CN101868761A - 使用与选区沉积相结合的着色掩模的方法 - Google Patents

使用与选区沉积相结合的着色掩模的方法 Download PDF

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Publication number
CN101868761A
CN101868761A CN200880116812A CN200880116812A CN101868761A CN 101868761 A CN101868761 A CN 101868761A CN 200880116812 A CN200880116812 A CN 200880116812A CN 200880116812 A CN200880116812 A CN 200880116812A CN 101868761 A CN101868761 A CN 101868761A
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CN
China
Prior art keywords
layer
mask
pattern
light
polychrome
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Pending
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CN200880116812A
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English (en)
Chinese (zh)
Inventor
L·M·欧文
D·C·弗里曼
P·J·考德里-科万
C·杨
D·H·莱维
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Eastman Kodak Co
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Eastman Kodak Co
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Publication of CN101868761A publication Critical patent/CN101868761A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Thin Film Transistor (AREA)
  • Optical Filters (AREA)
CN200880116812A 2007-11-20 2008-11-12 使用与选区沉积相结合的着色掩模的方法 Pending CN101868761A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/986169 2007-11-20
US11/986,169 US8129098B2 (en) 2007-11-20 2007-11-20 Colored mask combined with selective area deposition
PCT/US2008/012762 WO2009067162A1 (en) 2007-11-20 2008-11-12 Process using colored mask combined with selective area deposition

Publications (1)

Publication Number Publication Date
CN101868761A true CN101868761A (zh) 2010-10-20

Family

ID=40447758

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880116812A Pending CN101868761A (zh) 2007-11-20 2008-11-12 使用与选区沉积相结合的着色掩模的方法

Country Status (5)

Country Link
US (1) US8129098B2 (enExample)
EP (1) EP2217969A1 (enExample)
JP (1) JP2011505589A (enExample)
CN (1) CN101868761A (enExample)
WO (1) WO2009067162A1 (enExample)

Cited By (6)

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CN105511227A (zh) * 2015-12-26 2016-04-20 杭州福斯特光伏材料股份有限公司 一种具有良好孔掩蔽功能的干膜抗蚀剂及其层压体
CN106298070A (zh) * 2016-08-29 2017-01-04 上海交通大学 一种图形化导电薄膜的制备方法
CN108020991A (zh) * 2016-10-31 2018-05-11 无锡中微掩模电子有限公司 集成电路用掩模版背曝方法
CN108063089A (zh) * 2016-11-08 2018-05-22 中国科学院微电子研究所 一种mos器件原子层沉积原位制备方法
CN111601869A (zh) * 2018-01-22 2020-08-28 默克专利股份有限公司 介电材料
TWI783160B (zh) * 2018-07-05 2022-11-11 日商東麗股份有限公司 樹脂組成物、遮光膜及遮光膜的製造方法

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US8221964B2 (en) * 2007-11-20 2012-07-17 Eastman Kodak Company Integrated color mask
DE102008054219A1 (de) * 2008-10-31 2010-05-06 Osram Opto Semiconductors Gmbh Organisches strahlungsemittierendes Bauelement und Verfahren zur Herstellung eines organischen strahlungsemittierenden Bauelements
KR101044279B1 (ko) * 2009-07-30 2011-06-28 서강대학교산학협력단 Ｃｍｐ 연마패드와 그의 제조방법
TWI449007B (zh) 2011-09-16 2014-08-11 E Ink Holdings Inc 可撓性顯示裝置的製造方法
US8927434B2 (en) * 2012-08-31 2015-01-06 Eastman Kodak Company Patterned thin film dielectric stack formation
US8791023B2 (en) * 2012-08-31 2014-07-29 Eastman Kodak Company Patterned thin film dielectric layer formation
WO2024194943A1 (ja) * 2023-03-17 2024-09-26 株式会社レゾナック 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及び配線基板の製造方法
WO2024194942A1 (ja) * 2023-03-17 2024-09-26 株式会社レゾナック 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及び配線基板の製造方法

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105511227A (zh) * 2015-12-26 2016-04-20 杭州福斯特光伏材料股份有限公司 一种具有良好孔掩蔽功能的干膜抗蚀剂及其层压体
CN105511227B (zh) * 2015-12-26 2019-08-02 杭州福斯特应用材料股份有限公司 一种具有良好孔掩蔽功能的干膜抗蚀剂及其层压体
CN106298070A (zh) * 2016-08-29 2017-01-04 上海交通大学 一种图形化导电薄膜的制备方法
CN106298070B (zh) * 2016-08-29 2017-09-15 上海交通大学 一种图形化导电薄膜的制备方法
CN108020991A (zh) * 2016-10-31 2018-05-11 无锡中微掩模电子有限公司 集成电路用掩模版背曝方法
CN108063089A (zh) * 2016-11-08 2018-05-22 中国科学院微电子研究所 一种mos器件原子层沉积原位制备方法
CN111601869A (zh) * 2018-01-22 2020-08-28 默克专利股份有限公司 介电材料
TWI783160B (zh) * 2018-07-05 2022-11-11 日商東麗股份有限公司 樹脂組成物、遮光膜及遮光膜的製造方法
TWI816371B (zh) * 2018-07-05 2023-09-21 日商東麗股份有限公司 帶隔離壁的基板及顯示裝置

Also Published As

Publication number Publication date
US8129098B2 (en) 2012-03-06
US20090130609A1 (en) 2009-05-21
WO2009067162A1 (en) 2009-05-28
EP2217969A1 (en) 2010-08-18
JP2011505589A (ja) 2011-02-24

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Application publication date: 20101020