JP2011243616A - Iii族窒化物半導体発光素子の製造方法 - Google Patents
Iii族窒化物半導体発光素子の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 30
- 238000000347 anisotropic wet etching Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 abstract description 16
- 239000010410 layer Substances 0.000 description 192
- 239000007789 gas Substances 0.000 description 24
- 238000001312 dry etching Methods 0.000 description 7
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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Abstract
【解決手段】まず、基板101の一方の表面に、ノコギリ歯状ストライプの凹凸形状を形成する(図2(a))。次に、基板101のノコギリ歯状ストライプの凹凸形状が形成された側の表面上に、減圧MOCVD法によって、その凹凸形状に沿って、n型層102、発光層103、p型層104を順に積層させる。これにより、各層が凹凸形状に沿ってうねったノコギリ歯状ストライプの形状となるよう形成する(図2(b))。ここで、ガス流方向は、凹凸形状のストライプ方向に平行な方向とした。これにより、発光層103の面内膜厚分布、組成分布を均一にすることができる。
【選択図】図2
Description
102、202:n型層
103、203:発光層
104、204:p型層
105、205:n電極
106、206:p電極
107、207:透明電極
208:マスク
Claims (7)
- III 族窒化物半導体からなるn型層表面にストライプ状の凹凸形状を有し、その凹凸形状を有するn型層表面上に、前記凹凸形状に沿ってうねった形状のIII 族窒化物半導体からなる発光層をMOCVD法によって形成するIII 族窒化物半導体発光素子の製造方法において、
発光層は、原料ガスをストライプ方向に平行な方向に流しながら形成する、
ことを特徴とするIII 族窒化物半導体発光素子の製造方法。 - 前記MOCVD法は、減圧MOCVD法である、ことを特徴とする請求項1に記載のIII 族窒化物半導体発光素子の製造方法。
- 前記凹凸形状は、ストライプ方向に垂直な方向における断面がノコギリ歯状である、ことを特徴とする請求項1または請求項2に記載のIII 族窒化物半導体発光素子の製造方法。
- 前記ノコギリ歯状を構成する面は、すべて(11−22)面である、ことを特徴とする請求項3に記載のIII 族窒化物半導体発光素子の製造方法。
- 前記n型層は、ストライプ状の凹凸形状を有した基板上に、その凹凸形状に沿ってうねった形状に形成する、ことを特徴とする請求項1ないし請求項4のいずれか1項に記載のIII 族窒化物半導体発光素子の製造方法。
- 前記基板はSi基板であり、
そのSi基板表面にストライプ状のマスクを形成し、その後、Si基板表面を異方性ウェットエッチングすることで前記凹凸形状を形成する、ことを特徴とする請求項5に記載のIII 族窒化物半導体発光素子の製造方法。 - 前記n型層は、第1のn型層と第2のn型層で構成され、
基板上に前記第1のn型層を形成し、その第1のn型層上にストライプ状のマスクを形成し、その後、前記第1のn型層上に前記マスクを用いて前記第2のn型層を選択成長させることで、表面に前記凹凸形状を有する前記第2のn型層を形成する、ことを特徴とする請求項1ないし請求項4のいずれか1項に記載のIII 族窒化物半導体発光素子の製造方法。
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JP2010111947A JP5229270B2 (ja) | 2010-05-14 | 2010-05-14 | Iii族窒化物半導体発光素子の製造方法 |
US13/067,142 US8389304B2 (en) | 2010-05-14 | 2011-05-11 | Method for producing group III nitride semiconductor light-emitting device |
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JP2010111947A JP5229270B2 (ja) | 2010-05-14 | 2010-05-14 | Iii族窒化物半導体発光素子の製造方法 |
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JP2011243616A true JP2011243616A (ja) | 2011-12-01 |
JP5229270B2 JP5229270B2 (ja) | 2013-07-03 |
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JP (1) | JP5229270B2 (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013118378A (ja) * | 2011-12-03 | 2013-06-13 | Qinghua Univ | 発光ダイオード |
JP2013118379A (ja) * | 2011-12-03 | 2013-06-13 | Qinghua Univ | 発光ダイオード |
JP2013118380A (ja) * | 2011-12-03 | 2013-06-13 | Qinghua Univ | 発光ダイオード |
JP2013232478A (ja) * | 2012-04-27 | 2013-11-14 | Toshiba Corp | 半導体発光装置及びその製造方法 |
JP2014060198A (ja) * | 2012-09-14 | 2014-04-03 | Oki Electric Ind Co Ltd | 窒化物半導体発光ダイオードの製造方法、及び窒化物半導体発光ダイオード |
US8759858B2 (en) | 2011-12-03 | 2014-06-24 | Tsinghua University | Light emitting diode |
US8785955B2 (en) | 2011-12-03 | 2014-07-22 | Tsinghua University | Light emitting diode |
US8796716B2 (en) | 2011-12-03 | 2014-08-05 | Tsinghua University | Light emitting diode |
JP2016167540A (ja) * | 2015-03-10 | 2016-09-15 | シチズンホールディングス株式会社 | 発光モジュール |
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JP5533791B2 (ja) * | 2011-06-20 | 2014-06-25 | 豊田合成株式会社 | Iii族窒化物半導体発光素子の製造方法 |
CN103137804B (zh) * | 2011-12-03 | 2015-09-30 | 清华大学 | 发光二极管 |
CN103137803B (zh) | 2011-12-03 | 2015-08-26 | 清华大学 | 发光二极管 |
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JP6785455B2 (ja) * | 2018-05-11 | 2020-11-18 | パナソニックIpマネジメント株式会社 | 発光ダイオード素子、及び発光ダイオード素子の製造方法 |
CN110571311B (zh) * | 2019-07-30 | 2021-12-14 | 中国科学技术大学 | 一种多量子阱结构、光电器件外延片及光电器件 |
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- 2010-05-14 JP JP2010111947A patent/JP5229270B2/ja not_active Expired - Fee Related
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- 2011-05-11 US US13/067,142 patent/US8389304B2/en not_active Expired - Fee Related
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JPH11340153A (ja) * | 1998-05-28 | 1999-12-10 | Toyoda Gosei Co Ltd | 化合物半導体の気相成長装置 |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013118378A (ja) * | 2011-12-03 | 2013-06-13 | Qinghua Univ | 発光ダイオード |
JP2013118379A (ja) * | 2011-12-03 | 2013-06-13 | Qinghua Univ | 発光ダイオード |
JP2013118380A (ja) * | 2011-12-03 | 2013-06-13 | Qinghua Univ | 発光ダイオード |
US8759858B2 (en) | 2011-12-03 | 2014-06-24 | Tsinghua University | Light emitting diode |
US8785955B2 (en) | 2011-12-03 | 2014-07-22 | Tsinghua University | Light emitting diode |
US8796716B2 (en) | 2011-12-03 | 2014-08-05 | Tsinghua University | Light emitting diode |
JP2013232478A (ja) * | 2012-04-27 | 2013-11-14 | Toshiba Corp | 半導体発光装置及びその製造方法 |
JP2014060198A (ja) * | 2012-09-14 | 2014-04-03 | Oki Electric Ind Co Ltd | 窒化物半導体発光ダイオードの製造方法、及び窒化物半導体発光ダイオード |
JP2016167540A (ja) * | 2015-03-10 | 2016-09-15 | シチズンホールディングス株式会社 | 発光モジュール |
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