JP2011505589A - 選択的領域堆積と組み合わせて着色マスクを使用する方法 - Google Patents

選択的領域堆積と組み合わせて着色マスクを使用する方法 Download PDF

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Publication number
JP2011505589A
JP2011505589A JP2010534945A JP2010534945A JP2011505589A JP 2011505589 A JP2011505589 A JP 2011505589A JP 2010534945 A JP2010534945 A JP 2010534945A JP 2010534945 A JP2010534945 A JP 2010534945A JP 2011505589 A JP2011505589 A JP 2011505589A
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layer
deposition
mask
color
pattern
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Japanese (ja)
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JP2011505589A5 (enExample
Inventor
マリー アービング，リン
キャロル フリーマン，ダイアン
ジェローム カウデリー−コーバン，ピーター
ヤン，チェン
ハワード レビー，デイビッド
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イーストマン コダック カンパニー
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Publication of JP2011505589A publication Critical patent/JP2011505589A/ja
Publication of JP2011505589A5 publication Critical patent/JP2011505589A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Filters (AREA)
  • Thin Film Transistor (AREA)
JP2010534945A 2007-11-20 2008-11-12 選択的領域堆積と組み合わせて着色マスクを使用する方法 Pending JP2011505589A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/986,169 US8129098B2 (en) 2007-11-20 2007-11-20 Colored mask combined with selective area deposition
PCT/US2008/012762 WO2009067162A1 (en) 2007-11-20 2008-11-12 Process using colored mask combined with selective area deposition

Publications (2)

Publication Number Publication Date
JP2011505589A true JP2011505589A (ja) 2011-02-24
JP2011505589A5 JP2011505589A5 (enExample) 2013-01-24

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ID=40447758

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JP2010534945A Pending JP2011505589A (ja) 2007-11-20 2008-11-12 選択的領域堆積と組み合わせて着色マスクを使用する方法

Country Status (5)

Country Link
US (1) US8129098B2 (enExample)
EP (1) EP2217969A1 (enExample)
JP (1) JP2011505589A (enExample)
CN (1) CN101868761A (enExample)
WO (1) WO2009067162A1 (enExample)

Cited By (4)

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WO2020008969A1 (ja) * 2018-07-05 2020-01-09 東レ株式会社 樹脂組成物、遮光膜、遮光膜の製造方法および隔壁付き基板
JP2021512207A (ja) * 2018-01-22 2021-05-13 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ 誘電材料
WO2024195502A1 (ja) * 2023-03-17 2024-09-26 株式会社レゾナック 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及び配線基板の製造方法
WO2024194942A1 (ja) * 2023-03-17 2024-09-26 株式会社レゾナック 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及び配線基板の製造方法

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US8221964B2 (en) * 2007-11-20 2012-07-17 Eastman Kodak Company Integrated color mask
DE102008054219A1 (de) * 2008-10-31 2010-05-06 Osram Opto Semiconductors Gmbh Organisches strahlungsemittierendes Bauelement und Verfahren zur Herstellung eines organischen strahlungsemittierenden Bauelements
KR101044279B1 (ko) * 2009-07-30 2011-06-28 서강대학교산학협력단 Ｃｍｐ 연마패드와 그의 제조방법
TWI449007B (zh) 2011-09-16 2014-08-11 E Ink Holdings Inc 可撓性顯示裝置的製造方法
US8791023B2 (en) * 2012-08-31 2014-07-29 Eastman Kodak Company Patterned thin film dielectric layer formation
US8927434B2 (en) * 2012-08-31 2015-01-06 Eastman Kodak Company Patterned thin film dielectric stack formation
CN105511227B (zh) * 2015-12-26 2019-08-02 杭州福斯特应用材料股份有限公司 一种具有良好孔掩蔽功能的干膜抗蚀剂及其层压体
CN106298070B (zh) * 2016-08-29 2017-09-15 上海交通大学 一种图形化导电薄膜的制备方法
CN108020991A (zh) * 2016-10-31 2018-05-11 无锡中微掩模电子有限公司 集成电路用掩模版背曝方法
CN108063089B (zh) * 2016-11-08 2020-07-17 中国科学院微电子研究所 一种mos器件原子层沉积原位制备方法

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JP2002082630A (ja) * 2000-05-12 2002-03-22 Semiconductor Energy Lab Co Ltd 電気光学装置
JP2004020743A (ja) * 2002-06-13 2004-01-22 Dainippon Printing Co Ltd カラーフィルタの製造方法
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JP2009537310A (ja) * 2006-05-19 2009-10-29 イーストマン コダック カンパニー 透明構造体を形成するための着色マスキング
JP2011503668A (ja) * 2007-11-20 2011-01-27 イーストマン コダック カンパニー 集積化カラーマスク
JP2011503670A (ja) * 2007-11-20 2011-01-27 イーストマン コダック カンパニー ディスプレイ回路を製造するための多色マスク方法

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JPS5379466A (en) * 1976-12-23 1978-07-13 Ibm Method of forming negative mask
JPS54114254A (en) * 1978-01-30 1979-09-06 Eastman Kodak Co Color filter arraging structure using light fading color
JPH01235383A (ja) * 1988-03-16 1989-09-20 Matsushita Electric Ind Co Ltd 薄膜電界効果トランジスターの製造方法
JP2002082630A (ja) * 2000-05-12 2002-03-22 Semiconductor Energy Lab Co Ltd 電気光学装置
JP2002026011A (ja) * 2000-07-03 2002-01-25 Nec Kagoshima Ltd パターン形成方法及び薄膜トランジスタの製造方法
JP2004020743A (ja) * 2002-06-13 2004-01-22 Dainippon Printing Co Ltd カラーフィルタの製造方法
JP2009531848A (ja) * 2006-03-29 2009-09-03 プラスティック ロジック リミテッド 自己整合電極を有するデバイスの作製方法
JP2009537310A (ja) * 2006-05-19 2009-10-29 イーストマン コダック カンパニー 透明構造体を形成するための着色マスキング
JP2011503668A (ja) * 2007-11-20 2011-01-27 イーストマン コダック カンパニー 集積化カラーマスク
JP2011503670A (ja) * 2007-11-20 2011-01-27 イーストマン コダック カンパニー ディスプレイ回路を製造するための多色マスク方法

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021512207A (ja) * 2018-01-22 2021-05-13 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ 誘電材料
JP7404272B2 (ja) 2018-01-22 2023-12-25 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 誘電材料
KR102432033B1 (ko) 2018-07-05 2022-08-12 도레이 카부시키가이샤 수지 조성물, 차광막, 차광막의 제조 방법 및 격벽 구비 기판
KR20210029764A (ko) * 2018-07-05 2021-03-16 도레이 카부시키가이샤 수지 조성물, 차광막, 차광막의 제조 방법 및 격벽 구비 기판
JPWO2020008969A1 (ja) * 2018-07-05 2021-05-13 東レ株式会社 樹脂組成物、遮光膜および遮光膜の製造方法
KR20220049046A (ko) * 2018-07-05 2022-04-20 도레이 카부시키가이샤 수지 조성물, 차광막, 차광막의 제조 방법 및 격벽 구비 기판
WO2020008969A1 (ja) * 2018-07-05 2020-01-09 東レ株式会社 樹脂組成物、遮光膜、遮光膜の製造方法および隔壁付き基板
CN112368611A (zh) * 2018-07-05 2021-02-12 东丽株式会社 树脂组合物、遮光膜、遮光膜的制造方法及带隔壁的基板
KR102624898B1 (ko) 2018-07-05 2024-01-16 도레이 카부시키가이샤 수지 조성물, 차광막, 차광막의 제조 방법 및 격벽 구비 기판
WO2024195502A1 (ja) * 2023-03-17 2024-09-26 株式会社レゾナック 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及び配線基板の製造方法
WO2024194943A1 (ja) * 2023-03-17 2024-09-26 株式会社レゾナック 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及び配線基板の製造方法
WO2024194942A1 (ja) * 2023-03-17 2024-09-26 株式会社レゾナック 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及び配線基板の製造方法
WO2024195410A1 (ja) * 2023-03-17 2024-09-26 株式会社レゾナック 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及び配線基板の製造方法

Also Published As

Publication number Publication date
EP2217969A1 (en) 2010-08-18
US8129098B2 (en) 2012-03-06
WO2009067162A1 (en) 2009-05-28
CN101868761A (zh) 2010-10-20
US20090130609A1 (en) 2009-05-21

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