JP2011521446A5 - - Google Patents

Download PDF

Info

Publication number
JP2011521446A5
JP2011521446A5 JP2011508627A JP2011508627A JP2011521446A5 JP 2011521446 A5 JP2011521446 A5 JP 2011521446A5 JP 2011508627 A JP2011508627 A JP 2011508627A JP 2011508627 A JP2011508627 A JP 2011508627A JP 2011521446 A5 JP2011521446 A5 JP 2011521446A5
Authority
JP
Japan
Prior art keywords
layer
dopant concentration
semiconductor material
rising region
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011508627A
Other languages
English (en)
Japanese (ja)
Other versions
JP5593308B2 (ja
JP2011521446A (ja
Filing date
Publication date
Priority claimed from US12/117,121 external-priority patent/US7977713B2/en
Application filed filed Critical
Publication of JP2011521446A publication Critical patent/JP2011521446A/ja
Publication of JP2011521446A5 publication Critical patent/JP2011521446A5/ja
Application granted granted Critical
Publication of JP5593308B2 publication Critical patent/JP5593308B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2011508627A 2008-05-08 2009-05-06 促進された導電性を有する非パンチスルー半導体チャネルを備えた半導体素子及び製法 Expired - Fee Related JP5593308B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/117,121 2008-05-08
US12/117,121 US7977713B2 (en) 2008-05-08 2008-05-08 Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
PCT/US2009/042983 WO2009137578A2 (en) 2008-05-08 2009-05-06 Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making

Publications (3)

Publication Number Publication Date
JP2011521446A JP2011521446A (ja) 2011-07-21
JP2011521446A5 true JP2011521446A5 (https=) 2012-06-21
JP5593308B2 JP5593308B2 (ja) 2014-09-17

Family

ID=41265372

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011508627A Expired - Fee Related JP5593308B2 (ja) 2008-05-08 2009-05-06 促進された導電性を有する非パンチスルー半導体チャネルを備えた半導体素子及び製法

Country Status (9)

Country Link
US (2) US7977713B2 (https=)
EP (1) EP2289103A4 (https=)
JP (1) JP5593308B2 (https=)
KR (1) KR20110018891A (https=)
CN (1) CN102084484B (https=)
AU (1) AU2009244273A1 (https=)
CA (1) CA2722942A1 (https=)
TW (1) TWI415258B (https=)
WO (1) WO2009137578A2 (https=)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8012539B2 (en) 2008-05-09 2011-09-06 Kraton Polymers U.S. Llc Method for making sulfonated block copolymers, method for making membranes from such block copolymers and membrane structures
US8058655B2 (en) * 2008-11-05 2011-11-15 Ss Sc Ip, Llc Vertical junction field effect transistors having sloped sidewalls and methods of making
US20110049532A1 (en) * 2009-08-28 2011-03-03 Microsemi Corporation Silicon carbide dual-mesa static induction transistor
US8263713B2 (en) 2009-10-13 2012-09-11 Kraton Polymers U.S. Llc Amine neutralized sulfonated block copolymers and method for making same
US8445631B2 (en) 2009-10-13 2013-05-21 Kraton Polymers U.S. Llc Metal-neutralized sulfonated block copolymers, process for making them and their use
US8211784B2 (en) * 2009-10-26 2012-07-03 Advanced Ion Beam Technology, Inc. Method for manufacturing a semiconductor device with less leakage current induced by carbon implant
JP2013513252A (ja) * 2009-12-08 2013-04-18 エスエス エスシー アイピー、エルエルシー 打込みされた側壁を有する半導体デバイスを製造する方法およびそれによって製造されたデバイス
TWI394278B (zh) * 2009-12-29 2013-04-21 Vanguard Int Semiconduct Corp 半導體結構及其製造方法
WO2011149768A2 (en) * 2010-05-25 2011-12-01 Ss Sc Ip, Llc Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making
US9429366B2 (en) 2010-09-29 2016-08-30 Kraton Polymers U.S. Llc Energy recovery ventilation sulfonated block copolymer laminate membrane
US9394414B2 (en) 2010-09-29 2016-07-19 Kraton Polymers U.S. Llc Elastic, moisture-vapor permeable films, their preparation and their use
BR112013007705A2 (pt) 2010-10-18 2016-08-09 Kraton Polymers Us Llc solução tendo uma composição de copolímero em bloco sulfonado, película ou membrana, dispersão aquosa, compósito, composição de copolímeto em bloco sulfonado, processo, método para formar uma composição de copolímero em bloco sulfonado, e, célula eletrodialítica
US8519410B1 (en) 2010-12-20 2013-08-27 Microsemi Corporation Silicon carbide vertical-sidewall dual-mesa static induction transistor
US9861941B2 (en) 2011-07-12 2018-01-09 Kraton Polymers U.S. Llc Modified sulfonated block copolymers and the preparation thereof
US8946788B2 (en) 2011-08-04 2015-02-03 Avogy, Inc. Method and system for doping control in gallium nitride based devices
US8969912B2 (en) * 2011-08-04 2015-03-03 Avogy, Inc. Method and system for a GaN vertical JFET utilizing a regrown channel
US9184305B2 (en) * 2011-08-04 2015-11-10 Avogy, Inc. Method and system for a GAN vertical JFET utilizing a regrown gate
CN105493291A (zh) 2013-06-06 2016-04-13 美国联合碳化硅公司 沟槽屏蔽连接结型场效应晶体管
US9722017B2 (en) * 2014-01-28 2017-08-01 Mitsubishi Electric Corporation Silicon carbide semiconductor device
US9224845B1 (en) * 2014-11-12 2015-12-29 Stmicroelectronics, Inc. Silicon carbide static induction transistor and process for making a silicon carbide static induction transistor
US10396215B2 (en) * 2015-03-10 2019-08-27 United Silicon Carbide, Inc. Trench vertical JFET with improved threshold voltage control
CN106158943A (zh) * 2016-06-28 2016-11-23 长安大学 N沟碳化硅静电感应晶闸管及其制造方法
WO2018048972A1 (en) * 2016-09-09 2018-03-15 United Silicon Carbide Inc. Trench vertical jfet with improved threshold voltage control
JP6787367B2 (ja) 2017-07-26 2020-11-18 株式会社デンソー 半導体装置
US10276667B1 (en) 2018-05-31 2019-04-30 Silanna Asia Pte Ltd High voltage breakdown tapered vertical conduction junction transistor
JP7204582B2 (ja) 2019-06-10 2023-01-16 株式会社島精機製作所 編地引下げ装置
CN113054000A (zh) * 2021-03-15 2021-06-29 无锡新洁能股份有限公司 超结结型场效应晶体管及其制作方法
EP4228009A1 (en) * 2022-02-11 2023-08-16 Infineon Technologies Austria AG Trench junction field effect transistor comprising a mesa region

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2984752A (en) * 1953-08-13 1961-05-16 Rca Corp Unipolar transistors
JPS53121581A (en) * 1977-03-31 1978-10-24 Seiko Instr & Electronics Ltd Logical element of electrostatic inductive transistor
US4364072A (en) * 1978-03-17 1982-12-14 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction type semiconductor device with multiple doped layers for potential modification
US4403396A (en) * 1981-12-24 1983-09-13 Gte Laboratories Incorporated Semiconductor device design and process
US4587540A (en) * 1982-04-05 1986-05-06 International Business Machines Corporation Vertical MESFET with mesa step defining gate length
US5262668A (en) * 1992-08-13 1993-11-16 North Carolina State University At Raleigh Schottky barrier rectifier including schottky barrier regions of differing barrier heights
DE4423068C1 (de) * 1994-07-01 1995-08-17 Daimler Benz Ag Feldeffekt-Transistoren aus SiC und Verfahren zu ihrer Herstellung
US5429956A (en) * 1994-09-30 1995-07-04 United Microelectronics Corporation Method for fabricating a field effect transistor with a self-aligned anti-punchthrough implant channel
US5592005A (en) * 1995-03-31 1997-01-07 Siliconix Incorporated Punch-through field effect transistor
US5753938A (en) * 1996-08-08 1998-05-19 North Carolina State University Static-induction transistors having heterojunction gates and methods of forming same
JPH10275918A (ja) * 1997-03-28 1998-10-13 Toyo Electric Mfg Co Ltd 半導体装置
JP3180895B2 (ja) * 1997-08-18 2001-06-25 富士電機株式会社 炭化けい素半導体装置の製造方法
US5945701A (en) * 1997-12-19 1999-08-31 Northrop Grumman Corporation Static induction transistor
EP2081219B1 (en) * 1999-12-24 2011-01-05 Sumitomo Electric Industries, Ltd. Junction field effect transistor
US6816294B2 (en) * 2001-02-16 2004-11-09 Electro Scientific Industries, Inc. On-the-fly beam path error correction for memory link processing
JP4127987B2 (ja) * 2001-08-23 2008-07-30 株式会社日立製作所 半導体装置
JP4288907B2 (ja) * 2001-08-29 2009-07-01 株式会社デンソー 炭化珪素半導体装置及びその製造方法
US6855970B2 (en) * 2002-03-25 2005-02-15 Kabushiki Kaisha Toshiba High-breakdown-voltage semiconductor device
JP4122880B2 (ja) * 2002-07-24 2008-07-23 住友電気工業株式会社 縦型接合型電界効果トランジスタ
JP2004134547A (ja) * 2002-10-10 2004-04-30 Hitachi Ltd 半導体装置
JP4265234B2 (ja) * 2003-02-13 2009-05-20 株式会社デンソー 炭化珪素半導体装置およびその製造方法
US6943407B2 (en) * 2003-06-17 2005-09-13 International Business Machines Corporation Low leakage heterojunction vertical transistors and high performance devices thereof
US20050067630A1 (en) * 2003-09-25 2005-03-31 Zhao Jian H. Vertical junction field effect power transistor
US7187021B2 (en) * 2003-12-10 2007-03-06 General Electric Company Static induction transistor
US7407837B2 (en) * 2004-01-27 2008-08-05 Fuji Electric Holdings Co., Ltd. Method of manufacturing silicon carbide semiconductor device
US7211845B1 (en) 2004-04-19 2007-05-01 Qspeed Semiconductor, Inc. Multiple doped channel in a multiple doped gate junction field effect transistor
US7820511B2 (en) * 2004-07-08 2010-10-26 Semisouth Laboratories, Inc. Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making
US7202528B2 (en) * 2004-12-01 2007-04-10 Semisouth Laboratories, Inc. Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making
US7279368B2 (en) * 2005-03-04 2007-10-09 Cree, Inc. Method of manufacturing a vertical junction field effect transistor having an epitaxial gate
US7534666B2 (en) * 2005-07-27 2009-05-19 International Rectifier Corporation High voltage non punch through IGBT for switch mode power supplies
JP2006080554A (ja) * 2005-10-24 2006-03-23 Denso Corp 炭化珪素半導体装置の製造方法
JP4939797B2 (ja) * 2005-11-01 2012-05-30 ルネサスエレクトロニクス株式会社 スイッチング半導体装置
US7763506B2 (en) * 2007-09-10 2010-07-27 Infineon Technologies Austria Ag Method for making an integrated circuit including vertical junction field effect transistors
WO2011149768A2 (en) * 2010-05-25 2011-12-01 Ss Sc Ip, Llc Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making

Similar Documents

Publication Publication Date Title
JP2011521446A5 (https=)
JP6721401B2 (ja) エピタキシャル成長による半導体デバイスの製作
JP5739813B2 (ja) 半導体装置
JP2009516361A5 (https=)
JP2012508455A5 (https=)
JP2009532902A5 (https=)
JP2012104648A5 (https=)
CN103904117B (zh) 半导体器件及其制造方法
JP2015529006A5 (https=)
CN108242468B (zh) 半导体装置及其制造方法
US9613810B2 (en) Silicon carbide semiconductor devices having nitrogen-doped interface
US8823140B2 (en) GaN vertical bipolar transistor
JPWO2014013618A1 (ja) 半導体装置及びその製造方法
JP2010267762A (ja) 半導体装置およびその製造方法
CN105633147A (zh) 隧穿场效应晶体管及其制造方法
CN104795328B (zh) 一种沟槽型vdmos制造方法和一种沟槽型vdmos
CN103151371A (zh) 一种晶圆结构以及应用其的功率器件
US20120037924A1 (en) Junction Field-Effect Transistor
CN103000670B (zh) 具有高沟道迁移率的SiC-MOSFET
CN103579296B (zh) 半导体装置及其制造方法
JP2006324517A5 (https=)
CN102290433B (zh) 具有两级掺杂曲线的功率半导体器件
CN111194477B (zh) 用于制造栅格的方法
JP5037476B2 (ja) 半導体装置
CN112993010A (zh) 氮化镓高电子迁移率晶体管及其制造方法