JP6142444B2 - トポグラフィー構造及びその製造方法 - Google Patents

トポグラフィー構造及びその製造方法 Download PDF

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Publication number
JP6142444B2
JP6142444B2 JP2015524779A JP2015524779A JP6142444B2 JP 6142444 B2 JP6142444 B2 JP 6142444B2 JP 2015524779 A JP2015524779 A JP 2015524779A JP 2015524779 A JP2015524779 A JP 2015524779A JP 6142444 B2 JP6142444 B2 JP 6142444B2
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metal layer
layer
edge
topology
topographic structure
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Japanese (ja)
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JP2015525040A5 (enExample
JP2015525040A (ja
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マルクシュタイナー、ステファン
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スナップトラック・インコーポレーテッド
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02133—Means for compensation or elimination of undesirable effects of stress
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP2015524779A 2012-08-03 2013-07-31 トポグラフィー構造及びその製造方法 Expired - Fee Related JP6142444B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102012107155.1A DE102012107155B4 (de) 2012-08-03 2012-08-03 Topografische Struktur und Verfahren zu deren Herstellung
DE102012107155.1 2012-08-03
PCT/EP2013/066115 WO2014020077A1 (de) 2012-08-03 2013-07-31 Topografische struktur und verfahren zu deren herstellung

Publications (3)

Publication Number Publication Date
JP2015525040A JP2015525040A (ja) 2015-08-27
JP2015525040A5 JP2015525040A5 (enExample) 2017-04-06
JP6142444B2 true JP6142444B2 (ja) 2017-06-07

Family

ID=48906263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015524779A Expired - Fee Related JP6142444B2 (ja) 2012-08-03 2013-07-31 トポグラフィー構造及びその製造方法

Country Status (4)

Country Link
US (1) US10491189B2 (enExample)
JP (1) JP6142444B2 (enExample)
DE (1) DE102012107155B4 (enExample)
WO (1) WO2014020077A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6260309B2 (ja) * 2014-01-31 2018-01-17 セイコーエプソン株式会社 表示装置
US10003014B2 (en) * 2014-06-20 2018-06-19 International Business Machines Corporation Method of forming an on-pitch self-aligned hard mask for contact to a tunnel junction using ion beam etching
DE102020118371A1 (de) 2020-07-13 2022-01-13 Heraeus Deutschland GmbH & Co. KG Mehrlagige Ringelektrode mit mehreren Öffnungen

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5081559A (en) * 1991-02-28 1992-01-14 Micron Technology, Inc. Enclosed ferroelectric stacked capacitor
US5335138A (en) * 1993-02-12 1994-08-02 Micron Semiconductor, Inc. High dielectric constant capacitor and method of manufacture
US5489548A (en) * 1994-08-01 1996-02-06 Texas Instruments Incorporated Method of forming high-dielectric-constant material electrodes comprising sidewall spacers
JP4820520B2 (ja) * 2000-02-22 2011-11-24 エヌエックスピー ビー ヴィ 担体基板上の音響反射層に音響共振子を備えた圧電フィルタの製造方法
DE10045090A1 (de) 2000-09-12 2002-03-28 Infineon Technologies Ag Akustischer Resonator
DE10200741A1 (de) 2002-01-11 2003-07-24 Infineon Technologies Ag Verfahren zur Herstellung einer topologieoptimierten Elektrode für einen Resonator in Dünnfilmtechnologie
TW540173B (en) * 2002-05-03 2003-07-01 Asia Pacific Microsystems Inc Bulk acoustic device having integrated fine-tuning and trimming devices
US7059711B2 (en) * 2003-02-07 2006-06-13 Canon Kabushiki Kaisha Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head
US6954121B2 (en) * 2003-06-09 2005-10-11 Agilent Technologies, Inc. Method for controlling piezoelectric coupling coefficient in film bulk acoustic resonators and apparatus embodying the method
US6924717B2 (en) * 2003-06-30 2005-08-02 Intel Corporation Tapered electrode in an acoustic resonator
US7358831B2 (en) * 2003-10-30 2008-04-15 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator (FBAR) devices with simplified packaging
JP3945486B2 (ja) * 2004-02-18 2007-07-18 ソニー株式会社 薄膜バルク音響共振子およびその製造方法
JP4373949B2 (ja) * 2004-04-20 2009-11-25 株式会社東芝 薄膜圧電共振器及びその製造方法
DE102004053318A1 (de) * 2004-11-04 2006-05-11 Epcos Ag Mit akustischen Volumenwellen arbeitender Resonator
JP4756461B2 (ja) 2005-10-12 2011-08-24 宇部興産株式会社 窒化アルミニウム薄膜およびそれを用いた圧電薄膜共振子
WO2007119643A1 (ja) * 2006-03-31 2007-10-25 Ube Industries, Ltd. 圧電薄膜共振子、圧電薄膜デバイスおよびその製造方法
JP2007295280A (ja) * 2006-04-25 2007-11-08 Toshiba Corp 電子素子
EP1997635B1 (en) * 2007-05-30 2011-07-27 Océ-Technologies B.V. Piezoelectric actuator and method of producing the same
US7768364B2 (en) * 2008-06-09 2010-08-03 Maxim Integrated Products, Inc. Bulk acoustic resonators with multi-layer electrodes

Also Published As

Publication number Publication date
US20150171822A1 (en) 2015-06-18
WO2014020077A1 (de) 2014-02-06
DE102012107155B4 (de) 2017-07-13
DE102012107155A1 (de) 2014-02-06
US10491189B2 (en) 2019-11-26
JP2015525040A (ja) 2015-08-27

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