 2007-02-27 | 2013-02-06 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
| JP2008270407A (ja) | 2007-04-18 | 2008-11-06 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| US8039924B2 (en) * | 2007-07-09 | 2011-10-18 | Renesas Electronics Corporation | Semiconductor device including capacitor element provided above wiring layer that includes wiring with an upper surface having protruding portion |
| KR20100041179A (ko) * | 2008-10-13 | 2010-04-22 | 매그나칩 반도체 유한회사 | 유전체, 이를 구비한 캐패시터 및 그 제조방법, 반도체 소자 제조방법 |
| US7915135B2 (en) * | 2009-04-30 | 2011-03-29 | United Microelectronics Corp. | Method of making multi-layer structure for metal-insulator-metal capacitor |
-
2010
- 2010-08-27 JP JP2010190754A patent/JP5956106B2/ja active Active
-
2011
- 2011-08-10 US US13/207,002 patent/US8680599B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012049364A (ja) | 2012-03-08 |
| US20120049369A1 (en) | 2012-03-01 |
| US8680599B2 (en) | 2014-03-25 |
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