KR20110052605A - 시변 자기장의 인가에 의한 실리콘 용융체 내의 펌핑력의 생성 - Google Patents

시변 자기장의 인가에 의한 실리콘 용융체 내의 펌핑력의 생성 Download PDF

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Publication number
KR20110052605A
KR20110052605A KR1020117002903A KR20117002903A KR20110052605A KR 20110052605 A KR20110052605 A KR 20110052605A KR 1020117002903 A KR1020117002903 A KR 1020117002903A KR 20117002903 A KR20117002903 A KR 20117002903A KR 20110052605 A KR20110052605 A KR 20110052605A
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South Korea
Prior art keywords
magnetic field
melt
time
varying magnetic
pumping force
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Korean (ko)
Inventor
해리프래새드 스리다라머티
밀린드 에스. 쿨카니
해롤드 더블유. 코브
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엠이엠씨 일렉트로닉 머티리얼즈, 인크.
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Publication of KR20110052605A publication Critical patent/KR20110052605A/ko
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020117002903A 2008-08-07 2009-08-06 시변 자기장의 인가에 의한 실리콘 용융체 내의 펌핑력의 생성 Withdrawn KR20110052605A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8711708P 2008-08-07 2008-08-07
US61/087,117 2008-08-07

Publications (1)

Publication Number Publication Date
KR20110052605A true KR20110052605A (ko) 2011-05-18

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KR1020117002903A Withdrawn KR20110052605A (ko) 2008-08-07 2009-08-06 시변 자기장의 인가에 의한 실리콘 용융체 내의 펌핑력의 생성

Country Status (7)

Country Link
US (1) US8551247B2 (https=)
EP (1) EP2321450B1 (https=)
JP (1) JP2011530474A (https=)
KR (1) KR20110052605A (https=)
CN (1) CN102112665B (https=)
TW (1) TW201012984A (https=)
WO (1) WO2010017389A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7959732B1 (en) * 2005-06-17 2011-06-14 Saint-Gobain Ceramics & Plastics, Inc. Apparatus and method for monitoring and controlling crystal growth
KR101488125B1 (ko) * 2010-12-27 2015-01-29 신닛테츠스미킨 카부시키카이샤 SiC 단결정의 제조 장치 및 SiC 단결정의 제조 방법
CN103060902B (zh) * 2013-01-10 2016-04-27 上海大学 直接成形制备带硅的方法及硅片直接成形装置
JP6604338B2 (ja) * 2017-01-05 2019-11-13 株式会社Ｓｕｍｃｏ シリコン単結晶の引き上げ条件演算プログラム、シリコン単結晶のホットゾーンの改良方法、およびシリコン単結晶の育成方法
CN110129890B (zh) * 2018-03-30 2021-02-02 杭州慧翔电液技术开发有限公司 一种用于磁控直拉单晶的线圈结构及磁控直拉单晶的方法
JP2022529451A (ja) * 2019-04-18 2022-06-22 グローバルウェーハズ カンパニー リミテッド 連続チョクラルスキー法を用いる単結晶シリコンインゴットの成長方法
US11873574B2 (en) 2019-12-13 2024-01-16 Globalwafers Co., Ltd. Systems and methods for production of silicon using a horizontal magnetic field
CN111175683B (zh) * 2020-03-16 2024-08-16 中国工程物理研究院激光聚变研究中心 交直流复合磁场-力-热环境下实验测试系统
JP2023536410A (ja) * 2020-07-23 2023-08-25 グローバルウェーハズ カンパニー リミテッド シリコン製造中のシリコン結晶の揺動及び落下を低減するシステム及び方法
CN112195519B (zh) * 2020-10-10 2022-04-22 西安交通大学 一种适用于晶体生长过程的行波磁场控制方法
CN114908224B (zh) * 2021-02-08 2024-01-16 中国航发商用航空发动机有限责任公司 材料表面复合强化装置以及方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19529481A1 (de) 1995-08-10 1997-02-13 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung von Einkristallen
JP2003055092A (ja) * 2001-08-16 2003-02-26 Sumitomo Mitsubishi Silicon Corp シリコン単結晶の引上げ方法
US7223304B2 (en) * 2004-12-30 2007-05-29 Memc Electronic Materials, Inc. Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
US7291221B2 (en) * 2004-12-30 2007-11-06 Memc Electronic Materials, Inc. Electromagnetic pumping of liquid silicon in a crystal growing process
JP2007031274A (ja) * 2005-07-27 2007-02-08 Siltron Inc シリコン単結晶インゴット、ウエハ、その成長装置、及びその成長方法

Also Published As

Publication number Publication date
WO2010017389A1 (en) 2010-02-11
US8551247B2 (en) 2013-10-08
TW201012984A (en) 2010-04-01
JP2011530474A (ja) 2011-12-22
EP2321450B1 (en) 2012-10-03
CN102112665A (zh) 2011-06-29
EP2321450A1 (en) 2011-05-18
CN102112665B (zh) 2012-12-12
US20100031870A1 (en) 2010-02-11

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