JP2011181920A - 干渉を抑えたレーザダイオード装置 - Google Patents
干渉を抑えたレーザダイオード装置 Download PDFInfo
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- 230000003287 optical effect Effects 0.000 claims abstract description 91
- 238000001514 detection method Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 14
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 8
- 230000005855 radiation Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000002411 adverse Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02253—Out-coupling of light using lenses
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/39—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
- G01N2021/396—Type of laser source
- G01N2021/399—Diode laser
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/02—ASE (amplified spontaneous emission), noise; Reduction thereof
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02255—Out-coupling of light using beam deflecting elements
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0656—Seeding, i.e. an additional light input is provided for controlling the laser modes, for example by back-reflecting light from an external optical component
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
Abstract
【解決手段】レーザダイオード装置1は、レーザビーム7を生成するレーザダイオード6並びに底部4及びレーザビーム7を外へ放射するウィンドウ5を含んで構成される密閉されたハウジング2を備え、ハウジング2にはレーザダイオード6、電気接続系3、レーザダイオード6の温度制御装置9、レーザビーム7を伝達し且つ/又はレーザビーム7の形状を調整する光学素子10及び光学素子10の駆動機構14が備えられている。レーザダイオード6は、ハウジング2の底部4に装着された温度制御装置9に担持され且つ光学素子10はレーザダイオード6から所定の光路長15を隔てて配置され、駆動機構14が光学素子10のレーザダイオード6に対する位置及び/又は整列状態を周期的に変化させて光路長15を周期的に変化させる。
【選択図】図1
Description
前記レーザダイオードは、前記ハウジングの底部に装着された前記温度制御装置に担持され且つ前記光学素子は前記レーザダイオードから所定の光路長を隔てて配置され、
前記駆動機構が前記光学素子の前記レーザダイオードに対する位置及び/又は整列状態を周期的に変化させて前記光路長を周期的に変化させることを特徴とするレーザダイオード装置。
2 ハウジング
3 電気的接続部
4 底部
5 ウィンドウ
6、6′ レーザダイオードチップ
7 レーザビーム
8 (レーザダイオードチップの)開口
9 ペルチエ素子(温度制御装置)
10 コリメータレンズ(光学素子)
11 (レーザビームの)放射方向
12 アクチュエータ
13 カンチレバー
14 駆動機構
15 光路長
16 くさび
17 偏向ミラー
18 保持部材
Claims (10)
- ガス検出に用いるレーザビームを生成するレーザダイオード並びに底部及び前記レーザビームを外へ放射するウィンドウを含んで構成される密閉されたハウジングを備え、前記ハウジングには前記レーザダイオード、電気接続系、前記レーザダイオードの温度制御装置、前記レーザビームを伝達し且つ/又は前記レーザビームの形状を調整する光学素子及び該光学素子の駆動機構が備えられ、
前記レーザダイオードは、前記ハウジングの底部に装着された前記温度制御装置に担持され且つ前記光学素子は前記レーザダイオードから所定の光路長を隔てて配置され、
前記駆動機構が前記光学素子の前記レーザダイオードに対する位置及び/又は整列状態を周期的に変化させて前記光路長を周期的に変化させることを特徴とするレーザダイオード装置。 - 前記光学素子は、コリメータレンズであることを特徴とする請求項1に記載のレーザダイオード装置。
- 前記光学素子は、光学的な回折素子であることを特徴とする請求項1に記載のレーザダイオード装置。
- 前記光学素子は、レーザビームを伝達する偏向ミラーであることを特徴とする請求項1に記載のレーザダイオード装置。
- 前記駆動機構は、アクチュエータを有し、該アクチュエータを介して前記光学素子が前記底部に結合されていることを特徴とする請求項1に記載のレーザダイオード装置。
- 前記アクチュエータにより、前記光学素子が移動、回転又は旋回されることを特徴とする請求項5に記載のレーザダイオード装置。
- 前記駆動機構の制御系により、直流電圧及び/又は交流電圧が前記アクチュエータに印加されることを特徴とする請求項5又は請求項6に記載のレーザダイオード装置。
- 前記制御系は、前記交流電圧の振幅、周波数及び/又は波形を変化させることを特徴とする請求項7に記載のレーザダイオード装置。
- 前記アクチュエータは、圧電振動式、電気機械式、静電式又は温度制御式の駆動装置であることを特徴とする請求項5ないし請求項7のいずれか1項に記載のレーザダイオード装置。
- 前記ウィンドウ及び/又は前記光学素子は光軸を有し、その光軸は前記レーザダイオードの開口の光軸に対して傾斜していることを特徴とする請求項1に記載のレーザダイオード装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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EP10002153A EP2363928B1 (de) | 2010-03-03 | 2010-03-03 | Laserdiodenaufbau mit reduziertem Rauschen |
EP10002153.4 | 2010-03-03 |
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JP2011181920A true JP2011181920A (ja) | 2011-09-15 |
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US (1) | US8199786B2 (ja) |
EP (1) | EP2363928B1 (ja) |
JP (1) | JP5701636B2 (ja) |
CN (1) | CN102195233B (ja) |
AT (1) | ATE551761T1 (ja) |
Cited By (3)
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JP2016142738A (ja) * | 2015-02-04 | 2016-08-08 | アクセトリス アクチエンゲゼルシャフトAxetris AG | 光学式測定システムおよび気体検出方法 |
WO2017199721A1 (ja) * | 2016-05-16 | 2017-11-23 | 国立大学法人京都工芸繊維大学 | 吸収分光測定用の光吸収測定装置およびこれを用いた吸収分光測定システム |
JP2019526785A (ja) * | 2016-06-13 | 2019-09-19 | ヴィクサー,エルエルシー | フィルタを利用した自己混合モジュールの改良 |
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DE102010010428B4 (de) * | 2010-03-05 | 2012-07-19 | Adc Gmbh | Anschluss-Box für Glasfaserkabel |
DE102010003034A1 (de) * | 2010-03-18 | 2011-09-22 | Vertilas Gmbh | Leuchteinheit |
DE102011082466B3 (de) * | 2011-09-09 | 2012-10-31 | Siemens Ag | Laserspektrometer |
US8897327B2 (en) * | 2012-04-16 | 2014-11-25 | Osram Opto Semiconductors Gmbh | Laser diode devices |
US10203399B2 (en) | 2013-11-12 | 2019-02-12 | Big Sky Financial Corporation | Methods and apparatus for array based LiDAR systems with reduced interference |
US9360554B2 (en) | 2014-04-11 | 2016-06-07 | Facet Technology Corp. | Methods and apparatus for object detection and identification in a multiple detector lidar array |
US10036801B2 (en) | 2015-03-05 | 2018-07-31 | Big Sky Financial Corporation | Methods and apparatus for increased precision and improved range in a multiple detector LiDAR array |
US10741998B2 (en) * | 2015-10-07 | 2020-08-11 | General Electric Company | Thermal-mechanical adjustment for laser system |
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2011
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2016142738A (ja) * | 2015-02-04 | 2016-08-08 | アクセトリス アクチエンゲゼルシャフトAxetris AG | 光学式測定システムおよび気体検出方法 |
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JP2019526785A (ja) * | 2016-06-13 | 2019-09-19 | ヴィクサー,エルエルシー | フィルタを利用した自己混合モジュールの改良 |
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Also Published As
Publication number | Publication date |
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EP2363928A1 (de) | 2011-09-07 |
EP2363928B1 (de) | 2012-03-28 |
ATE551761T1 (de) | 2012-04-15 |
US20110216793A1 (en) | 2011-09-08 |
US8199786B2 (en) | 2012-06-12 |
CN102195233A (zh) | 2011-09-21 |
CN102195233B (zh) | 2013-08-14 |
JP5701636B2 (ja) | 2015-04-15 |
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