JP2011520262A - 改善された、ポリマーで被覆されたカーボンナノチューブの近赤外光活性デバイス - Google Patents
改善された、ポリマーで被覆されたカーボンナノチューブの近赤外光活性デバイス Download PDFInfo
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- JP2011520262A JP2011520262A JP2011507555A JP2011507555A JP2011520262A JP 2011520262 A JP2011520262 A JP 2011520262A JP 2011507555 A JP2011507555 A JP 2011507555A JP 2011507555 A JP2011507555 A JP 2011507555A JP 2011520262 A JP2011520262 A JP 2011520262A
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Classifications
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- H—ELECTRICITY
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Abstract
Description
本発明は、米国夜間視界および電子センサー理事会(United states army night vision and electronic sensors Directorate)の契約番号DAAB07-01-D-G602から政府の支援を受けた。米国政府は本発明の一定の権利を有する。
本出願は、2008年5月1日に出願された米国仮出願第61/049594号および2008年10月31日に出願された米国仮出願第61/110220号の優先権を米国特許法第35編第119条で主張し、これらの開示はその全体が参照により本明細書に援用される。本出願は、2005年11月2日に出願された米国特許出願第11/263865号および2009年1月9日に出願された米国特許出願第12/351378号の一部継続出願であり、これらの開示はその全体が参照により本明細書に援用される。
製造されたままのカーボンナノチューブは、非常に凝集しており、束になっている。効率的な光学吸収および励起子の分裂を得るために、ならびに励起子消光を防ぐために、チューブはばらばらになっていなくてはならない。これは、知られているポリマーで被覆する方法を通してなされる。カーボンナノチューブをポリマーおよび適切な溶媒の溶液中に入れ、カーボンナノチューブを高電力ホーンソニケーター(horn sonicator)(セルディスメンブレータ(cell dismembrator))を使用して分離する。適切なポリマーが使用される場合(他にもある中で、様々なポリ-チオフェンポリマー、ポリ-フェニレンビニレンポリマー、およびポリ-フルオレンポリマー誘導体)、ポリマーは、カーボンナノチューブとポリマーの可溶な複合体を作る、ポリマーの可溶性側基で被覆する。ポリマーの被覆の主な目的は、個々のナノチューブを懸濁させることである。PW-CNTとドナー-アクセプターヘテロ接合を形成できる別の物質がデバイス中に存在する限り、励起子の分裂を行うために、カーボンナノチューブとドナー-アクセプターヘテロ接合を形成するポリマーが、被覆物質のために必要なわけではない。
密度勾配超遠心分離法を使用する、Arnoldら、Nature Nanotech、1: 60-65(2006年)の方法を、半伝導性CNTを単離するために使用する。商業的に利用可能なCNTパウダーを、1:4のドデシル硫酸ナトリウムとコール酸ナトリウム(2%界面活性剤)との混合物と一緒に、超音波処理によって水中に懸濁する。ナノチューブの懸濁液を、その後、イオジキサノール(iodixanol)密度勾配に載せ、遠心分離し、浮遊密度によってナノチューブを分類する。密度勾配の分画後、イオジキサノールを、界面活性剤溶液中の透析によって除去する。好適な有機半導体は、当分野においてよく知られており、数多くの供給業者から商業的に入手可能である。
0.7〜1.1nmの範囲の直径を有する、原料のHiPCO単層カーボンナノチューブ(Carbon Nanotechnologies Inc.から)(10mg)を、10mlの2%(w/v)コール酸ナトリウム(Sigma-Aldrich、995)と水中で混合した。混合物を、ホーンプローブウルトラソニケーター(horn probe ultrasonicator)を使用して、15分間超音波バスで均質化した。単層カーボンナノチューブの粗い凝集体および大きな束を、その後、超遠心分離(15000g、12時間)を介して除去した。得られた懸濁液(100μl)の一定分量を、Al2O3膜(0.02μmの細孔、Whatman Inc.)上の真空濾過を介して濾過した。ナノチューブフィルムを、その後、指圧で膜中にPDMSを押圧することによって、平面のPDMSのスタンプに移動した。フィルムを、その後、AgでコートされたITO(酸化インジウムスズ)上の100nmのPTCDA(3,4,9,10-ペリレンテトラカルボン酸二無水物)からなる基材の上に押し付けた(100N-cm2、60秒、室温、大気圧)。PTCDAおよびAgを、0.15nm/sの速度で、1×10-7Torr真空中のVTEによって堆積した。試験を周囲中で行い、AM1.5Gフィルターを付加したキセノンランプを、太陽のスペクトルを近似するために利用した。較正されたフォトダイオードを、光強度を決定するために利用した。
一実施形態において、実質的に半伝導性または混合されたSWNTの層を、透明アノードにPDMSを押し付けることによって移動する。有機アクセプターの溶液中の、実質的に半伝導性のSWNTの懸濁液を、SWNT層の上にスピンキャストする。アクセプター層、および任意の電子輸送ならびに/または励起子ブロッキング層を、その後、堆積し、続けてカソード層を堆積する。
Claims (26)
- 第一の電極;
第二の電極;
以下:
第一の電極の上部に形成される、光活性ポリマーで被覆されたカーボンナノチューブを含む第一のドナー物質を含む、第一の有機光活性層;
第一の有機光活性物質層の上部に形成される、第一のアクセプター物質を含む、第二の有機光活性層; および
第一と第二の有機光活性物質層の間に配置される、1つまたは複数の追加の有機光活性物質であって、第一のアクセプター物質に対するドナーとして、または第一のドナー物質に対するアクセプターとして働く、追加の有機光活性物質;
を含む、第一の電極と第二の電極との間に配置され、かつ第一の電極および第二の電極と電気的に接続された光活性領域;
を含むデバイス。 - 前記1つまたは複数の追加の有機光活性物質層が、そこを通る複数の開口部を有する単一の層を含む、請求項1に記載のデバイス。
- 前記第一の有機光活性物質層が、前記開口部を通して、第二の有機光活性物質層と直接接触する、請求項2に記載のデバイス。
- 前記1つまたは複数の追加の有機光活性物質層が、複数の島を有する不連続層を含む、請求項1に記載のデバイス。
- 前記第一の有機光活性物質層が、島の中間で、第二の有機光活性物質層と直接接触する、請求項1に記載のデバイス。
- 前記1つまたは複数の追加の有機光活性物質層が、小分子の物質を含む、請求項1に記載のデバイス。
- 前記小分子の物質が、600nmから900nmの波長帯にわたって、少なくとも5×104cm-1の吸収係数を有する、請求項6に記載のデバイス。
- 前記小分子の物質のHOMOが、第一のドナー物質のHOMOより高い0.16eVを超えない、請求項7に記載のデバイス。
- 前記小分子の物質のバンドギャップが、第一のドナー物質のバンドギャップより小さい、請求項7に記載のデバイス。
- 前記小分子の物質が、1×10-9cm2/Vs未満の正孔移動度、および600nmから900nmの波長帯にわたって、少なくとも5×104cm-1の吸収係数を有する、請求項7に記載のデバイス。
- 前記小分子の物質が、スズ(II)フタロシアニン(SnPc)および鉛フタロシアニン(PbPc)から選択される物質を含む、請求項10に記載のデバイス。
- 前記1つまたは複数の有機光活性物質層のうちの少なくとも1つが、小分子の物質および第一のアクセプター物質の共堆積された層を含む、請求項6に記載のデバイス。
- 前記第一の電極が、透明ポリマー電極物質から形成される、請求項1に記載のデバイス。
- 前記第一の電極が、酸化インジウムスズである、請求項1に記載のデバイス。
- 前記酸化インジウムスズが、250から400℃の間で、空気中でアニールされた、請求項14に記載のデバイス。
- 前記酸化インジウムスズが、300℃で、約10〜30分間、空気中でアニールされた、請求項14に記載のデバイス。
- 前記アクセプター物質が、約100〜140nmの厚みを有するC60である、請求項1に記載のデバイス。
- 前記ポリマーで被覆されたカーボンナノチューブが、実質的に半伝導性の、ポリマーで被覆された単層カーボンナノチューブである、請求項1に記載のデバイス。
- 前記ポリマーで被覆された単層カーボンナノチューブが、光活性ポリマーで被覆される、請求項18に記載のデバイス。
- 前記ポリマーで被覆された単層カーボンナノチューブが、約400nmから1400nmの範囲の光の吸収で励起子を作る、請求項18に記載のデバイス。
- 第二の有機光活性物質層と第二の電極との間に備えられる、励起子ブロッキング層をさらに含む、請求項1に記載のデバイス。
- 第一の有機光活性物質層と第一の電極との間に備えられる、励起子ブロッキング層をさらに含む、請求項1に記載のデバイス。
- 第一の有機光活性物質層と第一の電極との間に備えられる、電子ブロッキング層をさらに含む、請求項1に記載のデバイス。
- 前記電子ブロッキング層が、SiO2、PFOまたはNiOのうちの1つから形成される、請求項23に記載のデバイス。
- 前記第一のアクセプター物質層が、C60、[84]PCBM([6,6]-フェニルC84酪酸メチルエステル)、F16-CuPc、PTCBI、PTCDA、ポリ(ベンズイミダゾベンゾフェナントロリン)、TCNQ(7,7,8,8-テトラシアノキノジメタン)、およびF4-TCNQ(テトラフルオロテトラシアノキノジメタン)のうちの1つから形成される、請求項1に記載のデバイス。
- 前記第一の有機光活性物質層が、バルクのヘテロ接合である、請求項1に記載のデバイス。
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AU2009297059B2 (en) | 2014-07-17 |
EP2272097A2 (en) | 2011-01-12 |
US8017863B2 (en) | 2011-09-13 |
TW201004008A (en) | 2010-01-16 |
KR20110014173A (ko) | 2011-02-10 |
HK1156148A1 (en) | 2012-06-01 |
CN102057499B (zh) | 2014-08-27 |
WO2010036397A3 (en) | 2010-06-10 |
CN102057499A (zh) | 2011-05-11 |
WO2010036397A2 (en) | 2010-04-01 |
AU2009297059A1 (en) | 2010-04-01 |
US20090267060A1 (en) | 2009-10-29 |
JP5529115B2 (ja) | 2014-06-25 |
EP2272097A4 (en) | 2012-07-25 |
CA2723115A1 (en) | 2010-04-01 |
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