JP2011517841A - 狭間隔のラインを含む構造の上に信頼性の高い層間絶縁材料を形成するための技術 - Google Patents
狭間隔のラインを含む構造の上に信頼性の高い層間絶縁材料を形成するための技術 Download PDFInfo
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- 239000011229 interlayer Substances 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims description 121
- 239000012774 insulation material Substances 0.000 title description 8
- 239000010410 layer Substances 0.000 claims abstract description 171
- 239000000463 material Substances 0.000 claims abstract description 104
- 238000000151 deposition Methods 0.000 claims abstract description 77
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 74
- 230000008021 deposition Effects 0.000 claims abstract description 47
- 239000011810 insulating material Substances 0.000 claims abstract description 46
- 239000003989 dielectric material Substances 0.000 claims abstract description 43
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 37
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 37
- 238000005137 deposition process Methods 0.000 claims abstract description 26
- 230000008569 process Effects 0.000 claims description 85
- 239000004065 semiconductor Substances 0.000 claims description 46
- 238000005530 etching Methods 0.000 claims description 32
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 16
- 238000010521 absorption reaction Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 239000002243 precursor Substances 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 5
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 5
- 238000007517 polishing process Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 230000002411 adverse Effects 0.000 abstract description 8
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- 238000004519 manufacturing process Methods 0.000 description 16
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 11
- 230000001965 increasing effect Effects 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 125000006850 spacer group Chemical group 0.000 description 9
- 238000012545 processing Methods 0.000 description 8
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- 239000002184 metal Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 239000013626 chemical specie Substances 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 238000007872 degassing Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
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- 238000002513 implantation Methods 0.000 description 3
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
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- 239000002800 charge carrier Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
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- 238000009413 insulation Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
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- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
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- 230000009467 reduction Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
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- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
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Abstract
Description
Claims (13)
- 半導体デバイス(200,300)の、高密度間隔のライン状特徴を有する複数の回路要素(204,304)の上にエッチストップ材料(209,309A,309B)を形成するステップと、
前記高密度間隔のライン状特徴(204,304)間に形成されたスペース(211)を実質的に埋めるように設計された第1の堆積プロセスによって、前記回路要素(204,304)および前記エッチストップ材料(209,309A,309B)の上に第1の層間絶縁材料(207,307)を形成するステップと、
前記スペース(211)の少なくとも一部に前記第1の層間絶縁材料(207R,307R)が埋め込まれて残るように、前記第1の層間絶縁材料(207,307)の一部を除去するステップと、
前記第1の層間絶縁材料(207R,307R)の上に第2の層間絶縁材料(207A)を形成するステップとを含む方法。 - 前記第1の層間絶縁材料(207,307)の一部を除去するステップは、前記第1の層間絶縁材料(207,307)の前記一部を、前記エッチストップ材料(209,309A,309B)に対して選択的に除去するために、エッチングプロセスを実施するステップを含む請求項1に記載の方法。
- 前記回路要素(204)の上に指標材料(241)を提供し、前記指標材料(241)のエッチングによって発生する信号を用いて前記エッチングプロセスを制御するステップを更に有する請求項2に記載の方法。
- 前記第1の層間絶縁材料(207,307)は、シリコン含有プリカーサ材料を使用する準常圧化学気相成長法プロセスを実施して形成される請求項1に記載の方法。
- 前記エッチストップ層の第1の部分(309A)が、圧縮応力を有して前記回路要素(304)の第1の回路要素の上に形成され、前記エッチストップ層の第2の部分(309B)が、引張応力を有して前記回路要素(304)の第2の回路要素の上に形成され、前記方法は、前記第1の層間絶縁材料(307)の形成前に、前記エッチストップ層の前記第1の部分および前記第2の部分(309A,309B)の上にバッファ層(360)を形成するステップをさらに含む、請求項1に記載の方法。
- 前記第1の層間絶縁材料(307)の一部を除去するステップは、化学機械研磨プロセス(342)を実施するステップを含む、請求項5に記載の方法。
- 第1の複数のトランジスタ(320)の上に、圧縮固有応力を有する第1のエッチストップ層(309A)を形成するステップと、
第2の複数のトランジスタ(350)の上に、引張固有応力を有する第2のエッチストップ層(309B)を形成するステップと、
前記第1のトランジスタおよび前記第2のトランジスタ(320,350)のうちの隣接するトランジスタ間のスペース(211)に実質的にコンフォーマルな堆積挙動を与える第1の堆積法によって、前記第1のエッチストップ層および前記第2のエッチストップ層(309A,309B)の上にバッファ層(360)を形成するステップと、
前記第1の堆積法よりもギャップフィル能の高い第2の堆積法によって、前記バッファ層(360)上に層間絶縁材料(307)の少なくとも一部を形成するステップとを含む方法。 - 前記バッファ層(360)はプラズマ化学気相成長法によって堆積される請求項7に記載の方法。
- 前記層間絶縁材料(307)の前記少なくとも一部は、準常圧化学気相成長法によって形成される請求項7に記載の方法。
- 前記層間絶縁材料の追加部分を堆積する前に、前記層間絶縁材料(307)の前記少なくとも一部の一部分を除去するステップをさらに含む請求項7に記載の方法。
- 前記バッファ層(360)は、前記第1のエッチストップ層および前記第2のエッチストップ層(309A,309B)よりも固有応力レベルの低い窒素含有材料を含む請求項7に記載の方法。
- 半導体領域(210,310)の上に形成された、複数の密に充填されたゲート電極構造(204,304)を有し、前記ゲート電極構造(204,304)のうちの隣接する2つの間にスペース(211)が画定されている第1のデバイス領域(220,320)と、
前記複数のゲート電極構造(204,304)の上に形成されたエッチストップ材料(209,309A,309B)と、
二酸化シリコンを含み、前記スペース(211)内で、前記複数のゲート電極構造(204,304)と前記エッチストップ材料(209,309A,309B)とによって規定される高さレベルよりも低い高さレベルで設けられている第1の層間絶縁材料(207R,307R)と、
二酸化シリコンを含み、前記第1の層間絶縁材料(207R,307R)の上に形成され、前記第1の層間絶縁材料(207R,307R)よりも吸水能が低い第2の層間絶縁材料(207A)とを備える、
半導体デバイス(200,300)。 - 分離構造(231)の上に設けられた第2のデバイス領域(230)をさらに備え、前記第2のデバイス領域(230)上には、前記エッチストップ層(209)と前記第2の層間絶縁材料(207A)とが形成されている請求項12に記載の半導体デバイス(200,300)。
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