JP2011244459A - Iii族窒化物系高電子移動度トランジスタを含む低雑音増幅器 - Google Patents
Iii族窒化物系高電子移動度トランジスタを含む低雑音増幅器 Download PDFInfo
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- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
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- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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Abstract
【解決手段】低雑音増幅器は、第一のIII族窒化物系トランジスタと、第一のIII族窒化物系トランジスタに結合された第二のIII族窒化物系トランジスタとを含んでいる。第一のIII族窒化物系トランジスタは、入力信号に対する第一増幅段を提供するように構成され、第二のIII族窒化物系トランジスタは、入力信号に対する第二増幅段を提供するように構成される。
【選択図】図1
Description
本出願は、2010年5月20日出願の米国仮特許出願第61/346,757号、発明の名称「窒化ガリウムの高電子移動度トランジスタを含む低雑音増幅器」の利益とそれに基づく優先権を主張し、その開示の全体は参照により本明細書に援用される。
本発明は、米国国防省により与えられた契約番号1138 05−D−6000の契約に基づき、米国政府の支援によりなされた。米国政府は、本発明に対して一定の権利を有する。
米国特許第6,849,882号公報、発明の名称「障壁/スペーサ層を有するIII族窒化物系高電子移動度トランジスタ(HEMT)」、2005年2月1日。
米国特許第7,230,284号、発明の名称「絶縁ゲートAlGaN/GaN・HEMT」、2007年6月12日。
米国公開第2007/0059873号公報、発明の名称「単一又は複数ゲートフィールド・プレートの製造」、2007年3月15日。
米国特許第7,550,783号公報、発明の名称「ソースに接続されたフィールド・プレートを有するワイド・バンドギャップHEMT」、2009年6月23日。
米国公開第2006/0202272号公報、発明の名称「ゲート−ソース・フィールド・プレートを有するワイド・バンドギャップ・トランジスタ」、2006年9月14日。
米国特許第7,501,669号公報、発明の名称「フィールド・プレートを有するワイド・バンドギャップ・トランジスタ・デバイス」、2009年3月10日。
米国特許第7,126,426号公報、発明の名称「フィールド・プレートを有するワイド・バンドギャップ電界効果トランジスタを含むカスケード増幅器の構造」、2006年10月24日。
米国特許第7,573,078号公報、発明の名称「複数のフィールド・プレートを有するワイド・バンドギャップ・トランジスタ」、2009年8月11日。
米国特許第6,316,793号公報、発明の名称「半絶縁炭化珪素基板上の窒化物系トランジスタ」、2001年11月13日。
米国特許第6,586,781号公報、発明の名称「トラッピング(trapping)の少ないIII族窒化物系FET及びHEMTとその製造方法」、2003年7月1日。
米国特許第6,548,333号公報、発明の名称「窒化ガリウム系キャップ・セグメント上にゲート・コンタクトを有する窒化アルミニウム・ガリウム/窒化ガリウムの高電子移動度トランジスタ」、2003年4月15日。
米国公開第2002/0167023号公報、発明の名称「障壁/スペーサ層を有するIII族窒化物系高電子移動度トランジスタ(HEMT)」、2002年11月14日。
米国公開第2003/00020092号公報、発明の名称「絶縁ゲートAlGaN/GaN・HEMT」、2003年1月30日。
12、120 基板
14 核形成層
16 バッファ層
18 障壁層
20 ソース電極
22 ドレイン電極
24 ゲート
26 2DEGチャネル層
28、42、62、72、76 スペーサ層
32、44、64、74、78 フィールド・プレート
100 モノリシック・マイクロ波集積回路
112 入力ネットワーク
114 段間ネットワーク
116 出力ネットワーク
Claims (18)
- 基板と、
増幅すべき入力信号を受信する基板上の入力ポートと
入力ポートに結合された基板上の第一のIII族窒化物系トランジスタであって、入力信号に対する第一増幅段を提供するように構成される第一のIII族窒化物系トランジスタと、
第一のIII族窒化物系トランジスタに結合された基板上の第二のIII族窒化物系トランジスタであって、入力信号に対する第二増幅段を提供するように構成される第二のIII族窒化物系トランジスタと、
第二のIII族窒化物系トランジスタに結合された基板上の出力ポートを含むモノリシック・マイクロ波集積回路の低雑音増幅器。 - 請求項1記載のモノリシック・マイクロ波集積回路の低雑音増幅器であって、第一及び第二のIII族窒化物系トランジスタは、III族窒化物系高電子移動度トランジスタを含むモノリシック・マイクロ波集積回路の低雑音増幅器。
- 請求項1記載のモノリシック・マイクロ波集積回路の低雑音増幅器であって、第一及び第二のIII族窒化物系トランジスタの少なくとも一つは、フィールド・プレートを含むモノリシック・マイクロ波集積回路の低雑音増幅器。
- 請求項3記載のモノリシック・マイクロ波集積回路の低雑音増幅器であって、前記フィールド・プレートは、前記少なくとも一つのトランジスタのソース端子に電気的に接続されるモノリシック・マイクロ波集積回路の低雑音増幅器。
- 請求項3記載のモノリシック・マイクロ波集積回路の低雑音増幅器であって、前記フィールド・プレートは、前記少なくとも一つのトランジスタのゲート端子に電気的に接続されるモノリシック・マイクロ波集積回路の低雑音増幅器。
- 請求項3記載のモノリシック・マイクロ波集積回路の低雑音増幅器であって、前記フィールド・プレートは、第一のフィールド・プレートを含み、前記少なくとも一つのトランジスタは、さらに、第一のフィールド・プレートから電気的に分離された第二のフィールド・プレートを含むモノリシック・マイクロ波集積回路の低雑音増幅器。
- 請求項6記載のモノリシック・マイクロ波集積回路の低雑音増幅器であって、第二のフィールド・プレートは、前記少なくとも一つのトランジスタのソース端子に電気的に接続されるモノリシック・マイクロ波集積回路の低雑音増幅器。
- 請求項1記載のモノリシック・マイクロ波集積回路の低雑音増幅器であって、さらに、
入力ポートと第一のIII族窒化物系トランジスタとの間に結合された入力ネットワークと、
第一のIII族窒化物系トランジスタと第二のIII族窒化物系トランジスタとの間に結合された段間ネットワークと、
第二のIII族窒化物系トランジスタと出力ポートとの間に結合された出力ネットワークと、
を含むモノリシック・マイクロ波集積回路の低雑音増幅器。 - 請求項1記載のモノリシック・マイクロ波集積回路の低雑音増幅器であって、さらに、
第一のIII族窒化物系トランジスタのゲートに結合された第一のゲート・バイアス・ポートと、
第一のIII族窒化物系トランジスタのドレインに結合された第一のドレイン・バイアス・ポートと、
第二のIII族窒化物系トランジスタのゲートに結合された第二のゲート・バイアス・ポートと、
第二のIII族窒化物系トランジスタのドレインに結合された第二のドレイン・バイアス・ポートと、
を含むモノリシック・マイクロ波集積回路の低雑音増幅器。 - 請求項1記載のモノリシック・マイクロ波集積回路の低雑音増幅器であって、
第一のIII族窒化物系トランジスタは、約1mm未満のゲート・ペリフェリを有し、第二のIII族窒化物系トランジスタは、約1mmより大きなゲート・ペリフェリを有するモノリシック・マイクロ波集積回路の低雑音増幅器。 - 請求項10記載のモノリシック・マイクロ波集積回路の低雑音増幅器であって、
第一のIII族窒化物系トランジスタは、約0.72mmのゲート・ペリフェリを有し、第二のIII族窒化物系トランジスタは、約1.2mmのゲート・ペリフェリを有するモノリシック・マイクロ波集積回路の低雑音増幅器。 - 請求項1記載のモノリシック・マイクロ波集積回路の低雑音増幅器を含むパッケージであって、パッケージは0.5平方インチ(3.23平方センチメートル)以下の設置面積を有するパッケージ。
- 2.6GHzから3.95GHzの範囲の周波数で、25dBmより大きい3次インターセプトを有するモノリシック・マイクロ波集積回路の低雑音増幅器。
- 2.6GHzから3.95GHzの範囲の周波数で、3.0dB未満の雑音指数を有するモノリシック・マイクロ波集積回路の低雑音増幅器。
- 入力信号に対する第一増幅段を提供するように構成された第一のIII族窒化物系トランジスタと、
第一のIII族窒化物系トランジスタに結合され、入力信号に対する第二増幅段を提供するように構成された第二のIII族窒化物系トランジスタと、
を含む低雑音増幅器。 - 請求項15記載の低雑音増幅器であって、第一及び第二のIII族窒化物系トランジスタは、III族窒化物系高電子移動度トランジスタを含む低雑音増幅器。
- 請求項15記載の低雑音増幅器であって、第一及び第二のIII族窒化物系トランジスタの少なくとも一つは、フィールド・プレートを含む低雑音増幅器。
- 請求項17記載の低雑音増幅器であって、前記フィールド・プレートは、第一のフィールド・プレートを含み、前記少なくとも一つのトランジスタは、さらに、第一のフィールド・プレートから電気的に分離された第二のフィールド・プレートを含む低雑音増幅器。
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