JP2011193030A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2011193030A5 JP2011193030A5 JP2011147906A JP2011147906A JP2011193030A5 JP 2011193030 A5 JP2011193030 A5 JP 2011193030A5 JP 2011147906 A JP2011147906 A JP 2011147906A JP 2011147906 A JP2011147906 A JP 2011147906A JP 2011193030 A5 JP2011193030 A5 JP 2011193030A5
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting device
- wavelength conversion
- wavelength converting
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims 16
- 238000000034 method Methods 0.000 claims 16
- 239000007787 solid Substances 0.000 claims 6
- 239000000463 material Substances 0.000 claims 4
- 239000004593 Epoxy Substances 0.000 claims 3
- 239000011521 glass Substances 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US52805403P | 2003-12-09 | 2003-12-09 | |
| US60/528,054 | 2003-12-09 | ||
| US10/987,894 | 2004-11-12 | ||
| US10/987,894 US7518158B2 (en) | 2003-12-09 | 2004-11-12 | Semiconductor light emitting devices and submounts |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006543856A Division JP4870572B2 (ja) | 2003-12-09 | 2004-11-24 | 半導体発光デバイスおよびサブマウント、ならびにそれを形成するための方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011193030A JP2011193030A (ja) | 2011-09-29 |
| JP2011193030A5 true JP2011193030A5 (cg-RX-API-DMAC7.html) | 2012-01-12 |
Family
ID=34636672
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006543856A Expired - Fee Related JP4870572B2 (ja) | 2003-12-09 | 2004-11-24 | 半導体発光デバイスおよびサブマウント、ならびにそれを形成するための方法 |
| JP2011147906A Pending JP2011193030A (ja) | 2003-12-09 | 2011-07-04 | 半導体発光デバイスおよびサブマウント、ならびにそれを形成するための方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006543856A Expired - Fee Related JP4870572B2 (ja) | 2003-12-09 | 2004-11-24 | 半導体発光デバイスおよびサブマウント、ならびにそれを形成するための方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US7518158B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP1692729B1 (cg-RX-API-DMAC7.html) |
| JP (2) | JP4870572B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR101097694B1 (cg-RX-API-DMAC7.html) |
| CA (1) | CA2547832A1 (cg-RX-API-DMAC7.html) |
| TW (1) | TW200531312A (cg-RX-API-DMAC7.html) |
| WO (1) | WO2005062393A2 (cg-RX-API-DMAC7.html) |
Families Citing this family (87)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8545629B2 (en) | 2001-12-24 | 2013-10-01 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
| US20060005763A1 (en) * | 2001-12-24 | 2006-01-12 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
| US7638346B2 (en) * | 2001-12-24 | 2009-12-29 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
| US7518158B2 (en) | 2003-12-09 | 2009-04-14 | Cree, Inc. | Semiconductor light emitting devices and submounts |
| EP1587151A3 (en) * | 2004-04-17 | 2011-09-28 | LG Electronics, Inc. | Semiconductor light emitting device and fabrication method thereof |
| US8154030B2 (en) * | 2004-10-01 | 2012-04-10 | Finisar Corporation | Integrated diode in a silicon chip scale package |
| TW200637033A (en) * | 2004-11-22 | 2006-10-16 | Matsushita Electric Industrial Co Ltd | Light-emitting device, light-emitting module, display unit, lighting unit and method for manufacturing light-emitting device |
| US20100301349A1 (en) * | 2005-01-26 | 2010-12-02 | Harvatek Corporation | Wafer level led package structure for increasing light-emitting efficiency and heat-dissipating effect and method for manufacturing the same |
| US20060258031A1 (en) * | 2005-01-26 | 2006-11-16 | Bily Wang | Wafer-level electro-optical semiconductor manufacture fabrication method |
| US7719021B2 (en) * | 2005-06-28 | 2010-05-18 | Lighting Science Group Corporation | Light efficient LED assembly including a shaped reflective cavity and method for making same |
| WO2007002476A2 (en) * | 2005-06-28 | 2007-01-04 | Lamina Ceramics, Inc. | Backlight module display with optical coupler and lightguide |
| CN100405621C (zh) * | 2005-09-29 | 2008-07-23 | 上海乐金广电电子有限公司 | 白色光源的制造方法 |
| US7641735B2 (en) * | 2005-12-02 | 2010-01-05 | Crystal Is, Inc. | Doped aluminum nitride crystals and methods of making them |
| JP2007165811A (ja) | 2005-12-16 | 2007-06-28 | Nichia Chem Ind Ltd | 発光装置 |
| US8044412B2 (en) | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
| US7528422B2 (en) * | 2006-01-20 | 2009-05-05 | Hymite A/S | Package for a light emitting element with integrated electrostatic discharge protection |
| US7928462B2 (en) * | 2006-02-16 | 2011-04-19 | Lg Electronics Inc. | Light emitting device having vertical structure, package thereof and method for manufacturing the same |
| KR100746783B1 (ko) * | 2006-02-28 | 2007-08-06 | 엘지전자 주식회사 | 발광소자 패키지 및 그 제조방법 |
| TWI303872B (en) * | 2006-03-13 | 2008-12-01 | Ind Tech Res Inst | High power light emitting device assembly with esd preotection ability and the method of manufacturing the same |
| EP2918708B1 (en) * | 2006-03-30 | 2019-10-30 | Crystal Is, Inc. | Method for annealing of aluminium nitride wafer |
| US9034103B2 (en) * | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
| KR101314713B1 (ko) * | 2006-06-16 | 2013-10-07 | 신꼬오덴기 고교 가부시키가이샤 | 반도체 장치, 그 제조 방법, 및 기판 |
| KR100854328B1 (ko) * | 2006-07-07 | 2008-08-28 | 엘지전자 주식회사 | 발광 소자 패키지 및 그 제조방법 |
| KR100845856B1 (ko) | 2006-12-21 | 2008-07-14 | 엘지전자 주식회사 | 발광 소자 패키지 및 그 제조방법 |
| DE102007001706A1 (de) * | 2007-01-11 | 2008-07-17 | Osram Opto Semiconductors Gmbh | Gehäuse für optoelektronisches Bauelement und Anordnung eines optoelektronischen Bauelementes in einem Gehäuse |
| CN107059116B (zh) | 2007-01-17 | 2019-12-31 | 晶体公司 | 引晶的氮化铝晶体生长中的缺陷减少 |
| US9771666B2 (en) | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US8080833B2 (en) | 2007-01-26 | 2011-12-20 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
| CN101652832B (zh) * | 2007-01-26 | 2011-06-22 | 晶体公司 | 厚的赝晶氮化物外延层 |
| EP1988577B1 (en) * | 2007-04-30 | 2017-04-05 | Tridonic Jennersdorf GmbH | Light emitting diode module with silicon platform |
| US8088220B2 (en) | 2007-05-24 | 2012-01-03 | Crystal Is, Inc. | Deep-eutectic melt growth of nitride crystals |
| US8436371B2 (en) * | 2007-05-24 | 2013-05-07 | Cree, Inc. | Microscale optoelectronic device packages |
| US7791096B2 (en) * | 2007-06-08 | 2010-09-07 | Koninklijke Philips Electronics N.V. | Mount for a semiconductor light emitting device |
| TWM327545U (en) * | 2007-07-09 | 2008-02-21 | Everlight Electronics Co Ltd | Improved light-emitting diode packaging structure |
| JP4809308B2 (ja) * | 2007-09-21 | 2011-11-09 | 新光電気工業株式会社 | 基板の製造方法 |
| JP4961617B2 (ja) * | 2007-10-01 | 2012-06-27 | 新光電気工業株式会社 | 配線基板とその製造方法及び半導体装置 |
| KR100896282B1 (ko) * | 2007-11-01 | 2009-05-08 | 엘지전자 주식회사 | 발광 소자 패키지 및 그 제조방법 |
| US8536584B2 (en) * | 2007-11-14 | 2013-09-17 | Cree, Inc. | High voltage wire bond free LEDS |
| US7985970B2 (en) * | 2009-04-06 | 2011-07-26 | Cree, Inc. | High voltage low current surface-emitting LED |
| KR100999760B1 (ko) * | 2008-09-26 | 2010-12-08 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
| US20100176507A1 (en) * | 2009-01-14 | 2010-07-15 | Hymite A/S | Semiconductor-based submount with electrically conductive feed-throughs |
| KR101064026B1 (ko) * | 2009-02-17 | 2011-09-08 | 엘지이노텍 주식회사 | 발광 디바이스 패키지 및 그 제조방법 |
| US9093293B2 (en) | 2009-04-06 | 2015-07-28 | Cree, Inc. | High voltage low current surface emitting light emitting diode |
| US8476668B2 (en) * | 2009-04-06 | 2013-07-02 | Cree, Inc. | High voltage low current surface emitting LED |
| US20100314551A1 (en) * | 2009-06-11 | 2010-12-16 | Bettles Timothy J | In-line Fluid Treatment by UV Radiation |
| US8084780B2 (en) * | 2009-08-13 | 2011-12-27 | Semileds Optoelectronics Co. | Smart integrated semiconductor light emitting system including light emitting diodes and application specific integrated circuits (ASIC) |
| US9214456B2 (en) | 2009-08-13 | 2015-12-15 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diode (LED) system having lighting device and wireless control system |
| US8933467B2 (en) | 2009-08-13 | 2015-01-13 | SemiLEDs Optoelectronics Co., Ltd. | Smart integrated semiconductor light emitting system including nitride based light emitting diodes (LED) and application specific integrated circuits (ASIC) |
| US20110042803A1 (en) * | 2009-08-24 | 2011-02-24 | Chen-Fu Chu | Method For Fabricating A Through Interconnect On A Semiconductor Substrate |
| KR101092097B1 (ko) * | 2009-08-31 | 2011-12-12 | 엘지이노텍 주식회사 | 발광 다이오드 패키지 및 그 제조방법 |
| US7893445B2 (en) * | 2009-11-09 | 2011-02-22 | Cree, Inc. | Solid state emitter package including red and blue emitters |
| DE102009053064A1 (de) * | 2009-11-13 | 2011-05-19 | Osram Opto Semiconductors Gmbh | Dünnfilm-Halbleiterbauelement mit Schutzdiodenstruktur und Verfahren zur Herstellung eines Dünnfilm-Halbleiterbauelements |
| US20110175218A1 (en) * | 2010-01-18 | 2011-07-21 | Shiann-Ming Liou | Package assembly having a semiconductor substrate |
| US20110186960A1 (en) | 2010-02-03 | 2011-08-04 | Albert Wu | Techniques and configurations for recessed semiconductor substrates |
| EP2588651B1 (en) | 2010-06-30 | 2020-01-08 | Crystal Is, Inc. | Growth of large aluminum nitride single crystals with thermal-gradient control |
| CN203260631U (zh) * | 2010-07-01 | 2013-10-30 | 西铁城控股株式会社 | Led光源装置 |
| DE102010027679A1 (de) * | 2010-07-20 | 2012-01-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
| WO2012016377A1 (en) | 2010-08-03 | 2012-02-09 | Industrial Technology Research Institute | Light emitting diode chip, light emitting diode package structure, and method for forming the same |
| US8455882B2 (en) | 2010-10-15 | 2013-06-04 | Cree, Inc. | High efficiency LEDs |
| CN102456802A (zh) * | 2010-10-19 | 2012-05-16 | 展晶科技(深圳)有限公司 | 发光二极管封装结构的制造方法 |
| US9022608B2 (en) | 2010-11-23 | 2015-05-05 | Q Technology, Inc. | Unlit LED circuit bypass element with system and method therefor |
| US8772817B2 (en) | 2010-12-22 | 2014-07-08 | Cree, Inc. | Electronic device submounts including substrates with thermally conductive vias |
| KR101761834B1 (ko) | 2011-01-28 | 2017-07-27 | 서울바이오시스 주식회사 | 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 |
| KR101766297B1 (ko) * | 2011-02-16 | 2017-08-08 | 삼성전자 주식회사 | 발광소자 패키지 및 그 제조방법 |
| US8962359B2 (en) | 2011-07-19 | 2015-02-24 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
| KR20130011088A (ko) * | 2011-07-20 | 2013-01-30 | 삼성전자주식회사 | 발광소자 패키지 및 그 제조방법 |
| CN103782400A (zh) * | 2011-07-25 | 2014-05-07 | 克里公司 | 包括多组发光二极管的单片多结发光装置 |
| WO2013027413A1 (ja) * | 2011-08-25 | 2013-02-28 | パナソニック株式会社 | 保護素子及びこれを用いた発光装置 |
| TWI449466B (zh) | 2011-12-26 | 2014-08-11 | Ind Tech Res Inst | 發光裝置 |
| JP2014067934A (ja) * | 2012-09-27 | 2014-04-17 | Murata Mfg Co Ltd | 実装基板の製造方法および実装基板 |
| CN108511567A (zh) | 2013-03-15 | 2018-09-07 | 晶体公司 | 与赝配电子和光电器件的平面接触 |
| DE102013105631A1 (de) * | 2013-05-31 | 2014-12-04 | Osram Opto Semiconductors Gmbh | Träger für einen optoelektronischen Halbleiterchip und optoelektronisches Bauteil |
| JP6454698B2 (ja) * | 2013-06-28 | 2019-01-16 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 発光ダイオードデバイス |
| KR102130524B1 (ko) * | 2013-08-28 | 2020-07-07 | 삼성디스플레이 주식회사 | 발광 소자 모듈, 이를 포함하는 백라이트 유닛 및 이를 포함하는 액정 표시 장치 |
| DE102013110853B4 (de) * | 2013-10-01 | 2020-12-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung von strahlungsemittierenden Halbleiterchips |
| JP6539035B2 (ja) * | 2014-01-08 | 2019-07-03 | ローム株式会社 | チップ部品 |
| US20150303179A1 (en) * | 2014-04-18 | 2015-10-22 | Toshiba Corporation | Light Emitting Diode Assembly With Integrated Circuit Element |
| TWM488746U (zh) * | 2014-07-14 | 2014-10-21 | 新世紀光電股份有限公司 | 發光模組 |
| US20170104135A1 (en) * | 2015-10-13 | 2017-04-13 | Sensor Electronic Technology, Inc. | Light Emitting Diode Mounting Structure |
| WO2018200685A2 (en) | 2017-04-27 | 2018-11-01 | Ecosense Lighting Inc. | Methods and systems for an automated design, fulfillment, deployment and operation platform for lighting installations |
| KR102667851B1 (ko) * | 2016-02-22 | 2024-05-23 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
| US10522532B2 (en) * | 2016-05-27 | 2019-12-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Through via extending through a group III-V layer |
| WO2018022061A1 (en) * | 2016-07-28 | 2018-02-01 | Victor Equipment Company | Fuel tip with integrated flashback arrestor |
| CN107369677A (zh) * | 2017-08-10 | 2017-11-21 | 中国科学院福建物质结构研究所 | 一种集成封装的三基色led器件及其制作方法和用途 |
| CN110164857B (zh) * | 2018-02-14 | 2024-04-09 | 晶元光电股份有限公司 | 发光装置 |
| US10770636B2 (en) * | 2018-02-14 | 2020-09-08 | Epistar Corporation | Light emitting device and manufacturing method thereof |
| DE102020126391A1 (de) | 2020-10-08 | 2022-04-14 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Led package für uv licht und verfahren |
Family Cites Families (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR880014692A (ko) | 1987-05-30 | 1988-12-24 | 강진구 | 반사경이 부착된 반도체 발광장치 |
| US4918497A (en) | 1988-12-14 | 1990-04-17 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
| US5027168A (en) | 1988-12-14 | 1991-06-25 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
| US4966862A (en) | 1989-08-28 | 1990-10-30 | Cree Research, Inc. | Method of production of light emitting diodes |
| US5210051A (en) | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
| US5416342A (en) | 1993-06-23 | 1995-05-16 | Cree Research, Inc. | Blue light-emitting diode with high external quantum efficiency |
| US5338944A (en) | 1993-09-22 | 1994-08-16 | Cree Research, Inc. | Blue light-emitting diode with degenerate junction structure |
| US5393993A (en) | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
| US5604135A (en) | 1994-08-12 | 1997-02-18 | Cree Research, Inc. | Method of forming green light emitting diode in silicon carbide |
| US5523589A (en) | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
| US5631190A (en) | 1994-10-07 | 1997-05-20 | Cree Research, Inc. | Method for producing high efficiency light-emitting diodes and resulting diode structures |
| US5739554A (en) | 1995-05-08 | 1998-04-14 | Cree Research, Inc. | Double heterojunction light emitting diode with gallium nitride active layer |
| KR100734122B1 (ko) | 1996-06-26 | 2007-06-29 | 오스람 게젤샤프트 미트 베쉬랭크터 하프퉁 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
| JPH1074986A (ja) | 1996-06-27 | 1998-03-17 | Natl Aerospace Lab | 熱電変換素子、π型熱電変換素子対および熱電変換モジュールの各製造方法 |
| JP3196823B2 (ja) | 1997-06-11 | 2001-08-06 | 日本電気株式会社 | 半導体装置 |
| US6201262B1 (en) | 1997-10-07 | 2001-03-13 | Cree, Inc. | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
| JPH11251644A (ja) * | 1998-02-27 | 1999-09-17 | Matsushita Electron Corp | 半導体発光装置 |
| JP3893735B2 (ja) * | 1998-04-24 | 2007-03-14 | 松下電器産業株式会社 | 発光装置 |
| JP4042213B2 (ja) * | 1998-06-05 | 2008-02-06 | 松下電器産業株式会社 | フルカラー半導体発光装置 |
| JP2001015815A (ja) * | 1999-04-28 | 2001-01-19 | Sanken Electric Co Ltd | 半導体発光装置 |
| JP4350232B2 (ja) * | 1999-10-05 | 2009-10-21 | 株式会社朝日ラバー | 蛍光被覆体製造支援方法、及びその製造支援システム |
| US6303509B1 (en) * | 1999-10-29 | 2001-10-16 | Taiwan Semiconductor Manufacturing Company | Method to calibrate the wafer transfer for oxide etcher (with clamp) |
| JP2002190622A (ja) | 2000-12-22 | 2002-07-05 | Sanken Electric Co Ltd | 発光ダイオード用透光性蛍光カバー |
| US6747406B1 (en) | 2000-08-07 | 2004-06-08 | General Electric Company | LED cross-linkable phospor coating |
| US6635363B1 (en) | 2000-08-21 | 2003-10-21 | General Electric Company | Phosphor coating with self-adjusting distance from LED chip |
| US20020063520A1 (en) | 2000-11-29 | 2002-05-30 | Huei-Che Yu | Pre-formed fluorescent plate - LED device |
| JP5110744B2 (ja) | 2000-12-21 | 2012-12-26 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | 発光装置及びその製造方法 |
| US20020084749A1 (en) * | 2000-12-28 | 2002-07-04 | Ayala Raul E. | UV reflecting materials for LED lamps using UV-emitting diodes |
| JP2002220350A (ja) | 2001-01-24 | 2002-08-09 | Toshiba Corp | 有害塩素化合物処理方法および処理装置 |
| JP4737842B2 (ja) | 2001-01-30 | 2011-08-03 | 京セラ株式会社 | 発光素子収納用パッケージの製造方法 |
| US6791119B2 (en) | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
| TW490863B (en) * | 2001-02-12 | 2002-06-11 | Arima Optoelectronics Corp | Manufacturing method of LED with uniform color temperature |
| JP2002314143A (ja) | 2001-04-09 | 2002-10-25 | Toshiba Corp | 発光装置 |
| US6958497B2 (en) | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
| US20030102473A1 (en) * | 2001-08-15 | 2003-06-05 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate |
| US6531328B1 (en) * | 2001-10-11 | 2003-03-11 | Solidlite Corporation | Packaging of light-emitting diode |
| US7858403B2 (en) * | 2001-10-31 | 2010-12-28 | Cree, Inc. | Methods and systems for fabricating broad spectrum light emitting devices |
| US6791116B2 (en) * | 2002-04-30 | 2004-09-14 | Toyoda Gosei Co., Ltd. | Light emitting diode |
| JP2003347601A (ja) | 2002-05-28 | 2003-12-05 | Matsushita Electric Works Ltd | 発光ダイオード照明装置 |
| US6642550B1 (en) * | 2002-08-26 | 2003-11-04 | California Micro Devices | Silicon sub-mount capable of single wire bonding and of providing ESD protection for light emitting diode devices |
| US7244965B2 (en) * | 2002-09-04 | 2007-07-17 | Cree Inc, | Power surface mount light emitting die package |
| US7264378B2 (en) | 2002-09-04 | 2007-09-04 | Cree, Inc. | Power surface mount light emitting die package |
| CA2495149A1 (en) | 2002-09-19 | 2004-04-01 | Cree, Inc. | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
| JP4201167B2 (ja) * | 2002-09-26 | 2008-12-24 | シチズン電子株式会社 | 白色発光装置の製造方法 |
| US6936857B2 (en) * | 2003-02-18 | 2005-08-30 | Gelcore, Llc | White light LED device |
| US6876008B2 (en) * | 2003-07-31 | 2005-04-05 | Lumileds Lighting U.S., Llc | Mount for semiconductor light emitting device |
| US7518158B2 (en) * | 2003-12-09 | 2009-04-14 | Cree, Inc. | Semiconductor light emitting devices and submounts |
| US7553683B2 (en) * | 2004-06-09 | 2009-06-30 | Philips Lumiled Lighting Co., Llc | Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices |
| JP2006012868A (ja) * | 2004-06-22 | 2006-01-12 | Toshiba Corp | 半導体発光素子用パッケージおよびそれを用いた半導体発光装置 |
| JP4862274B2 (ja) * | 2005-04-20 | 2012-01-25 | パナソニック電工株式会社 | 発光装置の製造方法及び該発光装置を用いた発光装置ユニットの製造方法 |
| JP4980640B2 (ja) * | 2006-03-31 | 2012-07-18 | 三洋電機株式会社 | 照明装置 |
-
2004
- 2004-11-12 US US10/987,894 patent/US7518158B2/en active Active
- 2004-11-24 JP JP2006543856A patent/JP4870572B2/ja not_active Expired - Fee Related
- 2004-11-24 EP EP04812190.9A patent/EP1692729B1/en not_active Expired - Lifetime
- 2004-11-24 WO PCT/US2004/039619 patent/WO2005062393A2/en not_active Ceased
- 2004-11-24 CA CA002547832A patent/CA2547832A1/en not_active Abandoned
- 2004-12-09 TW TW093138180A patent/TW200531312A/zh unknown
-
2006
- 2006-06-07 KR KR1020067011189A patent/KR101097694B1/ko not_active Expired - Fee Related
-
2009
- 2009-03-04 US US12/397,555 patent/US8138000B2/en not_active Expired - Lifetime
-
2011
- 2011-07-04 JP JP2011147906A patent/JP2011193030A/ja active Pending
-
2012
- 2012-02-14 US US13/372,765 patent/US8847257B2/en not_active Expired - Lifetime
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2011193030A5 (cg-RX-API-DMAC7.html) | ||
| WO2012154665A3 (en) | Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources | |
| RU2009127111A (ru) | Источник света с регулируемой точкой белого, в котором применяется элемент преобразования длины волны | |
| WO2009123726A3 (en) | Emission tuning methods and devices fabricated utilizing methods | |
| WO2010144213A3 (en) | Integrated circuit light emission device, module and fabrication process | |
| WO2011112914A3 (en) | Scattered-photon extraction-based light fixtures | |
| RU2012108576A (ru) | Сид с силиконовым слоем и листовым отдаленным слоем люминофора | |
| WO2009088410A3 (en) | Light emitting devices with high efficiency phospor structures | |
| EP2620989A3 (en) | Semiconductor light-emitting device and manufacturing method | |
| DE602006011204D1 (de) | Leuchtstoff enthaltender Laminatfilm zur Verkapselung von LEDs | |
| JP2014187398A5 (cg-RX-API-DMAC7.html) | ||
| JP2015515133A5 (cg-RX-API-DMAC7.html) | ||
| EP2445021A3 (en) | Lighting emitting diode (LED) package and method of fabrication | |
| TW200733436A (en) | Light emitting diode package structure and fabrication method thereof | |
| RU2009148312A (ru) | Устройство освещения с элементом преобразования длины волны, поддерживаемым посредством опорной конструкции, имеющей апертуру | |
| WO2008030703A3 (en) | Coating process | |
| EP2575185A3 (en) | Semiconductor light-emitting device and manufacturing method of the same | |
| WO2013083528A3 (de) | Halbleiterleuchte | |
| EP2309558A3 (en) | Light emitting diode and manufacturing method thereof | |
| KR20140005389U (ko) | 2칩 발광 다이오드 | |
| TW201208156A (en) | Light emitting diode package, light emitting diode module, and light emitting diode lamp | |
| EP2672168A3 (en) | Lighting apparatus | |
| WO2008030587A3 (en) | Small footprint high power light emitting package with plurality of light emitting diode chips | |
| KR20120035821A (ko) | 보색 광원 장치 | |
| KR102154061B1 (ko) | 발광 소자 패키지 및 이를 포함하는 조명 장치 |