JP2011526876A5 - - Google Patents

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Publication number
JP2011526876A5
JP2011526876A5 JP2011516769A JP2011516769A JP2011526876A5 JP 2011526876 A5 JP2011526876 A5 JP 2011526876A5 JP 2011516769 A JP2011516769 A JP 2011516769A JP 2011516769 A JP2011516769 A JP 2011516769A JP 2011526876 A5 JP2011526876 A5 JP 2011526876A5
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JP
Japan
Prior art keywords
magnetic field
melt
solid interface
ingot
coils
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Pending
Application number
JP2011516769A
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English (en)
Japanese (ja)
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JP2011526876A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/US2009/049069 external-priority patent/WO2010002795A1/en
Publication of JP2011526876A publication Critical patent/JP2011526876A/ja
Publication of JP2011526876A5 publication Critical patent/JP2011526876A5/ja
Pending legal-status Critical Current

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JP2011516769A 2008-06-30 2009-06-29 アンバランス磁場及び同方向回転を用いた成長シリコン結晶の融液−固体界面形状の制御方法 Pending JP2011526876A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US7708208P 2008-06-30 2008-06-30
US61/077,082 2008-06-30
PCT/US2009/049069 WO2010002795A1 (en) 2008-06-30 2009-06-29 Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation

Publications (2)

Publication Number Publication Date
JP2011526876A JP2011526876A (ja) 2011-10-20
JP2011526876A5 true JP2011526876A5 (https=) 2012-08-09

Family

ID=40886307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011516769A Pending JP2011526876A (ja) 2008-06-30 2009-06-29 アンバランス磁場及び同方向回転を用いた成長シリコン結晶の融液−固体界面形状の制御方法

Country Status (8)

Country Link
US (1) US8398765B2 (https=)
EP (1) EP2318574A1 (https=)
JP (1) JP2011526876A (https=)
KR (1) KR20110037985A (https=)
CN (1) CN102076890A (https=)
MY (1) MY150565A (https=)
TW (1) TW201005134A (https=)
WO (1) WO2010002795A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7959732B1 (en) * 2005-06-17 2011-06-14 Saint-Gobain Ceramics & Plastics, Inc. Apparatus and method for monitoring and controlling crystal growth
KR101285935B1 (ko) 2011-01-19 2013-07-12 주식회사 엘지실트론 저항 가열 사파이어 단결정 잉곳 성장장치, 저항 가열 사파이어 단결정 잉곳 제조방법, 사파이어 단결정 잉곳 및 사파이어 웨이퍼
JP5782323B2 (ja) * 2011-07-22 2015-09-24 グローバルウェーハズ・ジャパン株式会社 単結晶引上方法
WO2013087199A1 (en) 2011-12-16 2013-06-20 Saudi Basic Industries Corporation (Sabic) Process for synthesizing a new catalyst complex for the production of polyethylene terephthlate
KR101680213B1 (ko) * 2015-04-06 2016-11-28 주식회사 엘지실트론 실리콘 단결정 잉곳의 성장 방법
US10415149B2 (en) * 2017-03-31 2019-09-17 Silfex, Inc. Growth of a shaped silicon ingot by feeding liquid onto a shaped ingot
WO2018198606A1 (ja) * 2017-04-25 2018-11-01 株式会社Sumco ｎ型シリコン単結晶の製造方法、ｎ型シリコン単結晶のインゴット、シリコンウェーハ、およびエピタキシャルシリコンウェーハ
CN109811403A (zh) * 2017-11-22 2019-05-28 上海新昇半导体科技有限公司 一种拉晶系统和拉晶方法
CN112095154B (zh) * 2019-06-18 2021-05-14 上海新昇半导体科技有限公司 一种半导体晶体生长装置
US11873574B2 (en) * 2019-12-13 2024-01-16 Globalwafers Co., Ltd. Systems and methods for production of silicon using a horizontal magnetic field
CN113046833A (zh) * 2019-12-27 2021-06-29 上海新昇半导体科技有限公司 一种半导体晶体生长装置
CN114130993A (zh) * 2021-11-29 2022-03-04 上海大学 一种控制单晶高温合金铸件中缺陷的方法、其应用和熔铸装置
US12486594B2 (en) 2022-08-29 2025-12-02 Globalwafers Co., Ltd. Ingot puller apparatus that axially position magnetic poles
US12486593B2 (en) 2022-08-29 2025-12-02 Globalwafers Co., Ltd. Axial positioning of magnetic poles while producing a silicon ingot

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19529481A1 (de) 1995-08-10 1997-02-13 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung von Einkristallen
JPH10114597A (ja) * 1996-08-20 1998-05-06 Komatsu Electron Metals Co Ltd 単結晶シリコンの製造方法およびその装置
JP2000044387A (ja) * 1998-07-27 2000-02-15 Nippon Steel Corp シリコン単結晶製造方法
JP3783495B2 (ja) * 1999-11-30 2006-06-07 株式会社Ｓｕｍｃｏ 高品質シリコン単結晶の製造方法
JP2003055092A (ja) * 2001-08-16 2003-02-26 Sumitomo Mitsubishi Silicon Corp シリコン単結晶の引上げ方法
US7223304B2 (en) 2004-12-30 2007-05-29 Memc Electronic Materials, Inc. Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
US7291221B2 (en) 2004-12-30 2007-11-06 Memc Electronic Materials, Inc. Electromagnetic pumping of liquid silicon in a crystal growing process
JP2007031274A (ja) 2005-07-27 2007-02-08 Siltron Inc シリコン単結晶インゴット、ウエハ、その成長装置、及びその成長方法
JP2007284260A (ja) * 2006-04-12 2007-11-01 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶の製造方法

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