JP2011199122A - 半導体発光素子の製造方法 - Google Patents
半導体発光素子の製造方法 Download PDFInfo
- Publication number
- JP2011199122A JP2011199122A JP2010066087A JP2010066087A JP2011199122A JP 2011199122 A JP2011199122 A JP 2011199122A JP 2010066087 A JP2010066087 A JP 2010066087A JP 2010066087 A JP2010066087 A JP 2010066087A JP 2011199122 A JP2011199122 A JP 2011199122A
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- conductive film
- layer
- transparent conductive
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 103
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 64
- 238000001312 dry etching Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 19
- 150000004767 nitrides Chemical class 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 14
- 238000001039 wet etching Methods 0.000 claims description 8
- 230000007423 decrease Effects 0.000 claims description 6
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 238000009826 distribution Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 230000001681 protective effect Effects 0.000 description 11
- 239000010931 gold Substances 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 239000007789 gas Substances 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- -1 InGaN Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910052716 thallium Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】第2半導体層108上の全面に、透明導電膜10を形成し、形成された透明導電膜の上に、フォトレジストを塗布し、第1半導体層104の電極形成部16の上部のフォトレジストが除去される際に、除去される部分の輪郭部において、残されたフォトレジストの厚さが除去される部分に向かって次第に薄くなるようにフォトレジストを除去する。残されたフォトレジストをマスクとして、透明導電膜をウエットエッチングして、第2半導体層の一部を露出させる。残されたフォトレジスト及び透明導電膜をマスクとして、ドライエッチングして、第1半導体層の電極形成部を露出させる。残されたフォトレジストをマスクとして、透明導電膜のドライエッチングで露出した部分をウエットエッチングし、残されたフォトレジストを除去する。
【選択図】図1
Description
さらには、ITO膜とその上のフォトレジストをマスクとして、p型層などの半導体層を反応性ガスのプラズマを用いてドライエッチングしてn型層を露出させる場合に、ITOを構成するIn、Snなどの導電性金属原子が、pn接合の側面に付着して、リーク電流の原因となるという問題があった。
基板としては、絶縁性基板、導電性基板、不透光性基板、透光性基板など、任意の基板を用いることができる。たとえば、サファイア(Al2O3)、炭化硅素(SiC)、窒化ガリウム(GaN)、リン化ガリウム(GaP)、酸化亜鉛(ZnO)、酸化マグネシウム(MgO)、酸化マンガン(MnO)、一般式Alx Gay In1-x-y Nで表される4元、3元、2元の半導体、AlN、セラミックス、などを用いることができる。
5…露出部
10…透明導電膜
15…傾斜部
20…絶縁性保護膜
40…pパッド電極
101…サファイア基板
102…バッファ層
104…n型コンタクト層
105…歪み緩和層
106…発光層
107…p型クラッド層
108…p型コンタクト層
30…n電極
Claims (3)
- 基板と、この基板上に形成された第1伝導型の第1半導体層と、第1伝導型とは異なる第2伝導型の第2半導体層と、第2半導体層の上に形成された透明導電膜から成る第2電極と、前記第2半導体層側からエッチングして、前記第1半導体層の電極形成部を露出させ、この電極形成部に第1電極を形成する半導体発光素子の製造方法において、
前記第2半導体層上の全面に、前記透明導電膜を形成し、
形成された前記透明導電膜の上に、フォトレジストを塗布し、
前記第1半導体層の前記電極形成部の上部のフォトレジストが除去される際に、除去される部分の輪郭部において、残されたフォトレジストの厚さが除去される部分に向かって次第に薄くなるようにフォトレジストを除去し、
残されたフォトレジストをマスクとして、前記透明導電膜をウエットエッチングして、前記第2半導体層の一部を露出させ、
残された前記フォトレジスト及び前記透明導電膜をマスクとして、ドライエッチングして、前記第1半導体層の前記電極形成部を露出させ、
残された前記フォトレジストをマスクとして、前記透明導電膜の前記ドライエッチングで露出した部分をウエットエッチングし、
残されたフォトレジストを除去する
ことを特徴とする半導体発光素子の製造方法。 - 前記輪郭部におけるフォトレジストの厚さは、露光量分布を制御することにより、現像後のフォトレジストの厚さを、除去される部分に向かって次第に薄くなるように制御されることを特徴とする請求項1に記載の半導体発光素子の製造方法。
- 前記第1半導体層は、n型のIII 族窒化物半導体から成り、前記第2半導体層は、p型のIII 族窒化物半導体から成ることを特徴とする請求項1又は請求項2に記載の半導体発光素子の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010066087A JP5195798B2 (ja) | 2010-03-23 | 2010-03-23 | 半導体発光素子の製造方法 |
CN201180014812.6A CN102812566B (zh) | 2010-03-23 | 2011-03-14 | 半导体发光元件制造方法 |
PCT/JP2011/001472 WO2011118149A1 (ja) | 2010-03-23 | 2011-03-14 | 半導体発光素子の製造方法 |
US13/636,392 US8936950B2 (en) | 2010-03-23 | 2011-03-14 | Method for manufacturing semiconductor light-emitting device |
TW100109399A TWI420698B (zh) | 2010-03-23 | 2011-03-18 | 半導體發光元件之製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010066087A JP5195798B2 (ja) | 2010-03-23 | 2010-03-23 | 半導体発光素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011199122A true JP2011199122A (ja) | 2011-10-06 |
JP5195798B2 JP5195798B2 (ja) | 2013-05-15 |
Family
ID=44672730
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010066087A Active JP5195798B2 (ja) | 2010-03-23 | 2010-03-23 | 半導体発光素子の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8936950B2 (ja) |
JP (1) | JP5195798B2 (ja) |
CN (1) | CN102812566B (ja) |
TW (1) | TWI420698B (ja) |
WO (1) | WO2011118149A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103178183A (zh) * | 2011-12-26 | 2013-06-26 | Lg伊诺特有限公司 | 发光器件 |
WO2014014300A3 (ko) * | 2012-07-18 | 2014-03-13 | 주식회사 세미콘라이트 | 반도체 발광소자 |
US9236524B2 (en) | 2012-07-18 | 2016-01-12 | Semicon Light Co., Ltd. | Method of manufacturing semiconductor light emitting device |
JP2016531425A (ja) * | 2013-07-25 | 2016-10-06 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | オプトエレクトロニクス半導体チップ、半導体部品、および、オプトエレクトロニクス半導体チップの製造方法 |
US10535798B2 (en) | 2012-07-18 | 2020-01-14 | Semicon Light Co., Ltd. | Semiconductor light emitting device comprising finger electrodes |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DK2744931T3 (en) * | 2011-08-18 | 2018-08-06 | Affinity Biosciences Pty Ltd | SOLUBLE POLYPEPTIDES |
TW201513397A (zh) * | 2013-09-26 | 2015-04-01 | Lextar Electronics Corp | 發光二極體之製造方法 |
DE102014107555A1 (de) | 2014-05-28 | 2015-12-03 | Osram Opto Semiconductors Gmbh | Elektrische Kontaktstruktur für ein Halbleiterbauelement und Halbleiterbauelement |
CN104659169A (zh) * | 2015-02-15 | 2015-05-27 | 映瑞光电科技(上海)有限公司 | 一种简易倒装led及其制作方法 |
CN106410007B (zh) * | 2016-09-22 | 2019-07-19 | 佛山市国星半导体技术有限公司 | 一种双层电极led芯片及其制作方法 |
CN108511574A (zh) * | 2017-02-28 | 2018-09-07 | 山东浪潮华光光电子股份有限公司 | 一种GaN基发光二极管芯片的制备方法 |
CN111063771A (zh) * | 2020-01-06 | 2020-04-24 | 江西圆融光电科技有限公司 | Led芯片的制备方法及led芯片 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07130701A (ja) * | 1993-11-05 | 1995-05-19 | Fuji Electric Co Ltd | 透明導電膜のパターニング方法 |
JP2001185758A (ja) * | 2000-10-25 | 2001-07-06 | Toyoda Gosei Co Ltd | 3族窒化物化合物半導体発光素子 |
JP2005268725A (ja) * | 2004-03-22 | 2005-09-29 | Sony Corp | 半導体素子およびその製造方法 |
JP2006049829A (ja) * | 2004-06-29 | 2006-02-16 | Fuji Xerox Co Ltd | 表面発光型半導体レーザおよびその製造方法 |
JP2006339384A (ja) * | 2005-06-01 | 2006-12-14 | Kyocera Corp | 発光素子およびその製造方法ならびにその発光素子を用いた照明装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10173229A (ja) | 1996-12-09 | 1998-06-26 | Toyoda Gosei Co Ltd | 3族窒化物半導体発光素子の製造方法 |
TW595014B (en) * | 2002-12-05 | 2004-06-21 | Inst Nuclear Energy Res Aec | Manufacturing method of LED |
KR100593886B1 (ko) | 2003-06-24 | 2006-07-03 | 삼성전기주식회사 | 질화갈륨계 반도체 발광소자의 제조방법 |
US7033949B2 (en) * | 2003-12-29 | 2006-04-25 | Formosa Epitaxy Incorporation | Structure and manufacturing method for nitride-based light-emitting diodes |
US7352787B2 (en) * | 2004-06-29 | 2008-04-01 | Fuji Xerox Co., Ltd. | Vertical cavity surface emitting laser diode and process for producing the same |
TWI250671B (en) * | 2005-03-01 | 2006-03-01 | Epitech Technology Corp | Method for manufacturing light-emitting diode |
KR100652864B1 (ko) * | 2005-12-16 | 2006-12-04 | 서울옵토디바이스주식회사 | 개선된 투명전극 구조체를 갖는 교류용 발광 다이오드 |
TWI355096B (en) * | 2006-12-29 | 2011-12-21 | Epistar Corp | Light-emitting diode structure and method for manu |
KR100980649B1 (ko) * | 2008-05-20 | 2010-09-08 | 고려대학교 산학협력단 | 굴곡이 형성된 반사층을 포함하는 발광소자 및 그 제조방법 |
-
2010
- 2010-03-23 JP JP2010066087A patent/JP5195798B2/ja active Active
-
2011
- 2011-03-14 CN CN201180014812.6A patent/CN102812566B/zh active Active
- 2011-03-14 US US13/636,392 patent/US8936950B2/en active Active
- 2011-03-14 WO PCT/JP2011/001472 patent/WO2011118149A1/ja active Application Filing
- 2011-03-18 TW TW100109399A patent/TWI420698B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07130701A (ja) * | 1993-11-05 | 1995-05-19 | Fuji Electric Co Ltd | 透明導電膜のパターニング方法 |
JP2001185758A (ja) * | 2000-10-25 | 2001-07-06 | Toyoda Gosei Co Ltd | 3族窒化物化合物半導体発光素子 |
JP2005268725A (ja) * | 2004-03-22 | 2005-09-29 | Sony Corp | 半導体素子およびその製造方法 |
JP2006049829A (ja) * | 2004-06-29 | 2006-02-16 | Fuji Xerox Co Ltd | 表面発光型半導体レーザおよびその製造方法 |
JP2006339384A (ja) * | 2005-06-01 | 2006-12-14 | Kyocera Corp | 発光素子およびその製造方法ならびにその発光素子を用いた照明装置 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103178183A (zh) * | 2011-12-26 | 2013-06-26 | Lg伊诺特有限公司 | 发光器件 |
JP2013135234A (ja) * | 2011-12-26 | 2013-07-08 | Lg Innotek Co Ltd | 発光素子 |
US10128412B2 (en) | 2011-12-26 | 2018-11-13 | Lg Innotek Co., Ltd. | Light emitting device |
WO2014014300A3 (ko) * | 2012-07-18 | 2014-03-13 | 주식회사 세미콘라이트 | 반도체 발광소자 |
US9236524B2 (en) | 2012-07-18 | 2016-01-12 | Semicon Light Co., Ltd. | Method of manufacturing semiconductor light emitting device |
US9530941B2 (en) | 2012-07-18 | 2016-12-27 | Semicon Light Co., Ltd. | Semiconductor light emitting device |
US10535798B2 (en) | 2012-07-18 | 2020-01-14 | Semicon Light Co., Ltd. | Semiconductor light emitting device comprising finger electrodes |
JP2016531425A (ja) * | 2013-07-25 | 2016-10-06 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | オプトエレクトロニクス半導体チップ、半導体部品、および、オプトエレクトロニクス半導体チップの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102812566B (zh) | 2015-05-06 |
TWI420698B (zh) | 2013-12-21 |
US8936950B2 (en) | 2015-01-20 |
WO2011118149A1 (ja) | 2011-09-29 |
TW201205857A (en) | 2012-02-01 |
CN102812566A (zh) | 2012-12-05 |
US20130011953A1 (en) | 2013-01-10 |
JP5195798B2 (ja) | 2013-05-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5195798B2 (ja) | 半導体発光素子の製造方法 | |
JP4123828B2 (ja) | 半導体発光素子 | |
KR100833313B1 (ko) | 질화갈륨계 발광다이오드 소자 및 그의 제조방법 | |
JP4699258B2 (ja) | フリップチップ発光ダイオード及びその製造方法 | |
KR100609118B1 (ko) | 플립 칩 발광다이오드 및 그 제조방법 | |
CN102201515B (zh) | 半导体发光器件 | |
US20130292645A1 (en) | High efficiency light emitting diode | |
JP2005347728A (ja) | フリップチップ用窒化物半導体発光素子 | |
KR101537330B1 (ko) | 질화물 반도체 발광 소자 제조 방법 | |
JP2008294188A (ja) | 半導体発光素子及びその製造方法 | |
JP2006108161A (ja) | 半導体発光素子 | |
US9281341B2 (en) | Light emitting device and fabricating method thereof | |
TWI741608B (zh) | 包含鈍化層的led前驅物 | |
JP2011238744A (ja) | 半導体発光素子及び発光装置 | |
JP4292925B2 (ja) | Iii族窒化物系化合物半導体発光素子の製造方法 | |
JP5900400B2 (ja) | Iii族窒化物半導体発光素子の製造方法 | |
JP2009038355A (ja) | 発光装置 | |
KR20110139909A (ko) | 질화물 반도체 발광소자의 제조방법 및 이에 의해 제조된 질화물 반도체 발광소자 | |
CN110061111A (zh) | 发光元件及其制造方法 | |
JP2011159801A (ja) | 半導体発光素子及びその製造方法、並びにランプ | |
JP5434343B2 (ja) | Ito電極の形成方法、半導体素子のito電極及びito電極を備えた半導体素子 | |
US10971648B2 (en) | Ultraviolet light-emitting element and light-emitting element package | |
JP2004356442A (ja) | Iii族窒化物系化合物半導体発光素子 | |
KR102376672B1 (ko) | 발광소자 및 발광소자 패키지 | |
KR20090115830A (ko) | 수직구조의 그룹 3족 질화물계 반도체 발광다이오드 소자및 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120322 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130108 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130121 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160215 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5195798 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |