JP2011520269A - 回転基板のための非半径方向温度制御のためのシステム - Google Patents
回転基板のための非半径方向温度制御のためのシステム Download PDFInfo
- Publication number
- JP2011520269A JP2011520269A JP2011507684A JP2011507684A JP2011520269A JP 2011520269 A JP2011520269 A JP 2011520269A JP 2011507684 A JP2011507684 A JP 2011507684A JP 2011507684 A JP2011507684 A JP 2011507684A JP 2011520269 A JP2011520269 A JP 2011520269A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- heating
- heating source
- processing volume
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 196
- 238000010438 heat treatment Methods 0.000 claims abstract description 189
- 238000000034 method Methods 0.000 claims abstract description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 239000010453 quartz Substances 0.000 claims description 11
- 238000009529 body temperature measurement Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 20
- 239000007789 gas Substances 0.000 description 19
- 230000000694 effects Effects 0.000 description 17
- 230000008859 change Effects 0.000 description 15
- 238000004093 laser heating Methods 0.000 description 13
- 239000000523 sample Substances 0.000 description 12
- 238000012360 testing method Methods 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- 238000010926 purge Methods 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000005070 sampling Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000112 cooling gas Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- -1 tungsten halogen Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (15)
- 基板を処理するための装置であって、
処理容積部を規定するチャンバー本体と、
前記処理容積部に配置される基板支持部であって、前記基板を回転させるように構成される前記基板支持部と、
複数の位置で前記基板の温度を測定するように構成されるセンサーアセンブリと、
前記処理容積部の方へパルス状エネルギーを提供するように構成される1つまたは複数のパルス加熱要素と
を含む装置。 - 前記処理容積部の方へエネルギーを提供するように構成される主加熱源をさらに含む、請求項1に記載の装置。
- 前記1つまたは複数のパルス加熱要素の周波数、位相、および振幅の少なくとも1つを調節し、前記主加熱源への電力レベルを調節するように構成されるシステムコントローラをさらに含み、前記コントローラは、前記センサーアセンブリを使用して前記基板支持部上で回転されている基板のための温度マップを作成し、前記温度マップに従って1つまたは複数のパルス加熱要素および前記主加熱源を調節するように構成される、請求項2に記載の装置。
- 前記主加熱源は、複数の同心加熱ゾーンに分類される複数の加熱要素を含み、各同心加熱ゾーンは独立して制御され、前記1つまたは複数のパルス加熱要素は1つまたは複数の同心加熱ゾーン内に配置される、請求項3に記載の装置。
- 前記1つまたは複数のパルス加熱要素は1つまたは複数の方位的に制御されるゾーンに分類される、請求項3に記載の装置。
- 前記処理容積部の方へパルス状エネルギーを提供するように構成される補助加熱源をさらに含み、前記パルス状エネルギーの周波数、位相、または振幅は調節可能である、請求項2に記載の装置。
- 前記基板支持部は、エッジ領域の近くで基板を支持するように構成されるエッジリングを含み、前記補助加熱源は前記エッジリングの方へエネルギーを向けるように構成される、請求項6に記載の装置。
- 前記主加熱源および前記1つまたは複数のパルス加熱要素は前記容積部の第1の側に配置され、前記補助加熱源は前記処理容積部の反対側に配置され、前記主加熱源および前記1つまたは複数のパルス状加熱は、処理されている基板の裏側にエネルギーを向けるように構成され、前記補助加熱源は前記基板の表側にエネルギーを向けるように構成される、請求項6に記載の装置。
- 基板を処理するための方法であって、
処理チャンバーの処理容積部に配置された基板支持部上に基板を置くステップと、
前記基板を回転させるステップと、
前記処理容積部に放射エネルギーを向けることによって前記基板を加熱するステップであって、前記放射エネルギーの少なくとも一部が、前記基板の回転速度によって決定される周波数を有するパルス状エネルギーであるステップと
を含む方法。 - 前記基板を加熱するステップは、
主加熱源から前記処理容積部に非パルス状エネルギーを向けるステップと、
1つまたは複数のパルス加熱要素から前記処理容積部にパルス状エネルギーを向けるステップと
を含む、請求項9に記載の方法。 - 前記主加熱源は、各々が独立して制御可能な複数の同心ゾーンを含み、前記1つまたは複数のパルス加熱要素は、1つまたは複数の方位的に制御されるゾーンに分類される、請求項10に記載の方法。
- 複数の位置で前記基板の温度を測定するステップと、
温度測定結果に従って前記1つまたは複数のパルス加熱要素の周波数、位相および振幅の少なくとも1つを調節するステップと
をさらに含む、請求項10に記載の方法。 - 前記基板を加熱しながら補助加熱源から前記基板のエッジ領域を支持するエッジリングを加熱するステップであって、前記補助加熱源は前記処理容積部の方へパルス状エネルギーを提供するように構成されるステップと、
前記エッジリングが回転している間に前記エッジリング上の異なる位置の温度を測定するステップと、
測定された前記エッジリング温度に従って前記補助加熱源の周波数、位相および振幅の少なくとも1つを調節するステップと
をさらに含む、請求項10に記載の方法。 - チャンバー壁、石英窓、および反射体プレートによって規定される処理容積部を有するチャンバー本体であって、前記石英窓および前記反射体プレートは、前記処理容積部の反対側に配置されるチャンバー本体と、
前記処理容積部に配置される基板支持部であって、基板を支持して回転させるように構成される基板支持部と、
前記石英窓の外側に配置されて、前記石英窓を通じて前記処理容積部にエネルギーを向けるように構成される加熱源であって、複数の加熱要素を含み、前記加熱要素の少なくとも一部が、前記処理容積部の方へパルス状エネルギーを提供するように構成されるパルス加熱要素である加熱源と、
前記反射体プレートを貫いて配置されて、前記処理容積部の異なる半径位置に沿って温度を測定するように構成されるセンサーアセンブリと、
前記加熱源からの前記パルス状エネルギーの周波数、位相、および振幅の1つを調節するように構成されるシステムコントローラと
を含み、
前記加熱源の前記複数の加熱要素が複数の同心ゾーンに分類され、前記パルス加熱要素が1つまたは複数の方位的に制御されるゾーンに分類される熱処理チャンバー。 - 前記基板を支持するエッジリングにパルス状エネルギーを向けるように構成される補助加熱要素をさらに含む、請求項14に記載の熱処理チャンバー。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US5016708P | 2008-05-02 | 2008-05-02 | |
US61/050,167 | 2008-05-02 | ||
US5581408P | 2008-05-23 | 2008-05-23 | |
US61/055,814 | 2008-05-23 | ||
PCT/US2009/042538 WO2009135137A2 (en) | 2008-05-02 | 2009-05-01 | System for non radial temperature control for rotating substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011520269A true JP2011520269A (ja) | 2011-07-14 |
JP5591223B2 JP5591223B2 (ja) | 2014-09-17 |
Family
ID=41255865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011507684A Active JP5591223B2 (ja) | 2008-05-02 | 2009-05-01 | 回転基板のための非半径方向温度制御のためのシステム |
Country Status (7)
Country | Link |
---|---|
US (6) | US8249436B2 (ja) |
EP (2) | EP3573092B1 (ja) |
JP (1) | JP5591223B2 (ja) |
KR (3) | KR101623707B1 (ja) |
CN (2) | CN104064499B (ja) |
TW (2) | TWI476836B (ja) |
WO (1) | WO2009135137A2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013074247A (ja) * | 2011-09-29 | 2013-04-22 | Sumitomo Heavy Ind Ltd | レーザアニール装置、及び、レーザアニール方法 |
JP2013074246A (ja) * | 2011-09-29 | 2013-04-22 | Sumitomo Heavy Ind Ltd | レーザアニール装置、レーザアニール方法、及び、ステージ |
JP2017152512A (ja) * | 2016-02-24 | 2017-08-31 | 株式会社Screenホールディングス | 熱処理装置 |
JP2021516866A (ja) * | 2018-03-15 | 2021-07-08 | ジルトロニック アクチエンゲゼルシャフトSiltronic AG | 半導体ウェーハを生産するためのプロセス |
WO2022209903A1 (ja) * | 2021-03-30 | 2022-10-06 | 東京エレクトロン株式会社 | Ledチャック |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1865354B1 (en) * | 2005-03-17 | 2016-03-16 | Hamamatsu Photonics K.K. | Microscopic image capturing device |
US7976634B2 (en) * | 2006-11-21 | 2011-07-12 | Applied Materials, Inc. | Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems |
US8249436B2 (en) | 2008-05-02 | 2012-08-21 | Applied Materials, Inc. | System for non radial temperature control for rotating substrates |
JP5214347B2 (ja) * | 2008-06-24 | 2013-06-19 | 株式会社東芝 | 半導体装置の製造方法および半導体装置の製造装置 |
US9570328B2 (en) * | 2010-06-30 | 2017-02-14 | Applied Materials, Inc. | Substrate support for use with multi-zonal heating sources |
CN103430285B (zh) * | 2011-03-22 | 2016-06-01 | 应用材料公司 | 用于化学气相沉积腔室的衬里组件 |
JP5630379B2 (ja) * | 2011-05-26 | 2014-11-26 | 東京エレクトロン株式会社 | 温度測定装置、温度測定方法、記憶媒体及び熱処理装置 |
CN102886958A (zh) * | 2011-07-20 | 2013-01-23 | 上海申科技术有限公司 | 电加热层压机的非线性加热的方法 |
CN102886968A (zh) * | 2011-07-20 | 2013-01-23 | 上海申科技术有限公司 | 电加热层压机的温度曲线的控制方法 |
US8979087B2 (en) * | 2011-07-29 | 2015-03-17 | Applied Materials, Inc. | Substrate supporting edge ring with coating for improved soak performance |
KR102022718B1 (ko) * | 2011-11-03 | 2019-09-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 급속 열처리 챔버 |
KR101829676B1 (ko) * | 2011-12-29 | 2018-02-20 | 삼성전자주식회사 | 웨이퍼 열 처리 방법 |
US8980767B2 (en) * | 2012-01-13 | 2015-03-17 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
KR101704159B1 (ko) * | 2012-01-26 | 2017-02-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 상부 기판 지지 어셈블리를 갖는 열 처리 챔버 |
US9330949B2 (en) * | 2012-03-27 | 2016-05-03 | SCREEN Holdings Co., Ltd. | Heat treatment apparatus for heating substrate by irradiating substrate with flash of light |
US9960059B2 (en) * | 2012-03-30 | 2018-05-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Honeycomb heaters for integrated circuit manufacturing |
CN104428879B (zh) * | 2012-05-30 | 2018-01-30 | 应用材料公司 | 用于快速热处理的设备及方法 |
US8865602B2 (en) | 2012-09-28 | 2014-10-21 | Applied Materials, Inc. | Edge ring lip |
WO2014065955A1 (en) | 2012-10-24 | 2014-05-01 | Applied Materials, Inc. | Minimal contact edge ring for rapid thermal processing |
US20140264059A1 (en) * | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Light irradiance and thermal measurement in uv and cvd chambers |
CN104124184B (zh) * | 2013-04-24 | 2017-07-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子设备及其控制方法 |
US9196514B2 (en) * | 2013-09-06 | 2015-11-24 | Applied Materials, Inc. | Electrostatic chuck with variable pixilated heating |
CN107342252B (zh) * | 2013-09-30 | 2020-08-11 | 应用材料公司 | 具有封装的光阻隔件的支撑环 |
CN104630735B (zh) * | 2013-11-06 | 2017-12-19 | 北京北方华创微电子装备有限公司 | 温度监控装置及等离子体加工设备 |
WO2015073185A1 (en) * | 2013-11-12 | 2015-05-21 | Applied Materials, Inc. | Pyrometer background elimination |
WO2015138094A1 (en) * | 2014-03-12 | 2015-09-17 | Applied Materials, Inc. | Wafer rotation in a semiconductor chamber |
US10699922B2 (en) * | 2014-07-25 | 2020-06-30 | Applied Materials, Inc. | Light pipe arrays for thermal chamber applications and thermal processes |
DE102014114220A1 (de) * | 2014-09-30 | 2016-03-31 | Osram Opto Semiconductors Gmbh | Verfahren für das Aufwachsen von Halbleiterschichten und Träger zum Aufwachsen von Halbleiterschichten |
JP6361495B2 (ja) * | 2014-12-22 | 2018-07-25 | 東京エレクトロン株式会社 | 熱処理装置 |
KR102323363B1 (ko) * | 2015-06-05 | 2021-11-09 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판 온도 불균일성을 감소시키기 위한 개선된 장치 |
WO2017004050A1 (en) * | 2015-06-29 | 2017-01-05 | Applied Materials, Inc. | Temperature controlled substrate processing |
CN107810073A (zh) | 2015-06-29 | 2018-03-16 | 应用材料公司 | 温度控制的增材制造 |
HUE060525T2 (hu) | 2015-10-09 | 2023-03-28 | Applied Materials Inc | Diódás lézer szelet hevítésre EPI eljárásokhoz |
KR102584138B1 (ko) | 2015-11-09 | 2023-10-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 저부 처리 |
KR102148834B1 (ko) * | 2015-12-30 | 2020-08-28 | 베이징 이타운 세미컨덕터 테크놀로지 컴퍼니 리미티드 | 밀리세컨드 어닐 시스템을 위한 가스 흐름 제어 |
US10020204B2 (en) | 2016-03-10 | 2018-07-10 | Applied Materials, Inc. | Bottom processing |
CN105762075A (zh) * | 2016-05-11 | 2016-07-13 | 上海华虹宏力半导体制造有限公司 | 用于改善器件电学性能的方法以及半导体制造方法 |
KR102527578B1 (ko) * | 2016-05-24 | 2023-05-02 | 삼성전자주식회사 | 기판 가열 방법 |
JP6847199B2 (ja) | 2016-07-22 | 2021-03-24 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | エピの均一性調整を改善するための加熱変調器 |
US10840114B1 (en) * | 2016-07-26 | 2020-11-17 | Raytheon Company | Rapid thermal anneal apparatus and method |
GB2560033A (en) * | 2017-02-28 | 2018-08-29 | Rolls Royce Plc | Apparatus and methods for providing thermal energy to an article |
US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
SG10201705708YA (en) * | 2017-05-26 | 2018-12-28 | Applied Materials Inc | Detector for low temperature transmission pyrometry |
US10655226B2 (en) * | 2017-05-26 | 2020-05-19 | Applied Materials, Inc. | Apparatus and methods to improve ALD uniformity |
KR101977386B1 (ko) * | 2017-06-30 | 2019-05-13 | 무진전자 주식회사 | 웨이퍼 식각 장치 및 이를 사용하는 방법 |
CN111095513B (zh) | 2017-08-18 | 2023-10-31 | 应用材料公司 | 高压高温退火腔室 |
US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
US11177128B2 (en) | 2017-09-12 | 2021-11-16 | Applied Materials, Inc. | Apparatus and methods for manufacturing semiconductor structures using protective barrier layer |
US11222783B2 (en) * | 2017-09-19 | 2022-01-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Using cumulative heat amount data to qualify hot plate used for postexposure baking |
CN117936417A (zh) | 2017-11-11 | 2024-04-26 | 微材料有限责任公司 | 用于高压处理腔室的气体输送系统 |
US11236422B2 (en) * | 2017-11-17 | 2022-02-01 | Lam Research Corporation | Multi zone substrate support for ALD film property correction and tunability |
JP2021503714A (ja) | 2017-11-17 | 2021-02-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高圧処理システムのためのコンデンサシステム |
CN109935532B (zh) * | 2017-12-15 | 2022-05-31 | 上海微电子装备(集团)股份有限公司 | 激光热处理装置和处理方法 |
JP6960344B2 (ja) * | 2018-01-26 | 2021-11-05 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
EP3762962A4 (en) | 2018-03-09 | 2021-12-08 | Applied Materials, Inc. | HIGH PRESSURE ANNEALING PROCESS FOR METAL-BASED MATERIALS |
US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
JP7456951B2 (ja) | 2018-07-05 | 2024-03-27 | ラム リサーチ コーポレーション | 基板処理システムにおける基板支持体の動的温度制御 |
US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
KR20210113426A (ko) * | 2019-02-04 | 2021-09-15 | 어플라이드 머티어리얼스, 인코포레이티드 | 온도 오프셋 및 구역 제어 튜닝 |
DE102019104433A1 (de) | 2019-02-21 | 2020-08-27 | Aixtron Se | CVD-Reaktor mit Mitteln zur lokalen Beeinflussung der Suszeptortemperatur |
CN110707028A (zh) * | 2019-10-18 | 2020-01-17 | 长江存储科技有限责任公司 | 晶圆热处理装置及晶圆热处理方法 |
US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
US20230017768A1 (en) * | 2021-07-16 | 2023-01-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for use with a substrate chamber |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1197371A (ja) * | 1997-09-18 | 1999-04-09 | Tokyo Electron Ltd | 熱処理装置 |
JP2002100582A (ja) * | 2000-09-26 | 2002-04-05 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
JP2003077857A (ja) * | 2001-09-03 | 2003-03-14 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
JP2005509281A (ja) * | 2001-11-07 | 2005-04-07 | マットソン テクノロジイ インコーポレイテッド | 電磁エネルギーの吸収を最適化することにより半導体ウェハを加熱するシステムと方法 |
WO2007114987A2 (en) * | 2006-03-30 | 2007-10-11 | Applied Materials, Inc. | Adaptive control method for rapid thermal processing of a substrate |
JP2009231662A (ja) * | 2008-03-25 | 2009-10-08 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
Family Cites Families (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5155336A (en) * | 1990-01-19 | 1992-10-13 | Applied Materials, Inc. | Rapid thermal heating apparatus and method |
US5474381A (en) * | 1993-11-30 | 1995-12-12 | Texas Instruments Incorporated | Method for real-time semiconductor wafer temperature measurement based on a surface roughness characteristic of the wafer |
US5755511A (en) * | 1994-12-19 | 1998-05-26 | Applied Materials, Inc. | Method and apparatus for measuring substrate temperatures |
DE19748088A1 (de) * | 1997-10-30 | 1999-05-12 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zum Erkennen einer Fehllage einer Halbleiterscheibe |
WO1999023691A2 (en) * | 1997-11-03 | 1999-05-14 | Asm America, Inc. | Improved low mass wafer support system |
US6005226A (en) | 1997-11-24 | 1999-12-21 | Steag-Rtp Systems | Rapid thermal processing (RTP) system with gas driven rotating substrate |
US6222990B1 (en) * | 1997-12-03 | 2001-04-24 | Steag Rtp Systems | Heating element for heating the edges of wafers in thermal processing chambers |
US6079874A (en) * | 1998-02-05 | 2000-06-27 | Applied Materials, Inc. | Temperature probes for measuring substrate temperature |
US6188044B1 (en) * | 1998-04-27 | 2001-02-13 | Cvc Products, Inc. | High-performance energy transfer system and method for thermal processing applications |
US6190040B1 (en) * | 1999-05-10 | 2001-02-20 | Sensarray Corporation | Apparatus for sensing temperature on a substrate in an integrated circuit fabrication tool |
TW425635B (en) * | 1999-08-23 | 2001-03-11 | Promos Technologies Inc | Rapid thermal processing method and its device |
JP3988338B2 (ja) | 1999-10-07 | 2007-10-10 | ウシオ電機株式会社 | 光照射式急速加熱処理装置の制御装置 |
US6616332B1 (en) * | 1999-11-18 | 2003-09-09 | Sensarray Corporation | Optical techniques for measuring parameters such as temperature across a surface |
US6476362B1 (en) * | 2000-09-12 | 2002-11-05 | Applied Materials, Inc. | Lamp array for thermal processing chamber |
US6492625B1 (en) * | 2000-09-27 | 2002-12-10 | Emcore Corporation | Apparatus and method for controlling temperature uniformity of substrates |
US6970644B2 (en) | 2000-12-21 | 2005-11-29 | Mattson Technology, Inc. | Heating configuration for use in thermal processing chambers |
US6770146B2 (en) | 2001-02-02 | 2004-08-03 | Mattson Technology, Inc. | Method and system for rotating a semiconductor wafer in processing chambers |
US6800833B2 (en) * | 2002-03-29 | 2004-10-05 | Mariusch Gregor | Electromagnetically levitated substrate support |
US6849831B2 (en) * | 2002-03-29 | 2005-02-01 | Mattson Technology, Inc. | Pulsed processing semiconductor heating methods using combinations of heating sources |
US6803297B2 (en) * | 2002-09-20 | 2004-10-12 | Applied Materials, Inc. | Optimal spike anneal ambient |
WO2004038777A1 (ja) * | 2002-10-24 | 2004-05-06 | Tokyo Electron Limited | 熱処理装置 |
US6927169B2 (en) * | 2002-12-19 | 2005-08-09 | Applied Materials Inc. | Method and apparatus to improve thickness uniformity of surfaces for integrated device manufacturing |
US6916744B2 (en) * | 2002-12-19 | 2005-07-12 | Applied Materials, Inc. | Method and apparatus for planarization of a material by growing a sacrificial film with customized thickness profile |
US7026581B2 (en) * | 2003-08-22 | 2006-04-11 | Axcelis Technologies, Inc. | Apparatus for positioning an elevator tube |
US20080090309A1 (en) * | 2003-10-27 | 2008-04-17 | Ranish Joseph M | Controlled annealing method |
US8536492B2 (en) * | 2003-10-27 | 2013-09-17 | Applied Materials, Inc. | Processing multilayer semiconductors with multiple heat sources |
US7127367B2 (en) * | 2003-10-27 | 2006-10-24 | Applied Materials, Inc. | Tailored temperature uniformity |
US6855916B1 (en) | 2003-12-10 | 2005-02-15 | Axcelis Technologies, Inc. | Wafer temperature trajectory control method for high temperature ramp rate applications using dynamic predictive thermal modeling |
US8658945B2 (en) * | 2004-02-27 | 2014-02-25 | Applied Materials, Inc. | Backside rapid thermal processing of patterned wafers |
KR100856432B1 (ko) * | 2004-06-30 | 2008-09-04 | 인텔 코포레이션 | 웨이퍼 온도 제어 방법, 장치, 시스템 및 제품 |
US20060286807A1 (en) * | 2005-06-16 | 2006-12-21 | Jack Hwang | Use of active temperature control to provide emmisivity independent wafer temperature |
US20060004493A1 (en) * | 2004-06-30 | 2006-01-05 | Jack Hwang | Use of active temperature control to provide emmisivity independent wafer temperature |
JP4925571B2 (ja) * | 2004-08-09 | 2012-04-25 | アプライド マテリアルズ インコーポレイテッド | 基板の熱的性質判定方法及び熱処理条件の決定方法 |
US7283734B2 (en) * | 2004-08-24 | 2007-10-16 | Fujitsu Limited | Rapid thermal processing apparatus and method of manufacture of semiconductor device |
US7509035B2 (en) * | 2004-09-27 | 2009-03-24 | Applied Materials, Inc. | Lamp array for thermal processing exhibiting improved radial uniformity |
US7112763B2 (en) * | 2004-10-26 | 2006-09-26 | Applied Materials, Inc. | Method and apparatus for low temperature pyrometry useful for thermally processing silicon wafers |
US7700376B2 (en) * | 2005-04-06 | 2010-04-20 | Applied Materials, Inc. | Edge temperature compensation in thermal processing particularly useful for SOI wafers |
US20060240680A1 (en) * | 2005-04-25 | 2006-10-26 | Applied Materials, Inc. | Substrate processing platform allowing processing in different ambients |
DE102005024118B4 (de) * | 2005-05-25 | 2009-05-07 | Mattson Thermal Products Gmbh | Vorrichtung und Verfahren zur Reduktion von Partikeln bei der thermischen Behandlung rotierender Substrate |
US8104951B2 (en) | 2006-07-31 | 2012-01-31 | Applied Materials, Inc. | Temperature uniformity measurements during rapid thermal processing |
US7378618B1 (en) * | 2006-12-14 | 2008-05-27 | Applied Materials, Inc. | Rapid conductive cooling using a secondary process plane |
US7860379B2 (en) * | 2007-01-15 | 2010-12-28 | Applied Materials, Inc. | Temperature measurement and control of wafer support in thermal processing chamber |
US8249436B2 (en) | 2008-05-02 | 2012-08-21 | Applied Materials, Inc. | System for non radial temperature control for rotating substrates |
US20110061810A1 (en) * | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
US20140270731A1 (en) * | 2013-03-12 | 2014-09-18 | Applied Materials, Inc. | Thermal management apparatus for solid state light source arrays |
US9754807B2 (en) * | 2013-03-12 | 2017-09-05 | Applied Materials, Inc. | High density solid state light source array |
-
2009
- 2009-05-01 US US12/434,239 patent/US8249436B2/en active Active
- 2009-05-01 KR KR1020107026934A patent/KR101623707B1/ko active IP Right Grant
- 2009-05-01 TW TW102100272A patent/TWI476836B/zh active
- 2009-05-01 KR KR1020177016195A patent/KR101892467B1/ko active IP Right Grant
- 2009-05-01 EP EP19183675.8A patent/EP3573092B1/en active Active
- 2009-05-01 TW TW098114659A patent/TWI395272B/zh active
- 2009-05-01 WO PCT/US2009/042538 patent/WO2009135137A2/en active Application Filing
- 2009-05-01 CN CN201410183428.4A patent/CN104064499B/zh active Active
- 2009-05-01 KR KR1020167012831A patent/KR101749044B1/ko active IP Right Grant
- 2009-05-01 JP JP2011507684A patent/JP5591223B2/ja active Active
- 2009-05-01 CN CN200980115810.9A patent/CN102017101B/zh active Active
- 2009-05-01 EP EP09739939.8A patent/EP2289095B1/en active Active
-
2012
- 2012-07-13 US US13/548,858 patent/US8724977B2/en active Active
-
2014
- 2014-04-08 US US14/247,816 patent/US9728471B2/en active Active
-
2017
- 2017-06-29 US US15/637,944 patent/US10741457B2/en active Active
-
2020
- 2020-08-10 US US16/989,543 patent/US11942381B2/en active Active
-
2023
- 2023-08-24 US US18/237,669 patent/US20230402331A1/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1197371A (ja) * | 1997-09-18 | 1999-04-09 | Tokyo Electron Ltd | 熱処理装置 |
JP2002100582A (ja) * | 2000-09-26 | 2002-04-05 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
JP2003077857A (ja) * | 2001-09-03 | 2003-03-14 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
JP2005509281A (ja) * | 2001-11-07 | 2005-04-07 | マットソン テクノロジイ インコーポレイテッド | 電磁エネルギーの吸収を最適化することにより半導体ウェハを加熱するシステムと方法 |
WO2007114987A2 (en) * | 2006-03-30 | 2007-10-11 | Applied Materials, Inc. | Adaptive control method for rapid thermal processing of a substrate |
JP2009231662A (ja) * | 2008-03-25 | 2009-10-08 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013074247A (ja) * | 2011-09-29 | 2013-04-22 | Sumitomo Heavy Ind Ltd | レーザアニール装置、及び、レーザアニール方法 |
JP2013074246A (ja) * | 2011-09-29 | 2013-04-22 | Sumitomo Heavy Ind Ltd | レーザアニール装置、レーザアニール方法、及び、ステージ |
JP2017152512A (ja) * | 2016-02-24 | 2017-08-31 | 株式会社Screenホールディングス | 熱処理装置 |
JP2021516866A (ja) * | 2018-03-15 | 2021-07-08 | ジルトロニック アクチエンゲゼルシャフトSiltronic AG | 半導体ウェーハを生産するためのプロセス |
JP7062078B2 (ja) | 2018-03-15 | 2022-05-02 | ジルトロニック アクチエンゲゼルシャフト | 半導体ウェーハを生産するためのプロセス |
WO2022209903A1 (ja) * | 2021-03-30 | 2022-10-06 | 東京エレクトロン株式会社 | Ledチャック |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5591223B2 (ja) | 回転基板のための非半径方向温度制御のためのシステム | |
US7860379B2 (en) | Temperature measurement and control of wafer support in thermal processing chamber | |
US11171023B2 (en) | Diode laser for wafer heating for EPI processes | |
US9449858B2 (en) | Transparent reflector plate for rapid thermal processing chamber | |
US8222574B2 (en) | Temperature measurement and control of wafer support in thermal processing chamber | |
JP6258334B2 (ja) | 改善されたエッジリングリップ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120501 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20131023 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131029 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140128 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140701 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140729 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5591223 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |