JP2011510493A5 - - Google Patents

Download PDF

Info

Publication number
JP2011510493A5
JP2011510493A5 JP2010542495A JP2010542495A JP2011510493A5 JP 2011510493 A5 JP2011510493 A5 JP 2011510493A5 JP 2010542495 A JP2010542495 A JP 2010542495A JP 2010542495 A JP2010542495 A JP 2010542495A JP 2011510493 A5 JP2011510493 A5 JP 2011510493A5
Authority
JP
Japan
Prior art keywords
type semiconductor
semiconductor material
material layer
led
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010542495A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011510493A (ja
Filing date
Publication date
Priority claimed from CN200810025948.7A external-priority patent/CN101222015B/zh
Application filed filed Critical
Publication of JP2011510493A publication Critical patent/JP2011510493A/ja
Publication of JP2011510493A5 publication Critical patent/JP2011510493A5/ja
Pending legal-status Critical Current

Links

JP2010542495A 2008-01-19 2008-05-26 Ｌｅｄ、ｌｅｄを有するパッケージ構造体、およびｌｅｄを製作する方法 Pending JP2011510493A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200810025948.7A CN101222015B (zh) 2008-01-19 2008-01-19 发光二极管、具有其的封装结构及其制造方法
PCT/CN2008/001012 WO2009089671A1 (en) 2008-01-19 2008-05-26 Led package structure having the led and method for fabricating the led

Publications (2)

Publication Number Publication Date
JP2011510493A JP2011510493A (ja) 2011-03-31
JP2011510493A5 true JP2011510493A5 (enExample) 2011-07-14

Family

ID=39631704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010542495A Pending JP2011510493A (ja) 2008-01-19 2008-05-26 Ｌｅｄ、ｌｅｄを有するパッケージ構造体、およびｌｅｄを製作する方法

Country Status (5)

Country Link
US (1) US20090184337A1 (enExample)
EP (1) EP2244309A4 (enExample)
JP (1) JP2011510493A (enExample)
CN (1) CN101222015B (enExample)
WO (1) WO2009089671A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101007128B1 (ko) * 2009-02-19 2011-01-10 엘지이노텍 주식회사 발광소자 및 그 제조방법
CN101916818A (zh) * 2010-07-20 2010-12-15 武汉迪源光电科技有限公司 一种出光层折射率渐变的发光二极管
WO2012091311A2 (en) * 2010-12-28 2012-07-05 Seoul Opto Device Co., Ltd. High efficiency light emitting diode
CN104332546B (zh) * 2011-12-29 2016-04-06 义乌市运拓光电科技有限公司 一种led芯片
CN103050610B (zh) * 2012-02-01 2014-10-22 俞国宏 一种高光效白光led倒装芯片
CN102544295B (zh) * 2012-02-01 2012-11-28 俞国宏 一种高光效白光led倒装芯片
CN103050611B (zh) * 2012-02-01 2014-04-02 俞国宏 一种高光效白光led倒装芯片
CN103943769B (zh) * 2012-02-27 2016-04-06 义乌市运拓光电科技有限公司 一种使用陶瓷散热的高功率led灯具
KR101961307B1 (ko) * 2012-06-08 2019-03-25 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 라이트 유닛
US9306138B2 (en) * 2013-04-08 2016-04-05 Xiamen Sanan Optoelectronics Technology Co., Ltd. Light emitting diode packaging structure
FR3008547B1 (fr) * 2013-07-15 2016-12-09 Commissariat Energie Atomique Structure emissive a injection laterale de porteurs
CN105489733A (zh) * 2014-09-16 2016-04-13 比亚迪股份有限公司 Led芯片及其形成方法
US9985190B2 (en) * 2016-05-18 2018-05-29 eLux Inc. Formation and structure of post enhanced diodes for orientation control
CN104993024A (zh) * 2015-06-19 2015-10-21 圆融光电科技股份有限公司 发光二极管芯片及其制作方法和封装方法
FR3042913B1 (fr) * 2015-10-22 2019-07-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Diode micro-electronique a surface active optimisee
CN105517260A (zh) * 2016-02-03 2016-04-20 泰州优宾晶圆科技有限公司 一种灯泡电源一体化系统
CN108321276A (zh) * 2018-01-31 2018-07-24 湘能华磊光电股份有限公司 一种改善电极环粘附性的pv膜层及粘附性改善方法
TWI661584B (zh) * 2018-05-18 2019-06-01 光磊科技股份有限公司 發光晶粒、封裝結構及其相關製造方法
KR102030323B1 (ko) * 2018-11-23 2019-10-10 엘지디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
FR3091028B1 (fr) * 2018-12-20 2022-01-21 Commissariat Energie Atomique Dispositif optoélectronique à jonction PN
FR3090999B1 (fr) 2018-12-20 2022-01-14 Commissariat Energie Atomique Procédé de fabrication d'un composant semiconducteur à base d'un composé III-N
CN111463261A (zh) * 2020-03-26 2020-07-28 深圳第三代半导体研究院 氮化物肖特基二极管及其制造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3333356B2 (ja) * 1995-07-12 2002-10-15 株式会社東芝 半導体装置
TW365071B (en) * 1996-09-09 1999-07-21 Toshiba Corp Semiconductor light emitting diode and method for manufacturing the same
JP3087831B2 (ja) * 1996-11-27 2000-09-11 日亜化学工業株式会社 窒化物半導体素子
JPH10308537A (ja) * 1997-05-08 1998-11-17 Rohm Co Ltd 半導体発光素子
JP3460638B2 (ja) * 1999-09-16 2003-10-27 日亜化学工業株式会社 窒化物半導体発光チップの製造方法
JP2001217456A (ja) * 2000-02-03 2001-08-10 Sharp Corp 窒化ガリウム系化合物半導体発光素子
TW488086B (en) * 2000-09-06 2002-05-21 Highlink Technology Corp Light emitting compound semiconductor device and its manufacturing method
TW493284B (en) * 2000-09-06 2002-07-01 Highlink Technology Corp LED device and the manufacturing method thereof
US6255129B1 (en) * 2000-09-07 2001-07-03 Highlink Technology Corporation Light-emitting diode device and method of manufacturing the same
DE10044500A1 (de) * 2000-09-08 2002-04-04 Highlink Technology Corp Chupe Licht emittierendes Verbindungshalbleiter-Bauteil und Verfahren zur Herstellung desselben
JP2002368275A (ja) * 2001-06-11 2002-12-20 Toyoda Gosei Co Ltd 半導体素子及びその製造方法
JP2003023180A (ja) * 2001-07-05 2003-01-24 Seiwa Electric Mfg Co Ltd 化合物半導体発光素子及びその製造方法
CN1208846C (zh) * 2002-03-27 2005-06-29 联铨科技股份有限公司 Ⅲ族氮化物发光二极管及其制造方法
EP1529807A3 (en) * 2003-10-16 2006-01-25 Nitto Denko Corporation Epoxy resin composition for encapsulating optical semiconductor element and optical semiconductor device using the same
TW200520266A (en) * 2003-11-21 2005-06-16 Sanken Electric Co Ltd Semiconductor luminous element and manufacturing method of the same
CN100407457C (zh) * 2005-05-26 2008-07-30 大连路美芯片科技有限公司 氮化镓基高亮度高功率蓝绿发光二极管芯片
KR100795179B1 (ko) * 2006-05-30 2008-01-16 삼성전기주식회사 질화물계 반도체 발광소자

Similar Documents

Publication Publication Date Title
JP2011510493A5 (enExample)
JP2009105376A5 (enExample)
CN203038965U (zh) 发光元件
CN108054265B (zh) 半导体发光结构及半导体封装结构
JP2009194322A5 (enExample)
JP2016021592A5 (enExample)
JP2012256848A5 (enExample)
TW200910636A (en) A light-emitting device and the manufacturing method thereof
JP2010244808A5 (enExample)
CN103794689A (zh) 覆晶式led芯片的制作方法
EP2555255A3 (en) Light emitting diode structure and manufacturing method thereof
KR20180000032A (ko) 반도체 발광소자 패키지
CN103618042A (zh) 一种半导体发光二极管芯片
CN105609605A (zh) Led芯片及其制造方法
CN103367595B (zh) 发光二极管晶粒及其制造方法
CN104900770A (zh) Led芯片及其制作方法、显示装置
JP5515685B2 (ja) 発光素子及びそれを用いた発光装置の製造方法
CN203456495U (zh) Led芯片
JP3171592U (ja) 発光ダイオードの電極の構造
CN103594591B (zh) 具有透明电极的倒装发光二极管的制造方法
CN104979444A (zh) 一种具有电极保护区的四元系发光二极管及制作方法
CN103594569B (zh) 具有粗化透明电极的倒装发光二极管的制造方法
CN103594593B (zh) 具有粗化透明电极的倒装发光二极管的制造方法
KR101677063B1 (ko) 엘이디 패키지용 리드 프레임 기판 및 그의 제조 방법
CN103985804A (zh) Led芯片及其制造方法