TW201005134A - Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation - Google Patents
Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation Download PDFInfo
- Publication number
- TW201005134A TW201005134A TW098122118A TW98122118A TW201005134A TW 201005134 A TW201005134 A TW 201005134A TW 098122118 A TW098122118 A TW 098122118A TW 98122118 A TW98122118 A TW 98122118A TW 201005134 A TW201005134 A TW 201005134A
- Authority
- TW
- Taiwan
- Prior art keywords
- magnetic field
- melt
- crystal
- solid interface
- ingot
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 143
- 239000007787 solid Substances 0.000 title claims abstract description 73
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052710 silicon Inorganic materials 0.000 title abstract 2
- 239000010703 silicon Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 claims abstract description 61
- 239000000155 melt Substances 0.000 claims abstract description 48
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 230000008569 process Effects 0.000 claims description 38
- 230000007547 defect Effects 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 11
- 230000007704 transition Effects 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000007670 refining Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 238000004140 cleaning Methods 0.000 claims 1
- 230000007774 longterm Effects 0.000 claims 1
- 230000001737 promoting effect Effects 0.000 claims 1
- 239000011034 rock crystal Substances 0.000 claims 1
- 238000002231 Czochralski process Methods 0.000 abstract 1
- 238000004088 simulation Methods 0.000 description 18
- 238000010586 diagram Methods 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 11
- 229910052732 germanium Inorganic materials 0.000 description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- 239000000498 cooling water Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000033001 locomotion Effects 0.000 description 3
- WMFYOYKPJLRMJI-UHFFFAOYSA-N Lercanidipine hydrochloride Chemical compound Cl.COC(=O)C1=C(C)NC(C)=C(C(=O)OC(C)(C)CN(C)CCC(C=2C=CC=CC=2)C=2C=CC=CC=2)C1C1=CC=CC([N+]([O-])=O)=C1 WMFYOYKPJLRMJI-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000004313 glare Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 241000272168 Laridae Species 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 230000003187 abdominal effect Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009643 growth defect Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- MJIHNNLFOKEZEW-UHFFFAOYSA-N lansoprazole Chemical compound CC1=C(OCC(F)(F)F)C=CN=C1CS(=O)C1=NC2=CC=CC=C2N1 MJIHNNLFOKEZEW-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7708208P | 2008-06-30 | 2008-06-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201005134A true TW201005134A (en) | 2010-02-01 |
Family
ID=40886307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098122118A TW201005134A (en) | 2008-06-30 | 2009-06-30 | Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8398765B2 (https=) |
| EP (1) | EP2318574A1 (https=) |
| JP (1) | JP2011526876A (https=) |
| KR (1) | KR20110037985A (https=) |
| CN (1) | CN102076890A (https=) |
| MY (1) | MY150565A (https=) |
| TW (1) | TW201005134A (https=) |
| WO (1) | WO2010002795A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI751726B (zh) * | 2019-12-27 | 2022-01-01 | 大陸商上海新昇半導體科技有限公司 | 一種半導體晶體生長裝置 |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7959732B1 (en) * | 2005-06-17 | 2011-06-14 | Saint-Gobain Ceramics & Plastics, Inc. | Apparatus and method for monitoring and controlling crystal growth |
| KR101285935B1 (ko) | 2011-01-19 | 2013-07-12 | 주식회사 엘지실트론 | 저항 가열 사파이어 단결정 잉곳 성장장치, 저항 가열 사파이어 단결정 잉곳 제조방법, 사파이어 단결정 잉곳 및 사파이어 웨이퍼 |
| JP5782323B2 (ja) * | 2011-07-22 | 2015-09-24 | グローバルウェーハズ・ジャパン株式会社 | 単結晶引上方法 |
| WO2013087199A1 (en) | 2011-12-16 | 2013-06-20 | Saudi Basic Industries Corporation (Sabic) | Process for synthesizing a new catalyst complex for the production of polyethylene terephthlate |
| KR101680213B1 (ko) * | 2015-04-06 | 2016-11-28 | 주식회사 엘지실트론 | 실리콘 단결정 잉곳의 성장 방법 |
| US10415149B2 (en) * | 2017-03-31 | 2019-09-17 | Silfex, Inc. | Growth of a shaped silicon ingot by feeding liquid onto a shaped ingot |
| WO2018198606A1 (ja) * | 2017-04-25 | 2018-11-01 | 株式会社Sumco | ｎ型シリコン単結晶の製造方法、ｎ型シリコン単結晶のインゴット、シリコンウェーハ、およびエピタキシャルシリコンウェーハ |
| CN109811403A (zh) * | 2017-11-22 | 2019-05-28 | 上海新昇半导体科技有限公司 | 一种拉晶系统和拉晶方法 |
| CN112095154B (zh) * | 2019-06-18 | 2021-05-14 | 上海新昇半导体科技有限公司 | 一种半导体晶体生长装置 |
| US11873574B2 (en) * | 2019-12-13 | 2024-01-16 | Globalwafers Co., Ltd. | Systems and methods for production of silicon using a horizontal magnetic field |
| CN114130993A (zh) * | 2021-11-29 | 2022-03-04 | 上海大学 | 一种控制单晶高温合金铸件中缺陷的方法、其应用和熔铸装置 |
| US12486594B2 (en) | 2022-08-29 | 2025-12-02 | Globalwafers Co., Ltd. | Ingot puller apparatus that axially position magnetic poles |
| US12486593B2 (en) | 2022-08-29 | 2025-12-02 | Globalwafers Co., Ltd. | Axial positioning of magnetic poles while producing a silicon ingot |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19529481A1 (de) | 1995-08-10 | 1997-02-13 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zur Herstellung von Einkristallen |
| JPH10114597A (ja) * | 1996-08-20 | 1998-05-06 | Komatsu Electron Metals Co Ltd | 単結晶シリコンの製造方法およびその装置 |
| JP2000044387A (ja) * | 1998-07-27 | 2000-02-15 | Nippon Steel Corp | シリコン単結晶製造方法 |
| JP3783495B2 (ja) * | 1999-11-30 | 2006-06-07 | 株式会社Ｓｕｍｃｏ | 高品質シリコン単結晶の製造方法 |
| JP2003055092A (ja) * | 2001-08-16 | 2003-02-26 | Sumitomo Mitsubishi Silicon Corp | シリコン単結晶の引上げ方法 |
| US7223304B2 (en) | 2004-12-30 | 2007-05-29 | Memc Electronic Materials, Inc. | Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field |
| US7291221B2 (en) | 2004-12-30 | 2007-11-06 | Memc Electronic Materials, Inc. | Electromagnetic pumping of liquid silicon in a crystal growing process |
| JP2007031274A (ja) | 2005-07-27 | 2007-02-08 | Siltron Inc | シリコン単結晶インゴット、ウエハ、その成長装置、及びその成長方法 |
| JP2007284260A (ja) * | 2006-04-12 | 2007-11-01 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | シリコン単結晶の製造方法 |
-
2009
- 2009-06-29 JP JP2011516769A patent/JP2011526876A/ja active Pending
- 2009-06-29 US US12/493,766 patent/US8398765B2/en active Active
- 2009-06-29 EP EP09774246A patent/EP2318574A1/en not_active Ceased
- 2009-06-29 KR KR1020107029635A patent/KR20110037985A/ko not_active Ceased
- 2009-06-29 MY MYPI20105394 patent/MY150565A/en unknown
- 2009-06-29 CN CN2009801253194A patent/CN102076890A/zh active Pending
- 2009-06-29 WO PCT/US2009/049069 patent/WO2010002795A1/en not_active Ceased
- 2009-06-30 TW TW098122118A patent/TW201005134A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI751726B (zh) * | 2019-12-27 | 2022-01-01 | 大陸商上海新昇半導體科技有限公司 | 一種半導體晶體生長裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20090320743A1 (en) | 2009-12-31 |
| JP2011526876A (ja) | 2011-10-20 |
| WO2010002795A1 (en) | 2010-01-07 |
| US8398765B2 (en) | 2013-03-19 |
| MY150565A (en) | 2014-01-30 |
| CN102076890A (zh) | 2011-05-25 |
| EP2318574A1 (en) | 2011-05-11 |
| KR20110037985A (ko) | 2011-04-13 |
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