KR101009074B1 - 가변 자기장을 사용한 성장 실리콘 결정의 용융물-고체 계면 형상의 제어 - Google Patents

가변 자기장을 사용한 성장 실리콘 결정의 용융물-고체 계면 형상의 제어 Download PDF

Info

Publication number
KR101009074B1
KR101009074B1 KR1020077015069A KR20077015069A KR101009074B1 KR 101009074 B1 KR101009074 B1 KR 101009074B1 KR 1020077015069 A KR1020077015069 A KR 1020077015069A KR 20077015069 A KR20077015069 A KR 20077015069A KR 101009074 B1 KR101009074 B1 KR 101009074B1
Authority
KR
South Korea
Prior art keywords
melt
magnetic field
ingot
solid interface
shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020077015069A
Other languages
English (en)
Korean (ko)
Other versions
KR20070102675A (ko
Inventor
젱 루
Original Assignee
엠이엠씨 일렉트로닉 머티리얼즈, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엠이엠씨 일렉트로닉 머티리얼즈, 인크. filed Critical 엠이엠씨 일렉트로닉 머티리얼즈, 인크.
Publication of KR20070102675A publication Critical patent/KR20070102675A/ko
Application granted granted Critical
Publication of KR101009074B1 publication Critical patent/KR101009074B1/ko
Assigned to 글로벌웨이퍼스 씨오., 엘티디. reassignment 글로벌웨이퍼스 씨오., 엘티디. 권리의 전부이전등록 Assignors: 썬에디슨, 인크.
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020077015069A 2004-12-30 2005-11-29 가변 자기장을 사용한 성장 실리콘 결정의 용융물-고체 계면 형상의 제어 Expired - Fee Related KR101009074B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/026,780 US7223304B2 (en) 2004-12-30 2004-12-30 Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
US11/026,780 2004-12-30

Publications (2)

Publication Number Publication Date
KR20070102675A KR20070102675A (ko) 2007-10-19
KR101009074B1 true KR101009074B1 (ko) 2011-01-18

Family

ID=36113793

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077015069A Expired - Fee Related KR101009074B1 (ko) 2004-12-30 2005-11-29 가변 자기장을 사용한 성장 실리콘 결정의 용융물-고체 계면 형상의 제어

Country Status (8)

Country Link
US (2) US7223304B2 (https=)
EP (1) EP1831436B1 (https=)
JP (1) JP5344822B2 (https=)
KR (1) KR101009074B1 (https=)
CN (1) CN101133193B (https=)
DE (1) DE602005014010D1 (https=)
TW (1) TWI369423B (https=)
WO (1) WO2006073614A1 (https=)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7223304B2 (en) * 2004-12-30 2007-05-29 Memc Electronic Materials, Inc. Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
JP2007031274A (ja) * 2005-07-27 2007-02-08 Siltron Inc シリコン単結晶インゴット、ウエハ、その成長装置、及びその成長方法
KR100831044B1 (ko) * 2005-09-21 2008-05-21 주식회사 실트론 고품질 실리콘 단결정 잉곳의 성장장치, 그 장치를 이용한성장방법
KR100827028B1 (ko) * 2006-10-17 2008-05-02 주식회사 실트론 쵸크랄스키법을 이용한 반도체 단결정 제조 방법, 및 이방법에 의해 제조된 반도체 단결정 잉곳 및 웨이퍼
DE102006060359B4 (de) * 2006-12-20 2013-09-05 Siltronic Ag Verfahren und Vorrichtung zur Herstellung von Halbleiterscheiben aus Silicium
KR100830047B1 (ko) 2006-12-29 2008-05-15 주식회사 실트론 대류 분포 제어에 의해 산소농도 제어가 가능한 반도체단결정 제조 방법, 그 장치 및 반도체 단결정 잉곳
JP5083001B2 (ja) * 2008-04-08 2012-11-28 株式会社Ｓｕｍｃｏ シリコン単結晶の引上げ方法
JP2011526876A (ja) * 2008-06-30 2011-10-20 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド アンバランス磁場及び同方向回転を用いた成長シリコン結晶の融液−固体界面形状の制御方法
CN102112665B (zh) 2008-08-07 2012-12-12 Memc电子材料有限公司 通过施加时变磁场在硅熔体中产生抽吸力
JP2013028476A (ja) * 2011-07-27 2013-02-07 Covalent Materials Corp 単結晶引上方法
KR101455922B1 (ko) * 2013-03-06 2014-10-28 주식회사 엘지실트론 커스프 자기장을 이용한 실리콘 단결정 잉곳 성장장치 및 성장방법
US9786423B2 (en) * 2013-10-28 2017-10-10 Massachusetts Institute Of Technology Method and apparatus for producing an asymmetric magnetic field
KR101723739B1 (ko) * 2015-09-08 2017-04-05 주식회사 엘지실트론 단결정 잉곳 성장장치 및 그 성장방법
KR102060422B1 (ko) * 2015-11-02 2019-12-30 가부시키가이샤 사무코 단결정 실리콘의 제조 방법
CN105350070A (zh) * 2015-12-09 2016-02-24 天津市环欧半导体材料技术有限公司 一种利用变频磁场控制直拉法硅单晶氧含量的方法
CN107151817A (zh) * 2016-03-03 2017-09-12 上海新昇半导体科技有限公司 单晶硅的生长方法及其制备的单晶硅锭
US9988740B1 (en) * 2016-08-16 2018-06-05 Northrop Grumman Systems Corporation Shaped induction field crystal printer
WO2020210129A1 (en) * 2019-04-11 2020-10-15 Globalwafers Co., Ltd. Process for preparing ingot having reduced distortion at late body length
CN110517936B (zh) * 2019-09-06 2021-07-02 绍兴阔源机械科技有限公司 一种快速响应式交流熔断器
US11111597B2 (en) 2019-09-13 2021-09-07 Globalwafers Co., Ltd. Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method
US11111596B2 (en) 2019-09-13 2021-09-07 Globalwafers Co., Ltd. Single crystal silicon ingot having axial uniformity
CN115341264A (zh) * 2019-09-13 2022-11-15 环球晶圆股份有限公司 使用连续柴可斯基方法生长氮掺杂单晶硅锭的方法以及通过此方法生长的单晶硅锭
TWI771007B (zh) * 2020-05-19 2022-07-11 環球晶圓股份有限公司 矽單晶錠的製造方法、矽單晶錠及其製造裝置
CN112831836A (zh) * 2020-12-30 2021-05-25 上海新昇半导体科技有限公司 拉晶方法和拉晶装置
JP7124938B1 (ja) * 2021-07-29 2022-08-24 信越半導体株式会社 シリコン単結晶の製造方法
US12351938B2 (en) 2022-02-10 2025-07-08 Globalwafers Co., Ltd. Methods for producing a product ingot having low oxygen content
CN114855284A (zh) * 2022-04-06 2022-08-05 上海新昇半导体科技有限公司 一种生长单晶硅的方法
US12486594B2 (en) 2022-08-29 2025-12-02 Globalwafers Co., Ltd. Ingot puller apparatus that axially position magnetic poles
US12486593B2 (en) 2022-08-29 2025-12-02 Globalwafers Co., Ltd. Axial positioning of magnetic poles while producing a silicon ingot
CN116145238A (zh) * 2022-12-31 2023-05-23 上海新昇半导体科技有限公司 一种晶体生长方法、装置及rf-soi基材
CN116300762B (zh) * 2023-03-30 2025-09-30 上海天岳半导体材料有限公司 基于切割区域温场的过程控制模型的构建方法及晶体棒过程控制切割方法

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4436577A (en) * 1980-12-29 1984-03-13 Monsanto Company Method of regulating concentration and distribution of oxygen in Czochralski grown silicon
JPS6011297A (ja) 1983-06-27 1985-01-21 Nippon Telegr & Teleph Corp <Ntt> 結晶育成制御方法及び制御装置
JPS6027682A (ja) * 1983-07-26 1985-02-12 Toshiba Corp 単結晶引上装置
JPS6144797A (ja) * 1984-08-10 1986-03-04 Toshiba Corp 単結晶育成装置およびその制御方法
US4617173A (en) * 1984-11-30 1986-10-14 General Signal Corporation System for controlling the diameter of a crystal in a crystal growing furnace
EP0194051B1 (en) 1985-02-14 1990-04-18 Kabushiki Kaisha Toshiba Method for manufacturing single crystal
US4659423A (en) 1986-04-28 1987-04-21 International Business Machines Corporation Semiconductor crystal growth via variable melt rotation
JP2561072B2 (ja) * 1986-04-30 1996-12-04 東芝セラミツクス株式会社 単結晶の育成方法及びその装置
GB8805478D0 (en) 1988-03-08 1988-04-07 Secr Defence Method & apparatus for growing semi-conductor crystalline materials
US5137699A (en) * 1990-12-17 1992-08-11 General Electric Company Apparatus and method employing interface heater segment for control of solidification interface shape in a crystal growth process
US5178720A (en) * 1991-08-14 1993-01-12 Memc Electronic Materials, Inc. Method for controlling oxygen content of silicon crystals using a combination of cusp magnetic field and crystal and crucible rotation rates
JPH06172081A (ja) * 1992-12-03 1994-06-21 Komatsu Denshi Kinzoku Kk 半導体単結晶の酸素濃度制御方法
US5685159A (en) * 1994-02-04 1997-11-11 Chicago Bridge & Iron Technical Services Company Method and system for storing cold liquid
EP0732427B1 (en) 1995-03-16 2002-02-06 Sumitomo Electric Industries, Limited A method and apparatus for the growth of a single crystal
US5653799A (en) * 1995-06-02 1997-08-05 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal
US5593498A (en) * 1995-06-09 1997-01-14 Memc Electronic Materials, Inc. Apparatus for rotating a crucible of a crystal pulling machine
JP3841863B2 (ja) * 1995-12-13 2006-11-08 コマツ電子金属株式会社 シリコン単結晶の引き上げ方法
JP3969460B2 (ja) * 1996-06-20 2007-09-05 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 磁場印加による半導体単結晶の製造方法
JPH10114597A (ja) * 1996-08-20 1998-05-06 Komatsu Electron Metals Co Ltd 単結晶シリコンの製造方法およびその装置
JP3449128B2 (ja) * 1996-08-30 2003-09-22 信越半導体株式会社 単結晶成長方法
JPH1179889A (ja) * 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
US5846318A (en) * 1997-07-17 1998-12-08 Memc Electric Materials, Inc. Method and system for controlling growth of a silicon crystal
KR100395181B1 (ko) * 1997-08-26 2003-08-21 미츠비시 스미토모 실리콘 주식회사 고품질 실리콘 단결정 및 그 제조방법
US5882402A (en) * 1997-09-30 1999-03-16 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal
JP2992988B2 (ja) * 1997-11-06 1999-12-20 日本電気株式会社 シリコン単結晶育成方法
JP3943717B2 (ja) * 1998-06-11 2007-07-11 信越半導体株式会社 シリコン単結晶ウエーハ及びその製造方法
JP4177488B2 (ja) * 1998-09-16 2008-11-05 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 結晶体の製造装置および方法
EP1125009B1 (en) 1998-10-14 2002-12-18 MEMC Electronic Materials, Inc. Method for accurately pulling a crystal
US6535092B1 (en) * 1999-09-21 2003-03-18 Magnetic Solutions (Holdings) Limited Device for generating a variable magnetic field
JP3783495B2 (ja) * 1999-11-30 2006-06-07 株式会社Ｓｕｍｃｏ 高品質シリコン単結晶の製造方法
JP3573045B2 (ja) * 2000-02-08 2004-10-06 三菱住友シリコン株式会社 高品質シリコン単結晶の製造方法
JP4808832B2 (ja) * 2000-03-23 2011-11-02 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 無欠陥結晶の製造方法
JP2003055092A (ja) * 2001-08-16 2003-02-26 Sumitomo Mitsubishi Silicon Corp シリコン単結晶の引上げ方法
JP4192530B2 (ja) * 2002-08-27 2008-12-10 株式会社Ｓｕｍｃｏ パーティクルモニター用シリコン単結晶ウェーハの製造方法
US7125450B2 (en) * 2002-11-12 2006-10-24 Memc Electronic Materials, Inc. Process for preparing single crystal silicon using crucible rotation to control temperature gradient
JP4749661B2 (ja) * 2003-10-15 2011-08-17 住友重機械工業株式会社 単結晶引上げ装置用超電導磁石装置における冷凍機の装着構造及び冷凍機のメンテナンス方法
JP4710247B2 (ja) * 2004-05-19 2011-06-29 株式会社Sumco 単結晶製造装置及び方法
US7291221B2 (en) * 2004-12-30 2007-11-06 Memc Electronic Materials, Inc. Electromagnetic pumping of liquid silicon in a crystal growing process
US7223304B2 (en) * 2004-12-30 2007-05-29 Memc Electronic Materials, Inc. Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Journal of CRYSTAL GROWTH, ELSEVIER, Amsterdam, Vol. 193, No.3, 402-412
Journal of CRYSTAL GROWTH, ELSEVIER, Amsterdam, Vol. 98, No.4, 777-781

Also Published As

Publication number Publication date
US20060144321A1 (en) 2006-07-06
US7611580B2 (en) 2009-11-03
DE602005014010D1 (de) 2009-05-28
EP1831436A1 (en) 2007-09-12
KR20070102675A (ko) 2007-10-19
JP5344822B2 (ja) 2013-11-20
US7223304B2 (en) 2007-05-29
TW200632150A (en) 2006-09-16
WO2006073614A1 (en) 2006-07-13
US20070227442A1 (en) 2007-10-04
JP2008526666A (ja) 2008-07-24
EP1831436B1 (en) 2009-04-15
CN101133193B (zh) 2010-05-12
TWI369423B (en) 2012-08-01
CN101133193A (zh) 2008-02-27

Similar Documents

Publication Publication Date Title
KR101009074B1 (ko) 가변 자기장을 사용한 성장 실리콘 결정의 용융물-고체 계면 형상의 제어
US6592662B2 (en) Method for preparing silicon single crystal and silicon single crystal
KR960006260B1 (ko) 커스프자장과, 결정 및 도가니의 회전속도와의 조합에 의한 실리콘 결정의 산소량 조절방법
EP1605079A1 (en) Method and apparatus for growing silicon crystal by controlling melt-solid interface shape as a function of axial length
US20090183670A1 (en) Apparatus for manufacturing high-quality semiconductor single crystal ingot and method using the same
KR19980018538A (ko) 쵸크랄스키 성장 실리콘의 열이력을 제어하는 방법
JP2009114054A (ja) 酸素濃度特性が改善した半導体単結晶の製造方法
EP1498517A1 (en) Method for producing silicon single crystal and, silicon single crystal and silicon wafer
KR100717237B1 (ko) 균일한 열 이력을 갖는 단결정 실리콘을 제조하는 방법
US7582159B2 (en) Method for producing a single crystal
KR100869940B1 (ko) 실리콘 단결정 잉곳의 제조방법
KR100991088B1 (ko) 커스프 자기장을 이용한 반도체 단결정 잉곳 제조장치 및제조방법
JP2000086392A (ja) シリコン単結晶の製造方法
JP2001089289A (ja) 単結晶引上方法
JP7672989B2 (ja) 本体長さ後半の歪みが低減されたインゴットの製造方法
KR20030059293A (ko) 베이컨시-지배 단결정 실리콘의 열 이력을 제어하는 공정
KR100221087B1 (ko) 실리콘 단결정 성장 방법 및 실리콘 단결정
US20070163487A1 (en) A method for producing a single crystal and an apparatus for producing a single crystal
JP2000239096A (ja) シリコン単結晶の製造方法
KR101105540B1 (ko) 저밀도의 결정결함 분포가 균일한 단결정 제조방법, 제조장치 및 이 방법에 의해 제조된 단결정
KR100829061B1 (ko) 커습 자기장을 이용한 실리콘 단결정 성장 방법
WO2025134715A1 (ja) 単結晶の製造方法
KR101002134B1 (ko) 쵸크랄스키법을 이용한 반도체 단결정 제조 방법
JP2000239097A (ja) 半導体用シリコン単結晶の引上げ方法
KR100868192B1 (ko) 가변 자기장을 이용한 반도체 단결정 제조 방법, 그 장치및 반도체 단결정 잉곳

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20131226

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20141224

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

FPAY Annual fee payment

Payment date: 20151224

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20170103

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20180103

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20190103

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

FPAY Annual fee payment

Payment date: 20200102

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20250112

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

H13 Ip right lapsed

Free format text: ST27 STATUS EVENT CODE: N-4-6-H10-H13-OTH-PC1903 (AS PROVIDED BY THE NATIONAL OFFICE); TERMINATION CATEGORY : DEFAULT_OF_REGISTRATION_FEE

Effective date: 20250112

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20250112