JP2011216888A - 物体の表面を処理するための処理装置 - Google Patents
物体の表面を処理するための処理装置 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
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Abstract
【解決手段】処理装置1は、物体2を保持するための保持デバイス5と、保持デバイス5に結合される回転駆動部6と、物体の表面21に対して第1の処理媒体31及び第2の処理媒体32を供給するための供給デバイス7とを備え、分離要素80を有する収集コンテナ8を備える。分離要素80は、収集コンテナ8を第1のチャンバ81及び第2のチャンバ82に区分する。第1の処理媒体31は、第1のチャンバ81内に収集され、第2の処理媒体32は、第2のチャンバ82内に収集される。収集コンテナ8は、保持デバイス5に対して変位不能なベース・チャンバ部分800を備え、分離要素80は、第1の処理媒体31を第1のチャンバ81内に送る第1の位置Aと、第2の処理媒体32を第2のチャンバ82内に送る第2の位置Bとの間で移動可能である。
【選択図】図1a
Description
Claims (15)
- 第1の処理媒体(31)及び第2の処理媒体(32)を用いて物体(2)の表面(21)を処理するための処理装置であって、前記処理装置が、
前記物体(2)を受け保持するための回転軸線(4)を中心として回転可能な保持デバイス(5)と、
前記回転可能な保持デバイス(5)に回転式に固定的に結合された回転駆動部(6)と、
前記保持デバイス(5)に保持された前記物体の前記表面(21)に前記第1の処理媒体(31)及び前記第2の処理媒体(32)を供給するための供給デバイス(7)と
を備え、
前記処理装置が、分離要素(80)を有する収集コンテナ(8)を備え、前記分離要素(80)は、前記収集コンテナ(8)を第1のチャンバ(81)及び第2のチャンバ(82)に区分し、それにより、前記第1の処理媒体(31)を前記第1のチャンバ(81)に収集することが可能となり、前記第2の処理媒体(32)を前記第2のチャンバ(82)に別個に収集することが可能となる、処理装置において、
前記収集コンテナ(8)は、前記保持デバイス(5)に対して変位不能なベース・チャンバ部分(800)を備え、前記分離要素(80)は、前記第1の処理媒体(31)を前記第1のチャンバ(81)に送ることが可能となる第1の位置(A)と、前記第2の処理媒体(32)を前記第2のチャンバ(82)に送ることが可能となる第2の位置(B)との間で移動可能な状態で配置されることを特徴とする、処理装置。 - 前記変位不能なベース・チャンバ部分(800)がチャンバ底部(801)を備え、前記チャンバ底部(801)を介して、前記収集コンテナ(8)から前記第1の処理媒体(31)及び前記第2の処理媒体(32)を送ることが可能になっている、請求項1に記載された処理装置。
- 前記分離要素(80)は、連結ロッド(84)により、前記第1の位置(A)と前記第2の位置(B)との間で移動可能になっている、請求項1又は請求項2に記載された処理装置。
- 前記分離要素(80)は、スピンドル(85)により、前記第1の位置(A)と前記第2の位置(B)との間で移動可能になっている、請求項1から請求項3までのいずれか一項に記載された処理装置。
- 前記分離要素(80)は、伸張可能なベローズ(86)により、前記第1の位置(A)と前記第2の位置(B)との間で移動可能になっている、請求項1から請求項4までのいずれか一項に記載された処理装置。
- 前記分離要素(80)は、可撓性壁部の事前設置可能領域に形成される、請求項1から請求項5までのいずれか一項に記載された処理装置。
- 前記回転可能な保持デバイス(5)は、プロセス・チャンバ内に設けられる、請求項1から請求項6までのいずれか一項に記載された処理装置。
- 前記回転駆動部(6)は、プロセス・チャンバ内に設けられる、請求項1から請求項7までのいずれか一項に記載された処理装置。
- 前記回転駆動部(6)は、ステータ(62)と、前記ステータ(62)に対して軸受を用いずに磁気によりジャーナル軸支されるロータ(61)とを備えるベアリングレス・モータ(6)であり、前記ベアリングレス・モータ(6)は、好ましくは前記プロセス・チャンバ内に、前記ステータ及び前記ロータを有するように設計される、請求項1から請求項8までのいずれか一項に記載された処理装置。
- 前記ロータ(61)が前記保持デバイス(5)を形成している、請求項9に記載された処理装置。
- 前記ロータ(61)がリング(61)として作製される、請求項9又は請求項10に記載された処理装置。
- 前記ロータ(61)が永久磁気を有する、請求項9から請求項11までのいずれか一項に記載された処理装置。
- 前記ステータ(62)が前記プロセス・チャンバの外部に設けられる、請求項9から請求項12までのいずれか一項に記載された処理装置。
- 前記物体(2)が小型電子部品を製造するためのディスク(2)、とりわけウェーハ(2)である、請求項1から請求項13までのいずれか一項に記載された処理装置。
- マニピュレータ(M)、とりわけプログラム制御ロボット・ユニット(M)が、前記物体(2)の自動交換のために設けられる、請求項1から請求項14までのいずれか一項に記載された処理装置。
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EP10158604 | 2010-03-31 | ||
EP10158604.8 | 2010-03-31 |
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JP2011216888A true JP2011216888A (ja) | 2011-10-27 |
JP6053257B2 JP6053257B2 (ja) | 2016-12-27 |
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JP2011074748A Active JP6053257B2 (ja) | 2010-03-31 | 2011-03-30 | 物体の表面を処理するための処理装置 |
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US (2) | US10468277B2 (ja) |
EP (1) | EP2372749B1 (ja) |
JP (1) | JP6053257B2 (ja) |
KR (1) | KR101900349B1 (ja) |
TW (1) | TWI514455B (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20190069595A (ko) * | 2016-11-09 | 2019-06-19 | 티이엘 에프에스아이, 인코포레이티드 | 공정 챔버에서 마이크로전자 기판을 처리하기 위한 자기적으로 부상되고 회전되는 척 |
US11458512B2 (en) | 2017-01-27 | 2022-10-04 | Tel Manufacturing And Engineering Of America, Inc. | Systems and methods for rotating and translating a substrate in a process chamber |
US11476129B2 (en) | 2016-11-29 | 2022-10-18 | Tel Manufacturing And Engineering Of America, Inc. | Translating and rotating chuck for processing microelectronic substrates in a process chamber |
US11545387B2 (en) | 2018-07-13 | 2023-01-03 | Tel Manufacturing And Engineering Of America, Inc. | Magnetic integrated lift pin system for a chemical processing chamber |
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EP2372749B1 (de) * | 2010-03-31 | 2021-09-29 | Levitronix GmbH | Behandlungsvorrichtung zur Behandlung einer Oberfläche eines Körpers |
US10269615B2 (en) | 2011-09-09 | 2019-04-23 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
US9339914B2 (en) * | 2012-09-10 | 2016-05-17 | Applied Materials, Inc. | Substrate polishing and fluid recycling system |
JP6239893B2 (ja) * | 2013-08-07 | 2017-11-29 | 株式会社荏原製作所 | ウェット処理装置及びこれを備えた基板処理装置 |
JP6389449B2 (ja) * | 2015-08-21 | 2018-09-12 | 信越半導体株式会社 | 研磨装置 |
JP2020128745A (ja) | 2019-02-01 | 2020-08-27 | ホワイト ナイト フルイド ハンドリング インコーポレーテッドWhite Knight Fluid Handling Inc. | ロータを支承し、当該ロータを磁気的に軸線方向に位置決めするための磁石を有するポンプ、及びこれに関連する方法 |
CN115410963B (zh) * | 2022-11-02 | 2023-01-03 | 华海清科股份有限公司 | 一种晶圆后处理装置 |
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2017
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KR20190069595A (ko) * | 2016-11-09 | 2019-06-19 | 티이엘 에프에스아이, 인코포레이티드 | 공정 챔버에서 마이크로전자 기판을 처리하기 위한 자기적으로 부상되고 회전되는 척 |
JP2019537261A (ja) * | 2016-11-09 | 2019-12-19 | ティーイーエル エフエスアイ,インコーポレイティド | プロセスチャンバ中でマイクロエレクトロニクス基板を処理するための磁気的な浮上および回転するチャック |
KR102518220B1 (ko) * | 2016-11-09 | 2023-04-04 | 티이엘 매뉴팩처링 앤드 엔지니어링 오브 아메리카, 인크. | 공정 챔버에서 마이크로전자 기판을 처리하기 위한 자기적으로 부상되고 회전되는 척 |
JP7297664B2 (ja) | 2016-11-09 | 2023-06-26 | ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ,インコーポレイテッド | プロセスチャンバ中でマイクロエレクトロニクス基板を処理するための磁気的な浮上および回転するチャック |
JP7405921B2 (ja) | 2016-11-09 | 2023-12-26 | ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ,インコーポレイテッド | プロセスチャンバ中でマイクロエレクトロニクス基板を処理するための磁気的な浮上および回転するチャック |
US11476129B2 (en) | 2016-11-29 | 2022-10-18 | Tel Manufacturing And Engineering Of America, Inc. | Translating and rotating chuck for processing microelectronic substrates in a process chamber |
US11458512B2 (en) | 2017-01-27 | 2022-10-04 | Tel Manufacturing And Engineering Of America, Inc. | Systems and methods for rotating and translating a substrate in a process chamber |
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EP2372749B1 (de) | 2021-09-29 |
TW201212111A (en) | 2012-03-16 |
US20110240220A1 (en) | 2011-10-06 |
US10468277B2 (en) | 2019-11-05 |
KR101900349B1 (ko) | 2018-09-19 |
EP2372749A1 (de) | 2011-10-05 |
JP6053257B2 (ja) | 2016-12-27 |
KR20110110050A (ko) | 2011-10-06 |
TWI514455B (zh) | 2015-12-21 |
US20170287739A1 (en) | 2017-10-05 |
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