CN102112665B - 通过施加时变磁场在硅熔体中产生抽吸力 - Google Patents

通过施加时变磁场在硅熔体中产生抽吸力 Download PDF

Info

Publication number
CN102112665B
CN102112665B CN2009801296556A CN200980129655A CN102112665B CN 102112665 B CN102112665 B CN 102112665B CN 2009801296556 A CN2009801296556 A CN 2009801296556A CN 200980129655 A CN200980129655 A CN 200980129655A CN 102112665 B CN102112665 B CN 102112665B
Authority
CN
China
Prior art keywords
melt
magnetic field
time
varying magnetic
suction force
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2009801296556A
Other languages
English (en)
Chinese (zh)
Other versions
CN102112665A (zh
Inventor
H·斯里达哈拉默西
M·S·库尔卡尼
H·W·科布
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of CN102112665A publication Critical patent/CN102112665A/zh
Application granted granted Critical
Publication of CN102112665B publication Critical patent/CN102112665B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN2009801296556A 2008-08-07 2009-08-06 通过施加时变磁场在硅熔体中产生抽吸力 Expired - Fee Related CN102112665B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8711708P 2008-08-07 2008-08-07
US61/087,117 2008-08-07
PCT/US2009/053002 WO2010017389A1 (en) 2008-08-07 2009-08-06 Generating a pumping force in a silicon melt by applying a time-varying magnetic field

Publications (2)

Publication Number Publication Date
CN102112665A CN102112665A (zh) 2011-06-29
CN102112665B true CN102112665B (zh) 2012-12-12

Family

ID=41036522

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801296556A Expired - Fee Related CN102112665B (zh) 2008-08-07 2009-08-06 通过施加时变磁场在硅熔体中产生抽吸力

Country Status (7)

Country Link
US (1) US8551247B2 (https=)
EP (1) EP2321450B1 (https=)
JP (1) JP2011530474A (https=)
KR (1) KR20110052605A (https=)
CN (1) CN102112665B (https=)
TW (1) TW201012984A (https=)
WO (1) WO2010017389A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7959732B1 (en) * 2005-06-17 2011-06-14 Saint-Gobain Ceramics & Plastics, Inc. Apparatus and method for monitoring and controlling crystal growth
KR101488125B1 (ko) * 2010-12-27 2015-01-29 신닛테츠스미킨 카부시키카이샤 SiC 단결정의 제조 장치 및 SiC 단결정의 제조 방법
CN103060902B (zh) * 2013-01-10 2016-04-27 上海大学 直接成形制备带硅的方法及硅片直接成形装置
JP6604338B2 (ja) * 2017-01-05 2019-11-13 株式会社Ｓｕｍｃｏ シリコン単結晶の引き上げ条件演算プログラム、シリコン単結晶のホットゾーンの改良方法、およびシリコン単結晶の育成方法
CN110129890B (zh) * 2018-03-30 2021-02-02 杭州慧翔电液技术开发有限公司 一种用于磁控直拉单晶的线圈结构及磁控直拉单晶的方法
JP2022529451A (ja) * 2019-04-18 2022-06-22 グローバルウェーハズ カンパニー リミテッド 連続チョクラルスキー法を用いる単結晶シリコンインゴットの成長方法
US11873574B2 (en) 2019-12-13 2024-01-16 Globalwafers Co., Ltd. Systems and methods for production of silicon using a horizontal magnetic field
CN111175683B (zh) * 2020-03-16 2024-08-16 中国工程物理研究院激光聚变研究中心 交直流复合磁场-力-热环境下实验测试系统
JP2023536410A (ja) * 2020-07-23 2023-08-25 グローバルウェーハズ カンパニー リミテッド シリコン製造中のシリコン結晶の揺動及び落下を低減するシステム及び方法
CN112195519B (zh) * 2020-10-10 2022-04-22 西安交通大学 一种适用于晶体生长过程的行波磁场控制方法
CN114908224B (zh) * 2021-02-08 2024-01-16 中国航发商用航空发动机有限责任公司 材料表面复合强化装置以及方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19529481A1 (de) * 1995-08-10 1997-02-13 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung von Einkristallen

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003055092A (ja) * 2001-08-16 2003-02-26 Sumitomo Mitsubishi Silicon Corp シリコン単結晶の引上げ方法
US7223304B2 (en) * 2004-12-30 2007-05-29 Memc Electronic Materials, Inc. Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
US7291221B2 (en) * 2004-12-30 2007-11-06 Memc Electronic Materials, Inc. Electromagnetic pumping of liquid silicon in a crystal growing process
JP2007031274A (ja) * 2005-07-27 2007-02-08 Siltron Inc シリコン単結晶インゴット、ウエハ、その成長装置、及びその成長方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19529481A1 (de) * 1995-08-10 1997-02-13 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung von Einkristallen

Also Published As

Publication number Publication date
WO2010017389A1 (en) 2010-02-11
KR20110052605A (ko) 2011-05-18
US8551247B2 (en) 2013-10-08
TW201012984A (en) 2010-04-01
JP2011530474A (ja) 2011-12-22
EP2321450B1 (en) 2012-10-03
CN102112665A (zh) 2011-06-29
EP2321450A1 (en) 2011-05-18
US20100031870A1 (en) 2010-02-11

Similar Documents

Publication Publication Date Title
CN102112665B (zh) 通过施加时变磁场在硅熔体中产生抽吸力
US8398765B2 (en) Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation
CN101133192B (zh) 晶体生长过程中的液态硅的电磁抽吸
Muiznieks et al. Floating zone growth of silicon
Muiznieks et al. Convective phenomena in large melts including magnetic fields
Von Ammon et al. Application of magnetic fields in industrial growth of silicon single crystals
WO2005073440A1 (ja) シリコン単結晶の引上げ方法
Rudolph et al. The use of heater-magnet module for Czochralski growth of PV silicon crystals with quadratic cross section
JP2002137988A (ja) 単結晶引上げ方法
Kakimoto et al. Numerical study of the effects of cusp‐shaped magnetic fields and thermal conductivity on the melt‐crystal interface in CZ crystal growth
Ratnieks Modelling of the floating zone growth of silicon single crystals with diameter up to 8 inch
JP4192704B2 (ja) 単結晶の無欠陥領域を最大化するシミュレーション方法
Han et al. 3D numerical study of crystal rotation effect on three-phase line in floating zone silicon
Rudolph et al. Crystal growth from melt in combined heater-magnet modules
Gorbunov et al. Investigation of temperature field and melt flows in large diameter CZ silicon modeling experiments with impact of magnetic fields
Wünscher et al. Crucible-free Crystal Growth of Silicon and Germanium–Numerical Simulation and Check by Experiments
Sabanskis et al. Modelling of the influence of electromagnetic force on melt convection and dopant distribution at floating zone growth of silicon
Surovovs et al. Modelling of the pedestal growth of silicon crystals
Zhang et al. Simulation of Melt Flow and Interface Shape of 450 mm Czochralski Grown Silicon Single Crystal
Muižnieks et al. Floating Zone Growth of Silicon
Ratnieks Modelling of the floating zone growth of silicon single crystals with diameter up to 8 inch (Ph. D. thesis)
Poklad et al. Magnetic flow control in growth and casting of photovoltaic silicon: Numerical and experimental results
Mokhtari et al. Symmetry Breaking in Electromagnetic Spherical Cz Crystal Growth with Rotating Crystal and Crucible
Muiznieks et al. 1DEPARTMENT OF PHYSICS, UNIVERSITY OF LATVIA, RIGA, LATVIA; 2 INSTITUTE OF CRYSTAL GROWTH, BERLIN, GERMANY½AU1 CHAPTER OUTLINE
JP2014125417A (ja) サファイア単結晶の育成方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20121212

Termination date: 20140806

EXPY Termination of patent right or utility model