JP2008526666A5 - - Google Patents

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Publication number
JP2008526666A5
JP2008526666A5 JP2007549377A JP2007549377A JP2008526666A5 JP 2008526666 A5 JP2008526666 A5 JP 2008526666A5 JP 2007549377 A JP2007549377 A JP 2007549377A JP 2007549377 A JP2007549377 A JP 2007549377A JP 2008526666 A5 JP2008526666 A5 JP 2008526666A5
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melt
ingot
magnetic field
solid interface
shape
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JP2007549377A
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Japanese (ja)
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JP5344822B2 (ja
JP2008526666A (ja
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Priority claimed from US11/026,780 external-priority patent/US7223304B2/en
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Publication of JP5344822B2 publication Critical patent/JP5344822B2/ja
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JP2007549377A 2004-12-30 2005-11-29 成長するシリコン結晶のメルト−固体界面形状の可変磁界を用いる制御 Expired - Fee Related JP5344822B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/026,780 US7223304B2 (en) 2004-12-30 2004-12-30 Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
US11/026,780 2004-12-30
PCT/US2005/042928 WO2006073614A1 (en) 2004-12-30 2005-11-29 Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field

Publications (3)

Publication Number Publication Date
JP2008526666A JP2008526666A (ja) 2008-07-24
JP2008526666A5 true JP2008526666A5 (https=) 2009-01-22
JP5344822B2 JP5344822B2 (ja) 2013-11-20

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JP2007549377A Expired - Fee Related JP5344822B2 (ja) 2004-12-30 2005-11-29 成長するシリコン結晶のメルト−固体界面形状の可変磁界を用いる制御

Country Status (8)

Country Link
US (2) US7223304B2 (https=)
EP (1) EP1831436B1 (https=)
JP (1) JP5344822B2 (https=)
KR (1) KR101009074B1 (https=)
CN (1) CN101133193B (https=)
DE (1) DE602005014010D1 (https=)
TW (1) TWI369423B (https=)
WO (1) WO2006073614A1 (https=)

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TWI771007B (zh) * 2020-05-19 2022-07-11 環球晶圓股份有限公司 矽單晶錠的製造方法、矽單晶錠及其製造裝置
CN112831836A (zh) * 2020-12-30 2021-05-25 上海新昇半导体科技有限公司 拉晶方法和拉晶装置
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