JP2011521416A - 電気活性層の形成方法 - Google Patents
電気活性層の形成方法 Download PDFInfo
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- JP2011521416A JP2011521416A JP2011509729A JP2011509729A JP2011521416A JP 2011521416 A JP2011521416 A JP 2011521416A JP 2011509729 A JP2011509729 A JP 2011509729A JP 2011509729 A JP2011509729 A JP 2011509729A JP 2011521416 A JP2011521416 A JP 2011521416A
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- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007764 slot die coating Methods 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
少なくとも1つの活性領域を有するワークピースを提供するステップと;
有効領域内のワークピース上に電気活性材料を含む液体組成物を堆積して、湿潤層を形成するステップと;
25〜80℃の範囲内に制御された温度および10-6〜1,000Torrの範囲内の減圧下、1〜100分の第1の時間の間、ワークピース上の湿潤層を処理して、部分的に乾燥した層を形成するステップと;
部分的に乾燥した層を100℃を超える温度まで1〜50分の第2の時間の間加熱して、乾燥した層を形成するステップとを含み、
乾燥した層は、活性領域内に実質的に平坦な断面を有する。
以下に説明する実施形態の詳細を扱う前に、一部の用語について定義または説明を行う。
層が液相堆積法によって形成される場合、乾燥した膜は、膜領域全体で均一な厚さを有さないことが多い。これは、基体中の表面不均一性、エッジ効果、湿潤膜全体での蒸発速度の差などによって生じうる。ある実施形態においては、多くの場合でウェル構造と呼ばれる物理的な閉じ込め構造を有するワークピースの上に、液相堆積法によって電気活性材料が塗布される。乾燥した膜は、図1に示されるような不均一な厚さを有する場合がある。追加の層を有する場合もある基体10は、開口部30を画定する20で示される閉じ込め構造を有する。乾燥した電気活性膜を40で示している。この膜の厚さは、基体の面に対して垂直方向で測定される。Eにおける厚さは、Cにおける厚さよりもかなり厚いことが分かる。このような電気活性層の厚さの不均一性によって、デバイス性能に対して悪影響が生じることがある。OLEDにおいては、発光層の不均一性によって、色の変化、効率の低下、および寿命の低下などの望ましくない影響が生じうる。
少なくとも1つの活性領域を有するワークピースを提供するステップと;
活性領域内のワークピースの上に電気活性材料を含む液体組成物を堆積して、湿潤層を形成するステップと;
−25〜80℃の範囲内に制御された温度および10-6〜1,000Torrの範囲内の減圧下、1〜100分の第1の時間の間、ワークピース上の湿潤層を処理することによって、部分的に乾燥した層を形成するステップと;
部分的に乾燥した層を100℃を超える温度まで1〜50分の第2の時間の間加熱して、乾燥した層を形成するステップとをこの順序で含み、
乾燥した層は、活性領域内に実質的に平坦な断面を有する。
アノードと、カソードと、それらの間にある少なくとも1つの電気活性層とを含む少なくとも1つの活性領域を有する電子デバイスであって、電気活性層が、液相堆積によって形成され、活性領域内に実質的に平坦な断面を有する電子デバイスを提供する。
この実施例では、実質的に平坦な断面を有するOLED用途の電気活性膜の製造を示す。以下の材料を使用した:
インジウムスズ酸化物(ITO):180nm
緩衝層=緩衝液1(20nm)、これは導電性ポリマーとポリマーフッ素化スルホン酸との水性分散体である。このような材料は、たとえば、米国特許出願公開第2004/0102577号明細書、米国特許出願公開第2004/0127637号明細書、および米国特許出願公開第2005/0205860号明細書に記載されている。
カソード=LiF/Al(0.5/100nm)
OLEDデバイスは、溶液処理と熱蒸着技術との組み合わせによって製造した。Thin Film Devices,Incのパターン化されたインジウムスズ酸化物(ITO)がコーティングされたガラス基体を使用した。これらのITO基体は、50Ω/□のシート抵抗および80%の光透過率を有するITOがコーティングされたCorning 1737ガラスを主とするものである。標準的なフォトリソグラフィー法を使用してITO基体上にウェルパターンを作製した。このウェルは32ミクロンの幅によって画定された。
実施例1と同じ材料を使用してOLEDデバイスを製造した。印刷後の乾燥ステップを除けば、実施例1と同じ手順を使用してデバイスを製造した。基体に発光層溶液をノズル印刷した直後に、その板を140℃のホットプレート上に30分間置いた。
Claims (15)
- 電気活性材料の層の形成方法であって:
少なくとも1つの活性領域を有するワークピースを提供するステップと;
前記活性領域内の前記ワークピース上に前記電気活性材料を含む液体組成物を堆積して、湿潤層を形成するステップと;
−25〜80℃の範囲内に制御された温度および10-6〜1,000Torrの範囲内の減圧下、1〜100分の第1の時間の間、前記ワークピース上の前記湿潤層を処理して、部分的に乾燥した層を形成するステップと;
前記部分的に乾燥した層を100℃を超える温度まで1〜50分の第2の時間の間加熱して、乾燥した層を形成するステップとを含み、
前記乾燥した層が、前記活性領域内に実質的に平坦な断面を有する、方法。 - 前記乾燥した層が、前記活性領域の90%にわたって±10%未満の厚さのばらつきを有する、請求項1に記載の方法。
- 前記液体組成物が、インクジェット印刷および連続ノズルコーティングからなる群から選択される技術によって堆積される、請求項1に記載の方法。
- 前記ワークピースが複数の活性領域を有する、請求項1に記載の方法。
- 前記電気活性材料が、第1の色に対応するホスト材料と光活性ゲスト材料とを含み、前記液体組成物が前記活性領域の第1の部分内に堆積される、請求項4に記載の方法。
- 第2の色に対応する第2のホスト材料と第2の光活性ゲスト材料とを含む第2の液体組成物が、前記活性領域の第2の部分内に堆積される、請求項5に記載の方法。
- 第3の色に対応する第3のホスト材料と第3の光活性ゲスト材料とを含む第3の液体組成物が、前記活性領域の第3の部分内に堆積される、請求項6に記載の方法。
- 前記電気活性材料が正孔注入材料から実質的になる、請求項1に記載の方法。
- 前記電気活性材料が正孔輸送材料から実質的になる、請求項1に記載の方法。
- 前記ワークピース上の前記湿潤層が、20〜80℃の範囲内の温度、10-2〜10Torrの範囲内の圧力において、5〜25分の時間の間処理される、請求項1に記載の方法。
- 前記ワークピース上の前記湿潤層が、30〜60℃の範囲内の温度、10-2〜1Torrの範囲内の圧力において、5〜15分の時間の間処理される、請求項1に記載の方法。
- 前記ワークピース上の前記湿潤層が、−25〜10℃の範囲内の温度、1〜1000Torrの範囲内の圧力において、5〜25分の時間の間処理される、請求項1に記載の方法。
- 前記ワークピース上の前記湿潤層が、−10〜0℃の範囲内の温度、10〜100Torrの範囲内の圧力において、5〜15分の時間の間処理される、請求項1に記載の方法。
- アノードと、カソードと、それらの間にある電気活性層とを含む少なくとも1つの活性領域を有する電子デバイスであって、前記電気活性層が、液相堆積によって形成され、実質的に平坦な断面を有するデバイス。
- 前記電気活性層が、光活性層、発光層、正孔輸送層、および正孔注入層からなる群から選択される層である、請求項14に記載のデバイス。
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US20110095308A1 (en) | 2011-04-28 |
US8907353B2 (en) | 2014-12-09 |
KR20160021897A (ko) | 2016-02-26 |
JP5596020B2 (ja) | 2014-09-24 |
TW201005813A (en) | 2010-02-01 |
KR20110020814A (ko) | 2011-03-03 |
KR101691773B1 (ko) | 2016-12-30 |
KR101491877B1 (ko) | 2015-02-09 |
US20130299800A1 (en) | 2013-11-14 |
KR20140100590A (ko) | 2014-08-14 |
US8778785B2 (en) | 2014-07-15 |
WO2009140570A3 (en) | 2010-03-04 |
KR20150020735A (ko) | 2015-02-26 |
WO2009140570A2 (en) | 2009-11-19 |
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