JP7187324B2 - フィルタを利用した自己混合モジュールの改良 - Google Patents
フィルタを利用した自己混合モジュールの改良 Download PDFInfo
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Description
[001] 本願は、2016年6月13日に出願され "Improved Self-Mix Module Utilizing Filters"(フィルタを利用した自己混合モジュールの改良)と題する米国仮特許出願第62/349,123号の権利および優先権を主張する。この特許出願をここで引用したことにより、その内容全体が本願にも含まれるものとする。
[002] 本発明の開示は、信号の処理、およびレーザ自己混合のメカニズムに基づくセンサに関する。また、センサのためにパッケージングを改良する手段も開示する。
Claims (21)
- レーザ発光用センサ・デバイスであって、
少なくとも1つのアパーチャから光を放射する少なくとも1つの部分底面発光VCSELレーザであって、キャビティと、上面ミラーと、底面ミラーとを含む、部分底面発光VCSELレーザと、
検出器と、
前記キャビティに対して固定位置にあるフィルタであって、前記フィルタが波長フィルタであるフィルタと、
前記レーザによって放射された光の一部を標的面上にほぼ合焦し、前記標的面から反射された任意の光の一部を戻して前記レーザ・キャビティ内に結合するための第1光学レンズと、
を含み、
第1光路が、前記レーザから放射された光の第1部分を、前記レーザと、前記第1光学レンズと、前記標的面との間で搬送し、第2光路が、前記レーザから放射された光の第2部分を、前記レーザと前記検出器との間で搬送し、
前記標的面が前記第1光路内のみに配置され、
前記フィルタが前記レーザと前記検出器との間における少なくとも前記第2光路内に配置され、前記フィルタは、前記光の前記第2部分における信号の振幅を強調させる、センサ・デバイス。 - 請求項1記載のセンサ・デバイスにおいて、前記フィルタが、前記第1光路および前記第2光路内に配置される、センサ・デバイス。
- 請求項1又は2記載のセンサ・デバイスにおいて、前記検出器が、前記レーザと同じ基板上に成長する、センサ・デバイス。
- 請求項1記載のセンサ・デバイスにおいて、前記フィルタが格子またはエタロンの内1つである、センサ・デバイス。
- 請求項1記載のセンサ・デバイスにおいて、前記レーザが、光を放射するための複数のアパーチャを有する、センサ・デバイス。
- 請求項1記載のセンサ・デバイスであって、更に、前記レーザ発光の一部をサンプリングし、それを前記検出器に向ける手段を含む、センサ・デバイス。
- 請求項6記載のセンサ・デバイスにおいて、前記サンプリング手段がビーム・スプリッタである、センサ・デバイス。
- 請求項7記載のセンサ・デバイスにおいて、前記ビーム・スプリッタが、前記レーザの光軸に対してある角度に位置付けられる、センサ・デバイス。
- パッケージ化センサ・デバイスであって、
筐体と、
少なくとも1つのミラーと基板とを有し、アパーチャから光を放射するVCSELレーザであって、前記光が波長を有し、少なくとも部分的に前記筐体に受容されているVCSELレーザと、
前記筐体の第1端において基板に搭載された検出器と、
前記レーザと前記検出器との間に配置されたフィルタであって、前記フィルタは波長フィルタであるフィルタと、
前記筐体の第2端にある少なくとも1つの光学レンズと、
を含み、
前記光の第1部分は、前記少なくとも1つの光学レンズを介して標的上に導かれ、前記光の第2部分は、前記フィルタを介して前記検出器上に導かれ、前記フィルタが、前記光の前記第2部分における信号の振幅を強調させる、パッケージ化センサ・デバイス。 - 請求項9記載のパッケージ化センサ・デバイスにおいて、前記フィルタがエタロンである、パッケージ化センサ・デバイス。
- 請求項9記載のパッケージ化センサ・デバイスにおいて、前記検出器が、光検出器、PINフォトダイオード、共振キャビティ光検出器、またはアバランシェ・フォトダイオードから成る一群から選択される、パッケージ化センサ・デバイス。
- 請求項9記載のパッケージ化センサ・デバイスにおいて、前記フィルタが、前記VCSELレーザの少なくとも1つのミラーと前記VCSELレーザの前記基板とを含むエタロンである、パッケージ化センサ・デバイス。
- 請求項9記載のパッケージ化センサ・デバイスにおいて、前記フィルタが平行な2つの面を有し、各面が、前記波長において高反射性であるミラーを有する、パッケージ化センサ・デバイス。
- 請求項9記載のパッケージ化センサ・デバイスにおいて、前記筐体が、前記レーザおよび前記フィルタの無調芯実装および組み立てのための少なくとも1つの機構を有する、パッケージ化センサ・デバイス。
- 請求項9記載のパッケージ化センサ・デバイスにおいて、前記少なくとも1つの光学レンズが、前記光を平行化するために、前記レーザの底面発光面と前記フィルタとの間に配置される、パッケージ化センサ・デバイス。
- 請求項9記載のパッケージ化センサ・デバイスにおいて、前記VCSELレーザの前記基板が、自発発光抑制のために、少なくとも一方側に、アパーチャのパターンを有する、パッケージ化センサ・デバイス。
- レーザ発光用センサ・デバイスであって、
少なくとも1つのアパーチャから光を放射する少なくとも1つのレーザであって、キャビティと少なくとも1つのミラーとを含む、レーザと、
検出器と、
前記キャビティに対して固定位置にあるフィルタであって、前記フィルタは波長フィルタであり、前記検出器に導かれる光における信号の振幅を強調させるフィルタと、
前記レーザによって放射された光の第1部分を標的面上にほぼ合焦し、前記標的面から反射した任意の光の一部を戻して前記レーザ・キャビティに結合する第1光学レンズと、
前記第1光学レンズと前記レーザとの間にあるビーム・スプリッタであって、前記ビーム・スプリッタが、前記光の第2部分を前記ミラーから前記検出器上へ向け直すビーム・スプリッタと、
を含み、
第1光路は、前記光の前記第1部分を前記レーザと前記標的面上との間で搬送し、第2光路は、発光された前記光の前記第2部分を前記ビーム・スプリッタと前記検出器との間で搬送する、センサ・デバイス。 - 請求項17記載のセンサ・デバイスにおいて、さらに、前記ビーム・スプリッタと前記検出器との間に第2光学レンズを備え、前記第2光学レンズは、前記ビーム・スプリッタからの光を略平行化して前記検出器上に導く、センサ・デバイス。
- 請求項17記載のセンサ・デバイスにおいて、前記標的面は、前記第1光路内のみに配置されている、センサ・デバイス。
- 請求項17記載のセンサ・デバイスにおいて、前記フィルタは、前記第2光路内のみに配置されている、センサ・デバイス。
- 請求項20記載のセンサ・デバイスにおいて、前記ビーム・スプリッタが、前記レーザの光軸に対してある角度に位置付けられる、センサ・デバイス。
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