CN102076890A - 使用不平衡的磁场和共转来控制生长硅晶体的熔体-固体界面形状 - Google Patents

使用不平衡的磁场和共转来控制生长硅晶体的熔体-固体界面形状 Download PDF

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Publication number
CN102076890A
CN102076890A CN2009801253194A CN200980125319A CN102076890A CN 102076890 A CN102076890 A CN 102076890A CN 2009801253194 A CN2009801253194 A CN 2009801253194A CN 200980125319 A CN200980125319 A CN 200980125319A CN 102076890 A CN102076890 A CN 102076890A
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CN
China
Prior art keywords
magnetic field
melt
solid interface
crystal
ingot
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Pending
Application number
CN2009801253194A
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English (en)
Chinese (zh)
Inventor
H·斯里德哈拉默西
M·S·库尔卡尼
R·G·施伦克
J·C·侯泽
H·W·科布
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SunEdison Inc
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SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of CN102076890A publication Critical patent/CN102076890A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN2009801253194A 2008-06-30 2009-06-29 使用不平衡的磁场和共转来控制生长硅晶体的熔体-固体界面形状 Pending CN102076890A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US7708208P 2008-06-30 2008-06-30
US61/077,082 2008-06-30
PCT/US2009/049069 WO2010002795A1 (en) 2008-06-30 2009-06-29 Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation

Publications (1)

Publication Number Publication Date
CN102076890A true CN102076890A (zh) 2011-05-25

Family

ID=40886307

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801253194A Pending CN102076890A (zh) 2008-06-30 2009-06-29 使用不平衡的磁场和共转来控制生长硅晶体的熔体-固体界面形状

Country Status (8)

Country Link
US (1) US8398765B2 (https=)
EP (1) EP2318574A1 (https=)
JP (1) JP2011526876A (https=)
KR (1) KR20110037985A (https=)
CN (1) CN102076890A (https=)
MY (1) MY150565A (https=)
TW (1) TW201005134A (https=)
WO (1) WO2010002795A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107407003A (zh) * 2015-04-06 2017-11-28 Lg矽得荣株式会社 用于生长单晶硅锭的装置和方法
CN108691010A (zh) * 2017-03-31 2018-10-23 希尔福克斯有限公司 通过将液体进给到成形的锭上生长成形的硅锭
CN109811403A (zh) * 2017-11-22 2019-05-28 上海新昇半导体科技有限公司 一种拉晶系统和拉晶方法
CN110753764A (zh) * 2017-04-25 2020-02-04 胜高股份有限公司 n型单晶硅的制造方法、n型单晶硅的锭、硅晶片及外延硅晶片
CN114130993A (zh) * 2021-11-29 2022-03-04 上海大学 一种控制单晶高温合金铸件中缺陷的方法、其应用和熔铸装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7959732B1 (en) * 2005-06-17 2011-06-14 Saint-Gobain Ceramics & Plastics, Inc. Apparatus and method for monitoring and controlling crystal growth
KR101285935B1 (ko) 2011-01-19 2013-07-12 주식회사 엘지실트론 저항 가열 사파이어 단결정 잉곳 성장장치, 저항 가열 사파이어 단결정 잉곳 제조방법, 사파이어 단결정 잉곳 및 사파이어 웨이퍼
JP5782323B2 (ja) * 2011-07-22 2015-09-24 グローバルウェーハズ・ジャパン株式会社 単結晶引上方法
WO2013087199A1 (en) 2011-12-16 2013-06-20 Saudi Basic Industries Corporation (Sabic) Process for synthesizing a new catalyst complex for the production of polyethylene terephthlate
CN112095154B (zh) * 2019-06-18 2021-05-14 上海新昇半导体科技有限公司 一种半导体晶体生长装置
US11873574B2 (en) * 2019-12-13 2024-01-16 Globalwafers Co., Ltd. Systems and methods for production of silicon using a horizontal magnetic field
CN113046833A (zh) * 2019-12-27 2021-06-29 上海新昇半导体科技有限公司 一种半导体晶体生长装置
US12486594B2 (en) 2022-08-29 2025-12-02 Globalwafers Co., Ltd. Ingot puller apparatus that axially position magnetic poles
US12486593B2 (en) 2022-08-29 2025-12-02 Globalwafers Co., Ltd. Axial positioning of magnetic poles while producing a silicon ingot

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19529481A1 (de) 1995-08-10 1997-02-13 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung von Einkristallen
JPH10114597A (ja) * 1996-08-20 1998-05-06 Komatsu Electron Metals Co Ltd 単結晶シリコンの製造方法およびその装置
JP2000044387A (ja) * 1998-07-27 2000-02-15 Nippon Steel Corp シリコン単結晶製造方法
JP3783495B2 (ja) * 1999-11-30 2006-06-07 株式会社Ｓｕｍｃｏ 高品質シリコン単結晶の製造方法
JP2003055092A (ja) * 2001-08-16 2003-02-26 Sumitomo Mitsubishi Silicon Corp シリコン単結晶の引上げ方法
US7223304B2 (en) 2004-12-30 2007-05-29 Memc Electronic Materials, Inc. Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
US7291221B2 (en) 2004-12-30 2007-11-06 Memc Electronic Materials, Inc. Electromagnetic pumping of liquid silicon in a crystal growing process
JP2007031274A (ja) 2005-07-27 2007-02-08 Siltron Inc シリコン単結晶インゴット、ウエハ、その成長装置、及びその成長方法
JP2007284260A (ja) * 2006-04-12 2007-11-01 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶の製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107407003A (zh) * 2015-04-06 2017-11-28 Lg矽得荣株式会社 用于生长单晶硅锭的装置和方法
CN108691010A (zh) * 2017-03-31 2018-10-23 希尔福克斯有限公司 通过将液体进给到成形的锭上生长成形的硅锭
CN108691010B (zh) * 2017-03-31 2021-11-23 希尔福克斯有限公司 铸造锭的系统和方法
CN110753764A (zh) * 2017-04-25 2020-02-04 胜高股份有限公司 n型单晶硅的制造方法、n型单晶硅的锭、硅晶片及外延硅晶片
CN114606567A (zh) * 2017-04-25 2022-06-10 胜高股份有限公司 n型单晶硅的制造方法、n型单晶硅的锭、硅晶片及外延硅晶片
US11702760B2 (en) 2017-04-25 2023-07-18 Sumco Corporation N-type silicon single crystal production method, n-type silicon single crystal ingot, silicon wafer, and epitaxial silicon wafer
CN114606567B (zh) * 2017-04-25 2024-10-01 胜高股份有限公司 n型单晶硅的制造方法、n型单晶硅的锭、硅晶片及外延硅晶片
US12252803B2 (en) 2017-04-25 2025-03-18 Sumco Corporation N-type silicon single crystal production method, n-type silicon single crystal ingot, silicon wafer, and epitaxial silicon wafer
CN109811403A (zh) * 2017-11-22 2019-05-28 上海新昇半导体科技有限公司 一种拉晶系统和拉晶方法
CN114130993A (zh) * 2021-11-29 2022-03-04 上海大学 一种控制单晶高温合金铸件中缺陷的方法、其应用和熔铸装置

Also Published As

Publication number Publication date
US20090320743A1 (en) 2009-12-31
JP2011526876A (ja) 2011-10-20
WO2010002795A1 (en) 2010-01-07
TW201005134A (en) 2010-02-01
US8398765B2 (en) 2013-03-19
MY150565A (en) 2014-01-30
EP2318574A1 (en) 2011-05-11
KR20110037985A (ko) 2011-04-13

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Application publication date: 20110525