JP2011519162A5 - - Google Patents

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JP2011519162A5
JP2011519162A5 JP2011506258A JP2011506258A JP2011519162A5 JP 2011519162 A5 JP2011519162 A5 JP 2011519162A5 JP 2011506258 A JP2011506258 A JP 2011506258A JP 2011506258 A JP2011506258 A JP 2011506258A JP 2011519162 A5 JP2011519162 A5 JP 2011519162A5
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phosphor
peak wavelength
led
matrix material
light
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JP2011506258A
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JP5535196B2 (ja
JP2011519162A (ja
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JP2011506258A 2008-04-25 2009-04-08 分離された波長変換材料を有する半導体発光素子およびこれを形成する方法 Active JP5535196B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US4782408P 2008-04-25 2008-04-25
US61/047,824 2008-04-25
US12/251,993 2008-10-15
US12/251,993 US20090039375A1 (en) 2007-08-07 2008-10-15 Semiconductor light emitting devices with separated wavelength conversion materials and methods of forming the same
PCT/US2009/002193 WO2009131627A1 (en) 2008-04-25 2009-04-08 Semiconductor light emitting devices with separated wavelength conversion materials and methods of forming the same

Publications (3)

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JP2011519162A JP2011519162A (ja) 2011-06-30
JP2011519162A5 true JP2011519162A5 (https=) 2012-08-30
JP5535196B2 JP5535196B2 (ja) 2014-07-02

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JP2011506258A Active JP5535196B2 (ja) 2008-04-25 2009-04-08 分離された波長変換材料を有する半導体発光素子およびこれを形成する方法

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US (1) US20090039375A1 (https=)
EP (1) EP2279535B1 (https=)
JP (1) JP5535196B2 (https=)
KR (1) KR20100135310A (https=)
CN (1) CN102057507B (https=)
WO (1) WO2009131627A1 (https=)

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