HK1050913A1 - Cmp process and use of cmp slurry comprisng alumina powder and engineered abrasive - Google Patents

Cmp process and use of cmp slurry comprisng alumina powder and engineered abrasive

Info

Publication number
HK1050913A1
HK1050913A1 HK03103083.9A HK03103083A HK1050913A1 HK 1050913 A1 HK1050913 A1 HK 1050913A1 HK 03103083 A HK03103083 A HK 03103083A HK 1050913 A1 HK1050913 A1 HK 1050913A1
Authority
HK
Hong Kong
Prior art keywords
cmp
comprisng
alumina powder
engineered abrasive
cmp process
Prior art date
Application number
HK03103083.9A
Other languages
English (en)
Inventor
Ajay K Garg
Brahmanandam V Tanikella
William R Delaney
Original Assignee
Saint Gobain Ceramics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Ceramics filed Critical Saint Gobain Ceramics
Publication of HK1050913A1 publication Critical patent/HK1050913A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F7/00—Compounds of aluminium
    • C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
    • C01F7/44—Dehydration of aluminium oxide or hydroxide, i.e. all conversions of one form into another involving a loss of water
    • C01F7/441—Dehydration of aluminium oxide or hydroxide, i.e. all conversions of one form into another involving a loss of water by calcination
    • C01F7/442—Dehydration of aluminium oxide or hydroxide, i.e. all conversions of one form into another involving a loss of water by calcination in presence of a calcination additive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/01—Crystal-structural characteristics depicted by a TEM-image
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/51—Particles with a specific particle size distribution
    • C01P2004/52—Particles with a specific particle size distribution highly monodisperse size distribution
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated
    • Y10T428/2993—Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]
HK03103083.9A 1999-10-06 2003-04-30 Cmp process and use of cmp slurry comprisng alumina powder and engineered abrasive HK1050913A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/413,518 US6258137B1 (en) 1992-02-05 1999-10-06 CMP products
PCT/US2000/023799 WO2001025366A1 (en) 1999-10-06 2000-08-30 Cmp products

Publications (1)

Publication Number Publication Date
HK1050913A1 true HK1050913A1 (en) 2003-07-11

Family

ID=23637528

Family Applications (1)

Application Number Title Priority Date Filing Date
HK03103083.9A HK1050913A1 (en) 1999-10-06 2003-04-30 Cmp process and use of cmp slurry comprisng alumina powder and engineered abrasive

Country Status (13)

Country Link
US (1) US6258137B1 (xx)
EP (1) EP1228161A1 (xx)
JP (3) JP2003511850A (xx)
KR (1) KR100485205B1 (xx)
CN (1) CN100396749C (xx)
AU (1) AU754060B2 (xx)
BR (1) BR0014533A (xx)
CA (1) CA2382724C (xx)
HK (1) HK1050913A1 (xx)
RU (1) RU2235747C2 (xx)
TW (1) TWI261068B (xx)
WO (1) WO2001025366A1 (xx)
ZA (1) ZA200201091B (xx)

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Also Published As

Publication number Publication date
AU7090200A (en) 2001-05-10
BR0014533A (pt) 2002-06-04
CA2382724C (en) 2006-01-24
EP1228161A1 (en) 2002-08-07
CA2382724A1 (en) 2001-04-12
JP2006186381A (ja) 2006-07-13
WO2001025366A1 (en) 2001-04-12
US6258137B1 (en) 2001-07-10
ZA200201091B (en) 2003-07-30
JP2011238952A (ja) 2011-11-24
AU754060B2 (en) 2002-10-31
CN1377395A (zh) 2002-10-30
RU2235747C2 (ru) 2004-09-10
KR100485205B1 (ko) 2005-04-27
CN100396749C (zh) 2008-06-25
JP2003511850A (ja) 2003-03-25
KR20020077337A (ko) 2002-10-11
TWI261068B (en) 2006-09-01

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