JP2011222500A - 二次電池と二次電池の電極の作製方法 - Google Patents
二次電池と二次電池の電極の作製方法 Download PDFInfo
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- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49108—Electric battery cell making
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
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Abstract
【解決手段】シリコンまたはシリコン化合物を含む電極を有し、該電極は、例えば、金属により設けられた集電体と、該集電体上に活物質として設けられたシリコン膜と、を有する二次電池を提供する。このとき、該電極のシリコン膜中の水素濃度が、1.0×1018cm−3以上1.0×1021cm−3以下であればよい。このようなシリコン膜は、例えば、プラズマCVD法などを用いて集電体上にシリコン膜を形成し、該シリコン膜中には極力水素が含まれないようにすることが好ましい。シリコン膜中に極力水素が含まれないようにするためには、高温環境下で集電体上にシリコン膜を形成すればよい。
【選択図】図3
Description
102 電池蓋
104 電池側壁部
106 電池底部
110 電極体
112 絶縁板
114 絶縁板
116 抵抗素子
118 ガスケット
120 導線
122 負極
124 セパレータ
126 正極
128 導線
130 基板
132 集電体層
134 活物質層
136 混合層
138 リチウム含有層
200 集電体
202 正極活物質層
204 正極
206 筐体
210 セパレータ
220 リング状絶縁体
230 負極活物質層
232 負極
240 スペーサー
242 ワッシャー
244 筐体
Claims (15)
- シリコン膜またはシリコン化合物膜を含む電極を有し、
該電極中の水素濃度が、1.0×1018cm−3以上1.0×1021cm−3以下であることを特徴とする二次電池。 - 請求項1において、シリコン膜またはシリコン化合物膜を含む前記電極が、
金属により設けられた集電体と、
該集電体上に活物質として設けられたシリコン膜またはシリコン化合物膜と、を有し、
前記シリコン膜またはシリコン化合物膜中の水素濃度が、1.0×1018cm−3以上1.0×1021cm−3以下であることを特徴とする二次電池。 - 請求項2において、
前記金属はチタンであることを特徴とする二次電池。 - 請求項2または請求項3において、
前記集電体と前記シリコン膜またはシリコン化合物膜の間に混合層を有することを特徴とする二次電池。 - 請求項4において、
前記混合層はチタンとシリコンを有することを特徴とする二次電池。 - 請求項4において、
前記混合層はチタンシリサイドを有することを特徴とする二次電池。 - 請求項1乃至請求項5のいずれか一に記載の前記電極と対向する電極がアルカリ金属を有することを特徴とする二次電池。
- 請求項6において、前記アルカリ金属がリチウムであることを特徴とする二次電池。
- 請求項1乃至請求項8のいずれか一において、
前記シリコン膜またはシリコン化合物膜がアモルファスシリコンを有することを特徴とする二次電池。 - シリコン膜またはシリコン化合物膜を含む電極を有し、
前記シリコン膜またはシリコン化合物膜は多結晶シリコンであり、
前記シリコン膜またはシリコン化合物膜中の水素濃度は、1.0×1018cm−3以上1.0×1021cm−3以下であることを特徴とする二次電池。 - 請求項1乃至請求項10のいずれか一において、
前記シリコン膜またはシリコン化合物膜がリンを有することを特徴とする二次電池。 - 集電体を形成し、
該集電体上にシリコン膜を形成し、
前記シリコン膜中の水素濃度は、1.0×1018cm−3以上1.0×1021cm−3以下であることを特徴とする二次電池の電極の作製方法。 - 請求項12において、
前記シリコン膜は多結晶シリコン膜であることを特徴とする二次電池の電極の作製方法。 - 請求項13において、
前記多結晶シリコン膜は熱結晶化法により形成されていることを特徴とする二次電池の電極の作製方法。 - 請求項12において、
前記シリコン膜は、500℃以上、且つ集電体の組成または形を変えない温度以下で形成されることを特徴とする二次電池の電極の作製方法。
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JP2011068646A JP2011222500A (ja) | 2010-03-26 | 2011-03-25 | 二次電池と二次電池の電極の作製方法 |
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JP2011068646A JP2011222500A (ja) | 2010-03-26 | 2011-03-25 | 二次電池と二次電池の電極の作製方法 |
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JP2014192400A Expired - Fee Related JP5886506B2 (ja) | 2010-03-26 | 2014-09-22 | 二次電池、及び二次電池の作製方法 |
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US (1) | US8623550B2 (ja) |
JP (2) | JP2011222500A (ja) |
KR (1) | KR20130040187A (ja) |
CN (1) | CN102823028B (ja) |
TW (1) | TWI574449B (ja) |
WO (1) | WO2011118369A1 (ja) |
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WO2011152190A1 (en) * | 2010-06-02 | 2011-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing the same |
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CN106033808B (zh) * | 2015-03-17 | 2019-08-13 | 石东益 | 硅基电极及其制作工艺 |
CN109478640B (zh) | 2016-07-05 | 2022-04-12 | 克雷多斯公司 | 钝化的预锂化微米和次微米的iva族粒子及其制法 |
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- 2011-03-01 CN CN201180016382.1A patent/CN102823028B/zh not_active Expired - Fee Related
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- 2011-03-15 TW TW100108714A patent/TWI574449B/zh not_active IP Right Cessation
- 2011-03-25 JP JP2011068646A patent/JP2011222500A/ja not_active Withdrawn
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Publication number | Publication date |
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CN102823028B (zh) | 2016-06-29 |
CN102823028A (zh) | 2012-12-12 |
KR20130040187A (ko) | 2013-04-23 |
JP5886506B2 (ja) | 2016-03-16 |
TWI574449B (zh) | 2017-03-11 |
WO2011118369A1 (en) | 2011-09-29 |
US8623550B2 (en) | 2014-01-07 |
JP2015018821A (ja) | 2015-01-29 |
US20110236753A1 (en) | 2011-09-29 |
TW201140918A (en) | 2011-11-16 |
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