JP2011241396A5 - - Google Patents

Download PDF

Info

Publication number
JP2011241396A5
JP2011241396A5 JP2011108913A JP2011108913A JP2011241396A5 JP 2011241396 A5 JP2011241396 A5 JP 2011241396A5 JP 2011108913 A JP2011108913 A JP 2011108913A JP 2011108913 A JP2011108913 A JP 2011108913A JP 2011241396 A5 JP2011241396 A5 JP 2011241396A5
Authority
JP
Japan
Prior art keywords
group
selenium
complex
ink
carboxylic acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011108913A
Other languages
English (en)
Japanese (ja)
Other versions
JP5702664B2 (ja
JP2011241396A (ja
Filing date
Publication date
Priority claimed from US12/782,032 external-priority patent/US8709917B2/en
Application filed filed Critical
Publication of JP2011241396A publication Critical patent/JP2011241396A/ja
Publication of JP2011241396A5 publication Critical patent/JP2011241396A5/ja
Application granted granted Critical
Publication of JP5702664B2 publication Critical patent/JP5702664B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2011108913A 2010-05-18 2011-05-15 セレン/第3a族インク、並びにその製造方法および使用方法 Expired - Fee Related JP5702664B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/782,032 US8709917B2 (en) 2010-05-18 2010-05-18 Selenium/group 3A ink and methods of making and using same
US12/782032 2010-05-18

Publications (3)

Publication Number Publication Date
JP2011241396A JP2011241396A (ja) 2011-12-01
JP2011241396A5 true JP2011241396A5 (enExample) 2014-07-03
JP5702664B2 JP5702664B2 (ja) 2015-04-15

Family

ID=44359483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011108913A Expired - Fee Related JP5702664B2 (ja) 2010-05-18 2011-05-15 セレン/第3a族インク、並びにその製造方法および使用方法

Country Status (6)

Country Link
US (1) US8709917B2 (enExample)
EP (1) EP2388300B1 (enExample)
JP (1) JP5702664B2 (enExample)
KR (1) KR101840311B1 (enExample)
CN (1) CN102344713A (enExample)
TW (1) TWI478988B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
US9142408B2 (en) 2010-08-16 2015-09-22 Alliance For Sustainable Energy, Llc Liquid precursor for deposition of indium selenide and method of preparing the same
KR20130143031A (ko) 2010-09-15 2013-12-30 프리커서 에너제틱스, 인코퍼레이티드. 광기전체를 위한 어닐링 방법
US8282995B2 (en) * 2010-09-30 2012-10-09 Rohm And Haas Electronic Materials Llc Selenium/group 1b/group 3a ink and methods of making and using same
US8343267B2 (en) * 2011-02-18 2013-01-01 Rohm And Haas Electronic Materials Llc Gallium formulated ink and methods of making and using same
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
KR101508133B1 (ko) * 2012-12-24 2015-04-06 한국에너지기술연구원 Ci(g)s 박막과 그 제조 방법, 및 이를 이용한 ci(g)s 태양전지와 그 제조 방법.
KR101508132B1 (ko) * 2012-12-24 2015-04-06 한국에너지기술연구원 Ci(g)s 박막과 그 제조 방법, 및 이를 이용한 ci(g)s 태양전지와 그 제조 방법.

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993004212A1 (en) 1991-08-26 1993-03-04 Eastman Kodak Company Preparation of group iii element-group vi element compound films
GB9315771D0 (en) 1993-07-30 1993-09-15 Epichem Ltd Method of depositing thin metal films
US6126740A (en) 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
JPH09148602A (ja) * 1995-11-17 1997-06-06 Yazaki Corp Cis型太陽電池及びその製造方法
GB9711799D0 (en) 1997-06-07 1997-08-06 Vecht Aron Preparation of sulphides and selenides
JP4266542B2 (ja) * 2001-08-31 2009-05-20 オリヱント化学工業株式会社 青色発光性インキ組成物
US7524528B2 (en) 2001-10-05 2009-04-28 Cabot Corporation Precursor compositions and methods for the deposition of passive electrical components on a substrate
US6875661B2 (en) 2003-07-10 2005-04-05 International Business Machines Corporation Solution deposition of chalcogenide films
JPWO2005035823A1 (ja) * 2003-10-14 2006-12-21 宇部興産株式会社 β−ジケトナト配位子を有する金属錯体および金属含有薄膜の製造方法
US7663057B2 (en) 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
EP1992010A2 (en) * 2006-02-23 2008-11-19 Van Duren, Jeroen K.J. High-throughput printing of chalcogen layer and the use of an inter-metallic material
JP5126654B2 (ja) * 2006-04-20 2013-01-23 住友金属鉱山株式会社 透明導電膜形成用ネガ型感光性塗布液及び透明導電パターン膜とその製造方法
US7494841B2 (en) 2006-05-12 2009-02-24 International Business Machines Corporation Solution-based deposition process for metal chalcogenides
EP2101931B1 (en) 2006-11-09 2015-05-13 Alliance for Sustainable Energy, LLC Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films
US8057850B2 (en) * 2006-11-09 2011-11-15 Alliance For Sustainable Energy, Llc Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors
WO2008095146A2 (en) 2007-01-31 2008-08-07 Van Duren Jeroen K J Solar cell absorber layer formed from metal ion precursors
KR101030780B1 (ko) * 2007-11-14 2011-04-27 성균관대학교산학협력단 Ⅰ-ⅲ-ⅵ2 나노입자의 제조방법 및 다결정 광흡수층박막의 제조방법
US20090260670A1 (en) * 2008-04-18 2009-10-22 Xiao-Chang Charles Li Precursor ink for producing IB-IIIA-VIA semiconductors
US8308973B2 (en) * 2009-07-27 2012-11-13 Rohm And Haas Electronic Materials Llc Dichalcogenide selenium ink and methods of making and using same
US8309179B2 (en) * 2009-09-28 2012-11-13 Rohm And Haas Electronics Materials Llc Selenium/group 1b ink and methods of making and using same

Similar Documents

Publication Publication Date Title
JP2011241396A5 (enExample)
Sun et al. Novel non-hydrazine solution processing of earth-abundant Cu 2 ZnSn (S, Se) 4 absorbers for thin-film solar cells
JP5523219B2 (ja) セレン/第1b族インク、並びにその製造方法および使用方法
TWI432532B (zh) 硒油墨及其製造及使用方法
US9196767B2 (en) Preparation of copper selenide nanoparticles
JP2012527523A (ja) 銅スズ硫化物および銅亜鉛スズ硫化物インク組成物
JP5702664B2 (ja) セレン/第3a族インク、並びにその製造方法および使用方法
WO2013172949A1 (en) Dispersible metal chalcogenide nanoparticles
JP5702665B2 (ja) 第6a族/第3a族インク、並びにその製造方法および使用方法
JP2018140934A (ja) ナトリウム又はアンチモンがドープされたナノ粒子
Cho et al. Growth and optical band gap of CdAl-layered double hydroxide thin structures on rigid substrate
KR101485522B1 (ko) 아미노싸이올레이트를 이용한 몰리브데넘 전구체, 이의 제조방법, 및 이를 이용하여 박막을 형성하는 방법
US9142408B2 (en) Liquid precursor for deposition of indium selenide and method of preparing the same
Toyonaga et al. Preparation and characterization of Cu2Six Sn1‐xS3
KR101311030B1 (ko) Czts 박막용 하이브리드 잉크
TWI676595B (zh) 製造石墨碳片之方法
TW202444870A (zh) 用於生產無鉛奈米晶體之方法
Fard et al. Synthesis and structural characterization of a new 2-D lead (II) supramolecule: A new precursor for preparation PbO nanoparticles via thermal decomposition
CN103214029A (zh) 纤维锌矿CuInS2纳米盘的制备方法
JP6373373B2 (ja) インジウムアルコキシド化合物を製造するための方法、当該方法に従って製造可能なインジウムアルコキシド化合物及び当該化合物の使用
Pasquarelli et al. Solution Synthesis and Characterization of Indium− Zinc Formate Precursors for Transparent Conducting Oxides
KR20230082832A (ko) 신규한 유기주석 화합물, 이의 제조방법 및 이를 이용하여 박막을 제조하는 방법
KR100965270B1 (ko) 새로운 전자 주개 리간드를 가지는 갈륨 착화합물 및 이의제조방법
KR101505126B1 (ko) 텅스텐 화합물, 이의 제조 방법 및 이를 이용하여 박막을 형성하는 방법
Lee et al. Preparation of In 2 Se 3 Thin Films by MOCVD with a New In-Se Single Source Precursor