WO2011105072A1

WO2011105072A1 - Substrate treating method and substrate treating apparatus

Info

Publication number: WO2011105072A1
Application number: PCT/JP2011/001025
Authority: WO
Inventors: 牧野　夏木; 加藤　正明; 近藤　正芳
Original assignee: 住友ベークライト株式会社
Priority date: 2010-02-24
Filing date: 2011-02-23
Publication date: 2011-09-01
Also published as: TW201139754A

Abstract

A substrate treating apparatus (1) is provided with: a bath (11) wherein a substrate treatment solution (TL) is supplied thereto, and a substrate (PB) is immersed in the supplied substrate treatment solution (TL); and a holding section (13) which holds the substrate (PB) such that the surface of the substrate (PB) disposed in the bath (11) is substantially parallel to the vertical direction. The treating apparatus (1) is configured such that, when the substrate treatment solution (TL) is made to flow from the supply port (111) of the bath (11) toward the discharge port (112) thereof, the substrate treatment solution (TL) flows from the upper side toward the lower side in the vertical direction along the substrate surface. Thus, a substrate treating method and the substrate treating apparatus, whereby the substrate can be stably treated, are provided.

Description

Substrate processing method and substrate processing apparatus

The present invention relates to a substrate processing method and a substrate processing apparatus for processing a substrate such as a printed wiring board with a substrate processing solution.

Conventionally, circuit boards are manufactured as follows.
A double-sided copper-clad laminate with copper foil attached to both sides of the substrate is prepared. Via holes are formed in the double-sided copper-clad laminate, and plating is further performed on the via holes and the double-sided copper-clad laminate. Thereafter, the double-sided copper-clad laminate is processed to form a circuit (Patent Document 1).

Also, as one of semiconductor circuit manufacturing processes, a substrate such as a printed wiring board may be treated with a substrate treatment solution. However, when it is desired to process only the substrate processing region on one surface of the substrate, for example, the other surface that is not processed is sealed with a substrate support jig or the like, and the periphery of the substrate processing region that is not processed is sealed with a sealing material. . Currently, there are various proposals for the substrate processing apparatus as described above (Patent Documents 2 and 3).

Japanese Patent Laid-Open No. 11-186737 Japanese Patent Laying-Open No. 2005-052702 JP 2005-286162 A

In the conventional substrate processing method, the double-sided copper-clad laminate is immersed in a plating solution when performing plating. However, with this manufacturing method, it has been difficult to stably obtain a desired plating film. Possible causes for the failure to obtain the desired plating film include retention of the plating solution and adhesion of foreign matter.

Stirring the plating solution by bubbling, etc. is also performed, but the plating tank is relatively large, so it is extremely difficult to reliably retain the plating solution and prevent foreign matter from adhering even if it is stirred by bubbling. It was difficult. In addition, in this way, the problem that retention occurs and the problem that foreign matter adheres are not only when performing plating, but also when immersing a double-sided copper-clad laminate in water and washing it with water, or laminating double-sided copper in an etching solution This also occurs when etching is performed by immersing the plate.

In the conventional substrate processing method, when performing plating, the double-sided copper-clad laminate is immersed in the plating solution as described above. However, with this manufacturing method, it has been difficult to stably obtain a desired plating film in the via hole. In addition, the subject that a desired process cannot be implemented in a via hole arises not only when performing plating but also when the double-sided copper-clad laminate is immersed in water and washed.

In the conventional substrate processing apparatus as described above, since the substrate is simply immersed in the substrate processing solution, it is actually difficult to satisfactorily process the substrate processing region in a short time.

In addition, as described above, sealing the other surface of the substrate that is not processed with a substrate support jig or the like, and sealing the periphery of the substrate processing region that is not processed with a sealing material are complicated and produce semiconductor circuits. Will reduce the sex.

A first substrate processing method of the present invention is a substrate processing method in which a substrate processing solution is brought into contact with a substrate for processing, and the substrate surface is parallel to the vertical direction or tilted with respect to the vertical direction. A step of arranging the substrate, a step of immersing the substrate in the substrate processing solution in the tank, and a step of flowing the substrate processing solution along the substrate surface from the upper side in the vertical direction toward the lower side; And discharging the substrate processing solution that has flown from the tank.

According to this invention, the substrate processing solution in the tank is allowed to flow along the substrate surface from the upper side in the vertical direction toward the lower side in a state where the substrate is immersed in the substrate processing solution in the tank. Accordingly, the substrate processing solution is prevented from staying near the substrate surface, and desired processing can be stably performed on the substrate.
Furthermore, in the present invention, the substrate processing solution in the tank flows from the upper side in the vertical direction toward the lower side. Since the substrate processing solution flows according to gravity, the substrate processing solution can flow smoothly.
Moreover, in this invention, the foreign material in a substrate processing solution can be discharged | emitted from a tank by flowing the substrate processing solution in a tank along a substrate surface toward the downward side from the upper side of a perpendicular direction. Thereby, it can suppress that a foreign material adheres to a board | substrate, and can perform a desired process stably.

Furthermore, the first substrate processing apparatus of the present invention is a substrate processing apparatus for processing by bringing a substrate processing solution into contact with a substrate, and the substrate processing solution is supplied to the inside and the substrate is immersed in the supplied substrate processing solution. A tank to be stacked, and a holding unit for holding the substrate so that the substrate surface disposed inside the tank is parallel to or inclined with respect to the vertical direction. The substrate processing solution discharge port of the tank is vertically lower than the substrate held by the holding unit, and is vertically lower than the substrate held by the holding unit, and the substrate processing solution is transferred from the tank supply port to the discharge port. When the substrate processing solution is caused to flow toward the substrate, the substrate processing solution is configured to flow along the substrate surface from the upper side in the vertical direction toward the lower side.

According to the present invention, a substrate processing method and a substrate processing apparatus capable of stably performing a desired process are provided.

According to a second substrate processing method of the present invention, a substrate processing solution is brought into contact with a through hole of a substrate in which a through hole penetrating from one substrate surface side to the other substrate surface side is formed. A substrate processing method for processing, which is a tank to which a substrate processing solution is supplied, and prepares a tank that includes a partition that holds a substrate and partitions the tank into a first tank and a second tank together with the held substrate. A step of holding the substrate in the partition and setting the substrate in the tank; and supplying the substrate processing solution into the first tank and the second tank to immerse the substrate in the substrate processing solution; Discharging the plating solution from each of the one tank and the second tank to flow the substrate processing solution along one substrate surface and the other substrate surface of the substrate, and bringing the substrate processing solution into contact with the through hole; Substrate treatment solution on one side of the substrate. And flowing along the other substrate surface, and in the step of bringing the substrate processing solution into contact with the through hole, the average flow rate of the substrate processing solution flowing along one substrate surface of the substrate and the other substrate surface of the substrate The average flow rate of the substrate processing solution that flows through is different.

According to the present invention, the average flow velocity of the substrate processing solution flowing along one substrate surface of the substrate is different from the average flow velocity of the substrate processing solution flowing along the other substrate surface of the substrate. Thereby, the substrate processing solution is drawn into the through hole. Therefore, the inside of the through hole can be reliably processed with the substrate processing solution.

Further, the second substrate processing apparatus of the present invention contacts the substrate processing solution in the through hole of the substrate in which the through hole penetrating from one substrate surface side to the other substrate surface side is formed. In a substrate processing apparatus for processing a substrate, a substrate processing solution is supplied inside, the substrate is immersed in the supplied substrate processing solution, the substrate is held, and the tank is held together with the held substrate, the first tank and the second tank. A tank provided with a partition partitioning into two tanks, and a supply means for supplying a substrate processing solution into each of the first tank and the second tank of the tank, and the substrate processing apparatus is provided with the substrate processing supplied from the supply means The solution flows along one substrate surface and the other substrate surface of the substrate, and is configured to contact the through hole of the substrate, and the average flow rate of the substrate processing solution flowing along one substrate surface of the substrate; On the other side of the board Having adjustment means for varying the average flow velocity of the substrate processing solution flowing through me.

According to the present invention, there is provided a processing method and a processing apparatus capable of performing a desired processing in the through hole.

A third substrate processing apparatus of the present invention includes a box-shaped substrate holding member in which an opening hole for exposing a substrate processing region on one surface of the substrate is formed on one surface and an insertion port is formed on the upper surface, and a substrate holding And an expandable / contractible member that is disposed inside the other surface of the member and presses the inserted substrate against the inner peripheral surface of the opening hole.

Therefore, in the substrate processing apparatus of the present invention, an opening hole is formed in one surface of the box-shaped substrate holding member to expose the substrate processing region on one surface of the substrate, and an insertion port is formed in the upper surface. A substrate disposed inside the substrate holding member is brought into contact with the inner surface of the substrate holding member so that the substrate processing region is exposed to the opening hole. For example, the substrate processing solution can be supplied only to the substrate processing region by immersing the substrate holding member on which the substrate is set in this manner in the substrate processing solution in the substrate processing region accommodated in the solution holding container.

In the substrate processing apparatus of the present invention, for example, the substrate processing solution is supplied only to the substrate processing region by immersing the substrate holding member on which the substrate is set in the substrate processing solution in the substrate processing region accommodated in the solution holding container. can do. Therefore, only the substrate processing region on one surface of the substrate can be processed easily and quickly with the substrate processing solution.

A fourth substrate processing apparatus of the present invention includes a solution holding container that contains a substrate processing solution and in which the substrate is immersed, and a solution supply mechanism that sequentially supplies the substrate holding solution by dropping it from above to the solution holding container. And a solution turbulence mechanism that pumps the substrate processing solution falling downward from above to the substrate processing region on one surface of the substrate.

Therefore, in the substrate processing apparatus of the present invention, the substrate is immersed in the substrate processing solution contained in the solution holding container. The solution supply mechanism sequentially supplies the substrate processing solution by dropping the substrate processing solution from above to the solution holding container. Thus, the solution turbulence mechanism pumps the substrate processing solution falling downward from above to the substrate processing region on one surface of the substrate. For this reason, the substrate processing region on one surface of the substrate is not only simply dropped from the upper side to the lower side, but is also pumped as a turbulent flow.

In the substrate processing apparatus of the present invention, the substrate processing solution on one surface of the substrate is not only simply dropped from the upper side to the lower side, but is also pumped as a turbulent flow. Therefore, the substrate processing region on one surface of the substrate is satisfactorily processed by the turbulent substrate processing solution.

In the third substrate processing method of the present invention, the substrate is immersed in a substrate processing solution contained in a solution holding container, the substrate processing solution is dropped into the solution holding container from the top to the bottom, and sequentially supplied, and from above to below. The substrate processing solution falling on the substrate is pumped to the substrate.

The fifth substrate processing apparatus of the present invention includes a solution holding container that contains a substrate processing solution and in which the substrate is immersed, and a solution that pumps and sucks the substrate processing solution to the substrate processing region on one surface of the immersed substrate. A turbulent flow mechanism.

Therefore, in the substrate processing apparatus of the present invention, the substrate is immersed in the substrate processing solution contained in the solution holding container. The solution supply mechanism pumps and sucks the substrate processing solution into the substrate processing region in such a state. For this reason, the substrate processing region on one surface of the substrate is processed by the substrate processing solution that is pumped and sucked.

In the substrate processing apparatus of the present invention, the substrate processing region on one surface of the substrate is processed by the substrate processing solution that is pumped and sucked. For this reason, it is possible to easily and quickly process only the substrate processing region on one surface of the substrate with the substrate processing solution that becomes a turbulent flow.

In the fourth substrate processing method of the present invention, the substrate holding member is immersed in the substrate processing solution accommodated in the solution holding container, and the substrate processing solution is pumped and sucked to one surface of the immersed substrate processing region.

The various components of the present invention do not necessarily have to be independent of each other. A plurality of components are formed as a single member, and a single component is formed of a plurality of members. It may be that a certain component is a part of another component, a part of a certain component overlaps with a part of another component, or the like. Further, the vertical direction referred to in the present invention does not have to be perfectly geometrically vertical, and may be inclined in an arbitrary direction, for example.

The above-described object and other objects, features, and advantages will be further clarified by a preferred embodiment described below and the following accompanying drawings.

It is sectional drawing which shows the substrate processing apparatus concerning embodiment of this invention. It is sectional drawing which shows the modification of the substrate processing apparatus of this invention. It is sectional drawing which shows the modification of the substrate processing apparatus of this invention. It is process sectional drawing which shows the manufacturing process of a flexible circuit board. It is process sectional drawing which shows the manufacturing process of a flexible circuit board. It is sectional drawing which shows the modification of the substrate processing apparatus of this invention. It is sectional drawing which shows the modification of the substrate processing apparatus of this invention. It is sectional drawing which shows the modification of the substrate processing apparatus of this invention. It is sectional drawing which shows the modification of the substrate processing apparatus of this invention. It is sectional drawing which shows the modification of the substrate processing apparatus of this invention. It is sectional drawing which shows the modification of the substrate processing apparatus of this invention. It is sectional drawing which shows the substrate processing apparatus concerning one Embodiment of this invention. It is a figure which shows a partition. It is a figure which shows a partition. It is process drawing which shows a substrate processing method. It is process drawing which shows a substrate processing method. It is a schematic diagram which shows a mode that an electrolytic plating solution enters into the through-hole of a board | substrate. It is sectional drawing which shows the substrate processing apparatus concerning the modification of this invention. It is sectional drawing which shows the substrate processing apparatus concerning the modification of this invention. It is sectional drawing which shows the substrate processing apparatus concerning the modification of this invention. It is sectional drawing which shows the substrate processing apparatus concerning the modification of this invention. It is sectional drawing at the time of seeing a substrate processing apparatus from the upper side of a tank. It is sectional drawing which shows the substrate processing apparatus concerning the modification of this invention. It is sectional drawing which shows the substrate processing apparatus concerning the modification of this invention. 1 is a schematic exploded perspective view showing a substrate processing apparatus according to an embodiment of the present invention. It is a typical vertical side view which shows the internal structure of a substrate processing apparatus. It is a typical front view which shows the structure of the substrate holding member of a substrate processing apparatus. It is process drawing which shows the process of setting a board | substrate to a board | substrate holding member. It is a typical vertical side view which shows the internal structure of the substrate processing apparatus of one modification. It is a typical vertical side view which shows the internal structure of the substrate processing apparatus of another modification. It is a typical vertical side view which shows the internal structure of the substrate processing apparatus of embodiment of this invention. It is a typical disassembled perspective view which shows a substrate processing apparatus. It is a typical front view which shows the structure of a substrate processing apparatus. It is process drawing which shows the process of setting a board | substrate to the substrate holding member of a substrate processing apparatus. It is a typical vertical side view which shows the substrate processing apparatus of embodiment of this invention. It is a typical disassembled perspective view which shows the internal structure of a substrate processing apparatus. It is a typical front view which shows the structure of a substrate processing apparatus. It is process drawing which shows the process of setting a board | substrate to the substrate holding member of a substrate processing apparatus.

Hereinafter, a first embodiment of the present invention will be described with reference to the drawings.
First, the outline of the substrate processing apparatus 1 of the present embodiment will be described with reference to FIG.
The processing apparatus 1 is an apparatus that processes the substrate PB by bringing the substrate processing solution TL into contact with the substrate PB. In the processing apparatus 1, the substrate processing solution TL is supplied to the inside of the processing apparatus 1, and the substrate 11 in which the substrate PB is immersed in the supplied substrate processing solution TL, and the substrate surface of the substrate PB disposed in the tank 11 are in the vertical direction. And a holding portion 13 for holding the substrate PB so as to be substantially parallel to.
The substrate processing solution TL supply port 111 in the tank 11 is vertically above the substrate PB held by the holding unit 13, and the substrate processing solution TL discharge port 112 in the tank 11 is held by the holding unit 13. It is below the substrate PB in the vertical direction.
When the processing apparatus 1 flows the substrate processing solution TL from the supply port 111 of the tank 11 toward the discharge port 112, the substrate processing solution TL flows along the substrate surface from the upper side in the vertical direction toward the lower side. It is configured.

Next, the processing apparatus 1 will be described in detail.
The substrate processing solution TL is a chemical solution, in this embodiment, an electrolytic plating solution TL. That is, the processing apparatus 1 is an electrolytic plating apparatus in this embodiment.
The tank 11 is, for example, a hard PVC tank.
The tank 11 is supplied with an electrolytic plating solution TL. A supply port 111 for the electrolytic plating solution TL is formed on the side surface of the tank 11. The supply port 111 is positioned above the substrate PB arranged in the tank 11 in the vertical direction.
Further, a discharge port 112 for the electrolytic plating solution TL is formed on the bottom surface of the tank 11. In the present embodiment, a plurality of discharge ports 112 are formed on the bottom surface of the tank 11. By forming a plurality of discharge ports 112 in this way, the electrolytic plating solution TL can be discharged smoothly along the substrate surface of the substrate PB. However, the number of the discharge ports 112 may be one.
The discharge port 112 is located on the lower side in the vertical direction than the substrate PB disposed in the tank 11. Further, the discharge port 112 is located on the lower side in the vertical direction than the supply port 111.
In addition, as shown in FIG. 2, the piping 17 and the pump P2 are connected to the discharge port 112 as needed, and the electroplating discharged from the discharge port 112 by sucking the electrolytic plating solution TL with the pump P2. The flow rate of the liquid TL may be adjusted.
In the present embodiment, the discharge port 112 and the second tank 14 are not connected by piping, and the electrolytic plating solution TL discharged from the discharge port 112 naturally falls into the second tank 14.
Moreover, you may provide the adjustment means which adjusts the quantity of the electroplating liquid TL discharged | emitted from the tank 11, as needed. For example, a plug that blocks a part of the discharge ports 112 may be provided as the adjusting means, and an adjusting unit that adjusts the size of the discharge ports 112 (for example, a part of the discharge ports 112 is blocked to A plate member for adjusting the degree of opening may be provided.
In the present embodiment, one substrate PB is disposed in the tank 11 when performing electrolytic plating.

A plurality of anodes 12 are installed in the tank 11. In the present embodiment, two anodes 12 are installed. One anode 12 is disposed to face one substrate surface of the substrate PB disposed in the tank 11, and the other anode 12 is opposed to the other substrate surface of the substrate PB disposed in the tank 11. Are arranged to be. The anode 12 is, for example, phosphorous copper.

The holding unit 13 holds the substrate PB and connects the metal film 22 (see FIG. 4B) on the surface of the substrate PB to a cathode (not shown). The holding unit 13 includes, for example, a clamping unit that sandwiches the upper end of the substrate PB, and is made of a conductive material such as metal. The holding unit 13 holds the substrate PB and can be driven in the vertical direction, and arranges the substrate PB in the tank 11 or removes the substrate PB from the tank 11.
The board | substrate PB hold | maintained at the holding | maintenance part 13 will be arrange | positioned in the tank 11 so that a board | substrate surface may become substantially parallel to a perpendicular direction.

The processing apparatus 1 includes a second tank (conditioning tank) 14 that is filled with an electrolytic plating solution TL to be supplied to the tank 11. Since the second tank 14 also serves to receive the electrolytic plating solution TL that has overflowed from the tank 11, the second tank 14 is disposed on the lower side in the vertical direction of the tank 11.
Here, as shown in FIG. 3, a bubbling device 15 may be connected to the second tank 14 in order to stir the electrolytic plating solution TL in the second tank 14. By doing in this way, the density | concentration of the electroplating liquid TL in the 2nd tank 14 can be made uniform. The bubbling device 15 may be provided in the processing device 1 shown in FIG.
The discharge port of the electrolytic plating solution in the second tank 14 and the supply port 111 of the tank 11 are connected by a pipe 16. The electrolytic plating solution TL is supplied from the second tank 14 to the tank 11 via the pipe 16 and the pump P1 connected to the pipe 16.
The pipe 16 is provided with a filter (not shown). Foreign matter in the electrolytic plating solution TL passing through the pipe 16 can be removed with a filter.

Next, a substrate processing method for the substrate PB using the processing apparatus 1 will be described.
First, a base material 20 as shown in FIG. 4 (A) is prepared.
The base material 20 includes an insulating layer 21 and a metal film 22 (for example, a copper film) attached to the front and back surfaces of the insulating layer 21. The thickness of the insulating layer 21 is, for example, 5 μm or more and 100 μm or less, and the thickness of the metal film 22 is, for example, 1 μm or more and 50 μm or less. The thickness of the whole base material 20 is 10 micrometers or more and 200 micrometers or less, for example.
In addition, the thickness of the base material 20 is not limited to the above, For example, 600 micrometers etc. are possible.

Next, as shown in FIG. 4B, a hole 201 penetrating one metal film 22 and the insulating layer 21 is formed. The hole penetrating one metal film 22 may be formed by etching, and then the hole penetrating the insulating layer 21 may be formed by laser.
Next, electroless plating is performed on the metal film 22 and inside the hole 201. Thereby, the substrate PB is obtained.

Thereafter, a mask M covering a part of the metal film 22 is disposed on the substrate PB, and electrolytic plating is performed on the inside of the hole 201 and on the metal film 22 using the processing apparatus 1 (see FIG. 5A). .
First, the electrolytic plating solution TL is supplied from the second tank 14 to the tank 11 through the pipe 16 and the pump P1. The tank 11 is filled with the electrolytic plating solution TL.
Thereafter, the substrate PB is held by the holding unit 13, the substrate PB is placed in the tank 11, and the substrate PB is immersed in the electrolytic plating solution TL. At this time, the substrate PB is disposed in the tank 11 so that the substrate surface of the substrate PB is substantially parallel to the vertical direction. Thereafter, electroplating on the substrate PB is started by energizing between the cathode (not shown) and the anode 12. When performing electrolytic plating, the electrolytic plating solution TL is supplied from the second tank 14 to the tank 11 as needed. As a result, the electrolytic plating solution TL in the tank 11 flows from the upper side in the vertical direction toward the lower side in the vertical direction (see arrow Y1). The electrolytic plating solution TL flowing from the upper side in the vertical direction toward the lower side in the vertical direction flows along the pair of substrate surfaces of the substrate PB, and is also supplied into the holes 201.
Further, during the electrolytic plating, the entire substrate PB is immersed in the electrolytic plating solution TL.

Furthermore, when performing electroplating, the electrolytic plating solution TL is supplied from the second tank 14 to the tank 11 at any time, and the supply amount of the electrolytic plating solution TL from the second tank 14 to the tank 11 is discharged from the tank 11. More than the amount of electrolytic plating solution TL applied. Therefore, the electrolytic plating solution TL overflows from the upper part of the tank 11. The overflowed electrolytic plating solution TL flows in the direction of the arrow Y2 and is collected in the second tank 14.
Further, the electrolytic plating solution TL is supplied to the second tank 14 from the discharge port 112 of the tank 11.
The electrolytic plating solution TL in the second tank 14 is supplied again to the tank 11 via the pipe 16 and the pump P1.
If necessary, the metal concentration or the like of the electrolytic plating solution TL in the second tank 14 may be analyzed to adjust the metal concentration or the like of the electrolytic plating solution TL in the second tank 14.

By the electrolytic plating process as described above, as shown in FIG. 5A, the conductor 26 serving as a via is formed in the hole 201 and the metal film by electrolytic plating is formed on the metal film 22. (The metal film 23 indicates a metal film 22 and a plating film on the metal film 22).

Next, the substrate PB that has been subjected to electrolytic plating is taken out of the tank 11 and cleaned.
Thereafter, the portion of the metal film 22 on which the mask M has been formed is removed by flash etching, and a first circuit layer 25 and a second circuit layer 24 are formed as shown in FIG.
Through the above steps, the flexible circuit board PB7 obtained by subjecting the substrate PB to electrolytic plating can be obtained.

Next, the effect of this embodiment is demonstrated.
In the present embodiment, the substrate surface of the substrate PB is moved from the upper side in the vertical direction toward the lower side while the substrate PB is immersed in the electrolytic plating solution TL in the bath 11. It is flowing along.
As a result, the electrolytic plating solution TL is prevented from staying near the surface of the substrate PB, and the fresh electrolytic plating solution TL always comes into contact with the substrate PB. Thereby, a desired plating film can be stably formed on the substrate PB.

In the present embodiment, the electrolytic plating solution TL in the tank 11 flows from the upper side in the vertical direction toward the lower side. Since the electroplating solution TL flows according to gravity, the electroplating solution TL can flow smoothly. Moreover, the flow of the electrolytic plating solution TL is stabilized by flowing the electrolytic plating solution TL according to gravity.
Furthermore, by flowing the electrolytic plating solution TL from the upper side in the vertical direction toward the lower side according to gravity, it is possible to suppress complication of the apparatus configuration of the processing apparatus 1. Even when the pump P2 for discharging the electrolytic plating solution TL from the tank 11 as shown in FIG. 2 is used, the electrolytic plating from the tank 11 can be performed without using the pump P2 as a pump having a relatively large suction force. The liquid TL can be discharged.

Furthermore, in the present embodiment, the electrolytic plating solution TL in the tank 11 is immersed in the electrolytic plating solution TL in the tank 11 from the upper side in the vertical direction toward the lower side. It flows along the substrate surface and is discharged.
Thereby, even if foreign matter is mixed in the electrolytic plating solution TL, the foreign matter can be discharged from the tank 11. Therefore, it can suppress that a foreign material adheres to the board | substrate PB.

In the present embodiment, the substrate PB is a substrate for a flexible circuit board, and the thickness thereof is relatively thin, 10 to 200 μm.
When such a substrate PB is immersed in the electroplating L, the substrate PB will fluctuate in the electroplating solution TL. Therefore, it may be difficult to perform desired electrolytic plating on the substrate PB when the substrate PB approaches or separates from the anode.
On the other hand, in this embodiment, the electrolytic plating solution TL is allowed to flow while the substrate PB is immersed in the electrolytic plating solution TL. Since the electrolytic plating solution TL flows from the upper side in the vertical direction toward the lower side on the one substrate surface side and the other substrate surface side of the substrate PB, the substrate PB is prevented from fluctuating in the electrolytic plating solution TL. The Thereby, desired electroplating can be performed with respect to the board | substrate PB. Moreover, since the wobbling of the substrate PB can be prevented, it is possible to prevent the substrate PB from being wrinkled or damaged.

Furthermore, in this embodiment, electrolytic plating is performed by overflowing the electrolytic plating solution TL from the tank 11. By making it overflow, electrolytic plating can be applied to the substrate PB while reliably maintaining the state in which the substrate PB is immersed in the electrolytic plating solution TL.

Further, in the present embodiment, one substrate PB is disposed in the tank 11 and electrolytic plating is performed. Therefore, the tank 11 may have a size that allows the substrate PB to be disposed and allows the electrolytic plating solution TL to flow on the substrate surface side of the substrate PB. Thereby, the enlargement of the processing apparatus 1 can be suppressed.

It should be noted that the present invention is not limited to the above-described embodiments, and modifications, improvements, and the like within the scope that can achieve the object of the present invention are included in the present invention.
For example, in the above embodiment, the substrate processing apparatus of the present invention is the electroplating apparatus 1, but is not limited thereto. As shown in FIG. 6, the anode of the processing apparatus 1 may be removed, and the substrate processing apparatus of the present invention may be an electroless plating apparatus 1A.
The processing apparatus 1A shown in FIG. 6 is the same as the processing apparatus 1 except that the anode is removed from the processing apparatus 1. The second tank 14 and the tank 11 are filled with an electroless plating solution TL.
Further, the processing apparatus 1A shown in FIG. 6 may be an etching apparatus for etching a metal layer or the like on the substrate surface. Furthermore, the processing apparatus 1A may be a developing device. The photosensitive resin layer on the substrate surface is irradiated with light, and a developing solution for removing unexposed portions is filled into the second tank 14 and the tank 11, and the photosensitive resin layer on the substrate surface is uncoated by the processing apparatus 1A. The exposed part may be removed.
Furthermore, the processing apparatus 1A may be a peeling apparatus that peels off a mask or the like formed on the substrate. In this case, what is necessary is just to fill the 2nd tank 14 and the tank 11 with the peeling liquid for peeling a mask etc.

Further, as shown in FIG. 7, the substrate processing apparatus of the present invention may be a water washing apparatus 1B. The water washing apparatus 1B has the same configuration as the processing apparatus 1 except that the anode of the processing apparatus 1 is removed and tanks 14A to 14C are provided.
The second tank 14A of the water washing apparatus 1B is filled with water before substrate cleaning.
Water is supplied from the second tank 14A to the tank 11, and the water flows in the tank 11 from the upper side to the lower side in the vertical direction, and the substrate PB is cleaned.
Thereafter, the washed water is discharged from the discharge port 112 and supplied to the third tank 14B.
The water in the third tank 14B is supplied to the fourth tank (purification tank) 14C, and the water is purified in the fourth tank 14C to remove impurities such as metals. The water cleaned in the fourth tank 14C is supplied to the second tank 14A. The water supplied to the second tank 14A will be supplied to the tank 11 again.
In such a water washing apparatus 1B, clean water always comes into contact with the substrate PB, and the substrate PB can be prevented from being contaminated.
Furthermore, in the method of simply immersing the substrate in the water tank and washing with water, it is difficult to reliably wash with one water tank, and it is necessary to provide a plurality of water tanks and perform water washing in multiple stages.
On the other hand, if the water washing apparatus 1B is used, clean water always comes into contact with the substrate PB, so there is no need to perform water washing in multiple stages, and the processing process of the substrate PB can be simplified.
In the washing apparatus 1B, the water in the third tank 14B may be discarded without being purified in the fourth tank 14C.
Further, in the

processing apparatuses

1A and 1B, the piping 17 and the pump P2 may be connected to the discharge port 112 as in FIG.

Further, as shown in FIG. 8, the opening of the tank 11 of the processing apparatus 1 A is closed with a lid 18 (pressurizing means), and the liquid in the tank 11 is pressurized from above and discharged from the discharge port. The flow rate of the substrate processing solution TL may be adjusted. In this case, the substrate PB is held by the holding unit 13B.
Similarly, in the processing apparatus 1 B and the processing apparatus 1, the opening of the tank 11 is closed with a lid member, and the substrate processing solution in the tank 11 is pressurized from above to apply the substrate processing solution discharged from the discharge port. The flow rate may be adjusted.
Also in this case, the piping 17 and the pump P2 may be connected to the discharge port 112 as in FIG.

Further, as shown in FIG. 9, vibration (when the substrate processing solution TL flows along the substrate surface from the upper side of the substrate to the lower side) during the processing of the substrate PB on the substrate PB in the processing apparatus 1 A ( Ultrasonic vibration) may be added. Reference numeral 19 denotes an ultrasonic vibration generator, and an arrow Y3 means an ultrasonic wave from the ultrasonic vibration generator.
By doing so, bubbles attached to the substrate PB can be removed. Also in this case, the piping 17 and the pump P2 may be connected to the discharge port 112 as in FIG.
Note that the ultrasonic vibration generator 19 may also be provided in the

processing apparatuses

1 and 1B.

Furthermore, in the said embodiment, although one board | substrate PB was arrange | positioned in the tank 11 of the processing apparatus 1, and it electroplated with respect to a pair of board | substrate surface of the board | substrate PB, it is not restricted to this.
For example, as shown in FIG. 10, the substrates PB may be disposed on the front and back surfaces of the plate-shaped holding portion 13 A, respectively, and electrolytic plating may be performed on one substrate surface of each of the pair of substrates PB. In the

processing apparatuses

1A, 1B, etc., the holding unit 13A may be used instead of the holding unit 13, and one of the substrate surfaces of the pair of substrates PB may be subjected to electrolytic plating.

Moreover, in the said embodiment, although electroplating was performed also in the hole 201 of the board | substrate PB, you may electroplate on the board | substrate surface in which the hole 201 is not formed. The same applies to the

processing apparatuses

1A and 1B, and the surface of the substrate on which the hole 201 is not formed may be processed.
Furthermore, in the said embodiment, although the board | substrate PB was used as the board | substrate for flexible circuit boards, it is not restricted to this, You may use the board | substrate for rigid circuit boards.
Moreover, in the said embodiment, although the board | substrate PB was arrange | positioned in the tank so that the board | substrate surface of the board | substrate PB might become parallel to a perpendicular direction, it is not restricted to this, For example, as shown in FIG. The substrate PB may be arranged so that the substrate surface of the substrate is inclined with respect to the vertical direction. Even when the substrate PB is disposed in an inclined manner as described above, the same effects as those of the embodiment can be obtained.

Next, a second embodiment of the present invention will be described with reference to the drawings.
First, the outline of the substrate processing apparatus 2 of the present embodiment will be described with reference to FIG.
The substrate processing apparatus 2 includes a substrate processing solution TL in the through hole 201 of the substrate PB in which a through hole 201 (see FIG. 15) penetrating from one substrate surface side to the other substrate surface side of the substrate PB is formed. To process the substrate PB.
The substrate processing apparatus 2 includes a tank 21 in which the substrate processing solution TL is supplied and the substrate PB is immersed in the supplied substrate processing solution TL. In the tank 21, the substrate PB is held so that a pair of substrate surfaces of the substrate PB is substantially parallel to the vertical direction, and the tank 21 is held in the first tank 211 and the second tank 212 together with the held substrate PB. Partition walls 213 are formed.
The first supply port 211A of the substrate processing solution in the first tank 211 and the second supply port 212A of the substrate processing solution in the second tank 212 are vertically above the substrate PB held by the partition wall 213, The first discharge port 211B of the substrate processing solution in the first tank 211 and the second discharge port 212B of the substrate processing solution in the second tank 212 are below the substrate PB held by the partition wall 213 in the vertical direction.
The substrate substrate processing apparatus 2 allows the substrate processing solution TL to flow from the first supply port 211A toward the first discharge port 211B, and the substrate processing solution from the second supply port 212A toward the second discharge port 212B. When the TL is flowed, the substrate processing solution TL is configured to flow along one substrate surface and the other substrate surface of the substrate PB from the upper side to the lower side in the vertical direction. Adjusting means for differentiating the average flow velocity (average linear velocity) of the substrate treatment solution TL flowing along the substrate surface and the average flow velocity (average linear velocity) of the substrate treatment solution TL flowing along the other substrate surface of the substrate PB; Have.

Next, the substrate processing apparatus 2 will be described in detail.
The substrate processing solution TL is a chemical solution, in this embodiment, an electrolytic plating solution TL. That is, the substrate processing apparatus 2 is an electrolytic plating apparatus in the present embodiment.
The tank 21 is, for example, a hard PVC tank, and in the present embodiment, has a rectangular parallelepiped shape or a cubic shape.
The tank 21 includes a partition wall 213. For example, the partition wall 213 is erected on the bottom surface of the tank 21 and holds the substrate PB so that the pair of substrate surfaces of the substrate PB is substantially parallel to the vertical direction. The partition wall 213 partitions the tank 21 into the first tank 211 and the second tank 212 together with the held substrate PB.
Here, the partition 213 is shown in FIG. 13 and FIG. 13 is a view as seen from the x-axis direction of FIG. 12, and FIG. 14 is an exploded view of the partition 213.
In the present embodiment, the partition wall 213 includes a pair of plate members 213A. An opening 213A1 is formed at the center of the plate material 213A, and the substrate PB is arranged so as to close the opening 213A1 of the one plate material 213A. Then, the other plate material 213A is overlapped, and the peripheral portion of the substrate PB is sandwiched between the plate materials 213A. As a result, the substrate PB is held on the partition wall 213.
A recess (not shown) for fitting the partition wall 213 is formed on the bottom surface of the tank 21.

As shown in FIG. 12, a first supply port 211 A for the electrolytic plating solution TL is formed on the side wall of the tank 21. The electrolytic plating solution TL is supplied into the first tank 211 from the first supply port 211A. The first supply port 211A is located above the substrate PB held by the partition wall 213 in the vertical direction. The electrolytic plating solution TL in the first tank 211 flows along the substrate surface of the substrate PB and is discharged from the first discharge port 211B.
The first discharge port 211 B is formed on the bottom surface of the tank 21, and is positioned below the substrate PB held by the partition wall 213 in the vertical direction.
Here, the first outlet 211B may be a single through hole or a plurality of holes.

A second supply port 212 A for the electrolytic plating solution TL is formed on the side wall of the tank 21. The electrolytic plating solution TL is supplied into the second tank 212 from the second supply port 212A. The second supply port 212A is located above the substrate PB held by the partition wall 213 in the vertical direction. The electrolytic plating solution TL in the first tank 211 flows along the substrate surface of the substrate PB and is discharged from the second discharge port 212B.
The second discharge port 212 B is formed on the bottom surface of the tank 21, and is positioned below the substrate PB held by the partition wall 213 in the vertical direction.
Here, the second discharge port 212B may be a single through hole, or a plurality of second discharge ports may be provided.
In this embodiment, the 1st discharge port 211B is comprised by one through-hole, and the 2nd discharge port 212B is comprised by one through-hole. The opening diameter of the first discharge port 211B is larger than the opening diameter of the second discharge port 212B.

In this embodiment, the

discharge ports

211B and 212B and the tank 24 are not connected by piping, and the electrolytic plating solution TL discharged from the

discharge ports

211B and 212B naturally falls into the tank 24.

Further, a plurality of anodes 22 are installed in the tank 21. In the present embodiment, two anodes 22 are installed. One anode 22 is disposed so as to face one substrate surface of the substrate PB disposed in the tank 21, and the other anode 22 is opposed to the other substrate surface of the substrate PB disposed in the tank 21. Are arranged to be. The anode 22 is, for example, phosphorous copper.

The substrate processing apparatus 2 includes a tank (adjustment tank) 14 filled with an electrolytic plating solution TL to be supplied to the tank 21. Since the tank 24 also serves to receive the electrolytic plating solution TL that has overflowed from the tank 21, the tank 24 is disposed on the lower side in the vertical direction of the tank 21.
Here, a bubbling device (not shown) may be connected to the tank 24 in order to stir the electrolytic plating solution TL in the tank 24. By doing in this way, the density | concentration of the electroplating liquid TL in the tank 24 can be made uniform.
The tank 24 and the first supply port 211 A of the tank 21 are connected by a pipe 26. The electrolytic plating solution TL is supplied from the tank 24 to the tank 21 through the pipe 26 and the pump P1 connected to the pipe 26.
The tank 24 and the second supply port 212 A of the tank 21 are connected by a pipe 27. The electrolytic plating solution TL is supplied from the tank 24 to the tank 21 via the pipe 27 and the pump P 2 connected to the pipe 27.

Next, a substrate processing method for the substrate PB using the substrate processing apparatus 2 will be described.
First, a base material 220 as shown in FIG.
The base material 220 includes an insulating layer 221 and a metal film 222 (for example, a copper film) attached to the front and back surfaces of the insulating layer 221. The thickness of the insulating layer 221 is, for example, 5 μm or more and 100 μm or less, and the thickness of the metal film 222 is, for example, 1 μm or more and 50 μm or less. The entire thickness of the base material 220 is, for example, 10 μm or more and 200 μm or less.

Next, as shown in FIG. 15B, a through-hole 201 that penetrates the pair of metal films 222 and the insulating layer 221 is formed. Next, electroless plating is performed on the metal film 222 and inside the through hole 201. Thereby, the substrate PB is obtained.

Thereafter, a mask M covering a part of the metal film 222 is disposed on the substrate PB, and electrolytic plating is performed on the inside of the through hole 201 and on the metal film 222 using the substrate processing apparatus 2 (FIG. 16A). reference).
Electrolytic plating is performed as follows.
First, as shown in FIG. 12, the electrolytic plating solution TL is supplied from the tank 24 to the first tank 211 of the tank 21 through the pipe 26 and the pump P1. Further, the electrolytic plating solution TL is supplied from the tank 24 to the second tank 212 via the pipe 27 and the pump P2, and the inside of the tank 21 is filled with the electrolytic plating solution TL.
The electrolytic plating solution TL continues to be supplied to the bath 21 so that the electrolytic plating solution TL overflows from the bath 21 and the inside of the bath 21 is filled with the electrolytic plating solution TL.
Thereafter, the substrate PB is held by the partition wall 213, the substrate PB is placed in the tank 21, and the substrate PB is immersed in the electrolytic plating solution TL. At this time, the substrate PB is disposed in the tank 21 so that the substrate surface of the substrate PB is substantially in the vertical direction. Thereafter, electroplating on the substrate PB is started by energizing between the cathode (not shown) and the anode 22. When electrolytic plating is performed, the electrolytic plating solution TL is supplied from the tank 24 to the first tank 211 and the second tank 212 as needed. Thereby, the electrolytic plating solution TL in the tank 21 flows from the upper side in the vertical direction toward the lower side in the vertical direction (see arrows Y1 and Y2). The electrolytic plating solution TL that flows from the upper side in the vertical direction toward the lower side in the vertical direction flows along the pair of substrate surfaces of the substrate PB and is also supplied to the inside of the through hole 201.
During the electrolytic plating, the entire substrate PB is immersed in the electrolytic plating solution TL.

Here, in this embodiment, since the opening diameter of the first discharge port 211B is larger than the opening diameter of the second discharge port 212B, electrolysis flowing on one substrate surface (surface on the first tank 211 side) of the substrate PB. The average flow rate of the plating solution TL is faster than the average flow rate of the electrolytic plating solution TL that flows on the other substrate surface (the surface on the second tank 212 side). Therefore, as shown in the enlarged cross-sectional view of FIG. 17, a speed difference between the electrolytic plating solution TL flowing on one substrate surface and the electrolytic plating L flowing on the other substrate surface is generated, so that the flow from the slow side to the fast side The electrolytic plating solution TL is drawn into the through hole 201 toward the top, and electrolytic plating is performed in the through hole 201. As a result, electrolytic plating is performed in the through hole 201. Therefore, the first discharge port 211B and the second discharge port 212B are the adjusting means.

The average flow rate of the electrolytic plating solution TL flowing on the substrate surface of the substrate PB is the flow rate V1 per unit time of the electrolytic plating solution TL discharged from the first discharge port 211B and the electrolytic plating discharged from the second discharge port 212B. It can be calculated from the flow rate V2 per unit time of the liquid TL.
First, the flow rate V1 per unit time of the electrolytic plating solution TL discharged from the first discharge port 211B is measured. Further, the flow rate V2 per unit time of the electrolytic plating solution TL discharged from the second discharge port 212B is measured. In this embodiment, since the shape of the tank 21 is a rectangular parallelepiped or a cube, one substrate of the substrate PB is obtained by dividing V1 by the area S1 surrounded by the substrate PB, the partition wall 213, and the tank 21, as shown in FIG. The average flow rate of the electrolytic plating solution TL flowing through the surface can be calculated.
Similarly, as shown in FIG. 22, the average flow velocity of the electrolytic plating solution TL flowing on the other substrate surface of the substrate PB is calculated by dividing V2 by the area S2 surrounded by the substrate PB, the partition 213, and the tank. Can do.
Moreover, as shown in FIG. 23, the wall surface comprised by the partition 213 and the board | substrate PB may be inclined. In this case, the average flow velocity of the electrolytic plating solution TL flowing on the substrate surface of the substrate PB can be calculated by calculation simulation or the like.
The difference between the average flow rate of the electrolytic plating solution TL flowing on one substrate surface of the substrate PB and the average flow rate of the electrolytic plating solution TL flowing on the other substrate surface of the substrate PB is preferably 1 m / s or more. More preferably, it is 10 m / s or more.
Note that the mask M is omitted in the enlarged sectional view of FIG.
In the drawing of FIG. 22, the anode 22 is omitted, but the average flow velocity may be calculated in consideration of the thickness of the anode 22 and the like.

Furthermore, when performing electroplating, the electrolytic plating solution TL is supplied from the tank 24 to the first tank 211 as needed, and the supply amount of the electrolytic plating solution TL from the tank 24 to the first tank 211 is the first tank 211. More than the amount of electrolytic plating solution TL discharged from Similarly, when electrolytic plating is performed, the electrolytic plating solution TL is supplied from the tank 24 to the second tank 212 as needed, and the supply amount of the electrolytic plating solution TL from the tank 24 to the second tank 212 is the second tank. More than the amount of electrolytic plating solution TL discharged from 212.
Therefore, the electrolytic plating solution TL overflows from the upper part of the first tank 211 and the second tank 212. The overflowed electrolytic plating solution TL flows in the direction of the arrow Y3 and is collected in the tank 24.
Further, the electrolytic plating solution TL is supplied to the tank 24 from the first discharge port 211B and the second discharge port 212B.
The electrolytic plating solution TL in the tank 24 is supplied again to the tank 21 via the

pipes

26 and 27 and the pumps P1 and P2.
If necessary, the metal concentration or the like of the electrolytic plating solution TL in the tank 24 may be analyzed to adjust the metal concentration or the like of the electrolytic plating solution TL in the tank 24.
Further, the amount of electrolytic plating solution TL per unit time supplied from the pipe 26 into the first tank 211 is the same as the amount of electrolytic plating solution TL per unit time supplied from the pipe 27 into the second tank 212. May be different.

By the electrolytic plating process as described above, as shown in FIG. 16A, a conductor 26 serving as a via is formed in the through hole 201, and a metal film by electrolytic plating is formed on the metal film 222. (The metal film 223 is a metal film 222 and a plating film on the metal film 222).

Next, the substrate PB that has been subjected to electrolytic plating is taken out of the bath 21 and cleaned.
Thereafter, the portion of the metal film 222 where the mask M has been formed is removed by flash etching, and a first circuit layer 225 and a second circuit layer 224 are formed as shown in FIG.
Through the above steps, a flexible circuit board PB obtained by subjecting the substrate PB to electrolytic plating can be obtained.

Next, the effect of this embodiment is demonstrated.
The average flow velocity (linear velocity) of the electrolytic plating solution TL flowing on one substrate surface (first tank 211 side) of the substrate PB is the average flow velocity (electrolytic plating solution TL flowing on the other substrate surface (second tank 212 side) ( It is faster than (line speed). Therefore, as shown in the enlarged cross-sectional view of FIG. 17, a speed difference between the electrolytic plating solution TL flowing on one substrate surface and the electrolytic plating L flowing on the other substrate surface is generated, so that the flow from the slow side to the fast side The electrolytic plating solution TL is drawn into the through hole 201 toward the top, and electrolytic plating is performed in the through hole 201. Thereby, electrolytic plating can be reliably performed in the through hole 201, and generation of voids or the like in the plating film in the through hole 201 can be suppressed.
In the present embodiment, the electrolytic plating solution TL in the bath 21 is immersed in the electrolytic plating solution TL in the bath 21 from the upper side in the vertical direction toward the lower side of the substrate PB. It flows along the substrate surface.
As a result, the electrolytic plating solution TL is prevented from staying near the surface of the substrate PB, and the fresh electrolytic plating solution TL always comes into contact with the substrate PB. Thereby, a desired plating film can be stably formed on the substrate PB.

In the present embodiment, the electrolytic plating solution TL in the tank 21 flows from the upper side in the vertical direction toward the lower side. Since the electroplating solution TL flows according to gravity, the electroplating solution TL can flow smoothly. Moreover, the flow of the electrolytic plating solution TL is stabilized by flowing the electrolytic plating solution TL according to gravity.
Further, the electrolytic plating solution TL is flowed according to gravity from the upper side in the vertical direction toward the lower side, so that the apparatus configuration of the substrate processing apparatus 2 can be prevented from becoming complicated.
Furthermore, in the present embodiment, the electrolytic plating solution TL in the tank 21 is immersed in the electrolytic plating solution TL in the tank 21 from the upper side in the vertical direction toward the lower side. It flows along the substrate surface and is discharged.
Thereby, even if foreign matter is mixed in the electrolytic plating solution TL, the foreign matter can be discharged from the tank 21. Therefore, it can suppress that a foreign material adheres to the board | substrate PB.

Furthermore, in this embodiment, electrolytic plating is performed by overflowing the electrolytic plating solution TL from the tank 21. By making it overflow, electrolytic plating can be applied to the substrate PB while reliably maintaining the state in which the substrate PB is immersed in the electrolytic plating solution TL.

Further, in the present embodiment, one substrate PB is disposed in the tank 21 and electrolytic plating is performed. Therefore, the tank 21 may have a size that allows the substrate PB to be disposed and allows the electrolytic plating solution TL to flow on the substrate surface side of the substrate PB. Thereby, the enlargement of the substrate processing apparatus 2 can be suppressed.

It should be noted that the present invention is not limited to the above-described embodiments, and modifications, improvements, and the like within the scope that can achieve the object of the present invention are included in the present invention.
For example, in the above embodiment, the electrolytic plating solution TL that flows on one substrate surface (the first tank 211 side) of the substrate PB is set so that the opening diameter of the first discharge port 211B is larger than the opening diameter of the second discharge port 212B. The average flow velocity (linear velocity) is made faster than the average flow velocity (linear velocity) of the electrolytic plating solution TL flowing on the other substrate surface (second tank 212 side), but is not limited thereto.
For example, as shown in FIG. 18, the pipe 28 is connected to the first outlet 211B, and the electrolytic plating solution is sucked by the pump P3. Similarly, the pipe 29 is connected to the second discharge port 212B, and the electrolytic plating solution is sucked by the pump P4. By making the suction force of the pump P3 larger than the suction force of the pump P4, the average flow velocity (linear velocity) of the electrolytic plating solution TL flowing on one substrate surface (first tank 211 side) of the substrate PB is set to the other substrate. You may make it faster than the average flow velocity (linear velocity) of the electroplating liquid TL which flows through the surface (the 2nd tank 212 side). In this case, the first discharge port 211B may be larger than the second discharge port 212B, but the first discharge port 211B may have the same size as the second discharge port 212B. .

Further, as shown in FIG. 19, the first pressurizing means 231 for pressurizing the electrolytic plating solution in the first tank from the upper side to the lower side and discharging it from the first discharge port, and the electrolytic plating in the second tank. A second pressurizing unit 232 configured to pressurize the liquid from the upper side to the lower side and discharge the liquid from the first discharge port. The pressure applied to the electrolytic plating solution from the first pressurizing unit 231 is set to the second pressurizing unit 232. The average flow velocity (linear velocity) of the electrolytic plating solution TL flowing on the one substrate surface (first tank 211 side) of the substrate PB is increased by the pressure applied to the electrolytic plating solution from the other substrate surface (second tank). 212 side) may be faster than the average flow velocity (linear velocity) of the electrolytic plating solution TL. In this case, the first discharge port 211B may be larger than the second discharge port 212B, but the first discharge port 211B may have the same size as the second discharge port 212B. .
Furthermore, both pumps P3 and P4 and pressurizing means 231 and 232 may be provided.

In the embodiment, the electroplating apparatus 2 is used. However, the present invention is not limited to this. As shown in FIG. 20, the anode of the substrate processing apparatus 2 may be removed, and the substrate processing apparatus of the present invention may be an electroless plating apparatus 2A.
The substrate processing apparatus 2A shown in FIG. 20 is the same as the substrate processing apparatus 2 except that the anode is removed from the substrate processing apparatus 2. The tank 24 and the tank 21 are filled with an electroless plating solution TL.
Alternatively, the substrate processing apparatus 2A shown in FIG. 20 may be an etching apparatus that etches a metal layer or the like on the substrate surface. Further, the substrate processing apparatus 2A may be a developing device. The photosensitive resin layer on the substrate surface is irradiated with light, and a developer for removing unexposed portions is filled into the tank 24 and the tank 21, and the photosensitive resin layer on the substrate surface is unexposed by the substrate processing apparatus 2 A. The portion may be removed.
Furthermore, the substrate processing apparatus 2 A may be a peeling apparatus that peels off a mask or the like formed on the substrate. In this case, the tank 24 and the tank 21 may be filled with a stripping solution for stripping the mask or the like.

Further, as shown in FIG. 21, the substrate processing apparatus of the present invention may be a water washing apparatus 2B. The water washing apparatus 2B has the same configuration as the substrate processing apparatus 2 except that the anode of the substrate processing apparatus 2 is removed and tanks 24A to 14C are provided.
The tank 24A of the water washing apparatus 2B is filled with water before substrate cleaning.
Water is supplied from the tank 24A to the tank 21, and the water flows in the tank 21 from the upper side to the lower side in the vertical direction, and the substrate PB is cleaned.
Thereafter, the washed water is discharged from the discharge port 212 and supplied to the tank 24B.
The water in the tank 24B is supplied to the tank (septic tank) 14C, and the water is purified in the tank 24C to remove impurities such as metals. The water cleaned in the tank 24C is supplied to the tank 24A. The water supplied to the tank 24A will be supplied to the tank 21 again.
In such a water washing apparatus 2B, clean water always comes into contact with the substrate PB, and the substrate PB can be prevented from being contaminated. Further, the inside of the through hole 201 can be reliably cleaned.
Furthermore, in the method of simply immersing the substrate in the water tank and washing with water, it is difficult to reliably wash with one water tank, and it is necessary to provide a plurality of water tanks and perform water washing in multiple stages.
On the other hand, if the water washing apparatus 2B is used, clean water always comes into contact with the substrate PB, so there is no need to perform water washing in multiple stages, and the processing process of the substrate PB can be simplified.
In the washing apparatus 2B, the water in the tank 24B may be discarded without being cleaned in the tank 24C.

Furthermore, in the said embodiment, although it arrange | positioned so that the board | substrate surface of the board | substrate PB might become parallel to a perpendicular direction in the tank 21, it is not restricted to this, As shown in FIG. May be arranged so that is perpendicular to the vertical direction.

Next, a third embodiment of the present invention will be described below with reference to the drawings. In this embodiment, as shown in the drawing, the front / rear / left / right directions are defined in addition to the up / down direction. However, this is provided for the sake of convenience in order to briefly explain the relative relationship between the components. Therefore, the direction at the time of manufacture and use of the product which implements the present invention is not limited.

In the substrate processing apparatus 300 of the present embodiment, as shown in FIG. 25, an opening 311 through which the substrate processing region TS of one surface OF of the substrate PB is exposed is formed on one surface, and an insertion port 312 is formed on the upper surface. A box-shaped substrate holding member 310, and a balloon member 321 that is an expandable / contractible member that is arranged inside the other surface of the substrate holding member 310 and presses the inserted substrate PB against the inner peripheral surface of the opening 311. Have.

The balloon member 321 is made of, for example, a silicon tube having a diameter of 10 mm and a thickness of 1 mm. The balloon member 321 presses the substrate PB by expansion, and is contracted by a negative pressure when the substrate PB is inserted.

For this reason, the balloon member 321 is required to expand and contract. However, although the balloon member 321 which consists of a syringe tube is illustrated here as an expansion / contraction member, a bellows and an air cylinder can also be utilized as such an expansion / contraction member (not shown).

The substrate PB is processed by the substrate processing solution TL only on the substrate processing region TS of one surface OF. For example, bump plating (an electrically conductive layer with a via in the insulating layer and a face on the bottom) Starting from the bottom of the via with electrolytic copper / Ni / solder plating) and electroless gold plating (land with solder balls). The substrate PB is formed in, for example, 500 × 500 mm.

Furthermore, the substrate processing apparatus 300 of the present embodiment includes a solution holding container 330 that contains the substrate processing solution TL in the substrate processing region TS and into which the substrate holding member 310 on which the substrate PB is set, and the substrate PB. It further has a substrate support jig 322 supported on the other surface.

For the substrate processing solution TL, for example, copper sulfate / Ni / solder is used in the case of bump plating as described above, and cyan gold is used in the case of electrolytic plating. These chemical solutions cause problems such as unnecessary corrosion and dissolution, and useless plating film just by contacting the parts that you do not want to treat.

The substrate holding member 310 and the solution holding container 330 are made of engineering plastics such as PVC (polyvinyl chloride) because they need chemical resistance and rigidity.

More specifically, the substrate holding member 310 is formed with a rectangular opening 311 corresponding to the substrate processing region TS of the substrate PB on the front surface, and as shown in FIG. A balloon member 321 is disposed.

For example, an air pump is connected to the balloon member 321 with a flexible tube member (not shown) and is expanded by a positive pressure. The positive pressure may be maintained by an air pump or may be maintained by closing the tube member.

As shown in FIGS. 26 and 28, a sealing material 323 that is in close contact with the substrate PB is attached to the outer periphery of the inner surface of the opening hole 311 of the substrate holding member 310. Since the sealing material 323 requires chemical resistance, it is made of rubber sponge such as EPDM (Ethylene-Propylene-Methylene Linkage) or FKM (Fluorocarbon rubber).

The sealing material 323 needs discontinuous pores because the substrate processing solution TL leaks out in the continuous pores. Also, flexibility is required to seal by pressing. For this reason, since it is not crushed with a rubber sheet, it is difficult to use it as a seal.

In order to seal firmly, the wrap width needs to be at least 5 mm or more on the outer periphery of the substrate. The larger the wrap width, the higher the reliability of the seal, but the smaller the substrate processing effective area, the smaller the ideal.

The substrate support jig 322 is made of a plate material that simply supports the substrate PB, and does not seal the other surface of the substrate PB. However, the strength which does not break even if pressed by the balloon member 321 is required.

The substrate processing method of the substrate PB by the substrate processing apparatus 300 of the present embodiment in the configuration as described above will be described below. First, as shown in FIG. 28A, the substrate PB is mounted on the substrate support jig 322 with the one surface OF of the substrate processing region TS as the front.

Next, as shown in FIG. 28 (b), the substrate PB is inserted into the substrate holding member 310 from the insertion port 312 together with the substrate support jig 322. At this time, since the balloon member 321 is reduced, the insertion of the substrate PB is smoothly executed.

Next, as shown in FIG. 28C, the balloon member 321 is expanded, whereby the substrate PB is brought into close contact with the sealing material 323 of the substrate holding member 310. At this time, the substrate processing region TS is positioned in the opening hole 311 of the substrate holding member 310.

Then, the substrate holding member 310 on which the substrate PB is set as described above is immersed in the solution holding container 330 containing the substrate processing solution TL as shown in FIG. Then, only the substrate processing region TS of the substrate PB is processed with the substrate processing solution TL from the opening 311 of the substrate holding member 310. When this processing is completed, the substrate PB processed only in the substrate processing region TS can be obtained by executing the above-described operation in reverse.

In the substrate processing apparatus 300 according to the present embodiment, the substrate holding member 310 on which the substrate PB is set as described above is immersed in the substrate processing solution TL in the substrate processing region TS accommodated in the solution holding container 330. The substrate processing solution TL can be supplied only to the substrate processing region TS of the substrate PB. For this reason, only the substrate processing region TS of the one surface OF of the substrate PB can be easily and quickly processed with the substrate processing solution TL.

The present invention is not limited to the present embodiment, and various modifications are allowed without departing from the scope of the present invention. For example, in the above embodiment, only the substrate holding member 310 on which the substrate PB is set is immersed in the solution holding container 330 containing the substrate processing solution TL.

However, in this state, the substrate processing solution TL may be sequentially supplied to the solution holding container 330 by the solution supply mechanism 341 as shown in FIG. Such a solution supply mechanism 341 can drop the substrate processing solution TL from above to below. Thus, the flow rate of the substrate processing solution TL falling from the upper side to the lower side is, for example, about 0.1 to 2 m / s.

Furthermore, as shown in FIG. 29, the substrate processing solution TL falling from above to below as described above may be pumped to the substrate processing region TS by the solution turbulence mechanism 342. In this case, the substrate processing solution TL flowing downward from above is turbulent by the substrate processing solution TL supplied from the nozzle 143 and is pumped to the substrate processing region TS of the substrate PB. The region TS can be processed satisfactorily.

Further, as shown in FIG. 30, the substrate processing solution TL may be pumped to the substrate processing region TS by the solution turbulence mechanism 351 and sucked. In this case, since the turbulent substrate processing solution TL is supplied to the substrate processing region TS of the substrate PB, the substrate processing region TS can be satisfactorily processed with the substrate processing solution TL.

In the

solution turbulence mechanism

342, 351 as described above, the horizontally long slit-shaped nozzles 143, 152, 153 may be arranged in the vertical direction. For example, circular nozzles having an inner diameter of 1 to 5 mm are arranged at intervals of 1 to They may be formed in a matrix shape or zigzag shape at 20 mm (not shown).

Furthermore, in the above embodiment, the rectangular opening hole 311 corresponding to the substrate processing region TS is formed in the substrate holding member 310, and the rectangular annular balloon member 321 is disposed behind the rectangular opening hole 311.

However, the balloon member 321 only needs to be able to press-contact the substrate PB to the opening hole 311 of the substrate holding member 310 and, for example, one large expansion member, two upper and lower expansion members, two left and right members The expansion / contraction member may be used (not shown).

Of course, the embodiment and the plurality of modifications described above can be combined within a range in which the contents do not conflict with each other. Further, in the above-described embodiments and modifications, the structure of each part has been specifically described, but the structure and the like can be changed in various ways within a range that satisfies the present invention.

A fourth embodiment of the present invention will be described below with reference to the drawings. In this embodiment, as shown in the figure, the front / rear and left / right directions are defined in addition to the up / down direction. However, this is provided for the sake of convenience in order to briefly explain the relative relationship between the components. Therefore, the direction at the time of manufacture and use of the product which implements the present invention is not limited.

As shown in FIG. 31, the substrate processing apparatus 400 of the present invention contains a substrate processing solution TL and a substrate holding solution 430 in which the substrate PB is immersed, and the substrate processing solution TL in the solution holding container 430 from below. And a solution supply mechanism 441 that sequentially drops and supplies the substrate processing solution TL that drops downward from above to a substrate processing region TS on one surface of the substrate PB.

The substrate holding member 410 and the solution holding container 430 are made of engineering plastics such as PVC (polyvinyl chloride) because they need chemical resistance and rigidity.

Further, as shown in FIGS. 31 to 34, the substrate processing apparatus 400 of the present embodiment has an insertion hole 412 into which the substrate PB is inserted, and an opening hole 411 through which the substrate processing region TS is exposed. Is a box-shaped substrate holding member 410 formed on one surface, and an expandable / contractible member that is disposed inside the other surface of the substrate holding member 410 and presses the inserted substrate PB against the inner peripheral surface of the opening hole 411. A balloon member 421 and a substrate support jig 422 for supporting the substrate PB on the other surface are also provided.

The balloon member 421 is made of a silicon tube having a diameter of 10 mm and a thickness of 1 mm, for example. The balloon member 421 presses the substrate PB by expansion, and is contracted by negative pressure when the substrate PB is inserted.

For this reason, the balloon member 421 is required to expand and contract. However, although the balloon member 421 which consists of a syringe tube is illustrated here as an expansion / contraction member, a bellows and an air cylinder can also be utilized as such an expansion / contraction member (not shown).

More specifically, as shown in FIG. 32, the solution holding container 430 is formed in a box shape having an open top surface, and a solution supply mechanism 441 is disposed at the front upper portion thereof. A solution discharge port 444 for the substrate processing solution TL is formed below the solution holding container 430, and the substrate processing solution TL is discharged from the solution discharge port 444 by gravity. Thus, the flow rate of the substrate processing solution TL falling from the upper side to the lower side is, for example, about 0.1 to 2 m / s.

As shown in FIGS. 31 and 32, the solution turbulence mechanism 442 includes a plurality of solution discharge ports 443 that are flat in the horizontal direction, and the substrate processing solution TL is supplied to the substrate on one surface of the substrate PB from the plurality of solution discharge ports 443. Pump to processing area TS.

Further, the substrate holding member 410 is formed with a rectangular opening hole 411 corresponding to the substrate processing region TS of the substrate PB in FIG. 32 and the front surface, and as shown in FIG. A member 421 is disposed.

For example, an air pump is connected to the balloon member 421 with a flexible tube member (not shown) and is expanded by a positive pressure. The positive pressure may be maintained by an air pump or may be maintained by closing the tube member.

As shown in FIGS. 32 and 34, a sealing material 423 that is in close contact with the substrate PB is attached to the outer periphery of the inner surface of the opening hole 411 of the substrate holding member 410. Since the sealing material 423 requires chemical resistance, it is made of, for example, a rubber sponge such as EPDM or FKM.

The sealing material 423 needs discontinuous pores because the substrate processing solution TL leaks out in the continuous pores. Also, flexibility is required to seal by pressing. For this reason, since it is not crushed with a rubber sheet, it is difficult to use it as a seal.

The substrate support jig 422 is made of a plate material that simply supports the substrate PB, and does not seal the other surface of the substrate PB. However, the strength which does not break even if pressed by the balloon member 421 is required.

The substrate PB processing method by the substrate processing apparatus 400 of the present embodiment in the configuration as described above will be described below. First, as shown in FIG. 34A, the substrate PB is mounted on the substrate support jig 422 with the one surface OF of the substrate processing region TS as the front.

Next, as shown in FIG. 34B, the substrate PB is inserted into the substrate holding member 410 from the insertion port 412 together with the substrate support jig 422. At this time, since the balloon member 421 is reduced, the insertion of the substrate PB is performed smoothly.

Next, as shown in FIG. 34C, the balloon member 421 is expanded, whereby the substrate PB is brought into close contact with the sealing material 423 of the substrate holding member 410. At this time, the substrate processing region TS is positioned in the opening hole 411 of the substrate holding member 410.

Then, the substrate holding member 410 on which the substrate PB is set as described above is immersed in the solution holding container 430 containing the substrate processing solution TL as shown in FIGS.

Then, only the substrate processing region TS of the substrate PB is processed with the substrate processing solution TL from the opening hole 411 of the substrate holding member 410. In such a state, the substrate processing solution TL is supplied from the solution supply mechanism 441 to the solution holding container 430, and the substrate processing solution TL falls downward from above and is sequentially discharged from the solution discharge port 444.

At this time, the substrate processing solution TL is simultaneously pumped from the plurality of solution discharge ports 443 of the solution turbulence mechanism 442 to the substrate processing region TS of the substrate PB. For this reason, the substrate processing solution TL in which the substrate processing solution TL flows on the surface of the substrate PB from the upper side to the lower side becomes a turbulent flow due to the substrate processing solution TL discharged from the plurality of solution discharge ports 443, so that the substrate processing solution TL is It is pumped to the substrate processing region TS of the substrate PB.

When the processing of the substrate processing region TS of the substrate PB as described above is completed, the substrate PB processed only in the substrate processing region TS can be obtained by executing the above operations in reverse.

In the substrate processing apparatus 400 of the present embodiment, the solution supply mechanism 441 sequentially drops the substrate processing solution TL from the upper side to the lower side in the solution holding container 430 in which the substrate PB is immersed as described above. In this way, the solution turbulence mechanism 442 pumps the substrate processing solution TL falling from the upper side to the lower side to the substrate processing region TS on one surface of the substrate PB.

For this reason, the substrate processing solution TS on one surface of the substrate PB is not only simply dropped from the upper side to the lower side, but is also pumped as a turbulent flow. Therefore, the substrate processing region TS on one surface of the substrate PB is quickly and satisfactorily processed by the turbulent substrate processing solution TL.

In particular, since the solution turbulence mechanism 442 discharges the substrate processing solution TL from the plurality of solution discharge ports 443, the substrate processing solution TL in which the substrate processing solution TL flows on the surface of the substrate PB from the upper side to the lower side becomes a good turbulent flow. The process is performed quickly and successfully.

Moreover, in the substrate processing apparatus 400 of the present embodiment, the substrate holding member 410 on which the substrate PB is set as described above is immersed in the substrate processing solution TL in the substrate processing region TS accommodated in the solution holding container 430. Thus, the substrate processing solution TL can be supplied only to the substrate processing region TS of the substrate PB. For this reason, only the substrate processing region TS of the one surface OF of the substrate PB can be easily and quickly processed with the substrate processing solution TL.

The present invention is not limited to the present embodiment, and various modifications are allowed without departing from the scope of the present invention. For example, in the above embodiment, it is assumed that the substrate PB immersed in the substrate processing solution TL in the solution holding container 430 is kept stationary.

However, a substrate swing mechanism (not shown) that swings the substrate PB immersed in the substrate processing solution TL in the solution holding container 430 in the vertical direction may be provided. In this case, it is possible to reduce unevenness in the pumping of the substrate processing solution TL due to the separation of the plurality of solution discharge ports 443 by swinging.

Further, in the above embodiment, a rectangular opening hole 411 corresponding to the substrate processing region TS is formed in the substrate holding member 410, and a rectangular annular balloon member 421 is disposed behind the rectangular opening hole 411.

However, the balloon member 421 only needs to be able to press-contact the substrate PB to the opening hole 411 of the substrate holding member 410 and, for example, one large balloon member, two upper and lower balloon members, two left and right Or a balloon member (not shown).

In the above embodiment, the substrate PB is set on the box-shaped substrate holding member 410 and only one substrate processing region TS is processed with the substrate processing solution TL. However, the other surface of the substrate PB may be sealed and attached to the substrate support jig 422, and the substrate processing region TS may be processed by immersing the substrate PB together with the substrate support jig 422 in the substrate processing solution TL. .

A fifth embodiment of the present invention will be described below with reference to the drawings. In this embodiment, as shown in the figure, the front / rear and left / right directions are defined in addition to the up / down direction. However, this is provided for the sake of convenience in order to briefly explain the relative relationship between the components. Therefore, the direction at the time of manufacture and use of the product which implements the present invention is not limited.

As shown in FIG. 35, the substrate processing apparatus 500 of the present invention contains a solution holding container 530 in which a substrate processing solution TL is stored and the substrate PB is immersed, and a substrate processing region TS on one surface OF of the immersed substrate PB. And a solution turbulence mechanism 551 for feeding and sucking the substrate processing solution TL.

Since the substrate holding member 510 and the solution holding container 530 require chemical resistance and rigidity, they are made of, for example, engineering plastics such as PVC (polyvinyl chloride).

The solution turbulence mechanism 551 pumps the substrate processing solution TL from the plurality of solution discharge ports 552 to the substrate processing region TS of the one surface OF of the substrate PB and sucks the substrate processing solution TL from the plurality of solution suction ports 553. In the solution turbulence mechanism 551, solution discharge ports 552 and solution suction ports 553 are alternately arranged.

Here, the horizontally long slit-shaped solution discharge ports 552 are arranged in the vertical direction. For example, circular solution discharge ports having an inner diameter of 1 to 5 mm are arranged in a matrix shape or a zigzag shape at intervals of 1 to 20 mm. (Not shown).

Further, as shown in FIGS. 35 to 38, the substrate processing apparatus 500 of the present embodiment has an insertion hole 512 into which the substrate PB is inserted, and an opening hole 511 through which the substrate processing region TS is exposed. And a balloon member 521 that can be expanded and contracted to press-contact the inserted substrate PB disposed inside the other surface of the substrate holding member 510 to the inner surface of the outer periphery of the opening hole 511. And a substrate support jig 522 that supports the substrate PB on the other surface.

The balloon member 521 is made of, for example, a silicon tube having a diameter of 10 mm × t1. The balloon member 521 presses the substrate PB by expansion, and is contracted by a negative pressure when the substrate PB is inserted.

For this reason, the balloon member 521 is required to have a property of expanding and contracting. However, although the balloon member 521 which consists of a syringe tube is illustrated here as an expansion / contraction member, a bellows and an air cylinder can also be utilized as such an expansion / contraction member (not shown).

More specifically, as shown in FIGS. 35 and 36, the solution turbulence mechanism 551 includes a plurality of solution discharge ports 552 and a solution suction port 553 that are flat in the horizontal direction. The substrate processing solution TL is pumped to the substrate processing region TS on one surface of the substrate PB, and the pumped substrate processing solution TL is sucked from the solution suction port 553.

Such pumping and suction of the substrate processing solution TL is performed by, for example, a pump mechanism. The substrate processing solution TL thus pumped and sucked may be sequentially replaced with a new one, may be circulated without being replaced, or may be appropriately replaced with a new one while being circulated.

In addition, the substrate holding member 510 has a rectangular opening hole 511 corresponding to the substrate processing region TS of the substrate PB formed in FIG. 36 and the front surface, and as shown in FIG. A member 521 is disposed.

For example, an air pump is connected to the balloon member 521 by a flexible tube member (not shown), and is expanded by a positive pressure. The positive pressure may be maintained by an air pump or may be maintained by closing the tube member.

As shown in FIGS. 36 and 38, a sealing material 523 that is in close contact with the substrate PB is attached to the inner periphery of the opening hole 511 of the substrate holding member 510. Since the sealing material 523 needs chemical resistance, it is made of, for example, a rubber sponge such as EPDM or FKM.

The sealing material 523 requires discontinuous pores because the substrate processing solution TL leaks out in the continuous pores. Also, flexibility is required to seal by pressing. For this reason, since it is not crushed with a rubber sheet, it is difficult to use it as a seal.

The substrate support jig 522 is made of a plate material that simply supports the substrate PB, and does not seal the other surface of the substrate PB. However, the strength which does not break even if pressed by the balloon member 521 is required.

The substrate processing method of the substrate PB by the substrate processing apparatus 500 of the present embodiment in the configuration as described above will be described below. First, as shown in FIG. 38A, the substrate PB is mounted on the substrate support jig 522 with the one surface OF of the substrate processing region TS as the front.

Next, as shown in FIG. 38 (b), the substrate PB is inserted into the substrate holding member 510 from the insertion port 512 together with the substrate support jig 522. At this time, since the balloon member 521 is reduced, the insertion of the substrate PB is executed smoothly.

Next, as shown in FIG. 38C, the balloon member 521 is expanded, whereby the substrate PB is brought into close contact with the sealing material 523 of the substrate holding member 510. At this time, the substrate processing region TS is positioned in the opening hole 511 of the substrate holding member 510.

Then, the substrate holding member 510 on which the substrate PB is set as described above is immersed in a solution holding container 530 containing the substrate processing solution TL as shown in FIGS.

Then, only the substrate processing region TS of the substrate PB is processed with the substrate processing solution TL from the opening hole 511 of the substrate holding member 510. In this state, the substrate processing solution TL is pumped from the solution discharge port 552 of the solution turbulence mechanism 551 to the solution holding container 530, and the pumped substrate processing solution TL is sucked from the solution suction port 553.

For this reason, the substrate processing solution TL flows in a turbulent manner on the surface of the substrate PB, and the substrate processing region TS of the substrate PB is processed with the turbulent substrate processing solution TL.

In the substrate processing apparatus 500 of this embodiment, the substrate PB is immersed in the substrate processing solution TL stored in the solution holding container 530 as described above. The solution supply mechanism pumps and sucks the substrate processing solution TL into the substrate processing region TS of the substrate PB in such a state.

For this reason, the substrate processing region TS of the one surface OF of the substrate PB is processed by the substrate processing solution TL that is pumped and sucked. Accordingly, only the substrate processing region TS of the one surface OF of the substrate PB can be processed easily and quickly by the substrate processing solution TL that becomes a turbulent flow.

In particular, the solution turbulence mechanism 551 pumps the substrate processing solution TL from the plurality of solution discharge ports 552 and sucks the substrate processing solution TL from the plurality of solution suction ports 553, so that the surface of the substrate processing solution TL on the surface of the substrate PB. The substrate processing solution TL becomes a good turbulent flow, and the processing is performed quickly and satisfactorily.

In addition, since the plurality of solution discharge ports 552 and the plurality of solution suction ports 553 as described above are alternately arranged, the substrate processing region TS of the substrate PB is uniformly processed with the turbulent substrate processing solution TL. Can do.

In addition, in the substrate processing apparatus 500 of the present embodiment, the substrate holding member 510 on which the substrate PB is set as described above is immersed in the substrate processing solution TL in the substrate processing region TS accommodated in the solution holding container 530. Thus, the substrate processing solution TL can be supplied only to the substrate processing region TS of the substrate PB. For this reason, only the substrate processing region TS of the one surface OF of the substrate PB can be easily and quickly processed with the substrate processing solution TL.

The present invention is not limited to the present embodiment, and various modifications are allowed without departing from the scope of the present invention. For example, in the above embodiment, it is assumed that the substrate PB immersed in the substrate processing solution TL in the solution holding container 530 is kept stationary.

However, a substrate swing mechanism (not shown) that swings the substrate PB immersed in the substrate processing solution TL of the solution holding container 530 in the vertical direction may be provided. In this case, it is possible to reduce unevenness in the pumping of the substrate processing solution TL due to the separation of the plurality of solution discharge ports 552 by swinging.

In the above embodiment, the substrate holding member 510 is formed with the rectangular opening hole 511 corresponding to the substrate processing region TS, and the rectangular annular balloon member 521 is disposed behind the rectangular opening hole 511.

However, the balloon member 521 only needs to be able to press-contact the substrate PB to the opening hole 511 of the substrate holding member 510 and, for example, one large balloon member, two upper and lower balloon members, two left and right Or a balloon member (not shown).

In the above embodiment, the substrate PB is set on the box-shaped substrate holding member 510 and only one substrate processing region TS is processed with the substrate processing solution TL. However, the other surface of the substrate PB may be sealed and attached to the substrate support jig 522, and the substrate processing region TS may be processed by immersing the substrate PB in the substrate processing solution TL together with the substrate support jig 522. .

This application is Japanese Patent Application No. 2010-038469 filed on Feb. 24, 2010, Japanese Application No. 2010-132902 filed on Jun. 10, 2010, and filed on Oct. 07, 2010. Japanese Patent Application No. 2010-227118, Japanese Application No. 2010-227120 filed on October 07, 2010, Japanese Patent Application No. 2010-227121 filed on October 07, 2010, Claims the underlying priority and incorporates all of its disclosure here.

Claims

A substrate processing method for processing by bringing a substrate processing solution into contact with a substrate,
Arranging the substrate in the tank so that the substrate surface is parallel to the vertical direction or inclined with respect to the vertical direction;
Immersing the substrate in the substrate processing solution in the tank, and flowing the substrate processing solution along the substrate surface from the upper side in the vertical direction toward the lower side;
Discharging the substrate processing solution flowing along the substrate surface from the tank.
The substrate processing method according to claim 1,
The substrate processing solution is a chemical solution,
Recovering the chemical solution discharged from the tank in an adjustment tank;
Adjust the concentration of the chemical in the adjustment tank, and again supply the chemical in the tank,
The step of flowing the chemical solution along the substrate surface;
The substrate processing method which implements again the said process of discharging | emitting the said chemical | medical solution which flowed along the said substrate surface from the said tank.
The substrate processing method according to claim 2,
The chemical solution is a plating solution,
In the step of flowing the substrate processing solution along the substrate surface from the upper side in the vertical direction toward the lower side,
A substrate processing method for performing a plating process on the substrate by flowing the chemical solution along the substrate surface.
The substrate processing method according to claim 1,
The substrate treatment solution is water;
In the step of flowing the substrate processing solution along the substrate surface from the upper side in the vertical direction toward the lower side,
The substrate is washed by flowing the water along the substrate surface,
In the latter stage of the step of discharging the water flowing along the substrate surface from the tank,
The substrate processing method which collect | recovers the said water and supplies it in the said tank again.
In the substrate processing method in any one of Claims 1 thru | or 4,
In the step of flowing the substrate processing solution along the substrate surface from the upper side in the vertical direction toward the lower side,
A substrate processing method for vibrating the substrate.
In the substrate processing method in any one of Claims 1 thru | or 5,
In the step of flowing the substrate processing solution along the substrate surface from the upper side in the vertical direction toward the lower side,
Connect a pump for discharging the substrate processing solution to a discharge port formed in a portion located on the lower side in the vertical direction than the substrate installed in the tank,
A substrate processing method for sucking a substrate processing solution in the tank by the pump and causing the substrate processing solution to flow along the substrate surface from an upper side in a vertical direction toward a lower side.
In the substrate processing method in any one of Claim 1 thru | or 6,
In the step of flowing the substrate processing solution along the substrate surface from the upper side in the vertical direction toward the lower side,
Substrate processing that pressurizes the substrate processing solution in the tank from the upper side to the lower side in the vertical direction and causes the substrate processing solution to flow along the substrate surface from the upper side in the vertical direction toward the lower side. Method.
In the substrate processing method in any one of Claim 1 thru | or 6,
In the step of flowing the substrate processing solution along the substrate surface from the upper side in the vertical direction toward the lower side,
A substrate processing method of flowing the substrate processing solution in the tank along the substrate surface while overflowing the substrate processing solution from the tank.
In the substrate processing method in any one of Claims 1 thru | or 8,
The substrate processing method, wherein the substrate has a thickness of 10 to 200 μm.
In a substrate processing apparatus for processing by bringing a substrate processing solution into contact with a substrate,
A tank for immersing the substrate in the supplied substrate processing solution while the substrate processing solution is supplied therein;
A holding unit for holding the substrate so that the substrate surface arranged in the tank is parallel to the vertical direction or inclined with respect to the vertical direction;
The supply port of the substrate processing solution in the tank is vertically above the substrate held by the holding unit,
The discharge port of the substrate processing solution in the tank is vertically lower than the substrate held by the holding unit,
When the substrate processing solution is flowed from the supply port of the tank toward the discharge port, the substrate processing solution flows along the substrate surface from the upper side to the lower side in the vertical direction. The substrate processing apparatus comprised in.
The substrate processing apparatus according to claim 10, wherein
The substrate processing solution is a chemical solution,
An adjustment tank for recovering the chemical liquid discharged from the tank and adjusting the concentration of the chemical liquid;
A substrate processing apparatus comprising supply means for supplying a chemical solution in the adjustment tank into the tank.
The substrate processing apparatus according to claim 11, wherein
The chemical solution is a plating solution,
The substrate processing apparatus is a substrate processing apparatus which is a plating apparatus.
The substrate processing apparatus according to claim 10, wherein
The substrate treatment solution is water;
Recovery means for recovering water discharged from the outlet of the tank;
A substrate processing apparatus comprising purification means for purifying collected water.
The substrate processing apparatus according to any one of claims 10 to 13,
A substrate processing apparatus comprising a vibrating means for vibrating the substrate in the tank.
15. The substrate processing apparatus according to claim 10, wherein
Connect the substrate processing solution discharge pump to the discharge port,
A substrate processing apparatus for sucking a substrate processing solution in the tank by the pump.
The substrate processing apparatus according to claim 10, wherein
A pressurizing means for pressurizing the substrate processing solution in the tank downward from the upper side in the vertical direction;
The substrate processing apparatus which pressurizes the substrate processing solution by the pressurizing unit and causes the substrate processing solution to flow along the substrate surface from the upper side in the vertical direction toward the lower side.
The substrate processing apparatus according to claim 10, wherein
The substrate processing apparatus is an overflow tank.
The substrate processing apparatus according to any one of claims 10 to 17,
The substrate processing apparatus provided with the adjustment means which adjusts the quantity of the substrate processing solution discharged | emitted from the said tank.
The substrate processing apparatus according to any one of claims 10 to 18,
The substrate processing apparatus, wherein the substrate to be processed has a thickness of 10 to 200 μm.
A substrate processing method for processing a substrate by bringing a substrate processing solution into contact with the through hole of the substrate in which a through hole penetrating from one substrate surface side to the other substrate surface side of the substrate is formed,
A step of supplying the substrate processing solution, and preparing the tank including a partition that holds the substrate and partitions the tank into a first tank and a second tank together with the held substrate;
Holding the substrate on the partition wall and installing the substrate in the tank;
By supplying a substrate processing solution into the first tank and the second tank to immerse the substrate in the substrate processing solution, and discharging the substrate processing solution from the first tank and the second tank, respectively. And flowing the substrate processing solution along one substrate surface and the other substrate surface of the substrate, and contacting the substrate processing solution in the through hole,
In the step of causing the substrate processing solution to flow along one substrate surface and the other substrate surface of the substrate and bringing the substrate processing solution into contact with the through hole,
A substrate processing method in which an average flow velocity of the substrate processing solution flowing along one substrate surface of the substrate is different from an average flow velocity of the substrate processing solution flowing along the other substrate surface of the substrate.
The substrate processing method according to claim 20, wherein
In the tank, the substrate is held by the partition so that a pair of substrate surfaces are substantially parallel to the vertical direction,
In the first tank and the second tank, the substrate processing solution is allowed to flow along one substrate surface and the other substrate surface of the substrate by flowing the substrate processing solution from the upper side to the lower side in the vertical direction. Substrate processing method.
The substrate processing method according to claim 20 or 21,
The average of the substrate processing solution that flows along one substrate surface of the substrate by setting the first discharge port of the first tank and the second discharge port of the second tank to different sizes. A substrate processing method in which a flow rate is different from an average flow rate of the substrate processing solution flowing along the other substrate surface of the substrate.
The substrate processing method according to claim 20 or 21,
The suction force of the first pump for drainage connected to the first discharge port of the first tank, and the suction force of the second pump for drainage connected to the second discharge port of the second tank The average flow velocity of the substrate processing solution flowing along one substrate surface of the substrate is different from the average flow velocity of the substrate processing solution flowing along the other substrate surface of the substrate. A substrate processing method.
The substrate processing method according to claim 20 or 21,
The substrate treatment solution supplied into the first tank is pressurized and discharged from the first discharge port of the first tank, and the substrate treatment solution supplied into the second tank is pressurized to Let it drain from the second outlet,
One substrate of the substrate is formed by setting a pressure applied to the substrate processing solution supplied into the first tank and a pressure applied to the substrate processing solution supplied to the second tank to different pressures. The substrate processing method which makes the average flow velocity of the said substrate processing solution which flows along a surface differ from the average flow velocity of the said substrate processing solution which flows along the other substrate surface of the said board | substrate.
The substrate processing method according to any one of claims 20 to 24,
The substrate processing solution is a plating solution,
In the step of causing the substrate processing solution to flow along one substrate surface and the other substrate surface of the substrate and bringing the substrate processing solution into contact with the through hole,
A substrate processing method for performing plating in the through hole of the substrate.
In the substrate processing apparatus for processing the substrate by bringing a substrate processing solution into contact with the through hole of the substrate in which a through hole penetrating from one substrate surface side to the other substrate surface side is formed,
The substrate processing solution is supplied inside, the substrate is immersed in the supplied substrate processing solution, the substrate is held, and the tank is partitioned into a first tank and a second tank together with the held substrate. A tank with a partition;
A supply means for supplying the substrate processing solution into the first tank and the second tank of the tank,
The substrate processing apparatus is configured such that the substrate processing solution supplied from the supply unit flows along one substrate surface and the other substrate surface of the substrate and contacts a through hole of the substrate,
The substrate processing apparatus which has an adjustment means which makes different the average flow velocity of the said substrate processing solution which flows along the one substrate surface of the said substrate, and the average flow velocity of the said substrate processing solution which flows along the other substrate surface of the said substrate.
The substrate processing apparatus according to claim 26, wherein
The first supply port of the substrate treatment solution in the first tank and the second supply port of the substrate treatment solution in the second tank are vertically above the substrate held by the partition wall,
The first discharge port of the substrate processing solution in the first tank and the second discharge port of the substrate processing solution in the second tank are below the substrate held by the partition wall in the vertical direction,
When the substrate processing apparatus flows the substrate processing solution from the first supply port toward the first discharge port, and flows the substrate processing solution from the second supply port toward the second discharge port, A substrate processing apparatus configured such that a processing solution flows along one substrate surface and the other substrate surface of the substrate from an upper side in a vertical direction toward a lower side.
28. The substrate processing apparatus according to claim 26 or 27, wherein:
The adjusting means includes a first discharge port for the substrate processing solution in the first tank and a second discharge port for the substrate processing solution in the second tank that is different in size from the first discharge port. Substrate processing equipment.
The substrate processing apparatus according to claim 26 or 27,
The adjusting means includes a first pump for drainage connected to the first outlet of the first tank;
A second pump for drainage connected to the second outlet of the second tank;
The substrate processing apparatus, wherein the suction force of the first pump is different from the suction force of the second pump.
The substrate processing apparatus according to claim 26 or 27,
The adjusting means pressurizes the substrate processing solution supplied into the first tank and discharges it from the first outlet of the first tank;
A second pressurizing unit configured to pressurize the substrate processing solution supplied into the second tank and discharge it from the second discharge port of the second tank;
A substrate processing apparatus in which a pressing force applied to the substrate processing solution from a first pressurizing unit is different from a pressing force applied to the substrate processing solution from a second pressurizing unit.
The substrate processing apparatus according to any one of claims 26 to 30, wherein
The substrate processing solution is a plating solution,
The said processing apparatus is a substrate processing apparatus which is an apparatus which performs a plating process in the said through-hole of the said board | substrate.
A box-shaped substrate holding member in which an opening hole for exposing a substrate processing region on one surface of the substrate is formed on one surface and an insertion port is formed on the upper surface;
An expandable / contractible member that is arranged inside the other surface of the substrate holding member and presses the inserted substrate against the inner surface of the outer periphery of the opening hole;
A substrate processing apparatus.
The substrate processing apparatus according to claim 32, further comprising a solution holding container that contains the substrate processing solution in the substrate processing region and in which the substrate holding member on which the substrate is set is immersed.
34. The substrate processing apparatus according to claim 32, further comprising a solution supply mechanism that sequentially supplies the substrate processing solution to the solution holding container.
35. The substrate processing apparatus according to claim 34, wherein the solution supply mechanism drops the substrate processing solution from above to below.
36. The substrate processing apparatus according to claim 35, further comprising a solution turbulence mechanism that pumps the substrate processing solution falling from above to the substrate processing region.
36. The substrate processing apparatus according to claim 35, further comprising a solution turbulence mechanism that pumps and sucks the substrate processing solution to the substrate processing region.
A solution holding container in which the substrate processing solution is stored and the substrate is immersed;
A solution supply mechanism that sequentially supplies the substrate holding solution by dropping it from above to the solution holding container;
A solution turbulence mechanism for pumping the substrate processing solution falling downward from above to a substrate processing region on one side of the substrate;
A substrate processing apparatus.
39. The substrate processing apparatus according to claim 38, wherein the solution turbulence mechanism pumps the substrate processing solution from a plurality of solution discharge ports to the substrate processing region on one surface of the substrate.
40. The substrate processing apparatus according to claim 38, further comprising a substrate swinging mechanism that swings the substrate immersed in the substrate processing solution in the solution holding container in a vertical direction.
A box-shaped substrate holding member in which an insertion hole into which the substrate is inserted is formed on the upper surface and an opening hole through which the substrate processing region is exposed is formed on one surface;
An expandable / contractible member that is arranged inside the other surface of the substrate holding member and presses the inserted substrate against the inner surface of the outer periphery of the opening hole;
41. The substrate processing apparatus according to claim 38, comprising:
Immerse the substrate in the substrate processing solution stored in the solution holding container,
The substrate processing solution is dropped from above into the solution holding container and supplied sequentially,
A substrate processing method, wherein the substrate processing solution falling downward from above is pumped to the substrate.
A solution holding container in which the substrate processing solution is stored and the substrate is immersed;
A solution turbulence mechanism in which the substrate processing solution is pumped and sucked against a substrate processing region on one surface of the immersed substrate;
A substrate processing apparatus.
44. The substrate according to claim 43, wherein the solution turbulence mechanism pumps the substrate processing solution from a plurality of solution discharge ports to a substrate processing region on one surface of the substrate and sucks the substrate processing solution from a plurality of solution suction ports. Processing equipment.
45. The substrate processing apparatus according to claim 44, wherein the solution turbulence mechanism has the solution discharge port and the solution suction port arranged in a predetermined order.
46. The substrate processing apparatus of claim 45, wherein the solution turbulence mechanism has the solution discharge ports and the solution suction ports arranged alternately.
47. The substrate processing apparatus according to claim 43, further comprising a substrate swinging mechanism that swings the substrate immersed in the substrate processing solution of the solution holding container in a vertical direction.
A box-shaped substrate holding member in which an insertion hole into which the substrate is inserted is formed on the upper surface and an opening hole through which the substrate processing region is exposed is formed on one surface;
An expandable / contractible balloon member that is disposed inside the other surface of the substrate holding member and presses the inserted substrate against the inner surface of the outer periphery of the opening;
48. A substrate processing apparatus according to any one of claims 43 to 47, comprising:
Immerse the substrate holding member in the substrate processing solution stored in the solution holding container,
A substrate processing method for pumping and sucking the substrate processing solution to one surface of the immersed substrate processing region.