JP2011256444A - Substrate treating method and substrate treating apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a treating method and a treating apparatus capable of conducting a desired treatment in a through hole.SOLUTION: The treating apparatus 1 is provided with a bath 11 wherein a solution L is supplied thereto and a substrate 2 is immersed in the supplied solution L. The treating apparatus 1 is configured such that, when the solution L is made to flow from a first supply port 111A toward a first discharge port 111B and the solution L is made to flow from a second supply port 112A toward a second discharge port 112B, the solution L flows from the upper side toward the lower side in the vertical direction along one side and the other side of a substrate surface of the substrate 2. The treating apparatus 1 has an adjusting means for making an average flow rate of the solution L on the one side surface of the substrate 2 different from an average flow rate of the solution L on the other side surface.

Description

  The present invention relates to a substrate processing method and a processing apparatus.

Conventionally, circuit boards are manufactured as follows.
A double-sided copper-clad laminate with copper foil attached to both sides of the substrate is prepared. Via holes are formed in the double-sided copper-clad laminate, and plating is further performed on the via holes and the double-sided copper-clad laminate. Thereafter, the double-sided copper-clad laminate is processed to form a circuit (see, for example, Patent Document 1).

JP 11-186737 A

  In the conventional method for manufacturing a substrate, a double-sided copper-clad laminate is immersed in a plating solution when plating. However, with this manufacturing method, it has been difficult to stably obtain a desired plating film in the via hole.

  In addition, the subject that a desired process cannot be implemented in a via hole arises not only when performing plating but also when the double-sided copper-clad laminate is immersed in water and washed.

According to the present invention, the substrate is processed by processing the substrate by bringing a liquid into contact with the through hole of the substrate in which the through hole penetrating from one substrate surface side to the other substrate surface side of the substrate is formed. A method,
A step of supplying the liquid, the step of preparing the tank comprising a partition that holds the substrate and partitions the tank together with the held substrate into a first tank and a second tank;
Holding the substrate on the partition wall and installing the substrate in the tank;
The liquid is supplied into the first tank and the second tank so that the substrate is immersed in the liquid, and the plating solution is discharged from each of the first tank and the second tank, whereby the liquid is Flowing along one substrate surface of the substrate and the other substrate surface, and contacting the liquid in the through hole,
In the step of flowing the liquid along one substrate surface and the other substrate surface of the substrate and contacting the liquid in the through hole,
There is provided a substrate processing method in which an average flow velocity of the liquid flowing along one substrate surface of the substrate is different from an average flow velocity of the liquid flowing along the other substrate surface of the substrate.

  According to the present invention, the average flow velocity of the liquid flowing along one substrate surface of the substrate is different from the average flow velocity of the liquid flowing along the other substrate surface of the substrate. As a result, the liquid is drawn into the through hole. Therefore, the inside of the through hole can be reliably treated with the liquid.

Moreover, according to this invention, the processing apparatus for enforcing the processing method mentioned above can also be provided.
That is, according to the present invention,
In the substrate processing apparatus for processing the substrate by bringing a liquid into contact with the through hole of the substrate in which a through hole penetrating from one substrate surface side to the other substrate surface side of the substrate is formed,
A tank provided with a partition for supplying the liquid therein, immersing the substrate in the supplied liquid, holding the substrate, and partitioning the tank together with the held substrate into a first tank and a second tank When,
Supply means for supplying the liquid into the first tank and the second tank of the tank,
The substrate processing apparatus is configured such that the liquid supplied from the supply unit flows along one substrate surface and the other substrate surface of the substrate and contacts a through hole of the substrate.
It is possible to provide a substrate processing apparatus having adjustment means for making the average flow velocity of the liquid flowing along one substrate surface of the substrate different from the average flow velocity of the liquid flowing along the other substrate surface of the substrate.

  ADVANTAGE OF THE INVENTION According to this invention, the processing method and processing apparatus which can perform a desired process in a through-hole are provided.

It is sectional drawing which shows the processing apparatus concerning one Embodiment of this invention. It is a figure which shows a partition. It is a figure which shows a partition. It is a figure which shows the plating process process of a board | substrate. It is a figure which shows the plating process process of a board | substrate. It is a schematic diagram which shows a mode that an electrolytic plating solution enters into the through-hole of a board | substrate. It is sectional drawing which shows the processing apparatus concerning the modification of this invention. It is sectional drawing which shows the processing apparatus concerning the modification of this invention. It is sectional drawing which shows the processing apparatus concerning the modification of this invention. It is sectional drawing which shows the processing apparatus concerning the modification of this invention. It is sectional drawing at the time of seeing a processing apparatus from the upper side of a tank. It is sectional drawing which shows the processing apparatus concerning the modification of this invention. It is sectional drawing which shows the processing apparatus concerning the modification of this invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
First, the outline of the substrate processing apparatus 1 of the present embodiment will be described with reference to FIG.
The processing apparatus 1 brings the liquid L into contact with the through hole 201 of the substrate 2 in which the through hole 201 (see FIG. 4) penetrating from one substrate surface side of the substrate 2 to the other substrate surface side is formed. Thus, the substrate 2 is processed.
The processing apparatus 1 includes a tank 11 in which the liquid L is supplied and the substrate 2 is immersed in the supplied liquid L. In the tank 11, the substrate 2 is held so that the pair of substrate surfaces of the substrate 2 are substantially parallel to the vertical direction, and the tank 11 is held in the first tank 111 and the second tank 112 together with the held substrate 2. Partition walls 113 are formed.
The first supply port 111A for liquid in the first tank 111 and the second supply port 112A for liquid in the second tank 112 are located above the substrate 2 held by the partition wall 113 in the vertical direction. The first liquid discharge port 111 </ b> B and the second liquid discharge port 112 </ b> B of the second tank 112 are vertically lower than the substrate 2 held by the partition wall 113.
When the substrate processing apparatus 1 allows the liquid L to flow from the first supply port 111A toward the first discharge port 111B, and flows the liquid L from the second supply port 112A toward the second discharge port 112B. The liquid L is configured to flow along one substrate surface and the other substrate surface of the substrate 2 from the upper side to the lower side in the vertical direction, and the liquid L flows along one substrate surface of the substrate 2. L has an adjusting means for making the average flow velocity (average linear velocity) of L different from the average flow velocity (average linear velocity) of the liquid L flowing along the other substrate surface of the substrate 2.

Next, the processing apparatus 1 will be described in detail.
The liquid L is a chemical solution, and in this embodiment, the electrolytic plating solution L. That is, the processing apparatus 1 is an electrolytic plating apparatus in this embodiment.
The tank 11 is, for example, a hard PVC tank, and in the present embodiment, has a rectangular parallelepiped shape or a cubic shape.
The tank 11 includes a partition wall 113. For example, the partition wall 113 is erected on the bottom surface of the tank 11 and holds the substrate 2 so that the pair of substrate surfaces of the substrate 2 are substantially parallel to the vertical direction. The partition 113 partitions the tank 11 together with the held substrate 2 into a first tank 111 and a second tank 112.
Here, the partition 113 is shown in FIGS. 2 is a view as seen from the x-axis direction of FIG. 1, and FIG. 3 is an exploded view of the partition wall 113.
In the present embodiment, the partition wall 113 is composed of a pair of plate materials 113A. An opening 113A1 is formed at the center of the plate material 113A, and the substrate 2 is arranged so as to close the opening 113A1 of the one plate material 113A. And the other board | plate material 113A is piled up, and the peripheral part of the board | substrate 2 is pinched | interposed by board | plate material 113A. As a result, the substrate 2 is held on the partition wall 113.
A recess (not shown) for fitting the partition wall 113 is formed on the bottom surface of the tank 11.

As shown in FIG. 1, a first supply port 111 </ b> A for the electrolytic plating solution L is formed on the side wall of the tank 11. The electrolytic plating solution L is supplied into the first tank 111 from the first supply port 111A. The first supply port 111 </ b> A is positioned above the substrate 2 held by the partition wall 113 in the vertical direction. The electrolytic plating solution L in the first tank 111 flows along the substrate surface of the substrate 2 and is discharged from the first discharge port 111B.
The first discharge port 111 </ b> B is formed on the bottom surface of the tank 11, and is positioned below the substrate 2 held by the partition wall 113 in the vertical direction.
Here, the first outlet 111B may be a single through hole or a plurality of holes.

A second supply port 112 </ b> A for the electrolytic plating solution L is formed on the side wall of the tank 11. The electrolytic plating solution L is supplied into the second tank 112 from the second supply port 112A. The second supply port 112 </ b> A is positioned above the substrate 2 held by the partition wall 113 in the vertical direction. The electrolytic plating solution L in the first tank 111 flows along the substrate surface of the substrate 2 and is discharged from the second discharge port 112B.
The second discharge port 112 </ b> B is formed on the bottom surface of the tank 11, and is positioned below the substrate 2 held by the partition wall 113 in the vertical direction.
Here, the second discharge port 112B may be a single through hole or a plurality of holes.
In this embodiment, the 1st discharge port 111B is comprised by one through-hole, and the 2nd discharge port 112B is comprised by one through-hole. The opening diameter of the first discharge port 111B is larger than the opening diameter of the second discharge port 112B.

  In the present embodiment, the discharge ports 111B and 112B and the tank 14 are not connected by piping, and the electrolytic plating solution L discharged from the discharge ports 111B and 112B naturally falls into the tank 14.

  A plurality of anodes 12 are installed in the tank 11. In the present embodiment, two anodes 12 are installed. One anode 12 is disposed to face one substrate surface of the substrate 2 disposed in the tank 11, and the other anode 12 is opposed to the other substrate surface of the substrate 2 disposed in the tank 11. Are arranged to be. The anode 12 is, for example, phosphorous copper.

The processing apparatus 1 includes a tank (conditioning tank) 14 filled with an electrolytic plating solution L to be supplied to the tank 11. Since the tank 14 also serves to receive the electrolytic plating solution L that has overflowed from the tank 11, the tank 14 is disposed on the lower side in the vertical direction of the tank 11.
Here, a bubbling device (not shown) may be connected to the tank 14 in order to agitate the electrolytic plating solution L in the tank 14. By doing in this way, the density | concentration of the electroplating liquid L in the tank 14 can be made uniform.
The tank 14 and the first supply port 111 </ b> A of the tank 11 are connected by a pipe 16. The electrolytic plating solution L is supplied from the tank 14 to the tank 11 via the pipe 16 and the pump P1 connected to the pipe 16.
The tank 14 and the second supply port 112 </ b> A of the tank 11 are connected by a pipe 17. The electrolytic plating solution L is supplied from the tank 14 to the tank 11 through the pipe 17 and the pump P2 connected to the pipe 17.

Next, a method for processing the substrate 2 using the processing apparatus 1 will be described.
First, a base material 20 as shown in FIG. 4 (A) is prepared.
The base material 20 includes an insulating layer 21 and a metal film 22 (for example, a copper film) attached to the front and back surfaces of the insulating layer 21. The thickness of the insulating layer 21 is, for example, 5 μm or more and 100 μm or less, and the thickness of the metal film 22 is, for example, 1 μm or more and 50 μm or less. The thickness of the whole base material 20 is 10 micrometers or more and 200 micrometers or less, for example.

  Next, as illustrated in FIG. 4B, a through hole 201 that penetrates the pair of metal films 22 and the insulating layer 21 is formed. Next, electroless plating is performed on the metal film 22 and inside the through hole 201. Thereby, the substrate 2 is obtained.

Thereafter, a mask M that covers a part of the metal film 22 is disposed on the substrate 2, and electrolytic plating is performed on the inside of the through hole 201 and on the metal film 22 using the processing apparatus 1 (see FIG. 5A). ).
Electrolytic plating is performed as follows.
First, as shown in FIG. 1, the electrolytic plating solution L is supplied from the tank 14 to the first tank 111 of the tank 11 through the pipe 16 and the pump P1. Further, the electrolytic plating solution L is supplied from the tank 14 to the second tank 112 through the pipe 17 and the pump P2, and the inside of the tank 11 is filled with the electrolytic plating solution L.
In addition, while the electrolytic plating solution L overflows from the tank 11, the electrolytic plating solution L is continuously supplied to the tank 11 so that the inside of the tank 11 is filled with the electrolytic plating solution L.
Thereafter, the substrate 2 is held by the partition wall 113, the substrate 2 is placed in the tank 11, and the substrate 2 is immersed in the electrolytic plating solution L. At this time, the substrate 2 is disposed in the tank 11 so that the substrate surface of the substrate 2 is substantially in the vertical direction. Thereafter, electroplating on the substrate 2 is started by energizing between the cathode (not shown) and the anode 12. When performing electrolytic plating, the electrolytic plating solution L is supplied from the tank 14 to the first tank 111 and the second tank 112 as needed. Thereby, the electrolytic plating solution L in the tank 11 flows from the upper side in the vertical direction toward the lower side in the vertical direction (see arrows Y1 and Y2). The electrolytic plating solution L that flows from the upper side in the vertical direction toward the lower side in the vertical direction flows along the pair of substrate surfaces of the substrate 2 and is also supplied to the inside of the through hole 201.
During the electroplating, the entire substrate 2 is immersed in the electroplating solution L.

  Here, in the present embodiment, since the opening diameter of the first discharge port 111B is larger than the opening diameter of the second discharge port 112B, electrolysis flowing on one substrate surface of the substrate 2 (the surface on the first tank 111 side). The average flow rate of the plating solution L is faster than the average flow rate of the electrolytic plating solution L flowing on the other substrate surface (the surface on the second tank 112 side). Therefore, as shown in the enlarged cross-sectional view of FIG. 6, a difference in speed between the electrolytic plating solution L flowing on one substrate surface and the electrolytic plating L flowing on the other substrate surface is generated, so that the flow from the slow side to the fast side The electrolytic plating solution L is drawn into the through hole 201 toward the top, and electrolytic plating is performed in the through hole 201. As a result, electrolytic plating is performed in the through hole 201. Therefore, the 1st discharge port 111B and the 2nd discharge port 112B become an adjustment means.

The average flow rate of the electrolytic plating solution L flowing on the substrate surface of the substrate 2 is the flow rate V1 per unit time of the electrolytic plating solution L discharged from the first discharge port 111B, and the electrolytic plating discharged from the second discharge port 112B. It can be calculated from the flow rate V2 of the liquid L per unit time.
First, the flow rate V1 per unit time of the electrolytic plating solution L discharged from the first discharge port 111B is measured. Further, the flow rate V2 per unit time of the electrolytic plating solution L discharged from the second discharge port 112B is measured. In the present embodiment, since the shape of the tank 11 is a rectangular parallelepiped or a cube, one substrate of the substrate 2 is obtained by dividing V1 by an area S1 surrounded by the substrate 2, the partition wall 113, and the tank 11, as shown in FIG. The average flow velocity of the electrolytic plating solution L flowing on the surface can be calculated.
Similarly, as shown in FIG. 11, the average flow velocity of the electrolytic plating solution L flowing on the other substrate surface of the substrate 2 is calculated by dividing V2 by the area S2 surrounded by the substrate 2, the partition wall 113, and the tank. Can do.
Moreover, as shown in FIG. 12, the wall surface comprised by the partition 113 and the board | substrate 2 may be inclined. In this case, it is possible to calculate the average flow velocity of the electrolytic plating solution L flowing on the substrate surface of the substrate 2 by calculation simulation or the like.
The difference between the average flow velocity of the electrolytic plating solution L flowing on one substrate surface of the substrate 2 and the average flow velocity of the electrolytic plating solution L flowing on the other substrate surface of the substrate 2 is preferably 10 m / s or more. .
In addition, the mask M is abbreviate | omitted in the expanded sectional view of FIG.
In the drawing of FIG. 11, the anode 12 is omitted, but the average flow velocity may be calculated in consideration of the thickness of the anode 12 and the like.

Furthermore, when performing electrolytic plating, the electrolytic plating solution L is supplied from the tank 14 to the first tank 111 as needed, and the supply amount of the electrolytic plating solution L from the tank 14 to the first tank 111 is as follows. More than the amount of electrolytic plating solution L discharged from Similarly, when performing electrolytic plating, the electrolytic plating solution L is supplied from the tank 14 to the second tank 112 as needed, and the supply amount of the electrolytic plating solution L from the tank 14 to the second tank 112 is the second tank. More than the amount of electrolytic plating solution L discharged from 112.
Therefore, the electrolytic plating solution L overflows from the upper part of the first tank 111 and the second tank 112. The overflowed electrolytic plating solution L flows in the direction of the arrow Y3 and is collected in the tank 14.
Furthermore, the electrolytic plating solution L is supplied to the tank 14 from the first outlet 111B and the second outlet 112B.
The electrolytic plating solution L in the tank 14 is supplied again to the tank 11 through the pipes 16 and 17 and the pumps P1 and P2.
If necessary, the metal concentration or the like of the electrolytic plating solution L in the tank 14 may be analyzed to adjust the metal concentration or the like of the electrolytic plating solution L in the tank 14.
Further, the amount of the electrolytic plating solution L per unit time supplied from the pipe 16 into the first tank 111 is the same as the amount of the electrolytic plating solution L per unit time supplied from the pipe 17 into the second tank 112. May be different.

  Through the electrolytic plating process as described above, as shown in FIG. 5A, a conductor 26 serving as a via is formed in the through hole 201, and a metal film by electrolytic plating is formed on the metal film 22. (The metal film 23 indicates a metal film 22 and a plating film on the metal film 22).

Next, the substrate 2 that has been subjected to electrolytic plating is taken out of the tank 11 and cleaned.
Thereafter, the portion of the metal film 22 on which the mask M has been formed is removed by flash etching, and a first circuit layer 25 and a second circuit layer 24 are formed as shown in FIG.
Through the above steps, the flexible circuit board 27 obtained by subjecting the substrate 2 to electrolytic plating can be obtained.

Next, the effect of this embodiment is demonstrated.
The average flow velocity (linear velocity) of the electrolytic plating solution L flowing on one substrate surface (first tank 111 side) of the substrate 2 is the average flow velocity of the electrolytic plating solution L flowing on the other substrate surface (second tank 112 side) ( It is faster than (line speed). Therefore, as shown in the enlarged cross-sectional view of FIG. 6, a difference in speed between the electrolytic plating solution L flowing on one substrate surface and the electrolytic plating L flowing on the other substrate surface is generated, so that the flow from the slow side to the fast side The electrolytic plating solution L is drawn into the through hole 201 toward the top, and electrolytic plating is performed in the through hole 201. Thereby, electrolytic plating can be reliably performed in the through hole 201, and generation of voids or the like in the plating film in the through hole 201 can be suppressed.
In the present embodiment, the substrate 2 is immersed in the electrolytic plating solution L in the tank 11, and the electrolytic plating solution L in the tank 11 is moved from the upper side in the vertical direction toward the lower side. It flows along the surface.
Thus, the electrolytic plating solution L is prevented from staying near the surface of the substrate 2, and the fresh electrolytic plating solution L is always in contact with the substrate 2. Thereby, a desired plating film can be stably formed on the substrate 2.

In the present embodiment, the electrolytic plating solution L in the tank 11 is made to flow from the upper side in the vertical direction toward the lower side. Since the electroplating solution L flows according to gravity, the electroplating solution L can be flowed smoothly. Moreover, the flow of the electrolytic plating solution L is stabilized by flowing the electrolytic plating solution L according to gravity.
Furthermore, complication of the apparatus configuration of the processing apparatus 1 can be suppressed by flowing the electrolytic plating solution L from the upper side in the vertical direction toward the lower side according to gravity.
Furthermore, in this embodiment, the substrate 2 is immersed in the electrolytic plating solution L in the tank 11 and the substrate 2 of the substrate 2 is moved from the upper side in the vertical direction toward the lower side. It flows along the surface and is discharged.
Thereby, even if the foreign matter is mixed in the electrolytic plating solution L, the foreign matter can be discharged from the tank 11. For this reason, it is possible to prevent foreign matter from adhering to the substrate 2.

Moreover, in this embodiment, the board | substrate 2 is a board | substrate for flexible circuit boards, and the thickness is comparatively thin with 10-200 micrometers.
When such a board | substrate 2 is immersed in the electroplating L, the board | substrate 2 will float in the electroplating liquid L. FIG. For this reason, it may be difficult to apply desired electrolytic plating to the substrate 2 when the substrate 2 approaches or separates from the anode.
On the other hand, in this embodiment, the electrolytic plating solution L is allowed to flow while the substrate 2 is immersed in the electrolytic plating solution L. Since the electrolytic plating solution L flows from the upper side in the vertical direction toward the lower side on the one substrate surface side and the other substrate surface side of the substrate 2, the substrate 2 is prevented from fluctuating in the electrolytic plating solution L. . Thereby, desired electrolytic plating can be applied to the substrate 2. In addition, since the wobbling of the substrate 2 can be prevented, it is possible to prevent the substrate 2 from being wrinkled or damaged.

  Furthermore, in this embodiment, the electrolytic plating solution L is overflowed from the tank 11 to perform electrolytic plating. By making it overflow, electroplating can be performed with respect to the board | substrate 2, maintaining the state which the board | substrate 2 immersed in the electroplating liquid L reliably.

  In the present embodiment, one substrate 2 is disposed in the tank 11 and electrolytic plating is performed. Therefore, the tank 11 may have a size that allows the substrate 2 to be disposed and allows the electrolytic plating solution L to flow on the substrate surface side of the substrate 2. Thereby, the enlargement of the processing apparatus 1 can be suppressed.

It should be noted that the present invention is not limited to the above-described embodiments, and modifications, improvements, and the like within the scope that can achieve the object of the present invention are included in the present invention.
For example, in the above-described embodiment, the electrolytic plating solution L that flows on one substrate surface (on the first tank 111 side) of the substrate 2 by making the opening diameter of the first discharge port 111B larger than the opening diameter of the second discharge port 112B. The average flow velocity (linear velocity) is made faster than the average flow velocity (linear velocity) of the electrolytic plating solution L flowing on the other substrate surface (second tank 112 side), but is not limited thereto.
For example, as shown in FIG. 7, the pipe 18 is connected to the first outlet 111B, and the electrolytic plating solution is sucked by the pump P3. Similarly, the pipe 19 is connected to the second discharge port 112B, and the electrolytic plating solution is sucked by the pump P4. By making the suction force of the pump P3 larger than the suction force of the pump P4, the average flow velocity (linear velocity) of the electrolytic plating solution L flowing on one substrate surface (first tank 111 side) of the substrate 2 is set to the other substrate. You may make it faster than the average flow velocity (linear velocity) of the electroplating liquid L which flows through a surface (the 2nd tank 112 side). In this case, the first discharge port 111B may be larger than the second discharge port 112B, but the first discharge port 111B may have the same size as the second discharge port 112B. .

Furthermore, as shown in FIG. 8, the first pressurizing means 31 that pressurizes the electrolytic plating solution in the first tank from the upper side to the lower side and discharges it from the first outlet, and the electrolytic plating in the second tank. A second pressurizing unit 32 that pressurizes the liquid from the upper side to the lower side and discharges it from the first discharge port. The pressure applied to the electrolytic plating solution from the first pressurizing unit is electrolyzed from the second pressurizing unit. By making the pressure larger than the pressure applied to the plating solution, the average flow velocity (linear velocity) of the electrolytic plating solution L flowing on one substrate surface (first tank 111 side) of the substrate 2 is set to the other substrate surface (second tank 112 side). ) May be made faster than the average flow velocity (linear velocity) of the electrolytic plating solution L flowing through. In this case, the first discharge port 111B may be larger than the second discharge port 112B, but the first discharge port 111B may have the same size as the second discharge port 112B. .
Furthermore, the pumps P3 and P4 and the pressurizing means 31 and 32 may be provided.

In the embodiment, the electroplating apparatus 1 is used, but the present invention is not limited to this. As shown in FIG. 9, the anode of the processing apparatus 1 may be removed, and the processing apparatus of the present invention may be an electroless plating apparatus 1A.
The processing apparatus 1A shown in FIG. 9 is the same as the processing apparatus 1 except that the anode is removed from the processing apparatus 1. The tank 14 and the tank 11 are filled with an electroless plating solution L.
Further, the processing apparatus 1A shown in FIG. 9 may be an etching apparatus for etching a metal layer or the like on the substrate surface. Furthermore, the processing apparatus 1A may be a developing device. The photosensitive resin layer on the substrate surface is irradiated with light, and a developing solution for removing unexposed portions is filled in the tank 14 and the tank 11, and the unexposed portions of the photosensitive resin layer on the substrate surface are filled by the processing apparatus 1A. May be removed.
Furthermore, the processing apparatus 1A may be a peeling apparatus that peels off a mask or the like formed on the substrate. In this case, the tank 14 and the tank 11 may be filled with a stripping solution for stripping the mask or the like.

Moreover, as shown in FIG. 10, it is good also considering the processing apparatus of this invention as the water washing apparatus 1B. The water washing apparatus 1B has the same configuration as the processing apparatus 1 except that the anode of the processing apparatus 1 is removed and the tanks 14A to 14C are provided.
The tank 14A of the water washing apparatus 1B is filled with water before substrate cleaning.
Water is supplied from the tank 14 </ b> A to the tank 11, and the water flows in the tank 11 from the upper side to the lower side in the vertical direction, and the substrate 2 is cleaned.
Thereafter, the washed water is discharged from the discharge port 112 and supplied to the tank 14B.
The water in the tank 14B is supplied to the tank (septic tank) 14C, and the water is purified in the tank 14C to remove impurities such as metals. The water cleaned in the tank 14C is supplied to the tank 14A. The water supplied to the tank 14A will be supplied to the tank 11 again.
In such a water washing apparatus 1B, clean water always comes into contact with the substrate 2, and the substrate 2 can be prevented from being contaminated. Further, the inside of the through hole 201 can be reliably cleaned.
Furthermore, in the method of simply immersing the substrate in the water tank and washing with water, it is difficult to reliably wash with one water tank, and it is necessary to provide a plurality of water tanks and perform water washing in multiple stages.
On the other hand, when the water washing apparatus 1B is used, clean water always comes into contact with the substrate 2, so that it is not necessary to perform water washing in multiple stages, and the processing process of the substrate 2 can be simplified.
In the water washing apparatus 1B, the water in the tank 14B may be discarded without being cleaned in the tank 14C.

  Furthermore, in the said embodiment, although arrange | positioned so that the board | substrate surface of the board | substrate 2 might become parallel to a perpendicular direction in the tank 11, it is not restricted to this, As shown in FIG. May be arranged so that is perpendicular to the vertical direction.

DESCRIPTION OF SYMBOLS 1 Processing apparatus 1A Processing apparatus 1B Flushing apparatus 2 Substrate 11 Tank 12 Anode 14 Tank 14A Tank 14B Tank 14C Tank 16 Pipe 17 Pipe 18 Pipe 19 Pipe 20 Base material 21 Insulating layer 22 Metal film 23 Metal film 24 Second circuit layer 25 One circuit layer 26 Conductor 27 Flexible circuit board 31 First pressurizing means 32 Second pressurizing means 111 First tank 111A First supply port 111B First discharge port 112 Second tank 112A Second supply port 112B Second discharge port 113 Partition wall 113A Plate material 113A1 Opening 201 Through hole L Electrolytic plating solution (liquid)
M Mask P1 Pump P2 Pump P3 Pump P4 Pump

Claims (12)

A substrate processing method for processing a substrate by bringing a liquid into contact with the through hole of the substrate in which a through hole penetrating from one substrate surface side to the other substrate surface side of the substrate is formed,
A step of supplying the liquid, the step of preparing the tank comprising a partition that holds the substrate and partitions the tank together with the held substrate into a first tank and a second tank;
Holding the substrate on the partition wall and installing the substrate in the tank;
The liquid is supplied into the first tank and the second tank, the substrate is immersed in the liquid, and the liquid is discharged from each of the first tank and the second tank, so that the liquid is discharged to the substrate. And flowing along the one substrate surface and the other substrate surface, and contacting the liquid in the through hole,
In the step of flowing the liquid along one substrate surface and the other substrate surface of the substrate and contacting the liquid in the through hole,
A substrate processing method in which an average flow velocity of the liquid flowing along one substrate surface of the substrate is different from an average flow velocity of the liquid flowing along the other substrate surface of the substrate. In the processing method of the board | substrate of Claim 1,
In the tank, the substrate is held by the partition so that a pair of substrate surfaces are substantially parallel to the vertical direction,
In the first tank and the second tank, the liquid is allowed to flow along the one substrate surface and the other substrate surface of the substrate by flowing the liquid from the upper side to the lower side in the vertical direction. . In the processing method of the board | substrate of Claim 1 or 2,
By setting the first discharge port of the first tank and the second discharge port of the second tank to different sizes, the average flow velocity of the liquid flowing along one substrate surface of the substrate is The substrate processing method wherein the average flow velocity of the liquid flowing along the other substrate surface of the substrate is different. In the processing method of the board | substrate of Claim 1 or 2,
The suction force of the first pump for drainage connected to the first discharge port of the first tank, and the suction force of the second pump for drainage connected to the second discharge port of the second tank The average flow velocity of the liquid flowing along one substrate surface of the substrate is different from the average flow velocity of the liquid flowing along the other substrate surface of the substrate. Processing method. In the processing method of the board | substrate of Claim 1 or 2,
The liquid supplied into the first tank is pressurized and discharged from the first outlet of the first tank, and the liquid supplied into the second tank is pressurized and discharged to the second tank. Drain from
The pressure applied to the liquid supplied into the first tank and the pressure applied to the liquid supplied to the second tank are different from each other along the one substrate surface of the substrate. A substrate processing method in which an average flow velocity of the liquid flowing is different from an average flow velocity of the liquid flowing along the other substrate surface of the substrate. In the processing method of the board | substrate as described in any one of Claims 1 thru | or 5,
The liquid is a plating solution,
In the step of flowing the liquid along one substrate surface and the other substrate surface of the substrate and contacting the liquid in the through hole,
A processing method for a substrate, wherein a plating process is performed in the through hole of the substrate. In the substrate processing apparatus for processing the substrate by bringing a liquid into contact with the through hole of the substrate in which a through hole penetrating from one substrate surface side to the other substrate surface side of the substrate is formed,
A tank provided with a partition for supplying the liquid therein, immersing the substrate in the supplied liquid, holding the substrate, and partitioning the tank together with the held substrate into a first tank and a second tank When,
Supply means for supplying the liquid into the first tank and the second tank of the tank,
The substrate processing apparatus is configured such that the liquid supplied from the supply unit flows along one substrate surface and the other substrate surface of the substrate and contacts a through hole of the substrate.
An apparatus for processing a substrate, comprising: adjusting means for differentiating an average flow velocity of the liquid flowing along one substrate surface of the substrate and an average flow velocity of the liquid flowing along the other substrate surface of the substrate. The substrate processing apparatus according to claim 7,
The first supply port of liquid in the first tank and the second supply port of liquid in the second tank are above the substrate held by the partition wall,
The first discharge port of the liquid in the first tank and the second discharge port of the liquid in the second tank are vertically lower than the substrate held by the partition wall,
The substrate processing apparatus causes the liquid to flow vertically when the liquid flows from the first supply port toward the first discharge port and also flows from the second supply port toward the second discharge port. A substrate processing apparatus configured to flow along one substrate surface and the other substrate surface of the substrate from an upper side to a lower side in the direction. The substrate processing apparatus according to claim 7 or 8,
The substrate processing apparatus, wherein the adjusting means includes a first discharge port for the liquid in the first tank and a second discharge port for the liquid in the second tank that is different in size from the first discharge port. . The substrate processing apparatus according to claim 7 or 8,
The adjusting means includes a first pump for drainage connected to the first outlet of the first tank;
A second pump for drainage connected to the second outlet of the second tank;
The substrate processing apparatus, wherein the suction force of the first pump is different from the suction force of the second pump. The substrate processing apparatus according to claim 7 or 8,
The adjusting means pressurizes the liquid supplied into the first tank and discharges it from the first discharge port of the first tank;
A second pressurizing unit configured to pressurize the liquid supplied into the second tank and discharge the liquid from the second discharge port of the second tank;
A substrate processing apparatus in which a pressure applied to the liquid from the first pressurizing unit is different from a pressure applied to the liquid from the second pressurizing unit. In the processing apparatus of the board | substrate as described in any one of Claims 7 thru | or 11,
The liquid is a plating solution,
The processing apparatus is a substrate processing apparatus which is an apparatus for performing a plating process in the through hole of the substrate.

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