CN101222015B - 发光二极管、具有其的封装结构及其制造方法 - Google Patents

发光二极管、具有其的封装结构及其制造方法 Download PDF

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Publication number
CN101222015B
CN101222015B CN200810025948.7A CN200810025948A CN101222015B CN 101222015 B CN101222015 B CN 101222015B CN 200810025948 A CN200810025948 A CN 200810025948A CN 101222015 B CN101222015 B CN 101222015B
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CN
China
Prior art keywords
type semiconductor
material layer
layer
light
negative electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200810025948.7A
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English (en)
Chinese (zh)
Other versions
CN101222015A (zh
Inventor
樊邦弘
翁新川
叶国光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guangdong Yinyu Chip Semiconductor Co., Ltd.
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Heshan Lide Electronic Enterprise Co Ltd
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Filing date
Publication date
Application filed by Heshan Lide Electronic Enterprise Co Ltd filed Critical Heshan Lide Electronic Enterprise Co Ltd
Priority to CN200810025948.7A priority Critical patent/CN101222015B/zh
Priority to EP08757348A priority patent/EP2244309A4/en
Priority to JP2010542495A priority patent/JP2011510493A/ja
Priority to PCT/CN2008/001012 priority patent/WO2009089671A1/zh
Publication of CN101222015A publication Critical patent/CN101222015A/zh
Priority to US12/351,011 priority patent/US20090184337A1/en
Application granted granted Critical
Publication of CN101222015B publication Critical patent/CN101222015B/zh
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

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  • Led Devices (AREA)
CN200810025948.7A 2008-01-19 2008-01-19 发光二极管、具有其的封装结构及其制造方法 Expired - Fee Related CN101222015B (zh)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN200810025948.7A CN101222015B (zh) 2008-01-19 2008-01-19 发光二极管、具有其的封装结构及其制造方法
EP08757348A EP2244309A4 (en) 2008-01-19 2008-05-26 LED CAPSULE STRUCTURE WITH THE LED AND METHOD FOR MANUFACTURING THE LED
JP2010542495A JP2011510493A (ja) 2008-01-19 2008-05-26 Ｌｅｄ、ｌｅｄを有するパッケージ構造体、およびｌｅｄを製作する方法
PCT/CN2008/001012 WO2009089671A1 (en) 2008-01-19 2008-05-26 Led package structure having the led and method for fabricating the led
US12/351,011 US20090184337A1 (en) 2008-01-19 2009-01-09 Light-Emitting Diode, Package Structure Thereof and Manufacturing Method for the Same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN200810025948.7A CN101222015B (zh) 2008-01-19 2008-01-19 发光二极管、具有其的封装结构及其制造方法

Publications (2)

Publication Number Publication Date
CN101222015A CN101222015A (zh) 2008-07-16
CN101222015B true CN101222015B (zh) 2010-05-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN200810025948.7A Expired - Fee Related CN101222015B (zh) 2008-01-19 2008-01-19 发光二极管、具有其的封装结构及其制造方法

Country Status (5)

Country Link
US (1) US20090184337A1 (enExample)
EP (1) EP2244309A4 (enExample)
JP (1) JP2011510493A (enExample)
CN (1) CN101222015B (enExample)
WO (1) WO2009089671A1 (enExample)

Cited By (1)

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CN103943769A (zh) * 2012-02-27 2014-07-23 义乌市运拓光电科技有限公司 一种使用陶瓷散热的高功率led灯具

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KR101007128B1 (ko) * 2009-02-19 2011-01-10 엘지이노텍 주식회사 발광소자 및 그 제조방법
CN101916818A (zh) * 2010-07-20 2010-12-15 武汉迪源光电科技有限公司 一种出光层折射率渐变的发光二极管
CN103283045B (zh) 2010-12-28 2016-08-17 首尔伟傲世有限公司 高效发光二极管
CN104241490B (zh) * 2011-12-29 2015-10-21 义乌市运拓光电科技有限公司 一种led芯片
CN103050611B (zh) * 2012-02-01 2014-04-02 俞国宏 一种高光效白光led倒装芯片
CN102544295B (zh) * 2012-02-01 2012-11-28 俞国宏 一种高光效白光led倒装芯片
CN103050610B (zh) * 2012-02-01 2014-10-22 俞国宏 一种高光效白光led倒装芯片
KR101961307B1 (ko) * 2012-06-08 2019-03-25 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 라이트 유닛
US9306138B2 (en) * 2013-04-08 2016-04-05 Xiamen Sanan Optoelectronics Technology Co., Ltd. Light emitting diode packaging structure
FR3008547B1 (fr) 2013-07-15 2016-12-09 Commissariat Energie Atomique Structure emissive a injection laterale de porteurs
CN105489733A (zh) * 2014-09-16 2016-04-13 比亚迪股份有限公司 Led芯片及其形成方法
US9985190B2 (en) * 2016-05-18 2018-05-29 eLux Inc. Formation and structure of post enhanced diodes for orientation control
CN104993024A (zh) * 2015-06-19 2015-10-21 圆融光电科技股份有限公司 发光二极管芯片及其制作方法和封装方法
FR3042913B1 (fr) * 2015-10-22 2019-07-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Diode micro-electronique a surface active optimisee
CN105517260A (zh) * 2016-02-03 2016-04-20 泰州优宾晶圆科技有限公司 一种灯泡电源一体化系统
CN108321276A (zh) * 2018-01-31 2018-07-24 湘能华磊光电股份有限公司 一种改善电极环粘附性的pv膜层及粘附性改善方法
TWI661584B (zh) * 2018-05-18 2019-06-01 光磊科技股份有限公司 發光晶粒、封裝結構及其相關製造方法
KR102030323B1 (ko) * 2018-11-23 2019-10-10 엘지디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
FR3090999B1 (fr) 2018-12-20 2022-01-14 Commissariat Energie Atomique Procédé de fabrication d'un composant semiconducteur à base d'un composé III-N
FR3091028B1 (fr) * 2018-12-20 2022-01-21 Commissariat Energie Atomique Dispositif optoélectronique à jonction PN
CN111463261A (zh) * 2020-03-26 2020-07-28 深圳第三代半导体研究院 氮化物肖特基二极管及其制造方法

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Cited By (2)

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CN103943769A (zh) * 2012-02-27 2014-07-23 义乌市运拓光电科技有限公司 一种使用陶瓷散热的高功率led灯具
CN103943769B (zh) * 2012-02-27 2016-04-06 义乌市运拓光电科技有限公司 一种使用陶瓷散热的高功率led灯具

Also Published As

Publication number Publication date
CN101222015A (zh) 2008-07-16
EP2244309A1 (en) 2010-10-27
US20090184337A1 (en) 2009-07-23
EP2244309A4 (en) 2013-04-03
WO2009089671A1 (en) 2009-07-23
JP2011510493A (ja) 2011-03-31

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