JP2015525040A5 - - Google Patents

Download PDF

Info

Publication number
JP2015525040A5
JP2015525040A5 JP2015524779A JP2015524779A JP2015525040A5 JP 2015525040 A5 JP2015525040 A5 JP 2015525040A5 JP 2015524779 A JP2015524779 A JP 2015524779A JP 2015524779 A JP2015524779 A JP 2015524779A JP 2015525040 A5 JP2015525040 A5 JP 2015525040A5
Authority
JP
Japan
Prior art keywords
metal layer
layer
edge
topology
topographic structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2015524779A
Other languages
English (en)
Japanese (ja)
Other versions
JP6142444B2 (ja
JP2015525040A (ja
Filing date
Publication date
Priority claimed from DE102012107155.1A external-priority patent/DE102012107155B4/de
Application filed filed Critical
Publication of JP2015525040A publication Critical patent/JP2015525040A/ja
Publication of JP2015525040A5 publication Critical patent/JP2015525040A5/ja
Application granted granted Critical
Publication of JP6142444B2 publication Critical patent/JP6142444B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2015524779A 2012-08-03 2013-07-31 トポグラフィー構造及びその製造方法 Expired - Fee Related JP6142444B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102012107155.1A DE102012107155B4 (de) 2012-08-03 2012-08-03 Topografische Struktur und Verfahren zu deren Herstellung
DE102012107155.1 2012-08-03
PCT/EP2013/066115 WO2014020077A1 (de) 2012-08-03 2013-07-31 Topografische struktur und verfahren zu deren herstellung

Publications (3)

Publication Number Publication Date
JP2015525040A JP2015525040A (ja) 2015-08-27
JP2015525040A5 true JP2015525040A5 (enExample) 2017-04-06
JP6142444B2 JP6142444B2 (ja) 2017-06-07

Family

ID=48906263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015524779A Expired - Fee Related JP6142444B2 (ja) 2012-08-03 2013-07-31 トポグラフィー構造及びその製造方法

Country Status (4)

Country Link
US (1) US10491189B2 (enExample)
JP (1) JP6142444B2 (enExample)
DE (1) DE102012107155B4 (enExample)
WO (1) WO2014020077A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6260309B2 (ja) * 2014-01-31 2018-01-17 セイコーエプソン株式会社 表示装置
US10003014B2 (en) * 2014-06-20 2018-06-19 International Business Machines Corporation Method of forming an on-pitch self-aligned hard mask for contact to a tunnel junction using ion beam etching
DE102020118371A1 (de) 2020-07-13 2022-01-13 Heraeus Deutschland GmbH & Co. KG Mehrlagige Ringelektrode mit mehreren Öffnungen

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5081559A (en) * 1991-02-28 1992-01-14 Micron Technology, Inc. Enclosed ferroelectric stacked capacitor
US5335138A (en) * 1993-02-12 1994-08-02 Micron Semiconductor, Inc. High dielectric constant capacitor and method of manufacture
US5489548A (en) * 1994-08-01 1996-02-06 Texas Instruments Incorporated Method of forming high-dielectric-constant material electrodes comprising sidewall spacers
JP4820520B2 (ja) * 2000-02-22 2011-11-24 エヌエックスピー ビー ヴィ 担体基板上の音響反射層に音響共振子を備えた圧電フィルタの製造方法
DE10045090A1 (de) 2000-09-12 2002-03-28 Infineon Technologies Ag Akustischer Resonator
DE10200741A1 (de) 2002-01-11 2003-07-24 Infineon Technologies Ag Verfahren zur Herstellung einer topologieoptimierten Elektrode für einen Resonator in Dünnfilmtechnologie
TW540173B (en) * 2002-05-03 2003-07-01 Asia Pacific Microsystems Inc Bulk acoustic device having integrated fine-tuning and trimming devices
US7059711B2 (en) * 2003-02-07 2006-06-13 Canon Kabushiki Kaisha Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head
US6954121B2 (en) * 2003-06-09 2005-10-11 Agilent Technologies, Inc. Method for controlling piezoelectric coupling coefficient in film bulk acoustic resonators and apparatus embodying the method
US6924717B2 (en) * 2003-06-30 2005-08-02 Intel Corporation Tapered electrode in an acoustic resonator
US7358831B2 (en) * 2003-10-30 2008-04-15 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator (FBAR) devices with simplified packaging
JP3945486B2 (ja) * 2004-02-18 2007-07-18 ソニー株式会社 薄膜バルク音響共振子およびその製造方法
JP4373949B2 (ja) * 2004-04-20 2009-11-25 株式会社東芝 薄膜圧電共振器及びその製造方法
DE102004053318A1 (de) * 2004-11-04 2006-05-11 Epcos Ag Mit akustischen Volumenwellen arbeitender Resonator
JP4756461B2 (ja) 2005-10-12 2011-08-24 宇部興産株式会社 窒化アルミニウム薄膜およびそれを用いた圧電薄膜共振子
WO2007119643A1 (ja) * 2006-03-31 2007-10-25 Ube Industries, Ltd. 圧電薄膜共振子、圧電薄膜デバイスおよびその製造方法
JP2007295280A (ja) * 2006-04-25 2007-11-08 Toshiba Corp 電子素子
EP1997635B1 (en) * 2007-05-30 2011-07-27 Océ-Technologies B.V. Piezoelectric actuator and method of producing the same
US7768364B2 (en) * 2008-06-09 2010-08-03 Maxim Integrated Products, Inc. Bulk acoustic resonators with multi-layer electrodes

Similar Documents

Publication Publication Date Title
US11316006B2 (en) Porous region structure and method of manufacture thereof
TWI605142B (zh) 具有增進的表面輪廓和改善的性能的矽濺射靶及製造其之方法
TW201225198A (en) Apparatus and methods for evaporation including test wafer holder
WO2011114989A1 (ja) 薄膜の形成方法
KR100479289B1 (ko) Ｓａｗ 디바이스 및 그 제조 방법
JP2015525040A5 (enExample)
JP6142444B2 (ja) トポグラフィー構造及びその製造方法
JP2012049364A (ja) 半導体装置およびその製造方法
KR20220036855A (ko) 저 결함 Al1-xScxN 막 성막 방법
CN106558599B (zh) 电阻随机存取存储器及其形成方法
US8951909B2 (en) Integrated circuit structure and formation
CN103187244B (zh) 一种改善半导体晶圆电容制程中介质分层的方法
JP4571836B2 (ja) 半導体装置およびその製造方法
US20130230982A1 (en) Method for manufacturing semiconductor device
JP2009141230A (ja) 半導体装置の製造方法および半導体装置製造用スパッタ装置
TW200805502A (en) Semiconductor device and method of manufacturing the same
JP2004140198A (ja) 半導体装置およびその製造方法
CN103094188B (zh) 一种制作芯片上熔丝窗口的方法及熔丝窗口
WO2006093023A1 (ja) 半導体装置及びその製造方法
US20050287737A1 (en) Method for forming storage node electrode of capacitor
TWI294686B (en) Method of manufacturing displays and apparatus for manufacturing displays
US12400951B2 (en) Semiconductor device and method of manufacturing the same
JP6082165B2 (ja) 金属膜および金属膜の成膜方法
JP2009021514A (ja) 積層型薄膜キャパシタおよびその製造方法
JP4978114B2 (ja) 圧電振動片の製造方法