JPWO2013021464A1 - 窒化物半導体紫外線発光素子 - Google Patents
窒化物半導体紫外線発光素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 32
- 238000005253 cladding Methods 0.000 claims abstract description 77
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 27
- 239000010980 sapphire Substances 0.000 claims abstract description 27
- 239000013078 crystal Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 189
- 238000009826 distribution Methods 0.000 description 48
- 238000005259 measurement Methods 0.000 description 22
- 230000000052 comparative effect Effects 0.000 description 16
- 230000007423 decrease Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000005204 segregation Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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Abstract
Description
2: サファイア(0001)基板
3: AlN層
4: AlGaN層
5: テンプレート(下地構造部)
6: n型クラッド層(n型AlGaN)
7: 活性層
7a: バリア層
7b: 井戸層
8: 電子ブロック層(p型AlGaN)
9: p型クラッド層(p型AlGaN)
10: pコンタクト層(p型GaN)
11: 発光素子構造部
12: p電極
13: n電極
R1: 第1領域
R2: 第2領域
S: 段差
T: テラス面
Claims (4)
- サファイア(0001)基板と、前記基板の(0001)面上に形成されたAlN層を含む下地構造部、及び、
前記下地構造部の結晶表面上に形成された、n型AlGaN系半導体層のn型クラッド層と、AlGaN系半導体層を有する活性層と、p型AlGaN系半導体層のp型クラッド層を含む発光素子構造部を備えてなり、
前記基板の(0001)面が0.6°以上3.0°以下のオフ角で傾斜し、
前記n型クラッド層のAlNモル分率が50%以上であることを特徴とする窒化物半導体紫外線発光素子。 - 前記オフ角が1.0°以上2.5°以下であることを特徴とする請求項1に記載の窒化物半導体紫外線発光素子。
- ピーク発光波長が300nm以下であることを特徴とする請求項1または2に記載の窒化物半導体紫外線発光素子。
- 前記下地構造部の前記基板上に形成される前記AlN層の膜厚が、2.2μm以上6.6μm以下であることを特徴とする請求項1〜3の何れか1項に記載の窒化物半導体紫外線発光素子。
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PCT/JP2011/068165 WO2013021464A1 (ja) | 2011-08-09 | 2011-08-09 | 窒化物半導体紫外線発光素子 |
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JPWO2013021464A1 true JPWO2013021464A1 (ja) | 2015-03-05 |
JP5881222B2 JP5881222B2 (ja) | 2016-03-09 |
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US (2) | US9356192B2 (ja) |
EP (1) | EP2747220B1 (ja) |
JP (1) | JP5881222B2 (ja) |
KR (3) | KR101859355B1 (ja) |
CN (1) | CN103733449B (ja) |
RU (1) | RU2561761C1 (ja) |
TW (1) | TWI529961B (ja) |
WO (1) | WO2013021464A1 (ja) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5881222B2 (ja) | 2011-08-09 | 2016-03-09 | 創光科学株式会社 | 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光素子の製造方法 |
US9653313B2 (en) | 2013-05-01 | 2017-05-16 | Sensor Electronic Technology, Inc. | Stress relieving semiconductor layer |
US10032956B2 (en) | 2011-09-06 | 2018-07-24 | Sensor Electronic Technology, Inc. | Patterned substrate design for layer growth |
US10460952B2 (en) | 2013-05-01 | 2019-10-29 | Sensor Electronic Technology, Inc. | Stress relieving semiconductor layer |
US9412911B2 (en) | 2013-07-09 | 2016-08-09 | The Silanna Group Pty Ltd | Optical tuning of light emitting semiconductor junctions |
CN106663718B (zh) | 2014-05-27 | 2019-10-01 | 斯兰纳Uv科技有限公司 | 光电装置 |
JP6986349B2 (ja) | 2014-05-27 | 2021-12-22 | シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドSilanna Uv Technologies Pte Ltd | n型超格子及びp型超格子を備える電子デバイス |
US11322643B2 (en) | 2014-05-27 | 2022-05-03 | Silanna UV Technologies Pte Ltd | Optoelectronic device |
JP6636459B2 (ja) | 2014-05-27 | 2020-01-29 | シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドSilanna Uv Technologies Pte Ltd | 半導体構造と超格子とを用いた高度電子デバイス |
JP6916426B2 (ja) * | 2014-09-02 | 2021-08-11 | 株式会社Flosfia | 積層構造体およびその製造方法、半導体装置ならびに結晶膜 |
JP6331204B2 (ja) * | 2014-10-22 | 2018-05-30 | パナソニックIpマネジメント株式会社 | 半導体デバイス及び紫外線発光素子 |
JP5985782B1 (ja) * | 2015-04-03 | 2016-09-06 | 創光科学株式会社 | 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光装置 |
KR101995152B1 (ko) | 2015-07-21 | 2019-07-02 | 소코 가가쿠 가부시키가이샤 | 질화물 반도체 자외선 발광 소자 |
US10361346B2 (en) * | 2015-10-27 | 2019-07-23 | Soko Kagaku Co., Ltd. | Nitride semiconductor ultraviolet light emitting device and method for manufacturing same |
US10418517B2 (en) | 2016-02-23 | 2019-09-17 | Silanna UV Technologies Pte Ltd | Resonant optical cavity light emitting device |
WO2017145026A1 (en) | 2016-02-23 | 2017-08-31 | Silanna UV Technologies Pte Ltd | Resonant optical cavity light emitting device |
US10121932B1 (en) * | 2016-11-30 | 2018-11-06 | The United States Of America As Represented By The Secretary Of The Navy | Tunable graphene light-emitting device |
RU2719339C1 (ru) * | 2017-02-15 | 2020-04-17 | Соко Кагаку Ко., Лтд. | Способ изготовления нитридного полупроводникового излучающего ультрафиолетовое излучение элемента и нитридный полупроводниковый излучающий ультрафиолетовое излучение элемент |
RU2702948C1 (ru) * | 2017-05-26 | 2019-10-14 | Соко Кагаку Ко., Лтд. | Основание, нитридный полупроводниковый излучающий ультрафиолетовое излучение элемент и способ производства основания |
DE102017113383B4 (de) * | 2017-06-19 | 2023-03-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
JP6998146B2 (ja) * | 2017-08-03 | 2022-01-18 | 旭化成株式会社 | 紫外線発光素子及び紫外線照射モジュール |
JP6649324B2 (ja) * | 2017-08-09 | 2020-02-19 | 創光科学株式会社 | 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光素子の製造方法 |
CN111373552B (zh) * | 2017-11-22 | 2023-09-05 | 日机装株式会社 | 氮化物半导体发光元件 |
JP6727186B2 (ja) * | 2017-12-28 | 2020-07-22 | 日機装株式会社 | 窒化物半導体素子の製造方法 |
US11217726B2 (en) * | 2018-02-14 | 2022-01-04 | Soko Kagaku Co., Ltd. | Nitride semiconductor ultraviolet light-emitting element |
JP7246038B2 (ja) * | 2018-09-14 | 2023-03-27 | 旭化成株式会社 | 窒化物半導体レーザダイオード |
US10622514B1 (en) | 2018-10-15 | 2020-04-14 | Silanna UV Technologies Pte Ltd | Resonant optical cavity light emitting device |
US20230299232A1 (en) * | 2020-07-07 | 2023-09-21 | Soko Kagaku Co., Ltd. | Nitride Semiconductor Ultraviolet Light-Emitting Element and Manufacturing Method Thereof |
JP7245214B2 (ja) | 2020-11-20 | 2023-03-23 | 日機装株式会社 | 窒化物半導体発光素子の製造方法 |
JP7405902B2 (ja) | 2022-05-20 | 2023-12-26 | 日機装株式会社 | 窒化物半導体発光素子 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0923026A (ja) * | 1995-07-06 | 1997-01-21 | Sumitomo Chem Co Ltd | 3−5族化合物半導体発光素子 |
JP2006060164A (ja) * | 2004-08-24 | 2006-03-02 | National Institute Of Advanced Industrial & Technology | 窒化物半導体デバイスおよび窒化物半導体結晶成長方法 |
JP2009054780A (ja) * | 2007-08-27 | 2009-03-12 | Institute Of Physical & Chemical Research | 光半導体素子及びその製造方法 |
JP2009147271A (ja) * | 2007-12-18 | 2009-07-02 | Tohoku Univ | 基板製造方法およびiii族窒化物半導体結晶 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW418549B (en) * | 1998-06-26 | 2001-01-11 | Sharp Kk | Crystal growth method for nitride semiconductor, nitride semiconductor light emitting device, and method for producing the same |
JP3669848B2 (ja) | 1998-09-16 | 2005-07-13 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
JP3561644B2 (ja) | 1998-11-18 | 2004-09-02 | 東京エレクトロン株式会社 | 液処理システム及び液処理方法 |
JP4691631B2 (ja) | 1999-11-29 | 2011-06-01 | 並木精密宝石株式会社 | サファイヤ基板 |
JP2002176198A (ja) * | 2000-12-11 | 2002-06-21 | Mitsubishi Cable Ind Ltd | 多波長発光素子 |
JP4276020B2 (ja) * | 2003-08-01 | 2009-06-10 | 豊田合成株式会社 | Iii族窒化物系化合物半導体の製造方法 |
US7385226B2 (en) * | 2004-03-24 | 2008-06-10 | Epistar Corporation | Light-emitting device |
RU2262155C1 (ru) * | 2004-09-14 | 2005-10-10 | Закрытое акционерное общество "Нитридные источники света" | Полупроводниковый элемент, излучающий свет в ультрафиолетовом диапазоне |
GB2421333B (en) * | 2004-12-17 | 2007-08-01 | Motorola Inc | An alert management apparatus and a method of alert management therefor |
US7812366B1 (en) * | 2005-03-18 | 2010-10-12 | The United States Of America As Represented By The Secretary Of The Army | Ultraviolet light emitting AlGaN composition, and ultraviolet light emitting device containing same |
WO2008010541A1 (fr) * | 2006-07-19 | 2008-01-24 | Ngk Insulators, Ltd. | Procédé de réduction de dislocation dans un cristal de nitrure de groupe iii et substrat pour croissance épitaxiale |
JP2010510655A (ja) | 2006-11-15 | 2010-04-02 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | N面GaN、InNおよびAlNならびにそれらの合金を用いた発光ダイオードおよびレーザダイオード |
US8193020B2 (en) | 2006-11-15 | 2012-06-05 | The Regents Of The University Of California | Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition |
TWI450414B (zh) | 2007-10-10 | 2014-08-21 | Rohm Co Ltd | Nitride semiconductor device |
KR20090073935A (ko) * | 2007-12-31 | 2009-07-03 | 주식회사 에피밸리 | 3족 질화물 반도체 발광소자 |
JP2010040867A (ja) * | 2008-08-06 | 2010-02-18 | Showa Denko Kk | Iii族窒化物半導体積層構造体およびその製造方法 |
JP5261313B2 (ja) * | 2009-07-31 | 2013-08-14 | シャープ株式会社 | 窒化物半導体ウェハ、窒化物半導体素子および窒化物半導体素子の製造方法 |
KR101173072B1 (ko) | 2009-08-27 | 2012-08-13 | 한국산업기술대학교산학협력단 | 경사진 기판 상의 고품질 비극성/반극성 반도체 소자 및 그 제조 방법 |
JP5319628B2 (ja) * | 2010-08-26 | 2013-10-16 | シャープ株式会社 | 窒化物半導体素子および半導体光学装置 |
JP5881222B2 (ja) | 2011-08-09 | 2016-03-09 | 創光科学株式会社 | 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光素子の製造方法 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0923026A (ja) * | 1995-07-06 | 1997-01-21 | Sumitomo Chem Co Ltd | 3−5族化合物半導体発光素子 |
JP2006060164A (ja) * | 2004-08-24 | 2006-03-02 | National Institute Of Advanced Industrial & Technology | 窒化物半導体デバイスおよび窒化物半導体結晶成長方法 |
JP2009054780A (ja) * | 2007-08-27 | 2009-03-12 | Institute Of Physical & Chemical Research | 光半導体素子及びその製造方法 |
JP2009147271A (ja) * | 2007-12-18 | 2009-07-02 | Tohoku Univ | 基板製造方法およびiii族窒化物半導体結晶 |
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TW201308656A (zh) | 2013-02-16 |
EP2747220B1 (en) | 2016-11-30 |
RU2561761C1 (ru) | 2015-09-10 |
US9502606B2 (en) | 2016-11-22 |
JP5881222B2 (ja) | 2016-03-09 |
CN103733449B (zh) | 2016-05-11 |
WO2013021464A1 (ja) | 2013-02-14 |
KR101859355B1 (ko) | 2018-05-18 |
US20160240727A1 (en) | 2016-08-18 |
US9356192B2 (en) | 2016-05-31 |
KR20170021893A (ko) | 2017-02-28 |
KR20180031822A (ko) | 2018-03-28 |
TWI529961B (zh) | 2016-04-11 |
KR101855053B1 (ko) | 2018-05-04 |
US20140158983A1 (en) | 2014-06-12 |
EP2747220A4 (en) | 2015-07-08 |
EP2747220A1 (en) | 2014-06-25 |
CN103733449A (zh) | 2014-04-16 |
KR20140043161A (ko) | 2014-04-08 |
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