JP2011238952A - Cmp生成物 - Google Patents
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- JP2011238952A JP2011238952A JP2011152232A JP2011152232A JP2011238952A JP 2011238952 A JP2011238952 A JP 2011238952A JP 2011152232 A JP2011152232 A JP 2011152232A JP 2011152232 A JP2011152232 A JP 2011152232A JP 2011238952 A JP2011238952 A JP 2011238952A
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 147
- 239000002245 particle Substances 0.000 claims abstract description 99
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 89
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 34
- 239000011164 primary particle Substances 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000000843 powder Substances 0.000 claims description 36
- 239000002002 slurry Substances 0.000 claims description 24
- 238000000576 coating method Methods 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000005498 polishing Methods 0.000 claims description 12
- 239000006185 dispersion Substances 0.000 claims description 7
- 239000012811 non-conductive material Substances 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 2
- 239000006061 abrasive grain Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 22
- 239000000463 material Substances 0.000 description 29
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 25
- 229910001593 boehmite Inorganic materials 0.000 description 24
- 239000000047 product Substances 0.000 description 20
- 238000006243 chemical reaction Methods 0.000 description 14
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 12
- 239000000499 gel Substances 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 10
- 238000001354 calcination Methods 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 238000010304 firing Methods 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 239000003082 abrasive agent Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 238000000227 grinding Methods 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000003801 milling Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 4
- 239000012964 benzotriazole Substances 0.000 description 4
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 4
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 4
- 229910052863 mullite Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910000323 aluminium silicate Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000007496 glass forming Methods 0.000 description 2
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- 239000013081 microcrystal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000001238 wet grinding Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 206010053759 Growth retardation Diseases 0.000 description 1
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- -1 alkali metal aluminosilicate Chemical class 0.000 description 1
- 229910052910 alkali metal silicate Inorganic materials 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 235000012255 calcium oxide Nutrition 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229960004643 cupric oxide Drugs 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000009837 dry grinding Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000004677 hydrates Chemical class 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000010335 hydrothermal treatment Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052914 metal silicate Inorganic materials 0.000 description 1
- 238000007431 microscopic evaluation Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 description 1
- 239000001230 potassium iodate Substances 0.000 description 1
- 235000006666 potassium iodate Nutrition 0.000 description 1
- 229940093930 potassium iodate Drugs 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004347 surface barrier Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F7/00—Compounds of aluminium
- C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
- C01F7/44—Dehydration of aluminium oxide or hydroxide, i.e. all conversions of one form into another involving a loss of water
- C01F7/441—Dehydration of aluminium oxide or hydroxide, i.e. all conversions of one form into another involving a loss of water by calcination
- C01F7/442—Dehydration of aluminium oxide or hydroxide, i.e. all conversions of one form into another involving a loss of water by calcination in presence of a calcination additive
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
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- C09K3/1436—Composite particles, e.g. coated particles
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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Abstract
【解決手段】粒子表面にシリカコーティングを有し、粒子の少なくとも90%の一次粒子幅が50nm以下で、10%未満の一次粒子幅が100nm超で、かつBET表面積が少なくとも50m2/gであり、さらにα−アルミナ含有率が90重量%のアルミナ粒子を使用したCMP生成物を用いて基板をCMPする。
【選択図】なし
Description
ナノα−アルミナ粒子を作ることができる適当な方法は、材料、特にシリカをベーマイトゲル中に分散させることを含むことができる。この材料は、ベーマイトがα−アルミナに転化するよりも低い温度でベーマイト粒子の周囲にバリアーを作ることができる。この材料は、ベーマイトからα−アルミナを形成した後で、粒度の成長を抑制するのに十分な量で導入し、アルミナの少なくとも大部分を約20〜約50nmの粒度の一次粒子のゆるい凝集体の形のα相に転化させる温度で、ゲルを乾燥及び焼成する。
本発明の1つの態様は、CMPプロセスで有益なナノアルミナのスラリー、及びナノアルミナ研磨粉末を使用するCMPプロセスを意図している。
最近では、従来のスラリー/パッドの組み合わせを固定研磨材で置き換えるようになってきている。ここでは研磨材は、容易に摩滅するバリアーマトリックス中に保持された研磨材粒子の複合体の形である。この複合体は、例えば研磨砥石の研磨表面を提供することができる。またこれは、可撓性基体に堆積又は付着した層の形であって、ここに例えばエンボス処理又は成形処理によって、規則的なパターンを提供することができる。後者は「加工」研磨材として言及されることがある。固定研磨材は、従来のCMPプロセスのパッドのように用いて、処理する表面に対して動かす。しかしながら表面に提供される液体は、スラリーではなく脱イオン水又は水性の酸化性溶液である。CMPの語が意味する操作を使用すること、及び結果も同じであることも、また事実である。しかしながらそのようなプロセスは、研磨材の使用及び廃棄物の処理又は取り扱いの容易さに関して、潜在的にかなり効果的である。
半導体部品の製造においては、通常、シリコンウェハー基体に、異なる導電体及び非導電体材料の複数の層を堆積させる。堆積させたままだと、これらの層はしばしば不均一であり、「平坦化」を行って、可能な限りRa値(表面粗さの測定値)が小さい表面を得ることが必要な場合がある。
本発明のCMPスラリーを、上述の方法を使用して作った試料で銅及び酸化物の除去に関して、2つの商業的なアルミナスラリーと比較して評価した。
例1で評価したのと同じ3つのアルミナを、上述の様式でのディッシングに関して評価した。試験様式は厳密に例1で説明されているようなものであった。但し、試験した材料は上述の積層生成物であり、終点は金属と絶縁性酸化物材料の両方が初めて観察される点であった。「ディッシング」の測定は、Tencor社から入手したプロフィロメーターを使用して行った。測定は、5〜45μmの様々な高さの隣接する構造の間のディッシングの深さを測定することからなっていた。それぞれの試料でのディッシングの深さを平均した。得られた結果は以下のようなものである:
比較−2 200Å(2.0×10−8m)
本発明−1 120Å(1.2×10−8m)
この例では、例1で評価した生成物をCMPスラリー中で評価した。ここではスラリーは、2,000gの脱イオン水に溶解した97gの硝酸鉄(III)及び0.5gのベンゾトリアゾールを含有していた。この溶液に、脱イオン水中の2,000gの10%アルミナ分散体を加えた。アルミナは下記のものであった。
Claims (8)
- アルミナ粉末を含む研磨材を使用して金属及び非導電性材料を有する基体を研磨することを含むCMP方法であって、前記アルミナ粉末の粒子がシリカコーティングを有し、前記粉末は、BET表面積が少なくとも50m2/gであり、アルミナ含有率が少なくとも90重量%であり、且つα−アルミナ含有率が少なくとも90重量%であり、またここで前記アルミナ粒子の少なくとも90%の一次粒子幅が50nm以下であり、前記アルミナ粒子の10%未満の一次粒子サイズが100nm超である、CMP方法。
- 前記アルミナ粉末のα−アルミナ含有率が少なくとも95重量%である、請求項1に記載のCMP方法。
- 前記アルミナ研磨材のシリカ含有率が1〜8重量%である、請求項1に記載のCMP方法。
- 前記アルミナ研磨材を、2〜7重量%の前記アルミナを含有するスラリーの形で加工品に提供する、請求項1に記載のCMP方法。
- 前記アルミナ研磨材を、硬化樹脂マトリックス中に分散した研磨材を含む固定研磨材の形で加工品に提供する、請求項1に記載のCMP方法。
- 前記固定研磨材が、複数の成形された構造を有する成形表面を有する、請求項5に記載のCMP方法。
- アルミナ粉末を含有するCMPスラリーであって、前記粉末のアルミナ粒子がシリカコーティングを有し、また前記粉末は、BET表面積が少なくとも50m2/gであり、アルミナ含有率が少なくとも90重量%であり、且つα−アルミナ含有率が少なくとも90重量%であり、またここで前記粒子の少なくとも90%の一次粒子幅が20〜50nmであり、前記アルミナ粒子の10%未満の一次粒子サイズが100nm超である、アルミナ粉末を含有するCMPスラリー。
- 硬化性樹脂中のアルミナ砥粒の分散体を硬化させることによって得られる複数の形成された構造を有する作用表面を具備する、CMPの用途で使用することが適当な加工研磨材であって、前記アルミナ砥粒は、シリカコーティングを有し、BET表面積が少なくとも50m2/gであり、アルミナ含有率が少なくとも90重量%であり、且つα−アルミナ含有率が少なくとも90重量%であり、またここで前記粒子の少なくとも90%の一次粒子幅が20〜50nmであり、前記アルミナ粒子の10%未満の一次粒子サイズが100nm超である、CMPの用途で使用することが適当な加工研磨材。
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US09/413,518 | 1999-10-06 | ||
US09/413,518 US6258137B1 (en) | 1992-02-05 | 1999-10-06 | CMP products |
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JP2006000173A Division JP2006186381A (ja) | 1999-10-06 | 2006-01-04 | Cmp生成物 |
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JP2011238952A true JP2011238952A (ja) | 2011-11-24 |
JP2011238952A5 JP2011238952A5 (ja) | 2012-10-18 |
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JP2001528524A Withdrawn JP2003511850A (ja) | 1999-10-06 | 2000-08-30 | Cmp生成物 |
JP2006000173A Withdrawn JP2006186381A (ja) | 1999-10-06 | 2006-01-04 | Cmp生成物 |
JP2011152232A Pending JP2011238952A (ja) | 1999-10-06 | 2011-07-08 | Cmp生成物 |
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JP2001528524A Withdrawn JP2003511850A (ja) | 1999-10-06 | 2000-08-30 | Cmp生成物 |
JP2006000173A Withdrawn JP2006186381A (ja) | 1999-10-06 | 2006-01-04 | Cmp生成物 |
Country Status (13)
Country | Link |
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US (1) | US6258137B1 (ja) |
EP (1) | EP1228161A1 (ja) |
JP (3) | JP2003511850A (ja) |
KR (1) | KR100485205B1 (ja) |
CN (1) | CN100396749C (ja) |
AU (1) | AU754060B2 (ja) |
BR (1) | BR0014533A (ja) |
CA (1) | CA2382724C (ja) |
HK (1) | HK1050913A1 (ja) |
RU (1) | RU2235747C2 (ja) |
TW (1) | TWI261068B (ja) |
WO (1) | WO2001025366A1 (ja) |
ZA (1) | ZA200201091B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108716001A (zh) * | 2018-06-16 | 2018-10-30 | 宁波明望汽车饰件有限公司 | 一种汽车配件表面处理工艺 |
US11685849B2 (en) | 2019-10-11 | 2023-06-27 | Saint-Gobain Abrasives, Inc. | Abrasive particle including coating, abrasive article including the abrasive particles, and method of forming |
Families Citing this family (77)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6413156B1 (en) * | 1996-05-16 | 2002-07-02 | Ebara Corporation | Method and apparatus for polishing workpiece |
US6068879A (en) * | 1997-08-26 | 2000-05-30 | Lsi Logic Corporation | Use of corrosion inhibiting compounds to inhibit corrosion of metal plugs in chemical-mechanical polishing |
US6475407B2 (en) * | 1998-05-19 | 2002-11-05 | Showa Denko K.K. | Composition for polishing metal on semiconductor wafer and method of using same |
JP3490038B2 (ja) * | 1999-12-28 | 2004-01-26 | Necエレクトロニクス株式会社 | 金属配線形成方法 |
EP1234800A1 (de) * | 2001-02-22 | 2002-08-28 | Degussa Aktiengesellschaft | Wässrige Dispersion, Verfahren zu ihrer Herstellung und Verwendung |
US6839362B2 (en) * | 2001-05-22 | 2005-01-04 | Saint-Gobain Ceramics & Plastics, Inc. | Cobalt-doped saturable absorber Q-switches and laser systems |
JP2003205462A (ja) * | 2002-01-11 | 2003-07-22 | Tokyo Seimitsu Co Ltd | Cmp研磨装置における研磨剤の調合装置及び調合方法 |
US7087187B2 (en) * | 2002-06-06 | 2006-08-08 | Grumbine Steven K | Meta oxide coated carbon black for CMP |
US6673132B1 (en) * | 2002-08-20 | 2004-01-06 | Everlight Usa, Inc. | SiO2/Al2O3 composite abrasive and method for producing the same |
US6866793B2 (en) * | 2002-09-26 | 2005-03-15 | University Of Florida Research Foundation, Inc. | High selectivity and high planarity dielectric polishing |
JP2004193495A (ja) | 2002-12-13 | 2004-07-08 | Toshiba Corp | 化学的機械的研磨用スラリーおよびこれを用いた半導体装置の製造方法 |
US7422730B2 (en) * | 2003-04-02 | 2008-09-09 | Saint-Gobain Ceramics & Plastics, Inc. | Nanoporous ultrafine α-alumina powders and sol-gel process of preparing same |
US20040198584A1 (en) * | 2003-04-02 | 2004-10-07 | Saint-Gobain Ceramics & Plastic, Inc. | Nanoporous ultrafine alpha-alumina powders and freeze drying process of preparing same |
US7326477B2 (en) * | 2003-09-23 | 2008-02-05 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel boules, wafers, and methods for fabricating same |
US7045223B2 (en) * | 2003-09-23 | 2006-05-16 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel articles and methods for forming same |
US20050061230A1 (en) * | 2003-09-23 | 2005-03-24 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel articles and methods for forming same |
US7166271B2 (en) * | 2003-10-28 | 2007-01-23 | J.M. Huber Corporation | Silica-coated boehmite composites suitable for dentifrices |
US7375733B2 (en) * | 2004-01-28 | 2008-05-20 | Canon Kabushiki Kaisha | Method for driving image display apparatus |
US7279424B2 (en) * | 2004-08-27 | 2007-10-09 | Hitachi Global Storage Technologies Netherlands B.V. | Method for fabricating thin film magnetic heads using CMP with polishing stop layer |
US7919815B1 (en) | 2005-02-24 | 2011-04-05 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel wafers and methods of preparation |
KR100641348B1 (ko) * | 2005-06-03 | 2006-11-03 | 주식회사 케이씨텍 | Cmp용 슬러리와 이의 제조 방법 및 기판의 연마 방법 |
US7678700B2 (en) * | 2006-09-05 | 2010-03-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
US7998866B2 (en) * | 2006-09-05 | 2011-08-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
US8083820B2 (en) * | 2006-12-22 | 2011-12-27 | 3M Innovative Properties Company | Structured fixed abrasive articles including surface treated nano-ceria filler, and method for making and using the same |
US7497885B2 (en) * | 2006-12-22 | 2009-03-03 | 3M Innovative Properties Company | Abrasive articles with nanoparticulate fillers and method for making and using them |
CA2673769C (en) * | 2007-01-15 | 2012-08-21 | Saint-Gobain Ceramics & Plastics, Inc. | Ceramic particulate material and processes for forming same |
US8491682B2 (en) * | 2007-12-31 | 2013-07-23 | K.C. Tech Co., Ltd. | Abrasive particles, method of manufacturing the abrasive particles, and method of manufacturing chemical mechanical polishing slurry |
FR2928916B1 (fr) | 2008-03-21 | 2011-11-18 | Saint Gobain Ct Recherches | Grains fondus et revetus de silice |
US7959695B2 (en) * | 2008-03-21 | 2011-06-14 | Saint-Gobain Ceramics & Plastics, Inc. | Fixed abrasive articles utilizing coated abrasive particles |
US9190096B2 (en) * | 2008-10-17 | 2015-11-17 | Hoya Corporation | Method for producing glass substrate and method for producing magnetic recording medium |
CA2755122C (en) * | 2009-03-13 | 2016-05-31 | Saint-Gobain Ceramics & Plastics, Inc. | Chemical mechanical planarization using nanodiamond |
JP6005516B2 (ja) * | 2009-11-13 | 2016-10-12 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | 無機粒子及びポリマー粒子を含む化学的機械研磨(cmp)組成物 |
BR112013016734A2 (pt) | 2010-12-31 | 2019-09-24 | Saint Gobain Ceramics | partículas abrasivas com formas particulares e métodos de deformação de tais partículas |
WO2013003830A2 (en) | 2011-06-30 | 2013-01-03 | Saint-Gobain Ceramics & Plastics, Inc. | Abrasive articles including abrasive particles of silicon nitride |
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WO2013102176A1 (en) | 2011-12-30 | 2013-07-04 | Saint-Gobain Ceramics & Plastics, Inc. | Forming shaped abrasive particles |
US8840696B2 (en) | 2012-01-10 | 2014-09-23 | Saint-Gobain Ceramics & Plastics, Inc. | Abrasive particles having particular shapes and methods of forming such particles |
WO2013106597A1 (en) | 2012-01-10 | 2013-07-18 | Saint-Gobain Ceramics & Plastics, Inc. | Abrasive particles having complex shapes and methods of forming same |
US9701878B2 (en) * | 2012-02-16 | 2017-07-11 | Konica Minolta, Inc. | Abrasive regeneration method |
US9242346B2 (en) | 2012-03-30 | 2016-01-26 | Saint-Gobain Abrasives, Inc. | Abrasive products having fibrillated fibers |
IN2014DN10170A (ja) | 2012-05-23 | 2015-08-21 | Saint Gobain Ceramics | |
WO2014005120A1 (en) | 2012-06-29 | 2014-01-03 | Saint-Gobain Ceramics & Plastics, Inc. | Abrasive particles having particular shapes and methods of forming such particles |
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KR102264348B1 (ko) * | 2013-07-11 | 2021-06-11 | 바스프 에스이 | 부식 저해제로서 벤조트리아졸 유도체를 포함하는 화학-기계적 연마 조성물 |
JP2016538149A (ja) | 2013-09-30 | 2016-12-08 | サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド | 形状化研磨粒子及び形状化研磨粒子を形成する方法 |
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US9771507B2 (en) | 2014-01-31 | 2017-09-26 | Saint-Gobain Ceramics & Plastics, Inc. | Shaped abrasive particle including dopant material and method of forming same |
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KR101884178B1 (ko) | 2014-04-14 | 2018-08-02 | 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 | 형상화 연마 입자들을 포함하는 연마 물품 |
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US9914864B2 (en) | 2014-12-23 | 2018-03-13 | Saint-Gobain Ceramics & Plastics, Inc. | Shaped abrasive particles and method of forming same |
US9707529B2 (en) | 2014-12-23 | 2017-07-18 | Saint-Gobain Ceramics & Plastics, Inc. | Composite shaped abrasive particles and method of forming same |
US9676981B2 (en) | 2014-12-24 | 2017-06-13 | Saint-Gobain Ceramics & Plastics, Inc. | Shaped abrasive particle fractions and method of forming same |
CN107636109A (zh) | 2015-03-31 | 2018-01-26 | 圣戈班磨料磨具有限公司 | 固定磨料制品和其形成方法 |
TWI634200B (zh) | 2015-03-31 | 2018-09-01 | 聖高拜磨料有限公司 | 固定磨料物品及其形成方法 |
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JP7458693B2 (ja) * | 2015-06-25 | 2024-04-01 | スリーエム イノベイティブ プロパティズ カンパニー | ガラス質ボンド研磨物品及びその製造方法 |
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KR102422875B1 (ko) | 2016-05-10 | 2022-07-21 | 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 | 연마 입자들 및 그 형성 방법 |
SI3455321T1 (sl) | 2016-05-10 | 2022-10-28 | Saint-Gobain Ceramics & Plastics, Inc. | Metode oblikovanja abrazivnih delcev |
CN106271898A (zh) * | 2016-08-18 | 2017-01-04 | 广西华银铝业有限公司 | 一种石英片的清洁方法 |
JP6947827B2 (ja) | 2016-09-23 | 2021-10-13 | サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティドSaint−Gobain Ceramics And Plastics, Inc. | 化学的機械的平坦化スラリーおよびその形成方法 |
WO2018064642A1 (en) | 2016-09-29 | 2018-04-05 | Saint-Gobain Abrasives, Inc. | Fixed abrasive articles and methods of forming same |
US10563105B2 (en) | 2017-01-31 | 2020-02-18 | Saint-Gobain Ceramics & Plastics, Inc. | Abrasive article including shaped abrasive particles |
US10759024B2 (en) | 2017-01-31 | 2020-09-01 | Saint-Gobain Ceramics & Plastics, Inc. | Abrasive article including shaped abrasive particles |
WO2018236989A1 (en) | 2017-06-21 | 2018-12-27 | Saint-Gobain Ceramics & Plastics, Inc. | PARTICULATE MATERIALS AND METHODS OF FORMATION THEREOF |
US11117239B2 (en) | 2017-09-29 | 2021-09-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chemical mechanical polishing composition and method |
RU2687649C2 (ru) * | 2017-10-04 | 2019-05-15 | Общество с ограниченной ответственностью "КРОКУС НАНОЭЛЕКТРОНИКА" | Способ химико-механической полировки толстых слоев кобальтсодержащих сплавов |
JP7167558B2 (ja) * | 2018-08-30 | 2022-11-09 | Jsr株式会社 | 化学機械研磨用水系分散体 |
JP7167557B2 (ja) * | 2018-08-30 | 2022-11-09 | Jsr株式会社 | 化学機械研磨用アルミナ砥粒及びその製造方法 |
WO2021133901A1 (en) | 2019-12-27 | 2021-07-01 | Saint-Gobain Ceramics & Plastics, Inc. | Abrasive articles and methods of forming same |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05345611A (ja) * | 1992-02-05 | 1993-12-27 | Norton Co | ナノサイズのαアルミナ粒子とその製造方法 |
WO1997049647A1 (en) * | 1996-06-26 | 1997-12-31 | Minnesota Mining And Manufacturing Company | Method for making ceramic materials from boehmite |
WO1998018159A1 (en) * | 1996-10-18 | 1998-04-30 | Micron Technology, Inc. | Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad |
JPH1121546A (ja) * | 1996-12-09 | 1999-01-26 | Cabot Corp | 銅系基板に有用な化学的・機械的研磨用スラリー |
JPH11238709A (ja) * | 1997-10-20 | 1999-08-31 | Motorola Inc | 銅のための化学的機械的研磨(cmp)スラリおよびその使用方法 |
JPH11511394A (ja) * | 1995-10-10 | 1999-10-05 | ローデル インコーポレイテッド | 改良研磨スラリー及びその使用方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5037806A (ja) | 1973-06-27 | 1975-04-08 | ||
US4012337A (en) | 1974-03-13 | 1977-03-15 | Exxon Research And Engineering Company | High surface area alpha aluminas |
US4062693A (en) | 1976-09-29 | 1977-12-13 | Union Carbide Corporation | Dry liquid alumina trihydrate concentrates |
FR2398540A1 (fr) | 1977-07-29 | 1979-02-23 | Raffinage Cie Francaise | Procede de preparation d'alumines a porosite controlee et applications des alumines ainsi preparees |
US4786555A (en) | 1983-10-27 | 1988-11-22 | E. I. Du Pont De Nemours And Company | Support particles coated with or particles of precursors for or of biologically active glass |
IT1184114B (it) | 1985-01-18 | 1987-10-22 | Montedison Spa | Alfa allumina sotto forma di particelle sferiche,non aggregate,a distribuzione granulometrica ristretta e di dimensioni inferiori a 2 micron,e processo per la sua preparazione |
US4737411A (en) | 1986-11-25 | 1988-04-12 | University Of Dayton | Controlled pore size ceramics particularly for orthopaedic and dental applications |
DE68927116T2 (de) | 1988-01-19 | 1997-02-06 | Fujimi Inc | Poliermasse |
YU32490A (en) * | 1989-03-13 | 1991-10-31 | Lonza Ag | Hydrophobic layered grinding particles |
US5131923A (en) * | 1989-09-11 | 1992-07-21 | Norton Company | Vitrified bonded sol gel sintered aluminous abrasive bodies |
US4997461A (en) | 1989-09-11 | 1991-03-05 | Norton Company | Nitrified bonded sol gel sintered aluminous abrasive bodies |
US5213591A (en) * | 1992-07-28 | 1993-05-25 | Ahmet Celikkaya | Abrasive grain, method of making same and abrasive products |
EP0652918B1 (en) * | 1992-07-28 | 1998-10-21 | Minnesota Mining And Manufacturing Company | Abrasive grain with metal oxide coating, method of making same and abrasive products |
EP0720520B1 (en) * | 1993-09-13 | 1999-07-28 | Minnesota Mining And Manufacturing Company | Abrasive article, method of manufacture of same, method of using same for finishing, and a production tool |
US5454844A (en) * | 1993-10-29 | 1995-10-03 | Minnesota Mining And Manufacturing Company | Abrasive article, a process of making same, and a method of using same to finish a workpiece surface |
JPH09505101A (ja) * | 1993-11-12 | 1997-05-20 | ミネソタ マイニング アンド マニュファクチャリング カンパニー | 砥粒及びその製造方法 |
US5527423A (en) | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
US5609657A (en) | 1996-02-22 | 1997-03-11 | Showa Denko K.K. | Composition for texturing magnetic disk |
US5932486A (en) | 1996-08-16 | 1999-08-03 | Rodel, Inc. | Apparatus and methods for recirculating chemical-mechanical polishing of semiconductor wafers |
-
1999
- 1999-10-06 US US09/413,518 patent/US6258137B1/en not_active Expired - Lifetime
-
2000
- 2000-08-30 JP JP2001528524A patent/JP2003511850A/ja not_active Withdrawn
- 2000-08-30 AU AU70902/00A patent/AU754060B2/en not_active Ceased
- 2000-08-30 RU RU2002107429/04A patent/RU2235747C2/ru not_active IP Right Cessation
- 2000-08-30 CA CA002382724A patent/CA2382724C/en not_active Expired - Fee Related
- 2000-08-30 CN CNB008137676A patent/CN100396749C/zh not_active Expired - Fee Related
- 2000-08-30 BR BR0014533-5A patent/BR0014533A/pt not_active Application Discontinuation
- 2000-08-30 EP EP00959612A patent/EP1228161A1/en not_active Ceased
- 2000-08-30 KR KR10-2002-7004384A patent/KR100485205B1/ko not_active IP Right Cessation
- 2000-08-30 WO PCT/US2000/023799 patent/WO2001025366A1/en not_active Application Discontinuation
- 2000-10-04 TW TW089120667A patent/TWI261068B/zh not_active IP Right Cessation
-
2002
- 2002-02-07 ZA ZA200201091A patent/ZA200201091B/en unknown
-
2003
- 2003-04-30 HK HK03103083.9A patent/HK1050913A1/xx not_active IP Right Cessation
-
2006
- 2006-01-04 JP JP2006000173A patent/JP2006186381A/ja not_active Withdrawn
-
2011
- 2011-07-08 JP JP2011152232A patent/JP2011238952A/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05345611A (ja) * | 1992-02-05 | 1993-12-27 | Norton Co | ナノサイズのαアルミナ粒子とその製造方法 |
JPH11511394A (ja) * | 1995-10-10 | 1999-10-05 | ローデル インコーポレイテッド | 改良研磨スラリー及びその使用方法 |
WO1997049647A1 (en) * | 1996-06-26 | 1997-12-31 | Minnesota Mining And Manufacturing Company | Method for making ceramic materials from boehmite |
WO1998018159A1 (en) * | 1996-10-18 | 1998-04-30 | Micron Technology, Inc. | Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad |
JPH1121546A (ja) * | 1996-12-09 | 1999-01-26 | Cabot Corp | 銅系基板に有用な化学的・機械的研磨用スラリー |
JPH11238709A (ja) * | 1997-10-20 | 1999-08-31 | Motorola Inc | 銅のための化学的機械的研磨(cmp)スラリおよびその使用方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108716001A (zh) * | 2018-06-16 | 2018-10-30 | 宁波明望汽车饰件有限公司 | 一种汽车配件表面处理工艺 |
CN108716001B (zh) * | 2018-06-16 | 2019-05-17 | 宁波明望汽车饰件有限公司 | 一种汽车配件表面处理工艺 |
US11685849B2 (en) | 2019-10-11 | 2023-06-27 | Saint-Gobain Abrasives, Inc. | Abrasive particle including coating, abrasive article including the abrasive particles, and method of forming |
Also Published As
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CA2382724A1 (en) | 2001-04-12 |
CA2382724C (en) | 2006-01-24 |
ZA200201091B (en) | 2003-07-30 |
WO2001025366A1 (en) | 2001-04-12 |
CN1377395A (zh) | 2002-10-30 |
CN100396749C (zh) | 2008-06-25 |
BR0014533A (pt) | 2002-06-04 |
HK1050913A1 (en) | 2003-07-11 |
KR20020077337A (ko) | 2002-10-11 |
AU7090200A (en) | 2001-05-10 |
EP1228161A1 (en) | 2002-08-07 |
AU754060B2 (en) | 2002-10-31 |
JP2003511850A (ja) | 2003-03-25 |
KR100485205B1 (ko) | 2005-04-27 |
US6258137B1 (en) | 2001-07-10 |
RU2235747C2 (ru) | 2004-09-10 |
TWI261068B (en) | 2006-09-01 |
JP2006186381A (ja) | 2006-07-13 |
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