JP2012028568A - バリスタ機能付き積層型半導体セラミックコンデンサ - Google Patents
バリスタ機能付き積層型半導体セラミックコンデンサ Download PDFInfo
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- JP2012028568A JP2012028568A JP2010165976A JP2010165976A JP2012028568A JP 2012028568 A JP2012028568 A JP 2012028568A JP 2010165976 A JP2010165976 A JP 2010165976A JP 2010165976 A JP2010165976 A JP 2010165976A JP 2012028568 A JP2012028568 A JP 2012028568A
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- semiconductor ceramic
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- ceramic capacitor
- multilayer semiconductor
- varistor function
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Abstract
【解決手段】半導体セラミック層1a〜1gを形成する半導体セラミックは、SrサイトとTiサイトとの配合モル比mが0.990≦m<1.000であり、La等のドナー元素が結晶粒子中に固溶されると共に、Mn等のアクセプタ元素が、前記Ti元素100モルに対し0.5モル以下(好ましくは0.3〜0.5モル)の範囲で粒界層中に存在し、かつ、結晶粒子の平均粒径が1.5μm以下である。
【選択図】図1
Description
セラミック素原料としてSrCO3、比表面積が30m2/g(平均粒径:約30nm)のTiO2、及びドナー化合物としてのLaCl3、SmCl3、NdCl3、DyCl3を用意した。そして、ドナー元素の含有量がTi元素100モルに対し表1となるように前記ドナー化合物を秤量し、さらにSrサイトとTiサイトとの配合モル比m(=Srサイト/Tiサイト)が表1となるようにSrCO3及びTiO2を秤量した。次いで、これらの秤量物100重量部に対し3重量部のポリカルボン酸アンモニウム塩を分散剤として添加した後、粉砕媒体として直径2mmのPSZボール及び純水と共にボールミルに投入し、該ボールミル内で16時間湿式混合してスラリーを作製した。
次に、試料番号1〜17の各試料を走査型電子顕微鏡(SEM)で観察し、試料表面や破断面のSEM写真を画像解析し、結晶粒子の平均粒径(平均結晶粒径)を求めた。
1a〜1g 半導体セラミック層
2、2a〜2f 内部電極
3a、3b 外部電極
Claims (6)
- SrTiO3系粒界絶縁型の半導体セラミックで形成された複数の半導体セラミック層と複数の内部電極層とが交互に積層されて焼成されてなる積層焼結体と、該積層焼結体の両端部に前記内部電極層と電気的に接続された外部電極とを有するバリスタ機能付き積層型半導体セラミックコンデンサであって、
前記半導体セラミックが、SrサイトとTiサイトとの配合モル比mは0.990≦m<1.000であり、ドナー元素が結晶粒子中に固溶されると共に、アクセプタ元素が、前記Ti元素100モルに対し0.5モル以下(ただし、0モルを含まず。)の範囲で粒界層中に存在し、かつ、結晶粒子の平均粒径が1.5μm以下であることを特徴とするバリスタ機能付き積層型半導体セラミックコンデンサ。 - 前記アクセプタ元素が、前記Ti元素100モルに対し、0.3〜0.5モルの範囲で含有されていることを特徴とする請求項1記載のバリスタ機能付き積層型半導体セラミックコンデンサ。
- 前記アクセプタ元素は、Mn、Co、Ni、及びCrのうちの少なくとも1種の元素を含んでいることを特徴とする請求項1又は請求項2記載のバリスタ機能付き積層型半導体セラミックコンデンサ。
- 前記ドナー元素は、La、Nd、Sm、Dy、Nb、及びTaのうちの少なくとも1種の元素を含んでいることを特徴とする請求項1乃至請求項3のいずれかに記載のバリスタ機能付き積層型半導体セラミックコンデンサ。
- 低融点酸化物が、前記Ti元素100モルに対し0.1モル以下の範囲で含有されていることを特徴とする請求項1乃至請求項4のいずれかに記載のバリスタ機能付き積層型半導体セラミックコンデンサ。
- 前記低融点酸化物は、SiO2であることを特徴とする請求項5記載のバリスタ機能付き積層型半導体セラミックコンデンサ。
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JP2010165976A JP5397341B2 (ja) | 2010-07-23 | 2010-07-23 | バリスタ機能付き積層型半導体セラミックコンデンサ |
US13/187,052 US8654506B2 (en) | 2010-07-23 | 2011-07-20 | Laminate type semiconductor ceramic capacitor with varistor function |
CN2011102052083A CN102347132B (zh) | 2010-07-23 | 2011-07-21 | 带有变阻器功能的层叠型半导体陶瓷电容器 |
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WO2012105436A1 (ja) * | 2011-02-03 | 2012-08-09 | 株式会社 村田製作所 | 半導体セラミックとその製造方法、及びバリスタ機能付き積層型半導体セラミックコンデンサとその製造方法 |
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JP5846398B2 (ja) * | 2011-10-20 | 2016-01-20 | 株式会社村田製作所 | バリスタ機能付き積層型半導体セラミックコンデンサとその製造方法 |
JP2013168526A (ja) * | 2012-02-16 | 2013-08-29 | Taiyo Yuden Co Ltd | 積層型電子部品及びその製造方法 |
DE102013102278A1 (de) * | 2013-03-07 | 2014-09-11 | Epcos Ag | Kondensatoranordnung |
SE1650548A1 (en) * | 2016-04-22 | 2017-10-23 | Fingerprint Cards Ab | Fingerprint sensing system with sensing reference potential providing circuitry |
KR102579634B1 (ko) | 2017-11-10 | 2023-09-18 | 삼성전기주식회사 | 적층형 커패시터 |
DE102019111989B3 (de) | 2019-05-08 | 2020-09-24 | Tdk Electronics Ag | Keramisches Bauelement und Verfahren zur Herstellung des keramischen Bauelements |
JP7115461B2 (ja) * | 2019-12-12 | 2022-08-09 | 株式会社村田製作所 | 積層セラミックコンデンサ |
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