KR20110018891A - 도전율이 강화된 ｎｐｔ 반도체 채널을 갖는 반도체소자와 그 제조방법 - Google Patents

도전율이 강화된 ｎｐｔ 반도체 채널을 갖는 반도체소자와 그 제조방법 Download PDF

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KR20110018891A
KR20110018891A KR1020107027357A KR20107027357A KR20110018891A KR 20110018891 A KR20110018891 A KR 20110018891A KR 1020107027357 A KR1020107027357 A KR 1020107027357A KR 20107027357 A KR20107027357 A KR 20107027357A KR 20110018891 A KR20110018891 A KR 20110018891A
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South Korea
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layer
protrusion
doping concentration
semiconductor material
semiconductor device
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Korean (ko)
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이고르 산킨
데이비드 시. 셰리던
조셉 닐 메릿
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세미사우스 래보러토리즈, 인크.
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Publication of KR20110018891A publication Critical patent/KR20110018891A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/328—Channel regions of field-effect devices of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020107027357A 2008-05-08 2009-05-06 도전율이 강화된 ｎｐｔ 반도체 채널을 갖는 반도체소자와 그 제조방법 Ceased KR20110018891A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/117,121 2008-05-08
US12/117,121 US7977713B2 (en) 2008-05-08 2008-05-08 Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making

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KR20110018891A true KR20110018891A (ko) 2011-02-24

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KR1020107027357A Ceased KR20110018891A (ko) 2008-05-08 2009-05-06 도전율이 강화된 ｎｐｔ 반도체 채널을 갖는 반도체소자와 그 제조방법

Country Status (9)

Country Link
US (2) US7977713B2 (https=)
EP (1) EP2289103A4 (https=)
JP (1) JP5593308B2 (https=)
KR (1) KR20110018891A (https=)
CN (1) CN102084484B (https=)
AU (1) AU2009244273A1 (https=)
CA (1) CA2722942A1 (https=)
TW (1) TWI415258B (https=)
WO (1) WO2009137578A2 (https=)

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KR20200141393A (ko) 2019-06-10 2020-12-18 가부시키가이샤 시마세이키 세이사쿠쇼 편성포 인하장치

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US9429366B2 (en) 2010-09-29 2016-08-30 Kraton Polymers U.S. Llc Energy recovery ventilation sulfonated block copolymer laminate membrane
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US9861941B2 (en) 2011-07-12 2018-01-09 Kraton Polymers U.S. Llc Modified sulfonated block copolymers and the preparation thereof
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Publication number Priority date Publication date Assignee Title
KR20200141393A (ko) 2019-06-10 2020-12-18 가부시키가이샤 시마세이키 세이사쿠쇼 편성포 인하장치

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US20110217829A1 (en) 2011-09-08
US7977713B2 (en) 2011-07-12
CN102084484A (zh) 2011-06-01
JP5593308B2 (ja) 2014-09-17
AU2009244273A1 (en) 2009-11-12
JP2011521446A (ja) 2011-07-21
EP2289103A2 (en) 2011-03-02
WO2009137578A3 (en) 2010-03-04
US20090278177A1 (en) 2009-11-12
CN102084484B (zh) 2013-06-05
US8507335B2 (en) 2013-08-13
EP2289103A4 (en) 2013-07-31
TW200952175A (en) 2009-12-16
WO2009137578A2 (en) 2009-11-12
TWI415258B (zh) 2013-11-11
CA2722942A1 (en) 2009-11-12

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