KR20110037985A - 불균형 자계 및 등방-회전을 이용하여 성장하는 실리콘 결정의 용융물-고체 계면 형상을 조절하는 방법 및 시스템 - Google Patents

불균형 자계 및 등방-회전을 이용하여 성장하는 실리콘 결정의 용융물-고체 계면 형상을 조절하는 방법 및 시스템

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Publication number
KR20110037985A
KR20110037985A KR1020107029635A KR20107029635A KR20110037985A KR 20110037985 A KR20110037985 A KR 20110037985A KR 1020107029635 A KR1020107029635 A KR 1020107029635A KR 20107029635 A KR20107029635 A KR 20107029635A KR 20110037985 A KR20110037985 A KR 20110037985A
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KR
South Korea
Prior art keywords
magnetic field
melt
solid interface
crystal growth
ingot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020107029635A
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English (en)
Korean (ko)
Inventor
해리프래새드 스리다라머티
밀린드 에스. 쿨카니
리차드 지. 슈렌커
조셉 씨. 홀저
해롤드 더블유. 코브
Original Assignee
엠이엠씨 일렉트로닉 머티리얼즈, 인크.
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Application filed by 엠이엠씨 일렉트로닉 머티리얼즈, 인크. filed Critical 엠이엠씨 일렉트로닉 머티리얼즈, 인크.
Publication of KR20110037985A publication Critical patent/KR20110037985A/ko
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020107029635A 2008-06-30 2009-06-29 불균형 자계 및 등방-회전을 이용하여 성장하는 실리콘 결정의 용융물-고체 계면 형상을 조절하는 방법 및 시스템 Ceased KR20110037985A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7708208P 2008-06-30 2008-06-30
US61/077,082 2008-06-30

Publications (1)

Publication Number Publication Date
KR20110037985A true KR20110037985A (ko) 2011-04-13

Family

ID=40886307

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107029635A Ceased KR20110037985A (ko) 2008-06-30 2009-06-29 불균형 자계 및 등방-회전을 이용하여 성장하는 실리콘 결정의 용융물-고체 계면 형상을 조절하는 방법 및 시스템

Country Status (8)

Country Link
US (1) US8398765B2 (https=)
EP (1) EP2318574A1 (https=)
JP (1) JP2011526876A (https=)
KR (1) KR20110037985A (https=)
CN (1) CN102076890A (https=)
MY (1) MY150565A (https=)
TW (1) TW201005134A (https=)
WO (1) WO2010002795A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7959732B1 (en) * 2005-06-17 2011-06-14 Saint-Gobain Ceramics & Plastics, Inc. Apparatus and method for monitoring and controlling crystal growth
KR101285935B1 (ko) 2011-01-19 2013-07-12 주식회사 엘지실트론 저항 가열 사파이어 단결정 잉곳 성장장치, 저항 가열 사파이어 단결정 잉곳 제조방법, 사파이어 단결정 잉곳 및 사파이어 웨이퍼
JP5782323B2 (ja) * 2011-07-22 2015-09-24 グローバルウェーハズ・ジャパン株式会社 単結晶引上方法
WO2013087199A1 (en) 2011-12-16 2013-06-20 Saudi Basic Industries Corporation (Sabic) Process for synthesizing a new catalyst complex for the production of polyethylene terephthlate
KR101680213B1 (ko) * 2015-04-06 2016-11-28 주식회사 엘지실트론 실리콘 단결정 잉곳의 성장 방법
US10415149B2 (en) * 2017-03-31 2019-09-17 Silfex, Inc. Growth of a shaped silicon ingot by feeding liquid onto a shaped ingot
WO2018198606A1 (ja) * 2017-04-25 2018-11-01 株式会社Sumco ｎ型シリコン単結晶の製造方法、ｎ型シリコン単結晶のインゴット、シリコンウェーハ、およびエピタキシャルシリコンウェーハ
CN109811403A (zh) * 2017-11-22 2019-05-28 上海新昇半导体科技有限公司 一种拉晶系统和拉晶方法
CN112095154B (zh) * 2019-06-18 2021-05-14 上海新昇半导体科技有限公司 一种半导体晶体生长装置
US11873574B2 (en) * 2019-12-13 2024-01-16 Globalwafers Co., Ltd. Systems and methods for production of silicon using a horizontal magnetic field
CN113046833A (zh) * 2019-12-27 2021-06-29 上海新昇半导体科技有限公司 一种半导体晶体生长装置
CN114130993A (zh) * 2021-11-29 2022-03-04 上海大学 一种控制单晶高温合金铸件中缺陷的方法、其应用和熔铸装置
US12486594B2 (en) 2022-08-29 2025-12-02 Globalwafers Co., Ltd. Ingot puller apparatus that axially position magnetic poles
US12486593B2 (en) 2022-08-29 2025-12-02 Globalwafers Co., Ltd. Axial positioning of magnetic poles while producing a silicon ingot

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19529481A1 (de) 1995-08-10 1997-02-13 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung von Einkristallen
JPH10114597A (ja) * 1996-08-20 1998-05-06 Komatsu Electron Metals Co Ltd 単結晶シリコンの製造方法およびその装置
JP2000044387A (ja) * 1998-07-27 2000-02-15 Nippon Steel Corp シリコン単結晶製造方法
JP3783495B2 (ja) * 1999-11-30 2006-06-07 株式会社Ｓｕｍｃｏ 高品質シリコン単結晶の製造方法
JP2003055092A (ja) * 2001-08-16 2003-02-26 Sumitomo Mitsubishi Silicon Corp シリコン単結晶の引上げ方法
US7223304B2 (en) 2004-12-30 2007-05-29 Memc Electronic Materials, Inc. Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
US7291221B2 (en) 2004-12-30 2007-11-06 Memc Electronic Materials, Inc. Electromagnetic pumping of liquid silicon in a crystal growing process
JP2007031274A (ja) 2005-07-27 2007-02-08 Siltron Inc シリコン単結晶インゴット、ウエハ、その成長装置、及びその成長方法
JP2007284260A (ja) * 2006-04-12 2007-11-01 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶の製造方法

Also Published As

Publication number Publication date
US20090320743A1 (en) 2009-12-31
JP2011526876A (ja) 2011-10-20
WO2010002795A1 (en) 2010-01-07
TW201005134A (en) 2010-02-01
US8398765B2 (en) 2013-03-19
MY150565A (en) 2014-01-30
CN102076890A (zh) 2011-05-25
EP2318574A1 (en) 2011-05-11

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