JPS5817867A - Surface treatment method of plate having small hole and its device - Google Patents

Surface treatment method of plate having small hole and its device

Info

Publication number
JPS5817867A
JPS5817867A JP11557881A JP11557881A JPS5817867A JP S5817867 A JPS5817867 A JP S5817867A JP 11557881 A JP11557881 A JP 11557881A JP 11557881 A JP11557881 A JP 11557881A JP S5817867 A JPS5817867 A JP S5817867A
Authority
JP
Japan
Prior art keywords
plate
processing chamber
narrow
liquid
small holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11557881A
Other languages
Japanese (ja)
Inventor
Kenji Yamamoto
健治 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EEJA Ltd
Original Assignee
Electroplating Engineers of Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electroplating Engineers of Japan Ltd filed Critical Electroplating Engineers of Japan Ltd
Priority to JP11557881A priority Critical patent/JPS5817867A/en
Publication of JPS5817867A publication Critical patent/JPS5817867A/en
Pending legal-status Critical Current

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Landscapes

  • Application Of Or Painting With Fluid Materials (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemical Treatment Of Metals (AREA)
  • ing And Chemical Polishing (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)

Abstract

PURPOSE:To perform a uniform surface treatment to the surface and the inside surface of a small hole at a high speed, by making a treatment liquid flow at a high speed along the side of a plate having the small hole. CONSTITUTION:When a plate 8 is led into a treatment chamber 1a through a carrying device, a flow course 14 being narrow in width d2 is formed between a side 8a of the plate 8 and a wall surface 2a, which are between walls 2, 3 opposed at an interval d1 being narrow in width. When a plating liquid A is fed from a nozzle chamber 18, the plating liquid A becomes a high speed flow, flows to the upper end from the lower end of the plate 8 in the flow course 14, overflows the wall 3, and flows out into a collecting chamber 16. On the other hand, the plating liquid A fills a flow course 15, but since it flows in the flow course at a high speed, the inside of a small hole 22 of the plate 8 is converted to negative pressure, and the liquid is absorbed through the small hole 22 from the flow course 15 side. In this state, anodes 4, 5 and the plate 8 are converted to an anode and a cathode by electrification, and both sides 8a, 8b of the plate 8 and the inside surface of plural small holes 22 are plating-treated at a high speed.

Description

【発明の詳細な説明】 本発明は小孔%に微小孔を複数有するプレートの表面処
理方法及びその装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method and apparatus for surface treatment of a plate having a plurality of micropores in the porosity.

メッキ、エツチング、活性化、脱脂、防錆その他の表面
処理を被処理物としての小孔を有するプレートに効率良
く施す方法及び装置は本発明者の知り得る範囲において
それ程存在せず特に上記プレートの側面のみならず小孔
の内面をも併せて表面処理する技術、例えばプリント配
線基板に対し銅メツキ処理する技術は極少である。これ
らの状況に注目して本発明者が種々実験を行なつ九結果
、上記の如と表面処理をプレー)K施す場合そのプレー
トの側面に沿って高速流にした処理液を施す千5にすれ
ば極めて効率的な表面処理を行なうことがでとるとの知
見を得て本発明に係る方法及び装置を提案せんとするも
のである。
To the best of the present inventor's knowledge, there are not many methods and apparatuses for efficiently applying plating, etching, activation, degreasing, rust prevention, and other surface treatments to plates with small holes as objects to be treated. There are very few techniques for surface-treating not only the side surfaces but also the inner surfaces of small holes, such as techniques for copper-plating printed wiring boards. The inventor of the present invention has conducted various experiments focusing on these situations, and has found that when surface treatment is applied as described above, a high-velocity flow of treatment liquid is applied along the sides of the plate. Based on the knowledge that surface treatment can be carried out extremely efficiently, we propose the method and apparatus according to the present invention.

本発明に係る表面処理方法は、まず第1に幅狭の処理室
を用意しこの処理室内へ被処理物としての「小孔を有す
るプレート」を導くものである。プレートとしては表面
処理の内容に応じ九プレート例えばプリント配線基板、
エツチング用のプレートその他であす、以上及び以下の
説明において「プレート」とは板状、シート状、コイル
状、短冊状、フィルム状などを含む広概念の被処理物を
意味するものであ番0次いでこのようなプレートの側面
と処理室の壁面との狭い間〔例えば2III11〜50
Mの間隔〕で、プレートの片側面に沿って一端から他端
へかけて処理液を高速流にして流して施すものである。
In the surface treatment method according to the present invention, first, a narrow processing chamber is prepared, and a "plate with small holes" as an object to be processed is guided into this processing chamber. There are nine plates depending on the surface treatment, such as printed wiring boards,
In the above and following explanations, the term "plate" refers to a wide range of objects to be processed, including plates, sheets, coils, strips, films, etc. Next, a narrow space between the side surface of such a plate and the wall surface of the processing chamber [for example, 2III11-50
The process is performed by flowing the processing liquid in a high-speed flow along one side of the plate from one end to the other at a distance of M.

プレートの片側面に沿って流れる処理液の方向性は特に
限定されずプレートの一端より他端まで処理液を流して
施せれば上下、左右、前後など方向性は問わないもので
ある。この時、プレートの他方の片側面〔他側面〕VC
あっては前記高速流より遅い速度の処理液を流すか或は
単に処理液を存在させておけばよい、また処理液は表面
処理の内容に応じ適宜の表面処理液例えは銅メツキ用の
メッキ液、電解・非電解エツチング用のエツチング溶液
、活性化液、脱脂液、防錆液その他が選ばれることは熱
論でらる。
The directionality of the processing liquid flowing along one side of the plate is not particularly limited, and as long as the processing liquid can be flowed from one end of the plate to the other end, the directionality, such as up and down, left and right, front and back, does not matter. At this time, the other side of the plate [other side] VC
If so, it is sufficient to flow a processing liquid at a speed slower than the above-mentioned high-speed flow, or simply to allow the processing liquid to exist.The processing liquid may be an appropriate surface treatment liquid depending on the content of the surface treatment, such as a copper plating solution. It is a matter of great debate that etching solutions for electrolytic and non-electrolytic etching, activating solutions, degreasing solutions, anti-corrosion solutions, and others should be selected.

このようにすれば被処理物としてのプレートの側面特に
高速流の施された側の面には高速度で表面処理が施され
ることになる。そして処理液をプレートの一方の片側面
と処理室の壁面との狭い間へ施す際、プレートの他方の
片側面〔他側面〕に処理液を存在させるか又は単に存在
させるだけでなく前記高速流よりも遅い速度で流して施
せば、プレートの双方の側面の処理液に速度差が生じる
ことによりプレートの複数の小孔内はそれぞれ負圧化さ
れ高速流側に非高速流側から処理液が吸い込まれて一方
又は双方の側面のみならず小孔内面にも均一な表面処理
が併せて施されるようになる。
In this way, the side surface of the plate serving as the object to be treated, particularly the side surface to which the high-speed flow has been applied, will be surface-treated at high speed. When the processing liquid is applied to the narrow space between one side of the plate and the wall of the processing chamber, the processing liquid is present on the other side of the plate (other side), or in addition to being simply present, the high-speed flow If the treatment is carried out at a slower speed, a speed difference will occur between the processing liquid on both sides of the plate, creating a negative pressure in each of the small holes of the plate, and the processing liquid will flow from the non-high-speed flow side to the high-speed flow side. As it is sucked in, a uniform surface treatment is applied not only to one or both side surfaces but also to the inner surface of the small hole.

次に本発明に係る表面処理装置について説明する。この
装置は主に処理室とノズル室とから構成され、処理室は
一対の壁を幅狭にして対峙せしめその間に被処理物とし
ての小孔を有するプレートを位置決め自在とし且つプレ
ートの側面及びこの側面に対応する壁面との間にプレー
トの長さに見合う処理液の幅狭な流路を形成している。
Next, a surface treatment apparatus according to the present invention will be explained. This device is mainly composed of a processing chamber and a nozzle chamber. A narrow channel for processing liquid corresponding to the length of the plate is formed between the side surface and the corresponding wall surface.

そしてノズル室は処理室内の幅狭な流路に処理液の均一
な高速流を供給するようにしているものである。
The nozzle chamber is configured to supply a uniform high-speed flow of processing liquid to a narrow flow path within the processing chamber.

次に本発明〔装置〕の詳細を図面を参照して説明する。Next, details of the present invention [apparatus] will be explained with reference to the drawings.

第1図〜第4図は装置の一実施例を示す図である。この
実施例では、処理室1が縦形状に形成されていて、第1
処理室1aと第2処理室1bとを備えている。第1処理
室1aは一対の壁λ3を幅狭にして対峙させている0図
中へが幅狭な間隔を示す、壁2.3の内側にはプレート
状、メッンユ状などのアノード4.5が設けてあり各ア
ノード4.5は整流器6に接続しである。
1 to 4 are diagrams showing one embodiment of the apparatus. In this embodiment, the processing chamber 1 is formed in a vertical shape, and the first
It includes a processing chamber 1a and a second processing chamber 1b. The first processing chamber 1a has a pair of narrow walls λ3 that face each other.The inside of the figure shows a narrow interval.The inside of the wall 2.3 has an anode 4.5 in the shape of a plate or menu. are provided and each anode 4.5 is connected to a rectifier 6.

7はガイドで、プレート8の搬送用及び位置決め用のも
ので処理室1aのほぼ中央で且つ長手方向にわたって形
成されている。プレート8に搬送装置9を介し処理室1
tL内へ導かれるようにしである。図示の例で、搬送装
置9はチェーンコンベア10と、絶縁性ベース11を介
して一対吊り下げ友挟持クリップ12とから構成されて
おり、連続、間欠を問わずプレート8を吊り下げ処理室
1a内に搬送するものである。13はカーボンブラシ又
はワイヤーブラシ等で、挟持クリップ12に:通電して
プレート8をカソード化するようにしている。処理室1
a内にプレート8が導かれた状態においてプレート8の
側面8I!Lとこの側面8aK対厄する壁面2aとの間
にはプレート8の長さlに見合う処理液〔以下その例示
としてメッキ液と称す〕Aの幅狭な流路14が形成され
る。プレート80側面8bと壁面3aとの間には第2の
流路15が形成される。
A guide 7 is used for transporting and positioning the plate 8, and is formed approximately in the center of the processing chamber 1a and extending in the longitudinal direction. The processing chamber 1 is transferred to the plate 8 via the conveyance device 9.
It is intended to be guided into tL. In the illustrated example, the conveyance device 9 is composed of a chain conveyor 10 and a pair of hanging clips 12 via an insulating base 11, and suspends the plate 8 continuously or intermittently within the processing chamber 1a. It is intended to be transported to Reference numeral 13 is a carbon brush, wire brush, or the like, and the holding clip 12 is energized to turn the plate 8 into a cathode. Processing room 1
The side surface 8I of the plate 8 in the state where the plate 8 is guided into the inside a! A narrow flow path 14 for a processing liquid (hereinafter referred to as plating liquid) A corresponding to the length l of the plate 8 is formed between L and the side surface 8aK and the troublesome wall surface 2a. A second flow path 15 is formed between the side surface 8b of the plate 80 and the wall surface 3a.

16は処理液Aの回収室で、処理室1a[隣接されてい
る。17は回収用のパイプで、図示せぬメッキ液槽に接
続されている。
16 is a recovery chamber for the processing liquid A, which is adjacent to the processing chamber 1a. A recovery pipe 17 is connected to a plating liquid tank (not shown).

18にノズル室で、処理室1aの底部側に一体的に設け
てあり、内部に長手方向にわたって設けた整流板19を
有しそしてノズル口20は処理室1aの幅狭な流路14
と連通状態にしである。
A nozzle chamber 18 is integrally provided on the bottom side of the processing chamber 1a, and has a rectifying plate 19 provided inside thereof in the longitudinal direction, and a nozzle port 20 is connected to the narrow flow path 14 of the processing chamber 1a.
It is in communication with.

23はロッキング装置で、プレート8を進行方向の前後
でガイド7より外れぬ範囲内で運動せしめる装置であり
、カム24、スプロケット25その他の機械的手段、電
気的手段を採用するものである。尚、プレートBoロッ
キングの方向はプレート8の小孔22の軸方向と交差す
る方向であればよく上記のように「前後」K限定されず
、又運動の状態も往復運動、円運動、楕円運動等積々の
ものが採用でとる。このロッキング装置23はプレート
8に運動を与えて、小孔220周辺の表面処理を均一化
するためのもので、例えば銅メツキ処理の際小孔22の
開口近辺にメッキ液の流れ方向の跡がつくといういわゆ
る「なみだ現象」の発生を防止するものである。
Reference numeral 23 denotes a locking device which allows the plate 8 to move forward and backward in the direction of travel within a range within which it does not come off the guide 7, and employs a cam 24, a sprocket 25, and other mechanical or electrical means. The direction of plate Bo locking may be any direction that intersects the axial direction of the small hole 22 of the plate 8, and is not limited to "back and forth" as described above, and the state of motion may also be reciprocating motion, circular motion, or elliptical motion. Those who have the same amount of money will be accepted in the recruitment process. This locking device 23 is used to give movement to the plate 8 to make the surface treatment around the small holes 220 uniform. For example, during copper plating, marks in the flow direction of the plating solution are left in the vicinity of the openings of the small holes 22. This prevents the occurrence of the so-called "sloppy phenomenon".

第2処理室1bではプレート80側面8bと壁面3aと
の間に幅狭な流路21が形成されるようにしてありその
他の構成は第1処理室1aとほぼ対称的なものとされて
おり同一乃至類似部分を図中同一符号で示すに止め説明
は省略する。
In the second processing chamber 1b, a narrow channel 21 is formed between the side surface 8b of the plate 80 and the wall surface 3a, and the other structure is almost symmetrical to the first processing chamber 1a. Identical or similar parts are indicated by the same reference numerals in the drawings, and explanation thereof will be omitted.

次に作用を説明する。Next, the action will be explained.

搬送装置9を介し処理室1sL内にプレート8が導かれ
ると、このプレート8がガイド7により処理室1a内の
中央に位置決めされる結果、幅狭な間隔d、で対峙され
た壁2.3間[6つて、プレート8の側面8aと壁面2
a間に幅狭d、な流路14が形成される。そしてノズル
室18よりメッキ液Aが供給されると、メッキ液ムは高
速流となって流路14内をプレート8の下端(一端)よ
り上端(他端)Kかけて流れ壁3をオーバーフローし回
収室16内へ流出する。一方でメッキ液Aは矢示Xの如
く第20流路15内Kf1人しそこに充満するが、流路
14内をメッキ液Aが高速流となって流れるのでプレー
ト8の小孔22内が負圧化され第2の流路15側より小
孔22内を通りメッキ液ムが矢示Yの如く吸い込まれ且
つ流路14側へ流出してゆく。このような状sVcおφ
てアノード4.5及びプレート8が各々通電によりアノ
ード化、カソード化されることによりプレート80両側
面8&、8bのメッキ処理とともに複数の小孔22の内
面に対するメッキ処理が極めて高速度で行なわれるもの
でおる。
When the plate 8 is guided into the processing chamber 1sL via the transport device 9, the plate 8 is positioned at the center of the processing chamber 1a by the guide 7, and as a result, the walls 2.3 facing each other at a narrow interval d. between the side surface 8a of the plate 8 and the wall surface 2
A narrow channel 14 is formed between a and a. When the plating solution A is supplied from the nozzle chamber 18, the plating solution becomes a high-speed flow and flows through the channel 14 from the lower end (one end) to the upper end (other end) K of the plate 8, overflowing the wall 3. It flows out into the recovery chamber 16. On the other hand, the plating solution A fills the 20th channel 15 as shown by arrow The plating liquid is sucked in from the second flow path 15 side through the small hole 22 as shown by arrow Y, and flows out to the flow path 14 side. Such a state sVc φ
By turning the anode 4.5 and the plate 8 into anodes and cathodes by energizing, the plating process on both sides 8 & 8b of the plate 80 as well as the inner surfaces of the plurality of small holes 22 is performed at an extremely high speed. I'll go.

第5図〜第7図は各々本発明〔装置〕の他の実施例を示
す図である。これらの実施例では、前記の処理室1a、
IbK対し縦形状に形成されている処理室30が各々1
つ示されプレート8の両側面aa、abと対応壁面2a
、3ar&15にプレート8の長さlVc見合うメッキ
液ムの幅狭な流路31.32がそれぞれ形成されるよう
にしてあり、そしてメッキ液Aの均一な高速流を供給す
るノズル室33と処理室30との間にはメッキ液Aを流
路31.32のいずれか或は双方に導く流路切換装置3
4.35.36が設けである。第5図の実施例で、流路
切換装置34は圧力シリンダ37にでスライド自在な弁
体38が、第6図の実施例で流路切換装置35は同じく
圧力シリンダ39にて回動自在な弁体40が、そして第
7図の実施例で流路切換装置36は純流体素子として「
側壁付着形素子」が、それぞれ示しである。これらの流
路切換装置34.3!x36は双方の幅狭な流路31.
32に、交互に、メッキ液ムの均一な高速流を導くよう
に機能するが、2つの幅狭な流路31.32の双方に導
くように機能することもできるようにしである。
FIGS. 5 to 7 are views showing other embodiments of the present invention [apparatus]. In these embodiments, the processing chamber 1a,
Each of the processing chambers 30 formed in a vertical shape with respect to IbK is one
Both sides aa and ab of the plate 8 and the corresponding wall surface 2a are shown.
, 3ar & 15 are formed with narrow passages 31 and 32 for the plating liquid A corresponding to the length lVc of the plate 8, and a nozzle chamber 33 and a processing chamber that supply a uniform high-speed flow of the plating liquid A. 30, there is a flow path switching device 3 that guides the plating solution A to either or both of the flow paths 31 and 32.
4.35.36 is established. In the embodiment shown in FIG. 5, the flow path switching device 34 has a valve body 38 which is slidable by a pressure cylinder 37, and in the embodiment shown in FIG. The valve body 40 and, in the embodiment of FIG.
"Side wall attached element" are respectively shown. These flow path switching devices 34.3! x36 indicates both narrow channels 31.
32 alternately serve to direct a uniform, high-velocity flow of plating fluid, but can also serve to direct both into two narrow channels 31,32.

その他の構成については、先の実施例〔第1〜第4図〕
と略同様につき同一乃至類似部分を同一符号にて示し重
複説明は省略する。淘、第5〜第7図の各実施例にあっ
ては、それぞれ2台の整流器41.42がアノード4.
5に接続され、メッキ液Aが流れる方のアノード4又は
5に高電流を流し又メッキ液ムの流れぬ方のアノード5
又は4に低電流を流すよう和しである。
For other configurations, see the previous embodiment [Figures 1 to 4]
The same or similar parts are designated by the same reference numerals and repeated explanations will be omitted. In each of the embodiments shown in FIGS. 5 to 7, two rectifiers 41 and 42 are connected to the anodes 4 and 4, respectively.
5, a high current is applied to the anode 4 or 5 through which the plating solution A flows, and the anode 5 through which the plating solution A does not flow.
Or, it is summed so that a low current flows through 4.

又回収室16tj:処理室30に一対形成しである。A pair of recovery chambers 16tj are formed in the processing chamber 30.

次に作用を説明する。搬送装置9を介し処理室30内に
プレート8が導かれ良状態に於いて、流路切換装置34
.35.36を働かせ、流路31を開流路32を閉とす
ればノズル室33から供給されるメッキ液ムは高速流と
なって流路31内に入りプレート8の下端(一端)より
上端(他端)にかけてプレート8の側面8aK沿って流
れ、プレート8の上端を越えその一部が、流路32内へ
入り、両流路31.32内で充満し良状態になりしだ一
部2.3をオーバーフローし回収室16内へ流出する。
Next, the effect will be explained. When the plate 8 is guided into the processing chamber 30 via the transport device 9 and is in good condition, the flow path switching device 34
.. 35 and 36 to open the flow path 31 and close the flow path 32, the plating liquid supplied from the nozzle chamber 33 becomes a high-speed flow and enters the flow path 31 from the lower end (one end) of the plate 8 to the upper end. (the other end), flows along the side surface 8aK of the plate 8, crosses the upper end of the plate 8, and a part of it enters the flow path 32, and both flow paths 31 and 32 are filled and a part of the flow reaches a good condition. 2.3 overflows and flows into the collection chamber 16.

この時流路31内をメッキ液Aの高速流が流れる結果、
先の実施例と同様に流路32内のメッキ液ムが吸い込ま
れて小孔22内を流れ〔矢示Y〕且つ流路4側へと流出
してゆき、この状態でアノード4.5及びプレート8が
通電されて各々アノード化カソード化されればプレート
8の両側面8’L%8bのメッキ処理とともに小孔22
の内面に対するメッキ処理が極めて高速度で行なわれる
ものである。
At this time, as a result of the high-speed flow of plating solution A flowing in the flow path 31,
As in the previous embodiment, the plating liquid in the flow path 32 is sucked in, flows through the small hole 22 [arrow Y], and flows out to the flow path 4 side, and in this state, the anode 4.5 and When the plate 8 is energized and turned into an anode and a cathode, both sides 8'L%8b of the plate 8 are plated and the small holes 22 are formed.
The plating process on the inner surface of the plate is performed at extremely high speed.

第8図〜第11図は本発明〔装置〕の更に他の実施例を
示す図である。先の各実施例〔第8図〜第1図〕は縦型
の装置を示してしたが、この実施例ではこれに対して横
部の装置が示され。
FIGS. 8 to 11 are diagrams showing still other embodiments of the present invention [apparatus]. While the previous embodiments (FIGS. 8 to 1) have shown vertical devices, this embodiment shows a horizontal device.

る、この表面処理装置は、処理室50が第1処理室50
a及び第2処理室50bとで構成され第9図及び第10
図で示すように両処理室50a。
In this surface treatment apparatus, the processing chamber 50 is the first processing chamber 50.
9 and 10.
As shown in the figure, both processing chambers 50a.

50bは上下対称的な構造とされている。従って以下で
は主に第1処理室50aのみ説明し、第2処理室50b
については必要に応じて参照するにとどめる。
50b has a vertically symmetrical structure. Therefore, in the following, only the first processing chamber 50a will be mainly explained, and the second processing chamber 50b will be mainly explained.
I will only refer to it as necessary.

第1処理室50aは一対の壁としての底板51と天板5
2を幅狭な間隔d、で対峙させており、各底板51と天
板52の内側にはメツシュ状のアノード53.54が張
設しである。これらアノード53.54は図示せぬ整流
器に接続される。55.56は一対のガイドで、その溝
内に被処理物としての「小孔5Tを有するプレート58
」の一端と他端をスライド自在にして支持ψ位置決めす
るようにして−る。一方のガイド55は区画壁59の内
側面に沿っていわば断続的にして設けてあり、後述する
ように処理液ムが図中矢印の如く下より上方へとガイド
55の隙間60を通り抜けて流れるようにしである。プ
レート58の搬送はドライブ及びアイドルの各ローラ群
61の組合わせに依っており、パスライン62〔第11
図参照〕に沿ってプレート58を第1処理室50a、第
2処理室50bへと搬送するようにしている。淘第11
図で示すようにローラ群61の一部はプレート58をカ
ソード化すべく図示せぬ整流器に接続され且つカソード
として働かされるよう和しである。第1処理室5Qa内
にプレート58が導かれた状態に於いて、このプレート
58の下側面58aと底板51との間には処理液A〔以
下ではメッキ液と称す〕のための幅狭な間隔d2の下側
の流路63が、又同じくプレート58の上側面58bと
天板52との間に幅狭な上側の流路64が各々形成され
る。第1処理室50aの下側の流路63K、そして又第
2処理室50bの上側の流路64に、各々同様なノズル
室65が接続してあり、メッキ液ムを整流しつつ高速流
にして噴射するようにしている。66はメッキ液Aの回
収室で、区画$59をオーバーフローし九メッキ液Aを
回収し、図示せぬメッキ槽にメッキ液Aを戻す。
The first processing chamber 50a has a bottom plate 51 and a top plate 5 as a pair of walls.
2 are faced to each other with a narrow interval d, and mesh-like anodes 53 and 54 are stretched inside each bottom plate 51 and top plate 52. These anodes 53, 54 are connected to a rectifier (not shown). Reference numerals 55 and 56 designate a pair of guides, in which a plate 58 having a small hole 5T as an object to be processed is placed in its groove.
'' One end and the other end are slidable to position the support ψ. One of the guides 55 is disposed intermittently along the inner surface of the partition wall 59, and as will be described later, the processing liquid flows through the gap 60 of the guide 55 from the bottom to the top as shown by the arrow in the figure. That's how it is. The conveyance of the plate 58 depends on the combination of the drive and idle roller groups 61, and the pass line 62 [11th
(see figure)], the plate 58 is conveyed to the first processing chamber 50a and the second processing chamber 50b. Tao No. 11
As shown, a portion of the roller group 61 is connected to a rectifier (not shown) to cathode the plate 58 and is adapted to act as a cathode. When the plate 58 is guided into the first processing chamber 5Qa, there is a narrow space between the lower surface 58a of the plate 58 and the bottom plate 51 for the processing solution A (hereinafter referred to as plating solution). A lower channel 63 with a distance d2 is formed, and a narrow upper channel 64 is formed between the upper surface 58b of the plate 58 and the top plate 52. Similar nozzle chambers 65 are connected to the lower flow path 63K of the first processing chamber 50a and the upper flow path 64 of the second processing chamber 50b, and the plating liquid is rectified and flowed at high speed. I'm trying to spray it. 66 is a collection chamber for plating solution A, which overflows compartment $59, collects plating solution A, and returns plating solution A to a plating tank (not shown).

尚、プレート58は図示せぬロッキング装置にてメッキ
液A中でロッキング自在とされている。
The plate 58 can be freely locked in the plating solution A using a locking device (not shown).

次に作用を説明する。プレート58が第1処理室5Oa
内にガイド55及び各ローラ群61により導かれ、下側
の幅狭な流路63内にノズル室65よりメッキ液ムが高
速流にして施されると、このメッキ液Aのmartプレ
ート5Bの下側面58aの一端より他端にかけてその下
側面58aに沿って流れ、その一部は上側の流路64内
に流れそこに充満するが、下側の流路58a内でメッキ
液Aが高速流として流れることにより負圧が生じ、プレ
ート58の各小孔57を通って、第9図及び第10図中
矢印で示すように、上側の流路64内のメッキ液ムが下
側の流路63内のメッキ液流に吸込まれてゆぎ、プレー
ト58の下側面59aのみならず各小孔57の内面まで
が高速度でメッキ処理される0次いでプレート58が第
2処理室50b内に到れば同様にプレート58の上側面
58bのみならず小孔57の内面がメッキ処理される。
Next, the effect will be explained. The plate 58 is the first processing chamber 5Oa
When the plating liquid A is guided by the guide 55 and each roller group 61 in a high-speed flow from the nozzle chamber 65 into the narrow flow path 63 on the lower side, the plating liquid A is applied to the mart plate 5B. It flows along the lower surface 58a from one end to the other end of the lower surface 58a, and a part of it flows into the upper channel 64 and fills it, but the plating solution A flows at high speed in the lower channel 58a. As a result, a negative pressure is generated by the plating liquid flowing in the upper channel 64 through each small hole 57 of the plate 58, as shown by the arrows in FIGS. 9 and 10. The plate 58 is sucked into the plating solution flow in the plating chamber 63, and not only the lower surface 59a of the plate 58 but also the inner surface of each small hole 57 is plated at a high speed.Then, the plate 58 reaches the second processing chamber 50b. If so, not only the upper surface 58b of the plate 58 but also the inner surface of the small hole 57 is plated.

第12図は横型の装置の更に他の実施例を示す。第8図
〜第11図の実施例では処理室50が第1処理室50a
と第2処理室50bとで形成されてプレート58の下側
面と上側面のメッキ処理が別の処理室で順次行なわれた
が、この実施例では、1つの処理室67に流路切換装置
68としての圧力シリンダ−69及び弁70が備えられ
、交互にメッキ処理でとるようにしである。従って、こ
の実施例によれば、弁70の切換によってメッキ液Aが
下側の幅狭な流路71又は上側の幅狭な流路72へ高速
流で施され、プレート58の下側面58a1同上側面5
8bが交互にメッキ処理され、併せ小孔51の内面も先
の実施例と同様にメッキ処理される。その・・ ) 他の構成及び作用については第8図〜第11図の実施例
とほぼ同様につき重複説明を省略するものとする。
FIG. 12 shows yet another embodiment of the horizontal device. In the embodiments shown in FIGS. 8 to 11, the processing chamber 50 is the first processing chamber 50a.
and a second processing chamber 50b, and plating the lower and upper surfaces of the plate 58 was sequentially performed in separate processing chambers, but in this embodiment, one processing chamber 67 is provided with a flow path switching device 68. A pressure cylinder 69 and a valve 70 are provided, which are alternately plated. Therefore, according to this embodiment, by switching the valve 70, the plating solution A is applied at high speed to the lower narrow channel 71 or the upper narrow channel 72, and the lower surface 58a1 of the plate 58 is side 5
8b are alternately plated, and the inner surfaces of the small holes 51 are also plated in the same manner as in the previous embodiment. ) The other configurations and operations are substantially the same as those of the embodiment shown in FIGS. 8 to 11, so redundant explanation will be omitted.

尚以上の説明に於いて、メッキ処理を例[して説明して
来たが勿論これに特定されずその他の表面処理でも同様
に本発明は適応されるものである。
In the above description, plating treatment has been used as an example, but the present invention is of course not limited to this and can be similarly applied to other surface treatments.

以上説明して来たように、本発明によればその構成を被
処理物としての小孔を有するプレートを処理室へ導と、
プレート側面と処理室の壁面との狭い間で、プレートの
片側面に沿ってその一端より他端へかけ高速流にした処
理液を流して施し小孔内面をも表面処理するようにし〔
第1発明〕そして又一対の壁を幅狭にして対峙せしめそ
の間に被処理物としての小孔を有するプレートを位置決
め自在とし且つプレートの側面及びこの側面に対応する
壁面との間にプレートの長さに見合う処理液の幅狭な流
路を形成する処理室と、そしてこの処理室内の幅狭な流
路に処理液の均一な高速流を供給するノズル室とを備え
ることとした喪め、被処理物としての小孔を有するプレ
ートの両側面に高速度でメッキ、エツチング、防錆その
他意図する表面処理な効率よく施すことかでと、又プレ
ートの複数の小孔内面へも均一に高速度で且つ効率よい
表面処理を施すことかでと、更にロッキング装置を介し
てプレートを運動させれば小孔周辺の表面処理を均一に
でき、例えば銅メツキ処理の際小孔の開口近辺に発生し
易い「なみだ現象」を未然に防止することもでとて、得
られる効果は多大なものがある。
As explained above, according to the present invention, the structure is such that a plate having small holes as a processing object is introduced into a processing chamber,
In the narrow space between the side surface of the plate and the wall of the processing chamber, a high-speed processing liquid is flowed along one side of the plate from one end to the other to treat the inner surface of the small holes.
[First invention] Also, a pair of walls are made narrow and face each other, and a plate having a small hole as an object to be treated can be freely positioned between them, and a length of the plate is arranged between a side surface of the plate and a wall surface corresponding to this side surface. The present invention is equipped with a processing chamber that forms a narrow flow path for processing liquid corresponding to the processing temperature, and a nozzle chamber that supplies a uniform high-speed flow of processing liquid to the narrow flow path within the processing chamber. It is possible to efficiently apply plating, etching, anti-corrosion, and other intended surface treatments at high speed to both sides of a plate having small holes as the object to be treated, and to uniformly apply high-etching to the inner surfaces of multiple small holes in the plate. In addition to speedy and efficient surface treatment, by moving the plate through a rocking device, the surface treatment around the small hole can be made uniform, and for example, during copper plating processing, it is possible to make the surface treatment around the small hole uniform. Even if it is possible to prevent the ``sloppy phenomenon'' that is easy to occur, the effects that can be obtained are enormous.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示す縦型の装置の要部破断
の斜視図、 第2図、第3図及び第4図は各々第1図中の矢示1−1
線、同璽−璽線、同IV−IV線に沿う断面図、 第5図、第6図そして第7図は縦型の装置の他の実施例
を各々示す第2図相当の断面図、第8図は他の実施例を
示す横型の装置の要部破断の斜視図、 第9図、第10図そして第11図は第8図中の矢示[−
W線、X−X線及びXI−XI線に各々沿う断面図、そ
して 第12図は横型の装置の他の実施例を示す第9図相当の
断面図である。 1.30.50.67・・・ 処理室 1a、 soa    ・・・ 第1処理室1b%50
b    ・・・ 第2処理室2.3 28.壁 2a、3a  ・・・壁面 d       ・・・ 壁の幅狭な間隔4.5.53
.54  ・・・ アノード6.41.42   ・・
・ 整流器 7.55.56   ・・・ ガイド 8.5B     ・−・ 被処理物としてのプレート
9      ・・・ 搬送装置 !      ・・・ プレートの長さム      
・・・ 処理液 16.66     ・・・回収室
FIG. 1 is a perspective view of a main part of a vertical device showing an embodiment of the present invention, and FIGS. 2, 3, and 4 are respectively indicated by arrows 1-1 in FIG.
5, 6 and 7 are sectional views corresponding to FIG. 2 showing other embodiments of the vertical device, respectively; FIG. 8 is a perspective view of a broken main part of a horizontal device showing another embodiment, and FIGS. 9, 10, and 11 show arrows [--
12 is a sectional view corresponding to FIG. 9 showing another embodiment of the horizontal device. 1.30.50.67... Processing chamber 1a, soa... First processing chamber 1b%50
b ... Second processing chamber 2.3 28. Walls 2a, 3a... Wall surface d... Narrow spacing between walls 4.5.53
.. 54... Anode 6.41.42...
・ Rectifier 7.55.56 ... Guide 8.5B ... Plate 9 as the object to be processed ... Conveying device!・・・ Length of plate
... Processing liquid 16.66 ... Recovery chamber

Claims (6)

【特許請求の範囲】[Claims] (1)被処理物としての小孔を有するプレートを処理室
へ導ぎ、プレート側面と処理室の壁面との狭い間で、プ
レートの片側面に沿ってその一端より他端へかけ高速流
にした処理液を流して施し小孔内面をも表面処理するよ
うにした小孔を有するプレートの表面処理方法。
(1) A plate with small holes as an object to be processed is guided into a processing chamber, and a high-speed flow is applied along one side of the plate from one end to the other in a narrow space between the side surface of the plate and the wall of the processing chamber. A method for surface treatment of a plate having small holes, in which the inner surfaces of the small holes are also surface-treated by flowing a treatment liquid applied thereto.
(2)高速流にした処理液が、プレート側面のりずれか
の片側面に交互に流して施される特許請求の範囲第1項
記載の小孔を有するプレートの表面処理方法。
(2) A method for surface treatment of a plate having small holes as set forth in claim 1, wherein a high-speed treatment liquid is alternately flowed onto one side of the plate.
(3)一対の壁を幅狭罠して対峙せしめその間に被処理
物としての小孔を有するプレートを位置決め自在とし且
つプレートの側面及びこの側面に対応する壁面との間に
プレートの長さに見合う処理液の幅狭な流路を形成する
処理室と、 そしてこの処理室内の幅狭な流路に処理液の均一な高速
流を供給するノズル室とを備える小孔を有するプレート
の表面処理装置。
(3) A pair of narrow walls are made to face each other, and a plate having a small hole as an object to be processed can be freely positioned between them, and the length of the plate is set between a side surface of the plate and a wall surface corresponding to this side surface. Surface treatment of a plate having small holes, which includes a processing chamber that forms a narrow flow path for a corresponding processing liquid, and a nozzle chamber that supplies a uniform high-speed flow of the processing liquid to the narrow flow path within the processing chamber. Device.
(4)処理室はプレートの一方の片側面とこの片側面に
対応する壁面との間に処理液の幅狭な流路を形成する第
1処理室とそしてプレートの他方の片側面とこの片側面
に対応する壁面との間に処理液の幅狭な流路を形成する
第2処理室とを備えて−る特許請求の範囲第S項記載の
小孔を有するプレートの表面処理装置。
(4) The processing chamber includes a first processing chamber that forms a narrow flow path for the processing liquid between one side of the plate and a wall corresponding to this one side, and a first processing chamber that forms a narrow flow path for the processing liquid between one side of the plate and a wall corresponding to this one side. A surface treatment apparatus for a plate having small holes as set forth in claim S, comprising a second treatment chamber forming a narrow flow path for a treatment liquid between the second treatment chamber and a wall surface corresponding to the side surface.
(5)  処理室はプレートの両側面と各々対応する壁
面との間に処理液の幅狭な流路を形成し、双方の幅狭な
流路に、交互に、処理液の均一な高速流を導くための流
路切換装置を備えている特許請求の範囲第3項記載の小
孔を有するプレートの表面処理装置。
(5) The processing chamber forms narrow flow paths for the processing liquid between both sides of the plate and the corresponding wall surfaces, and a uniform high-speed flow of the processing liquid is alternately flowed into both narrow flow paths. 4. The surface treatment device for a plate having small holes according to claim 3, further comprising a flow path switching device for guiding the pores.
(6)  処理室は一対の壁面に各々アノードを備え且
つプレートをカソード化する手段を備えている特許請求
の範囲第5項乃至第5項のいずれかに記載の小孔を有す
るプレートの表面処理装置。
(6) Surface treatment of a plate having small holes according to any one of claims 5 to 5, wherein the processing chamber is provided with anodes on each of a pair of walls and means for making the plate a cathode. Device.
JP11557881A 1981-07-23 1981-07-23 Surface treatment method of plate having small hole and its device Pending JPS5817867A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11557881A JPS5817867A (en) 1981-07-23 1981-07-23 Surface treatment method of plate having small hole and its device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11557881A JPS5817867A (en) 1981-07-23 1981-07-23 Surface treatment method of plate having small hole and its device

Publications (1)

Publication Number Publication Date
JPS5817867A true JPS5817867A (en) 1983-02-02

Family

ID=14666044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11557881A Pending JPS5817867A (en) 1981-07-23 1981-07-23 Surface treatment method of plate having small hole and its device

Country Status (1)

Country Link
JP (1) JPS5817867A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0290591A (en) * 1988-09-28 1990-03-30 Hitachi Ltd Processing method of inside of hole
JPH02262397A (en) * 1989-04-03 1990-10-25 Kihei Otsu Electroplating of printed-wiring board and its device
JPH0596071U (en) * 1992-06-01 1993-12-27 上村工業株式会社 Water-saving water washing tank
EP1087844A1 (en) * 1998-05-13 2001-04-04 Tyco Printed Circuit Group, Inc. Apparatus and method for coating a multilayer article
JP2011256444A (en) * 2010-06-10 2011-12-22 Sumitomo Bakelite Co Ltd Substrate treating method and substrate treating apparatus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0290591A (en) * 1988-09-28 1990-03-30 Hitachi Ltd Processing method of inside of hole
JPH02262397A (en) * 1989-04-03 1990-10-25 Kihei Otsu Electroplating of printed-wiring board and its device
JPH0596071U (en) * 1992-06-01 1993-12-27 上村工業株式会社 Water-saving water washing tank
EP1087844A1 (en) * 1998-05-13 2001-04-04 Tyco Printed Circuit Group, Inc. Apparatus and method for coating a multilayer article
EP1087844A4 (en) * 1998-05-13 2006-10-11 Tyco Printed Circuit Group Inc Apparatus and method for coating a multilayer article
JP2011256444A (en) * 2010-06-10 2011-12-22 Sumitomo Bakelite Co Ltd Substrate treating method and substrate treating apparatus

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