JP2011526075A5 - - Google Patents

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Publication number
JP2011526075A5
JP2011526075A5 JP2011516394A JP2011516394A JP2011526075A5 JP 2011526075 A5 JP2011526075 A5 JP 2011526075A5 JP 2011516394 A JP2011516394 A JP 2011516394A JP 2011516394 A JP2011516394 A JP 2011516394A JP 2011526075 A5 JP2011526075 A5 JP 2011526075A5
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JP
Japan
Prior art keywords
substrate
area coverage
percent area
structures
shrinking
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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JP2011516394A
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English (en)
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JP2011526075A (ja
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Priority claimed from PCT/US2009/046077 external-priority patent/WO2009158158A2/en
Publication of JP2011526075A publication Critical patent/JP2011526075A/ja
Publication of JP2011526075A5 publication Critical patent/JP2011526075A5/ja
Ceased legal-status Critical Current

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Claims (2)

  1. 基板から光を抽出するための光学的構成体を作製する方法であって、
    (a)表面を有する基板を準備する工程と、
    (b)前記基板の前記表面を露出させる空き領域を形成する、複数の構造体を前記基板の前記表面上に配設する工程と、
    (c)前記構造体の少なくとも一部を収縮させる工程と、
    (d)オーバーコートを施して、前記収縮した構造体と前記空き領域中の前記基板の前記表面を被覆する工程と、を含む、方法。
  2. 光を基板から抽出するために基板の表面上に複数の構造体を作製する方法であって、
    (a)表面を有する基板を準備する工程と、
    (b)前記基板の前記表面の所望の第1のパーセント面積被覆率を確認する工程と、
    (c)前記基板の前記表面上に複数の構造体を配設して、前記所望の第1のパーセント面積被覆率よりも大きい第2のパーセント面積被覆率を得る工程と、
    (d)前記構造体の少なくとも一部を収縮させて、前記パーセント面積被覆率を前記所望の第1のパーセント面積被覆率まで低減させる工程と、を含む、方法。
JP2011516394A 2008-06-26 2009-06-03 光抽出器の作製方法 Ceased JP2011526075A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US7593208P 2008-06-26 2008-06-26
US61/075,932 2008-06-26
PCT/US2009/046077 WO2009158158A2 (en) 2008-06-26 2009-06-03 Method of fabricating light extractor

Publications (2)

Publication Number Publication Date
JP2011526075A JP2011526075A (ja) 2011-09-29
JP2011526075A5 true JP2011526075A5 (ja) 2012-07-12

Family

ID=41445189

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011516394A Ceased JP2011526075A (ja) 2008-06-26 2009-06-03 光抽出器の作製方法

Country Status (7)

Country Link
US (1) US8324000B2 (ja)
EP (1) EP2308102A4 (ja)
JP (1) JP2011526075A (ja)
KR (1) KR20110031956A (ja)
CN (1) CN102124577A (ja)
TW (1) TW201007991A (ja)
WO (1) WO2009158158A2 (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110030630A (ko) 2008-06-26 2011-03-23 쓰리엠 이노베이티브 프로퍼티즈 컴파니 반도체 광 변환 구조물
US8461608B2 (en) 2008-06-26 2013-06-11 3M Innovative Properties Company Light converting construction
US20110172292A1 (en) * 2008-06-30 2011-07-14 Hansen Jens Bo Rode Antidote oligomers
WO2010027650A1 (en) * 2008-09-04 2010-03-11 3M Innovative Properties Company Light source with improved monochromaticity
KR20110105842A (ko) 2008-12-24 2011-09-27 쓰리엠 이노베이티브 프로퍼티즈 컴파니 양면 파장 변환기를 갖는 광 발생 소자
EP2380217A2 (en) 2008-12-24 2011-10-26 3M Innovative Properties Company Method of making double-sided wavelength converter and light generating device using same
US8933526B2 (en) * 2009-07-15 2015-01-13 First Solar, Inc. Nanostructured functional coatings and devices
US8334646B2 (en) * 2010-09-27 2012-12-18 Osram Sylvania Inc. LED wavelength-coverting plate with microlenses in multiple layers
US8242684B2 (en) 2010-09-27 2012-08-14 Osram Sylvania Inc. LED wavelength-converting plate with microlenses
US8692446B2 (en) * 2011-03-17 2014-04-08 3M Innovative Properties Company OLED light extraction films having nanoparticles and periodic structures
JP6101784B2 (ja) * 2013-03-06 2017-03-22 Jxエネルギー株式会社 凹凸構造を有する部材の製造方法及びそれにより製造された凹凸構造を有する部材
JP6221387B2 (ja) 2013-06-18 2017-11-01 日亜化学工業株式会社 発光装置とその製造方法
CN104091898B (zh) * 2014-07-30 2018-06-01 上海天马有机发光显示技术有限公司 有机发光显示面板及其制造方法
US10756306B2 (en) 2016-10-28 2020-08-25 3M Innovative Properties Company Nanostructured article
KR102668109B1 (ko) * 2020-11-03 2024-05-22 한국전자통신연구원 광소자의 광학 특성을 조절하는 나노 구조체 및 그의 제조방법

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6504180B1 (en) * 1998-07-28 2003-01-07 Imec Vzw And Vrije Universiteit Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom
TW444132B (en) * 2000-02-24 2001-07-01 United Microelectronics Corp Method for predicting the radius of curvature of microlens
FR2824228B1 (fr) 2001-04-26 2003-08-01 Centre Nat Rech Scient Dispositif electroluminescent a extracteur de lumiere
US6580740B2 (en) 2001-07-18 2003-06-17 The Furukawa Electric Co., Ltd. Semiconductor laser device having selective absorption qualities
US6815354B2 (en) * 2001-10-27 2004-11-09 Nutool, Inc. Method and structure for thru-mask contact electrodeposition
JP3817471B2 (ja) * 2001-12-11 2006-09-06 富士写真フイルム株式会社 多孔質構造体および構造体、ならびにそれらの製造方法
US7016384B2 (en) 2002-03-14 2006-03-21 Fuji Photo Film Co., Ltd. Second-harmonic generation device using semiconductor laser element having quantum-well active layer in which resonator length and mirror loss are arranged to increase width of gain peak
US7170097B2 (en) * 2003-02-14 2007-01-30 Cree, Inc. Inverted light emitting diode on conductive substrate
JP4703108B2 (ja) * 2003-09-10 2011-06-15 三星モバイルディスプレイ株式會社 発光素子基板およびそれを用いた発光素子
JP4093943B2 (ja) 2003-09-30 2008-06-04 三洋電機株式会社 発光素子およびその製造方法
JP4590905B2 (ja) * 2003-10-31 2010-12-01 豊田合成株式会社 発光素子および発光装置
JP2005144569A (ja) * 2003-11-12 2005-06-09 Hitachi Ltd 二次元配列構造体基板および該基板から剥離した微粒子
US7408201B2 (en) 2004-03-19 2008-08-05 Philips Lumileds Lighting Company, Llc Polarized semiconductor light emitting device
KR20070024487A (ko) * 2004-05-26 2007-03-02 닛산 가가쿠 고교 가부시키 가이샤 면발광체
US7361938B2 (en) 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
JP4717882B2 (ja) * 2004-06-14 2011-07-06 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 改善された発光プロファイルを備えるled
US7161188B2 (en) 2004-06-28 2007-01-09 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element
US7482634B2 (en) * 2004-09-24 2009-01-27 Lockheed Martin Corporation Monolithic array for solid state ultraviolet light emitters
US7402831B2 (en) 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7413918B2 (en) * 2005-01-11 2008-08-19 Semileds Corporation Method of making a light emitting diode
US7524686B2 (en) * 2005-01-11 2009-04-28 Semileds Corporation Method of making light emitting diodes (LEDs) with improved light extraction by roughening
TW200637037A (en) 2005-02-18 2006-10-16 Sumitomo Chemical Co Semiconductor light-emitting element and fabrication method thereof
JP2006261659A (ja) 2005-02-18 2006-09-28 Sumitomo Chemical Co Ltd 半導体発光素子の製造方法
JP4466571B2 (ja) 2005-05-12 2010-05-26 株式会社デンソー ドライバ状態検出装置、車載警報装置、運転支援システム
KR20070011041A (ko) 2005-07-19 2007-01-24 주식회사 엘지화학 광추출 효율을 높인 발광다이오드 소자 및 이의 제조방법
US7196354B1 (en) 2005-09-29 2007-03-27 Luminus Devices, Inc. Wavelength-converting light-emitting devices
JP5578789B2 (ja) * 2006-03-03 2014-08-27 コーニンクレッカ フィリップス エヌ ヴェ エレクトロルミネセント装置
KR100799859B1 (ko) 2006-03-22 2008-01-31 삼성전기주식회사 백색 발광 소자
JP2007273746A (ja) 2006-03-31 2007-10-18 Sumitomo Chemical Co Ltd 固体表面の微細加工方法および発光素子
US20070284565A1 (en) 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
KR100798863B1 (ko) 2006-06-28 2008-01-29 삼성전기주식회사 질화갈륨계 발광 다이오드 소자 및 그 제조방법
JP2008010771A (ja) * 2006-06-30 2008-01-17 Toshiba Corp 半導体発光素子及びその製造方法
SG140481A1 (en) * 2006-08-22 2008-03-28 Agency Science Tech & Res A method for fabricating micro and nano structures
KR20110030630A (ko) 2008-06-26 2011-03-23 쓰리엠 이노베이티브 프로퍼티즈 컴파니 반도체 광 변환 구조물
KR20110031953A (ko) 2008-06-26 2011-03-29 쓰리엠 이노베이티브 프로퍼티즈 컴파니 반도체 광 변환 구조체
US8461608B2 (en) 2008-06-26 2013-06-11 3M Innovative Properties Company Light converting construction

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