JP2011530474A5 - - Google Patents
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- Publication number
- JP2011530474A5 JP2011530474A5 JP2011522248A JP2011522248A JP2011530474A5 JP 2011530474 A5 JP2011530474 A5 JP 2011530474A5 JP 2011522248 A JP2011522248 A JP 2011522248A JP 2011522248 A JP2011522248 A JP 2011522248A JP 2011530474 A5 JP2011530474 A5 JP 2011530474A5
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- melt
- ingot
- time
- varying magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 21
- 239000004065 semiconductor Substances 0.000 claims 20
- 239000007787 solid Substances 0.000 claims 9
- 238000005086 pumping Methods 0.000 claims 6
- 239000013078 crystal Substances 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 2
- 241000272168 Laridae Species 0.000 claims 1
- 238000005094 computer simulation Methods 0.000 claims 1
- 239000000155 melt Substances 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8711708P | 2008-08-07 | 2008-08-07 | |
| US61/087,117 | 2008-08-07 | ||
| PCT/US2009/053002 WO2010017389A1 (en) | 2008-08-07 | 2009-08-06 | Generating a pumping force in a silicon melt by applying a time-varying magnetic field |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011530474A JP2011530474A (ja) | 2011-12-22 |
| JP2011530474A5 true JP2011530474A5 (https=) | 2012-08-16 |
Family
ID=41036522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011522248A Pending JP2011530474A (ja) | 2008-08-07 | 2009-08-06 | 時間的に変化する磁場の印加による溶融シリコン中でのポンプ力の形成 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8551247B2 (https=) |
| EP (1) | EP2321450B1 (https=) |
| JP (1) | JP2011530474A (https=) |
| KR (1) | KR20110052605A (https=) |
| CN (1) | CN102112665B (https=) |
| TW (1) | TW201012984A (https=) |
| WO (1) | WO2010017389A1 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7959732B1 (en) * | 2005-06-17 | 2011-06-14 | Saint-Gobain Ceramics & Plastics, Inc. | Apparatus and method for monitoring and controlling crystal growth |
| KR101488125B1 (ko) * | 2010-12-27 | 2015-01-29 | 신닛테츠스미킨 카부시키카이샤 | SiC 단결정의 제조 장치 및 SiC 단결정의 제조 방법 |
| CN103060902B (zh) * | 2013-01-10 | 2016-04-27 | 上海大学 | 直接成形制备带硅的方法及硅片直接成形装置 |
| JP6604338B2 (ja) * | 2017-01-05 | 2019-11-13 | 株式会社Sumco | シリコン単結晶の引き上げ条件演算プログラム、シリコン単結晶のホットゾーンの改良方法、およびシリコン単結晶の育成方法 |
| CN110129890B (zh) * | 2018-03-30 | 2021-02-02 | 杭州慧翔电液技术开发有限公司 | 一种用于磁控直拉单晶的线圈结构及磁控直拉单晶的方法 |
| JP2022529451A (ja) * | 2019-04-18 | 2022-06-22 | グローバルウェーハズ カンパニー リミテッド | 連続チョクラルスキー法を用いる単結晶シリコンインゴットの成長方法 |
| US11873574B2 (en) | 2019-12-13 | 2024-01-16 | Globalwafers Co., Ltd. | Systems and methods for production of silicon using a horizontal magnetic field |
| CN111175683B (zh) * | 2020-03-16 | 2024-08-16 | 中国工程物理研究院激光聚变研究中心 | 交直流复合磁场-力-热环境下实验测试系统 |
| JP2023536410A (ja) * | 2020-07-23 | 2023-08-25 | グローバルウェーハズ カンパニー リミテッド | シリコン製造中のシリコン結晶の揺動及び落下を低減するシステム及び方法 |
| CN112195519B (zh) * | 2020-10-10 | 2022-04-22 | 西安交通大学 | 一种适用于晶体生长过程的行波磁场控制方法 |
| CN114908224B (zh) * | 2021-02-08 | 2024-01-16 | 中国航发商用航空发动机有限责任公司 | 材料表面复合强化装置以及方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19529481A1 (de) | 1995-08-10 | 1997-02-13 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zur Herstellung von Einkristallen |
| JP2003055092A (ja) * | 2001-08-16 | 2003-02-26 | Sumitomo Mitsubishi Silicon Corp | シリコン単結晶の引上げ方法 |
| US7223304B2 (en) * | 2004-12-30 | 2007-05-29 | Memc Electronic Materials, Inc. | Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field |
| US7291221B2 (en) * | 2004-12-30 | 2007-11-06 | Memc Electronic Materials, Inc. | Electromagnetic pumping of liquid silicon in a crystal growing process |
| JP2007031274A (ja) * | 2005-07-27 | 2007-02-08 | Siltron Inc | シリコン単結晶インゴット、ウエハ、その成長装置、及びその成長方法 |
-
2009
- 2009-08-06 CN CN2009801296556A patent/CN102112665B/zh not_active Expired - Fee Related
- 2009-08-06 WO PCT/US2009/053002 patent/WO2010017389A1/en not_active Ceased
- 2009-08-06 EP EP09791232A patent/EP2321450B1/en not_active Not-in-force
- 2009-08-06 KR KR1020117002903A patent/KR20110052605A/ko not_active Withdrawn
- 2009-08-06 JP JP2011522248A patent/JP2011530474A/ja active Pending
- 2009-08-06 US US12/537,066 patent/US8551247B2/en active Active
- 2009-08-10 TW TW098126820A patent/TW201012984A/zh unknown
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