JP2016111237A - 量子カスケードレーザ装置 - Google Patents
量子カスケードレーザ装置 Download PDFInfo
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
- H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3418—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers using transitions from higher quantum levels
- H01S5/3419—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers using transitions from higher quantum levels intersubband lasers, e.g. laser transitions within the conduction or valence bands in non unipolar structures
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- H01S5/02—Structural details or components not essential to laser action
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- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (9)
- レーザ光を外部に出射させる出射窓を有する中空の筐体を備え、
前記筐体の内部には、
ヒートシンクと、
前記ヒートシンクに固定されたサブマウントと、
前記サブマウントに固定された量子カスケードレーザ素子と、
前記量子カスケードレーザ素子の一方の出射端面と前記出射窓との間に位置するように前記サブマウントに対向して配置され、前記量子カスケードレーザ素子の前記一方の出射端面及び他方の出射端面から出射するレーザ光に対する光吸収性を有するカバー部材と、が設けられ、
前記量子カスケードレーザ素子の前記一方の出射端面と、前記サブマウントにおける前記カバー部材との対向面とが面一となっており、
前記カバー部材は、前記一方の出射端面と対向する位置に前記レーザ光を前記出射窓に向けて通過させる開口部を有し、
前記開口部は、前記一方の出射端面側から前記出射窓側に向かって大径となるテーパ状の第1の開口部分と、前記第1の開口部分の前記一方の出射端面側において前記第1の開口部分の最小径以上となる一定の径で形成された第2の開口部分と、を有している量子カスケードレーザ装置。 - 前記カバー部材は、前記サブマウントにおける前記カバー部材との対向面に接し、
前記量子カスケードレーザ素子の前記一方の出射端面は、前記カバー部材における前記第2の開口部分の開口端に位置している請求項1記載の量子カスケードレーザ装置。 - 前記開口部は、前記第1の開口部分の前記出射窓側においてレンズを位置決めする第3の開口部分を更に有している請求項1又は2記載の量子カスケードレーザ装置。
- 前記カバー部材は、前記サブマウントにおける前記量子カスケードレーザ素子の固定面に沿って、前記量子カスケードレーザ素子の前記他方の出射端面よりも前記ヒートシンク側に延在する延在部分を有している請求項1〜3のいずれか一項記載の量子カスケードレーザ装置。
- 前記ヒートシンクは、前記量子カスケードレーザ素子の前記他方の出射端面に対して傾斜した状態で対向する対向面を有している請求項1〜4のいずれか一項記載の量子カスケードレーザ装置。
- 前記筐体は、有底の本体部と、前記出射窓が設けられた蓋部と、によって構成され、
前記蓋部の内側面に黒色加工が施されている請求項1〜5のいずれか一項記載の量子カスケードレーザ装置。 - 前記筐体の内側面の全体に黒色加工が施されている請求項1〜6のいずれか一項記載の量子カスケードレーザ装置。
- 前記筐体内には、乾燥窒素が充填されている請求項1〜7のいずれか一項記載の量子カスケードレーザ装置。
- 前記量子カスケードレーザ素子は、CW駆動分布帰還型レーザ素子である請求項1〜8のいずれか一項記載の量子カスケードレーザ装置。
Priority Applications (3)
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JP2014248329A JP6417199B2 (ja) | 2014-12-08 | 2014-12-08 | 量子カスケードレーザ装置 |
US14/923,861 US10333279B2 (en) | 2014-12-08 | 2015-10-27 | Quantum cascade laser device |
DE102015221534.2A DE102015221534A1 (de) | 2014-12-08 | 2015-11-03 | Quantenkaskadenlaservorrichtung |
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JP2014248329A JP6417199B2 (ja) | 2014-12-08 | 2014-12-08 | 量子カスケードレーザ装置 |
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JP2016111237A true JP2016111237A (ja) | 2016-06-20 |
JP6417199B2 JP6417199B2 (ja) | 2018-10-31 |
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JP (1) | JP6417199B2 (ja) |
DE (1) | DE102015221534A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018170454A (ja) * | 2017-03-30 | 2018-11-01 | 住友電気工業株式会社 | 光半導体装置 |
CN110350396A (zh) * | 2018-04-03 | 2019-10-18 | 住友电气工业株式会社 | 量子级联激光器 |
WO2021187421A1 (ja) * | 2020-03-18 | 2021-09-23 | 浜松ホトニクス株式会社 | 量子カスケードレーザ装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115332936A (zh) * | 2022-09-15 | 2022-11-11 | 广东感芯激光科技有限公司 | 应用于宽环境温度范围的qcl激光器封装结构及其封装方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01151285A (ja) * | 1987-12-08 | 1989-06-14 | Nec Corp | 半導体レーザ |
JP2003163396A (ja) * | 2001-11-27 | 2003-06-06 | Sumitomo Electric Ind Ltd | 光増幅器 |
JP2008177366A (ja) * | 2007-01-18 | 2008-07-31 | Hamamatsu Photonics Kk | 量子カスケードレーザ |
WO2014048832A1 (de) * | 2012-09-27 | 2014-04-03 | Osram Opto Semiconductors Gmbh | Optoelektronische vorrichtung |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5509025A (en) | 1994-04-04 | 1996-04-16 | At&T Corp. | Unipolar semiconductor laser |
US5727010A (en) | 1996-03-20 | 1998-03-10 | Lucent Technologies Inc. | Article comprising an improved quantum cascade laser |
US6759687B1 (en) * | 2000-10-13 | 2004-07-06 | Agilent Technologies, Inc. | Aligning an optical device system with an optical lens system |
US6511762B1 (en) * | 2000-11-06 | 2003-01-28 | General Electric Company | Multi-layer thermal barrier coating with transpiration cooling |
JP3715246B2 (ja) * | 2001-07-13 | 2005-11-09 | 住友重機械工業株式会社 | 射出成形機の可動金型支持装置 |
US6868104B2 (en) * | 2001-09-06 | 2005-03-15 | Finisar Corporation | Compact laser package with integrated temperature control |
US6870667B2 (en) * | 2001-11-27 | 2005-03-22 | Sumitomo Electric Industries, Ltd. | Optical amplifier |
US6836499B2 (en) * | 2002-05-24 | 2004-12-28 | Lucent Technologies Inc. | Optical amplifier for quantum cascade laser |
US7275754B2 (en) * | 2003-07-14 | 2007-10-02 | Scharmueller Josef | Support structure for a hitch ball |
US7088750B2 (en) * | 2003-12-05 | 2006-08-08 | Quartan Inc. | Adjustable laser module |
US7680807B2 (en) * | 2004-07-30 | 2010-03-16 | I-CES (Innovative Compression Engineering Solutions) | Method for reducing size of a digital audio, image or video file |
US7492806B2 (en) * | 2005-06-15 | 2009-02-17 | Daylight Solutions, Inc. | Compact mid-IR laser |
WO2007099612A1 (ja) * | 2006-02-28 | 2007-09-07 | Fujikura Ltd. | 一芯双方向光モジュール |
JP2008060396A (ja) | 2006-08-31 | 2008-03-13 | Hamamatsu Photonics Kk | 量子カスケードレーザ |
-
2014
- 2014-12-08 JP JP2014248329A patent/JP6417199B2/ja active Active
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2015
- 2015-10-27 US US14/923,861 patent/US10333279B2/en active Active
- 2015-11-03 DE DE102015221534.2A patent/DE102015221534A1/de active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01151285A (ja) * | 1987-12-08 | 1989-06-14 | Nec Corp | 半導体レーザ |
JP2003163396A (ja) * | 2001-11-27 | 2003-06-06 | Sumitomo Electric Ind Ltd | 光増幅器 |
JP2008177366A (ja) * | 2007-01-18 | 2008-07-31 | Hamamatsu Photonics Kk | 量子カスケードレーザ |
WO2014048832A1 (de) * | 2012-09-27 | 2014-04-03 | Osram Opto Semiconductors Gmbh | Optoelektronische vorrichtung |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018170454A (ja) * | 2017-03-30 | 2018-11-01 | 住友電気工業株式会社 | 光半導体装置 |
CN110350396A (zh) * | 2018-04-03 | 2019-10-18 | 住友电气工业株式会社 | 量子级联激光器 |
JP2019186278A (ja) * | 2018-04-03 | 2019-10-24 | 住友電気工業株式会社 | 量子カスケードレーザ |
WO2021187421A1 (ja) * | 2020-03-18 | 2021-09-23 | 浜松ホトニクス株式会社 | 量子カスケードレーザ装置 |
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JP6417199B2 (ja) | 2018-10-31 |
DE102015221534A1 (de) | 2016-06-09 |
US20180254610A1 (en) | 2018-09-06 |
US10333279B2 (en) | 2019-06-25 |
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