JP6595044B2 - ラミネートフィルム、ラミネート構造及びその製造方法 - Google Patents
ラミネートフィルム、ラミネート構造及びその製造方法 Download PDFInfo
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- JP6595044B2 JP6595044B2 JP2018102950A JP2018102950A JP6595044B2 JP 6595044 B2 JP6595044 B2 JP 6595044B2 JP 2018102950 A JP2018102950 A JP 2018102950A JP 2018102950 A JP2018102950 A JP 2018102950A JP 6595044 B2 JP6595044 B2 JP 6595044B2
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- H—ELECTRICITY
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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- H10H20/80—Constructional details
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- H—ELECTRICITY
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
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- H—ELECTRICITY
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24851—Intermediate layer is discontinuous or differential
- Y10T428/2486—Intermediate layer is discontinuous or differential with outer strippable or release layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
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Description
Claims (17)
- フレキシブル支持フィルムを用意する工程と、
少なくとも複数の個別の光学素子を形成するよう、別個の基板上の複数の発光デバイスの位置に対応するパターンに従って前記フレキシブル支持フィルムの表面に1つ以上の層を付加する工程であり、前記個別の光学素子は、前記フレキシブル支持フィルムに対してよりも前記発光デバイスに対して実質的に高い粘着力を有する、工程と、
前記複数の個別の光学素子を備えた前記フレキシブル支持フィルムを、接着剤なしで、前記別個の基板上の前記発光デバイスの上に配置する工程と、
前記個別の光学素子間にある前記フレキシブル支持フィルムを前記別個の基板の方に引き寄せるように真空を適用し、それにより、前記個別の光学素子を前記発光デバイス上に推し進める力を印加する工程と、
この積層構造を加熱して前記個別の光学素子を前記複数の発光デバイスに貼り付ける工程と、
前記複数の発光デバイスに貼り付けられた前記複数の光学素子を残して前記フレキシブル支持フィルムを除去する工程と、
を有する発光デバイスの製造方法。 - 前記光学素子は波長変換素子を含む、請求項1に記載の発光デバイスの製造方法。
- 前記1つ以上の層は導電性要素の層を含む、請求項1に記載の発光デバイスの製造方法。
- 前記1つ以上の層は、熱伝導を高める材料を含む、請求項1に記載の発光デバイスの製造方法。
- 前記1つ以上の層は反射性材料の層を含む、請求項1に記載の発光デバイスの製造方法。
- 各光学素子は複数の蛍光体素子を含む、請求項1に記載の発光デバイスの製造方法。
- フレキシブル支持フィルムと、
前記フレキシブル支持フィルム上の1つ以上のラミネート層であり、該ラミネート層のうちの少なくとも1つの層が、別個の基板上の複数の発光デバイスの位置に対応するパターンに従って前記フレキシブル支持フィルム上に配置された複数の個別の光学素子を含み、前記個別の光学素子は、前記フレキシブル支持フィルムに対してよりも前記発光デバイスに対して実質的に高い粘着力を有し、前記複数の個別の光学素子は、接着剤層の使用なしで前記複数の光学素子が前記複数の発光デバイスに真空ラミネートされた後に前記光学素子へのダメージなく前記フレキシブル支持フィルムが前記複数の光学素子から除去されることを可能にする低い粘着力で、前記フレキシブル支持フィルムの表面に接着されている、1つ以上のラミネート層と
を有する、
ラミネートフィルム。 - 前記フレキシブル支持フィルムの反対側で前記複数の光学素子を覆うカバーフィルム層、を含む請求項7に記載のラミネートフィルム。
- 前記光学素子は波長変換素子を含む、請求項7に記載のラミネートフィルム。
- 前記光学素子は蛍光体−ガラス素子を含む、請求項7に記載のラミネートフィルム。
- 前記光学素子の各々は複数の蛍光体素子を含む、請求項7に記載のラミネートフィルム。
- 前記ラミネート層のうちの少なくとも1つは伝導要素の層を含み、該伝導要素は電気伝導要素又は熱伝導要素のうちの少なくとも一方を含む、請求項7に記載のラミネートフィルム。
- 前記ラミネート層のうちの少なくとも1つは反射性材料の層を含む、請求項7に記載のラミネートフィルム。
- 複数の発光デバイスを含むタイル;及び
ラミネートフィルムであり、
フレキシブル支持フィルムと、
前記タイル上の前記複数の発光デバイスの位置に対応する位置で前記フレキシブル支持フィルムの表面に配置された複数の個別の光学素子であり、当該個別の光学素子は、前記フレキシブル支持フィルムに対してよりも前記発光デバイスに対して実質的に高い粘着力を有し、当該複数の個別の光学素子は、接着剤層の使用なしで当該複数の光学素子が前記複数の発光デバイスに真空ラミネートされた後に当該光学素子へのダメージなく前記フレキシブル支持フィルムが当該複数の光学素子から除去されることを可能にする低い粘着力で、前記フレキシブル支持フィルムの前記表面に接着されている、複数の個別の光学素子と、
を含むラミネートフィルム;
を有するラミネート構造。 - 前記光学素子は波長変換素子を含む、請求項14に記載のラミネート構造。
- 前記光学素子の各々は複数の蛍光体素子を含む、請求項14に記載のラミネート構造。
- 前記ラミネートフィルムは、電気伝導層、熱伝導層、反射層及びカバー層のうちの少なくとも1つを含む、請求項14に記載のラミネート構造。
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| Application Number | Priority Date | Filing Date | Title |
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| US40718010P | 2010-10-27 | 2010-10-27 | |
| US61/407,180 | 2010-10-27 |
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| JP2013535553A Division JP2013541220A (ja) | 2010-10-27 | 2011-10-20 | 発光デバイスの製造用のラミネート支持フィルム、及びその製造方法 |
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| JP2018160678A JP2018160678A (ja) | 2018-10-11 |
| JP6595044B2 true JP6595044B2 (ja) | 2019-10-23 |
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| JP2018102950A Active JP6595044B2 (ja) | 2010-10-27 | 2018-05-30 | ラミネートフィルム、ラミネート構造及びその製造方法 |
| JP2019173665A Active JP6883632B2 (ja) | 2010-10-27 | 2019-09-25 | 発光デバイスを製造する方法 |
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| US (1) | US9351348B2 (ja) |
| EP (1) | EP2633554A1 (ja) |
| JP (3) | JP2013541220A (ja) |
| KR (1) | KR101909299B1 (ja) |
| CN (1) | CN103180945B (ja) |
| TW (1) | TWI560400B (ja) |
| WO (1) | WO2012056378A1 (ja) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014075527A (ja) * | 2012-10-05 | 2014-04-24 | Nippon Telegr & Teleph Corp <Ntt> | 半導体素子構造およびその作製法 |
| US9299687B2 (en) | 2012-10-05 | 2016-03-29 | Bridgelux, Inc. | Light-emitting assemblies comprising an array of light-emitting diodes having an optimized lens configuration |
| DE102012109806A1 (de) * | 2012-10-15 | 2014-04-17 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauelement |
| JP6713720B2 (ja) * | 2013-08-30 | 2020-06-24 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ及びそれを含む車両用照明装置 |
| US20160131328A1 (en) * | 2014-11-07 | 2016-05-12 | Lighthouse Technologies Limited | Indoor smd led equipped for outdoor usage |
| CN106449951B (zh) * | 2016-11-16 | 2019-01-04 | 厦门市三安光电科技有限公司 | 一种发光二极管封装结构的制作方法 |
| WO2019003775A1 (ja) * | 2017-06-29 | 2019-01-03 | 京セラ株式会社 | 回路基板およびこれを備える発光装置 |
| US11022791B2 (en) * | 2018-05-18 | 2021-06-01 | Facebook Technologies, Llc | Assemblies of anisotropic optical elements and methods of making |
| JP7362132B2 (ja) * | 2018-05-18 | 2023-10-17 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシー | 一段階フィルム積層によるledの製造方法 |
| US11527684B2 (en) * | 2020-12-04 | 2022-12-13 | Lumileds Llc | Patterned downconverter and adhesive film for micro-LED, mini-LED downconverter mass transfer |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1522145A (en) | 1974-11-06 | 1978-08-23 | Marconi Co Ltd | Light emissive diode displays |
| JP4496774B2 (ja) | 2003-12-22 | 2010-07-07 | 日亜化学工業株式会社 | 半導体装置の製造方法 |
| US20070267646A1 (en) * | 2004-06-03 | 2007-11-22 | Philips Lumileds Lighting Company, Llc | Light Emitting Device Including a Photonic Crystal and a Luminescent Ceramic |
| US7553683B2 (en) | 2004-06-09 | 2009-06-30 | Philips Lumiled Lighting Co., Llc | Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices |
| US7352011B2 (en) * | 2004-11-15 | 2008-04-01 | Philips Lumileds Lighting Company, Llc | Wide emitting lens for LED useful for backlighting |
| JP4615981B2 (ja) | 2004-12-08 | 2011-01-19 | スタンレー電気株式会社 | 発光ダイオード及びその製造方法 |
| TWI389337B (zh) * | 2005-05-12 | 2013-03-11 | 松下電器產業股份有限公司 | 發光裝置與使用其之顯示裝置及照明裝置,以及發光裝置之製造方法 |
| JP2007019096A (ja) * | 2005-07-05 | 2007-01-25 | Toyoda Gosei Co Ltd | 発光装置及びその製造方法 |
| US7344952B2 (en) | 2005-10-28 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Laminating encapsulant film containing phosphor over LEDs |
| JP2007150233A (ja) * | 2005-11-02 | 2007-06-14 | Trion:Kk | 色温度可変発光デバイス |
| CN101427358B (zh) * | 2006-04-25 | 2012-07-18 | 旭硝子株式会社 | 半导体树脂模塑用脱模膜 |
| US8141384B2 (en) * | 2006-05-03 | 2012-03-27 | 3M Innovative Properties Company | Methods of making LED extractor arrays |
| DE102006024165A1 (de) * | 2006-05-23 | 2007-11-29 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Optoelektronischer Halbleiterchip mit einem Wellenlängenkonversionsstoff sowie optoelektronisches Halbleiterbauelement mit einem solchen Halbleiterchip und Verfahren zur Herstellung des optoelektronischen Halbleiterchips |
| EP2033236A4 (en) * | 2006-06-12 | 2014-10-22 | 3M Innovative Properties Co | LED DEVICE WITH RE-ESTIMATING SEMICONDUCTOR CONSTRUCTION AND OPTICAL ELEMENT |
| US9061450B2 (en) * | 2007-02-12 | 2015-06-23 | Cree, Inc. | Methods of forming packaged semiconductor light emitting devices having front contacts by compression molding |
| JPWO2008105527A1 (ja) | 2007-03-01 | 2010-06-03 | Necライティング株式会社 | Led装置及び照明装置 |
| JP5080881B2 (ja) * | 2007-06-27 | 2012-11-21 | ナミックス株式会社 | 発光ダイオードチップの封止体の製造方法 |
| US7652301B2 (en) * | 2007-08-16 | 2010-01-26 | Philips Lumileds Lighting Company, Llc | Optical element coupled to low profile side emitting LED |
| KR101383357B1 (ko) * | 2007-08-27 | 2014-04-10 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 그 제조방법 |
| US20090140279A1 (en) * | 2007-12-03 | 2009-06-04 | Goldeneye, Inc. | Substrate-free light emitting diode chip |
| US7625104B2 (en) * | 2007-12-13 | 2009-12-01 | Philips Lumileds Lighting Company, Llc | Light emitting diode for mounting to a heat sink |
| CN100483762C (zh) * | 2008-02-25 | 2009-04-29 | 鹤山丽得电子实业有限公司 | 一种发光二极管器件的制造方法 |
| JP2009229507A (ja) * | 2008-03-19 | 2009-10-08 | Hitachi Chem Co Ltd | 封止フィルム |
| US7973327B2 (en) * | 2008-09-02 | 2011-07-05 | Bridgelux, Inc. | Phosphor-converted LED |
| US20100109025A1 (en) * | 2008-11-05 | 2010-05-06 | Koninklijke Philips Electronics N.V. | Over the mold phosphor lens for an led |
| KR101026040B1 (ko) | 2008-11-13 | 2011-03-30 | 삼성전기주식회사 | 박막소자 제조방법 |
| JP5327042B2 (ja) * | 2009-03-26 | 2013-10-30 | 豊田合成株式会社 | Ledランプの製造方法 |
| US8597963B2 (en) * | 2009-05-19 | 2013-12-03 | Intematix Corporation | Manufacture of light emitting devices with phosphor wavelength conversion |
| TW201216526A (en) | 2010-08-20 | 2012-04-16 | Koninkl Philips Electronics Nv | Lamination process for LEDs |
| US8210716B2 (en) * | 2010-08-27 | 2012-07-03 | Quarkstar Llc | Solid state bidirectional light sheet for general illumination |
-
2011
- 2011-10-20 JP JP2013535553A patent/JP2013541220A/ja active Pending
- 2011-10-20 WO PCT/IB2011/054684 patent/WO2012056378A1/en not_active Ceased
- 2011-10-20 KR KR1020137013389A patent/KR101909299B1/ko active Active
- 2011-10-20 US US13/879,639 patent/US9351348B2/en active Active
- 2011-10-20 CN CN201180052305.1A patent/CN103180945B/zh active Active
- 2011-10-20 EP EP11784784.8A patent/EP2633554A1/en not_active Withdrawn
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Also Published As
| Publication number | Publication date |
|---|---|
| CN103180945A (zh) | 2013-06-26 |
| US20130221835A1 (en) | 2013-08-29 |
| TW201231873A (en) | 2012-08-01 |
| EP2633554A1 (en) | 2013-09-04 |
| JP2013541220A (ja) | 2013-11-07 |
| US9351348B2 (en) | 2016-05-24 |
| JP2018160678A (ja) | 2018-10-11 |
| TWI560400B (en) | 2016-12-01 |
| JP2019220720A (ja) | 2019-12-26 |
| JP6883632B2 (ja) | 2021-06-09 |
| KR20130140039A (ko) | 2013-12-23 |
| CN103180945B (zh) | 2016-12-07 |
| WO2012056378A1 (en) | 2012-05-03 |
| KR101909299B1 (ko) | 2018-10-17 |
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