JP2011528849A5 - - Google Patents
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- JP2011528849A5 JP2011528849A5 JP2011518660A JP2011518660A JP2011528849A5 JP 2011528849 A5 JP2011528849 A5 JP 2011528849A5 JP 2011518660 A JP2011518660 A JP 2011518660A JP 2011518660 A JP2011518660 A JP 2011518660A JP 2011528849 A5 JP2011528849 A5 JP 2011528849A5
- Authority
- JP
- Japan
- Prior art keywords
- thermoelectric material
- electrode
- group
- less
- thermoelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000463 material Substances 0.000 claims 30
- -1 chalcogenide compounds Chemical class 0.000 claims 12
- 229910052723 transition metal Inorganic materials 0.000 claims 7
- 150000003624 transition metals Chemical class 0.000 claims 7
- 229910052795 boron group element Inorganic materials 0.000 claims 6
- 239000013078 crystal Substances 0.000 claims 4
- 229910052800 carbon group element Inorganic materials 0.000 claims 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims 3
- 239000000126 substance Substances 0.000 claims 3
- 239000004020 conductor Substances 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 229910052733 gallium Inorganic materials 0.000 claims 2
- 229910052735 hafnium Inorganic materials 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 229910052748 manganese Inorganic materials 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052758 niobium Inorganic materials 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- 229910052727 yttrium Inorganic materials 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20080070167 | 2008-07-18 | ||
| KR10-2008-0070167 | 2008-07-18 | ||
| KR10-2009-0001251 | 2009-01-07 | ||
| KR1020090001251A KR20100009455A (ko) | 2008-07-18 | 2009-01-07 | 열전재료 및 칼코게나이드 화합물 |
| US17821109P | 2009-05-14 | 2009-05-14 | |
| US61/178,211 | 2009-05-14 | ||
| PCT/KR2009/003975 WO2010008247A2 (en) | 2008-07-18 | 2009-07-17 | Thermoelectric materials and Chalcogenide compounds |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011528849A JP2011528849A (ja) | 2011-11-24 |
| JP2011528849A5 true JP2011528849A5 (enExample) | 2012-08-30 |
| JP5480258B2 JP5480258B2 (ja) | 2014-04-23 |
Family
ID=41550877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011518660A Active JP5480258B2 (ja) | 2008-07-18 | 2009-07-17 | 熱電材料およびカルコゲナイド化合物 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8299349B2 (enExample) |
| EP (1) | EP2308109B1 (enExample) |
| JP (1) | JP5480258B2 (enExample) |
| KR (2) | KR20100009455A (enExample) |
| CN (1) | CN102099937B (enExample) |
| WO (1) | WO2010008247A2 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101680763B1 (ko) * | 2010-03-31 | 2016-11-29 | 삼성전자주식회사 | 열전재료, 이를 포함하는 열전모듈과 열전장치 |
| KR101663183B1 (ko) | 2010-08-26 | 2016-10-06 | 삼성전자주식회사 | 열전재료, 이를 포함하는 열전모듈과 열전장치 |
| CN103130200B (zh) * | 2011-11-25 | 2014-11-05 | 中国科学院上海硅酸盐研究所 | 热电材料化合物及其制备方法 |
| KR101982279B1 (ko) * | 2012-04-27 | 2019-08-28 | 삼성전자주식회사 | 고밀도 계면 미스핏 전위를 갖는 열전소재, 및 이를 구비한 열전소자와 열전모듈 |
| KR20130126035A (ko) * | 2012-05-10 | 2013-11-20 | 삼성전자주식회사 | 왜곡된 전자 상태 밀도를 갖는 열전소재, 이를 포함하는 열전모듈과 열전 장치 |
| KR102094995B1 (ko) * | 2012-10-08 | 2020-03-31 | 삼성전자주식회사 | 열전모듈, 이를 구비한 열전장치, 및 열전모듈의 제조방법 |
| CN103022336B (zh) * | 2012-12-14 | 2015-07-15 | 中国科学院福建物质结构研究所 | 双掺杂In4Se3基热电材料及其制备和用途 |
| CN103107278B (zh) * | 2012-12-14 | 2018-09-28 | 中国科学院福建物质结构研究所 | Pb掺杂In4Se3热电材料及其制备方法 |
| KR102097064B1 (ko) | 2013-05-28 | 2020-04-03 | 삼성전자주식회사 | 복합열전재료, 이를 포함하는 열전소자 및 열전장치, 및 이의 제조방법 |
| CN104211024B (zh) * | 2013-06-04 | 2016-02-10 | 中国科学院上海硅酸盐研究所 | P型可逆相变高性能热电材料及其制备方法 |
| KR101624310B1 (ko) | 2013-10-17 | 2016-05-25 | 주식회사 엘지화학 | 열전 재료 및 그 제조 방법 |
| WO2015057000A1 (ko) * | 2013-10-17 | 2015-04-23 | 주식회사 엘지화학 | 열전 재료 및 그 제조 방법 |
| CN103864026B (zh) * | 2014-02-19 | 2016-06-29 | 宁波工程学院 | Cu-In-Zn-Te四元p-型热电半导体及其制备工艺 |
| CN104167486B (zh) * | 2014-07-23 | 2016-08-24 | 宁波工程学院 | 一种n-型中高温赝两元热电合金及其制备工艺 |
| KR102151240B1 (ko) * | 2014-08-01 | 2020-09-03 | 에스케이이노베이션 주식회사 | 열전재료, 이를 포함하는 열전모듈 및 열전장치 |
| DE102015102763A1 (de) * | 2015-02-26 | 2016-09-01 | Vacuumschmelze Gmbh & Co. Kg | Verfahren zum Herstellen eines thermoelektrischen Gegenstands für eine thermoelektrische Umwandlungsvorrichtung |
| KR102269412B1 (ko) * | 2015-06-09 | 2021-06-24 | 한국전기연구원 | 도핑재를 첨가하여 열전성능이 향상된 열전소재 |
| KR101997203B1 (ko) * | 2015-07-21 | 2019-07-05 | 주식회사 엘지화학 | 화합물 반도체 열전 재료 및 그 제조방법 |
| CN105750557B (zh) * | 2016-03-03 | 2018-12-07 | 宁波工程学院 | n-型In6Se7基热电半导体的制备工艺 |
| US10889887B2 (en) | 2016-08-22 | 2021-01-12 | Honeywell International Inc. | Chalcogenide sputtering target and method of making the same |
| JP6893344B2 (ja) * | 2016-10-18 | 2021-06-23 | 国立研究開発法人物質・材料研究機構 | 銅ガリウムテルル系ｐ型熱電半導体、及びそれを用いた熱電発電素子 |
| KR102121434B1 (ko) | 2017-05-15 | 2020-06-10 | 주식회사 엘지화학 | 칼코겐 화합물, 이의 제조 방법, 및 이를 포함하는 열전소자 |
| KR102348829B1 (ko) * | 2017-11-01 | 2022-01-06 | 한국전기연구원 | 테이프 캐스팅 공정을 이용한 결정배향된 칼코게나이드계 열전소재 및 이의 제조방법 |
| CN107946449A (zh) * | 2017-11-28 | 2018-04-20 | 深圳大学 | NbFeSb基高熵热电材料及其制备方法与热电器件 |
| KR102573731B1 (ko) * | 2018-08-24 | 2023-08-31 | 주식회사 엘지화학 | 칼코겐 화합물, 이의 제조 방법, 및 이를 포함하는 열전소자 |
| CN110108930A (zh) * | 2019-05-23 | 2019-08-09 | 深港产学研基地（北京大学香港科技大学深圳研修院） | 基于悬浮低维热电材料的微纳微波功率传感器及测量方法 |
| CN114436639A (zh) * | 2020-11-04 | 2022-05-06 | 天津理工大学 | 一种具有高热电性能ZnO基热电陶瓷及其制备方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3129117A (en) * | 1960-08-12 | 1964-04-14 | Westinghouse Electric Corp | Thermoelectric materials and their production by powdered metallurgy techniques |
| US3208022A (en) * | 1963-12-23 | 1965-09-21 | Texas Instruments Inc | High performance photoresistor |
| US4589918A (en) | 1984-03-28 | 1986-05-20 | National Research Institute For Metals | Thermal shock resistant thermoelectric material |
| US5875098A (en) * | 1995-04-06 | 1999-02-23 | Hi-Z Corporation | Thermoelectric module with gapless eggcrate |
| JP3144328B2 (ja) | 1996-12-24 | 2001-03-12 | 松下電工株式会社 | 熱電変換素子およびその製造方法 |
| JPH10227020A (ja) | 1997-02-14 | 1998-08-25 | Mitsubishi Heavy Ind Ltd | 浮消波堤 |
| JPH1168173A (ja) * | 1997-08-08 | 1999-03-09 | Komatsu Ltd | 熱電モジュールを用いた熱交換器 |
| JP3484960B2 (ja) | 1997-12-22 | 2004-01-06 | 松下電工株式会社 | 熱電変換素子及び熱電変換素子の製造方法 |
| US6169245B1 (en) | 1998-05-05 | 2001-01-02 | Marlow Industries, Inc. | Thermoelectric materials ternary penta telluride and selenide compounds |
| JP3460807B2 (ja) | 1999-09-17 | 2003-10-27 | 日本電気株式会社 | 熱電変換材料及びそれを用いた素子、並びに熱電変換材料の製造方法 |
| JP4459400B2 (ja) | 2000-07-13 | 2010-04-28 | 旭化成株式会社 | 熱電材料およびその製造方法 |
| JP3594008B2 (ja) * | 2000-11-30 | 2004-11-24 | ヤマハ株式会社 | 熱電材料、その製造方法及びペルチェモジュール |
| US6384312B1 (en) * | 2000-12-07 | 2002-05-07 | International Business Machines Corporation | Thermoelectric coolers with enhanced structured interfaces |
| JP2002270907A (ja) | 2001-03-06 | 2002-09-20 | Nec Corp | 熱電変換材料とそれを用いた素子 |
| JP2004040068A (ja) | 2001-08-31 | 2004-02-05 | Basf Ag | 熱電活性材料ならびにこれを含む熱変換器およびペルチェ装置 |
| JP4221496B2 (ja) | 2003-03-26 | 2009-02-12 | 独立行政法人産業技術総合研究所 | ｎ型熱電特性を有する複合酸化物 |
| JP4286053B2 (ja) * | 2003-05-08 | 2009-06-24 | 株式会社Ｉｈｉ | 熱電半導体材料、該熱電半導体材料による熱電半導体素子、該熱電半導体素子を用いた熱電モジュール及びこれらの製造方法 |
| JP4341440B2 (ja) | 2003-05-21 | 2009-10-07 | 宇部興産株式会社 | 熱電変換材料 |
| WO2005112140A2 (en) * | 2004-04-12 | 2005-11-24 | The Board Of Governors For Higher Education, State Of Rhode Island And Providence Plantations | Thin film ceramic thermocouples |
| JP4373296B2 (ja) | 2004-07-26 | 2009-11-25 | 東洋鋼鈑株式会社 | 熱電変換材料用原料、熱電変換材料の製造方法、および熱電変換材料 |
| WO2006082926A1 (ja) * | 2005-02-04 | 2006-08-10 | Osaka University | タリウム化合物熱電変換材料とその製造方法 |
| JP4854215B2 (ja) | 2005-04-26 | 2012-01-18 | 旭化成株式会社 | 熱電材料とその製造方法 |
| CN100384739C (zh) * | 2006-05-23 | 2008-04-30 | 南开大学 | ZnIn2S4纳米材料及其合成方法和应用 |
-
2009
- 2009-01-07 KR KR1020090001251A patent/KR20100009455A/ko active Pending
- 2009-07-17 EP EP09798150.0A patent/EP2308109B1/en active Active
- 2009-07-17 JP JP2011518660A patent/JP5480258B2/ja active Active
- 2009-07-17 CN CN200980128068.5A patent/CN102099937B/zh active Active
- 2009-07-17 WO PCT/KR2009/003975 patent/WO2010008247A2/en not_active Ceased
- 2009-07-20 KR KR1020090065998A patent/KR101616109B1/ko not_active Expired - Fee Related
- 2009-07-20 US US12/505,841 patent/US8299349B2/en active Active
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